Patents by Inventor Kun Zhang

Kun Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230376734
    Abstract: Systems and methods for providing a neural network system for time series forecasting are described. A time series dataset that includes datapoints at a plurality of timestamps in an observed space is received. A first state-space model of a dynamical system underlying the time series dataset is provided. The first state-space model includes a non-parametric latent transition model. One or more latent variables of a latent space for the time series dataset are determined using the neural network system based on the first state-space model. A first prediction result for the time series dataset is provided by the neural network system based on the estimated latent variables.
    Type: Application
    Filed: September 16, 2022
    Publication date: November 23, 2023
    Inventors: Chenghao Liu, Chu Hong Hoi, Kun Zhang
  • Publication number: 20230367537
    Abstract: A screen projection display method and apparatus, a mobile terminal, a storage medium, and a program product. The method comprises: when the interface content of a first application program is displayed on a screen projection display device, receiving a first instruction (201); in response to the first instruction, displaying an application selection interface, the application selection interface comprising an option of at least one second application program (202); receiving a second instruction for a target second application program among the at least one second application (203); and in response to the second instruction, projecting the interface content of the target second application program to the screen projection display device for display (204).
    Type: Application
    Filed: July 26, 2023
    Publication date: November 16, 2023
    Applicant: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.
    Inventor: Kun ZHANG
  • Publication number: 20230363138
    Abstract: Embodiments of three-dimensional memory devices are disclosed. A disclosed memory structure comprises a memory cell comprising: a cylindrical body having a cylindrical shape, an insulating layer surrounding the cylindrical body, a word line contact coupled to a word line and surrounding a first portion of the insulating layer, and multiple plate line contact segments coupled to multiple plate lines respectively and surrounding a second portion of the insulating layer. The memory structure further comprises a bit line contact coupled to a bit line and coupled to a first end of the cylindrical body, a source line contact coupled to a source line, and a source cap coupled between the source line contact and a second end of the cylindrical body to increase a distance between the source line contact and the plate line contact segments.
    Type: Application
    Filed: May 6, 2022
    Publication date: November 9, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Yuancheng YANG, Dongxue ZHAO, Tao YANG, Lei LIU, Di WANG, Kun ZHANG, Wenxi ZHOU, Zhiliang XIA, Zongliang HUO
  • Publication number: 20230361031
    Abstract: Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a dielectric stack on the bottom conductive layer, the dielectric stack comprising a plurality of alternatively arranged first dielectric layers and second dielectric layers; forming an opening penetrating the dielectric stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and replacing the plurality of second dielectric layers with conductive layers.
    Type: Application
    Filed: May 6, 2022
    Publication date: November 9, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Lei LIU, Yuancheng Yang, Wenxi Zhou, Kun Zhang, Di Wang, Tao Yang, Dongxue Zhao, Zhiliang Xia, Zongliang Huo
  • Publication number: 20230361030
    Abstract: Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a memory stack on the bottom conductive layer, the memory stack comprising a plurality of alternatively arranged dielectric layers and conductive layers; forming an opening penetrating the memory stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and forming a plurality of interconnection structures to electrically connect the bottom conductive layer, the plurality of conductive layers of the memory stack, and the top contact.
    Type: Application
    Filed: May 6, 2022
    Publication date: November 9, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Yuancheng Yang, Dongxue Zhao, Tao Yang, Lei Liu, Di Wang, Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Patent number: 11807578
    Abstract: A permeable pavement system including a permeable pavement composition and a related method are provided. The permeable pavement system includes a first layer of a permeable pavement composition including a quantity of a first permeable pavement material and a quantity of cured carbon fiber composite material (CCFCM) incorporated therewith, the first layer defining a first surface; and a second layer of a second permeable pavement material deposited over a substantial entirety of and covering the first surface of the first layer of the permeable pavement composition, wherein the first layer interfaces with the second layer to at least strengthen the permeable pavement system.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: November 7, 2023
    Assignees: The Boeing Company, Washington State University
    Inventors: Deborah Ann Taege, Somayeh Nassiri, Karl Richard Englund, Kun Zhang, Justin Yune-Te Lim
  • Publication number: 20230354579
    Abstract: A three-dimensional (3D) memory device includes a memory cell, a top contact coupled to the memory cell, and a bottom contact coupled to the memory cell. The memory cell can include a pillar, an insulating layer surrounding the pillar, a first gate contact coupled to a word line, a second gate contact coupled to a plate line, and an annular dielectric layer within a portion of the pillar. The annular dielectric layer can increase a retention time of electrical charge in the pillar. The 3D memory device can utilize dynamic flash memory (DFM), increase retention times, decrease refresh rates, increase a floating body effect, decrease manufacturing defects, decrease leakage current, decrease junction current, decrease power consumption, increase an upper limit of charge density in the pillar, dynamically adjust a length of the plate line, and decrease parasitic resistance.
