Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a conductive gate stack formed over a substrate. A first gate spacer is formed adjacent to a sidewall of the conductive gate stack. A source/drain contact structure is formed adjacent to the first gate spacer. An insulating capping layer covers and is in direct contact with an upper surface of the conductive gate stack. A top width of the insulating capping layer is substantially equal to a top width of the conductive gate stack. The insulating capping layer is separated from the source/drain contact structure by the first gate spacer.

Abstract: FinFET devices with source/drain contacts with reduced resistance/capacitance power loss and with an enhanced processing window between the source/drain contacts and a gate via and methods of manufacture are described herein. A metal riser may be formed in a first recess of a source/drain contact of a first material. The metal riser and a contact via may be formed from a second material and the contact via may be formed over the metal riser to provide a hybrid source/drain contact of a finFET with a wide surface contact area at an interface between the source/drain contact and the metal riser. A dielectric fill material and/or a conformal contact etch stop layer may be used to form an isolation region in a second recess of the source/drain contact to extend a processing window disposed between the isolation region and a gate contact of the finFET.

Abstract: A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

Abstract: An image processing circuit stores a training database and models in memory. The image processing circuit includes an attribute identification engine to identify an attribute from an input image according to a model stored in the memory. By enhancing the input image based on the identified attribute, a picture quality (PQ) engine in the image processing circuit generates an output image for display. The image processing circuit further includes a data collection module to generate a labeled image based on the input image labeled with the identified attribute, and to add the labeled image to the training database. A training engine in the image processing circuit then re-trains the model using the training database.

Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.

Abstract: A source/drain region is disposed in a substrate. A gate structure is disposed over the substrate. A gate spacer is disposed on a sidewall of the gate structure. The gate spacer and the gate structure have substantially similar heights. A via is disposed over and electrically coupled to: the source/drain region or the gate structure. A mask layer is disposed over the gate spacer. The mask layer has a greater dielectric constant than the gate spacer. A first side of the mask layer is disposed adjacent to the via. A dielectric layer is disposed on a second side of the mask layer, wherein the mask layer is disposed between the dielectric layer and the via.

Abstract: A semiconductor package structure includes a first package, a second package over the first package, a plurality of connectors between the first package and the second package and a plurality of baffle structures between the first package and the second package. The second package includes a bonding region and a periphery region surrounding the bonding region. The connectors are disposed in the bonding region to provide electrical connections between the first package and the second package. The baffle structures are disposed in the periphery region and are separated from each other.

Abstract: A method of forming a semiconductor structure includes bonding a first die and a second die to a first side of a first interposer and to a first side of a second interposer, respectively, where the first interposer is laterally adjacent to the second interposer; encapsulating the first interposer and the second interposer with a first molding material; forming a first recess in a second side of the first interposer opposing the first side of the first interposer; forming a second recess in a second side of the second interposer opposing the first side of the second interposer; and filling the first recess and the second recess with a first dielectric material.

Abstract: In an embodiment, a method for fabricating a FinFET device includes providing a semiconductor substrate, etching the semiconductor substrate to form dummy fins and active fins. The group of dummy fins is etched through a patterned mask layer. An isolation feature is formed on the semiconductor substrate after etching the first group of dummy fins.

Abstract: A downhole-type tool includes a casing joint, a housing affixed to the casing joint, and an electric stator encased in the housing. The housing defines an inner bore and has an inner bore wall that is continuous with an inner wall of the casing joint. The housing is sealed against ingress of cement to the stator. The electric stator is configured to drive an electric rotor-impeller. A flow of cement can be received with an outer surface of the housing. The flow of cement can be directed into an annulus between the housing and a wall of a wellbore. The casing joint can be cemented in the wellbore.

Abstract: An image processing circuit performs super-resolution (SR) operations. The image processing circuit includes memory to store multiple parameter sets of multiple artificial intelligent (AI) models. The image processing circuit further includes an image guidance module, a parameter decision module, and an SR engine. The image guidance module operates to detect a representative feature in an image sequence including a current frame and past frames within a time window. The parameter decision module operates to adjust parameters of one or more AI models based on a measurement of the representative feature. The SR engine operates to process the current frame using the one or more AI models with the adjusted parameters to thereby generate a high-resolution image for display.

Abstract: The invention introduces a method for preventing computer attacks in two-phase filtering, performed by a processing