    Type: Application
    Filed: April 28, 2022
    Publication date: November 2, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Yuancheng YANG, Dongxue Zhao, Tao Yang, Lei Liu, Di Wang, Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Publication number: 20230354578
    Abstract: A three-dimensional (3D) memory device includes a memory cell, a top contact coupled to the memory cell, and a bottom contact coupled to the memory cell. The memory cell can include a pillar, an insulating layer surrounding the pillar, a first gate contact surrounding a first portion of the insulating layer, and a second gate contact surrounding a second portion of the insulating layer. The pillar can be configured to store an electrical charge. The pillar can be a monocrystalline material. The 3D memory device can utilize dynamic flash memory (DFM), decrease defects, increase manufacturing efficiency, decrease leakage current, decrease junction current, decrease power consumption, increase storage density, increase charge retention times, and decrease refresh rates.
    Type: Application
    Filed: April 28, 2022
    Publication date: November 2, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Di WANG, Lei LIU, Yuancheng YANG, Wenxi ZHOU, Kun ZHANG, Tao YANG, Dongxue ZHAO, Zhiliang XIA, Zongliang HUO
  • Publication number: 20230354599
    Abstract: A three-dimensional (3D) memory device includes a first memory cell, a second memory cell, a control gate between the first and second memory cells, a top contact coupled to the first memory cell, and a bottom contact coupled to the second memory cell. The first memory cell can include a first pillar, a first insulating layer surrounding the first pillar, a first gate contact coupled to a first word line, and a second gate contact coupled to a first plate line. The second memory cell can include a second pillar, a second insulating layer surrounding the second pillar, a third gate contact coupled to a second word line, and a fourth gate contact coupled to a second plate line. The 3D memory device can utilize dynamic flash memory (DFM), increase storage density, provide multi-cell storage, provide a three-state logic, decrease leakage current, increase retention time, and decrease refresh rates.
    Type: Application
    Filed: April 28, 2022
    Publication date: November 2, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Tao Yang, Dongxue ZHAO, Yuancheng YANG, Lei LIU, Kun ZHANG, Di WANG, Wenxi ZHOU, Zhiliang XIA, Zongliang HUO
  • Publication number: 20230354577
    Abstract: A three-dimensional (3D) memory device includes a memory cell, a top contact coupled to the memory cell, and a bottom contact coupled to the memory cell. The memory cell can include a pillar, an insulating layer surrounding the pillar, a first gate contact coupled to a word line, a second gate contact coupled to a plate line, and a third gate contact configured to control electrical charge conduction between the first gate contact and the second gate contact. The 3D memory device can utilize dynamic flash memory (DFM), increase storage efficiency, provide tri-gate control, provide different programming options, increase read, program, and erase operation rates, decrease leakage current, increase retention time, and decrease refresh rates.
    Type: Application
    Filed: April 28, 2022
    Publication date: November 2, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Dongxue ZHAO, Tao Yang, Yuancheng Yang, Lei Liu, Di Wang, Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Publication number: 20230334306
    Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for predicting future patient health using a recurrent neural network. In particular, at each time step, a network input for the time step is processed using a recurrent neural network to update a hidden state of the recurrent neural network. Specifically, the hidden state of the recurrent neural network is partitioned into a plurality of partitions and the plurality of partitions comprises a respective partition for each of a plurality of possible observational features.
    Type: Application
    Filed: February 18, 2020
    Publication date: October 19, 2023
    Inventors: Kun Zhang, Andrew M. Dai, Yuan Xue, Alvin Rishi Rajkomar, Gerardo Flores
  • Publication number: 20230331200
    Abstract: Described are devices, systems and methods for managing a supplemental brake control system in autonomous vehicles. In some aspects, a supplemental brake management system includes brake control hardware and software that operates with a sensing mechanism for determining the brake operational status and a control mechanism for activating the supplemental brake control in an autonomous vehicle, which can be implemented in addition to the vehicle's primary brake control system.
    Type: Application
    Filed: June 23, 2023
    Publication date: October 19, 2023
    Inventors: Xiaoling HAN, Kun ZHANG, Yu-Ju HSU, Frederic ROCHA, Zehua HUANG, Charles A. PRICE
  • Patent number: 11786365
    Abstract: A prosthetic tissue valve and a method of treating the prosthetic tissue valve are provided. The method includes: decreasing a temperature of a chamber carrying the prosthetic tissue valve from a first preset temperature to a second preset temperature in a first cooling rate; decreasing the temperature of the chamber carrying the prosthetic tissue valve from the second preset temperature to a third preset temperature in a second cooling rate; and performing a drying process to the prosthetic tissue valve. The second preset temperature is a critical crystallization temperature and is greater than a crystallization temperature of the prosthetic tissue valve. The third preset temperature is lower than the crystallization temperature of the prosthetic tissue valve, and the second cooling rate is greater than the first cooling rate.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: October 17, 2023
    Assignee: PEIJIA MEDICAL (SUZHOU) CO., LTD.
    Inventors: Kongrong Karl Pan, Yi Zhang, Kun Zhang, Yongjian Wu, Mao Chen, Yida Tang
  • Publication number: 20230325276
    Abstract: Example error correction methods and apparatus are described. In one example method, a register controller detects an error existing in a memory, and after detecting an uncorrected error (UCE), obtains a memory address in which the UCE occurs. The register controller reads raw data from a location indicated by the memory address, stores preset first data in the location indicated by the memory address, and reads second data from the location after storing the first data in the location. The register controller compares the first data with the second data to determine a first failure location in the location, determines raw data stored in the first failure location from the raw data in the location, and performs error correction on the raw data stored in the first failure location.
    Type: Application
    Filed: June 1, 2023
    Publication date: October 12, 2023
    Inventors: Yuwei LI, Xu ZHANG, Wei LI, Kun ZHANG, Wen YIN
  • Patent number: 11780536
    Abstract: Disclosed is a marine communication buoy. The marine communication buoy includes s a round seat, side slots and hollow boxes, four side slots are uniformly distributed outside the round seat, and each side slot is connected with the hollow box in a sliding way. The marine communication buoy also includes sealing rings and buckle covers, an outer part of each hollow box is provided with a sealing ring, an outer end of each hollow box is slidably connected with the buckle cover, and an inner side of the buckle cover is in contact with the sealing ring. The marine communication buoy also includes valves and connector pipes, the connector pipe is arranged at an outer side of each buckle cover, and the connector pipe is provided with the valve.
    Type: Grant
    Filed: August 16, 2022
    Date of Patent: October 10, 2023
    Assignees: HAINAN NORMAL UNIVERSITY, CETC GUOHAIXINTONG TECHNOLOGY (HAINAN) CO., LTD
    Inventors: Kun Zhang, Shengrong Zhang, Yu Zhou, Chaoyang Wang, Haixia Long, Haizhuang Hong, Yupeng Zhu
  • Publication number: 20230297642
    Abstract: The invention discloses a bearings-only target tracking method based on pseudo-linear maximum correlation entropy Kalman filtering, which introduces the correlation entropy function into pseudo-linear Kalman filtering to solve the problem of non-Gaussian noise. A bearings-only target tracking algorithm based on pseudo-linear maximum correlation entropy Kalman filtering is also proposed. The invention combines the maximum correlation entropy theory with pseudo-linear Kalman filtering, and the target tracking accuracy is higher and divergence can be avoided when working in a non-Gaussian environment.
    Type: Application
    Filed: December 26, 2022
    Publication date: September 21, 2023
    Inventors: BEI PENG, SHAN ZHONG, GANG WANG, HONGYU ZHANG, LINQIANG OUYANG, XINYUE YANG, XUDONG WEI, KUN ZHANG
  • Publication number: 20230282576
    Abstract: Embodiments of three-dimensional memory devices are disclosed. A disclosed memory structure can comprises a memory cell, a bit line contact coupled to the memory cell, a bit line coupled to the bit line contact, a source line contact coupled to the memory cell, and a source line coupled to the source line contact. The memory cell comprises a cylindrical body having a cylindrical shape, an insulating layer surrounding the cylindrical body, a word line contact surrounding a first portion of the insulating layer, the word line contact coupled to a word line, and a plurality of plate line contact segments surrounding a second portion of the insulating layer, the plurality of plate line contact segments coupled to a common plate line.
    Type: Application
    Filed: May 4, 2022
    Publication date: September 7, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Yuancheng Yang, DongXue Zhao, Tao Yang, Lei Liu, Di Wang, Kun Zhang, Wenxi Zhou, ZhiLiang Xia, ZongLiang Huo
  • Publication number: 20230282280
    Abstract: A method for forming a 3D memory device is provided. The method comprises forming an array wafer including a core array region, a staircase region, and a periphery region. Forming the array wafer includes forming an alternating dielectric stack on a first substrate, forming a plurality of channel structures in the alternating dielectric stack in the core array region, each channel structure including a functional layer and a channel layer, forming a staircase structure in the staircase region, and forming a plurality of dummy channel structures. The method further comprises bonding a CMOS wafer to the array wafer; and removing the first substrate; removing a portion of functional layer of each channel structure to expose channel layer, and doping the exposed portion of the channel layer.
    Type: Application
    Filed: May 4, 2022
    Publication date: September 7, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventor: Kun ZHANG
  • Patent number: D999193
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: September 19, 2023
    Assignee: ONEPLUS TECHNOLOGY (SHENZHEN) CO., LTD.
    Inventors: Haoran Liu, Yizhong Fan, Kun Zhang
  • Patent number: D1005806
    Type: Grant
    Filed: August 27, 2023
    Date of Patent: November 28, 2023
    Inventor: Kun Zhang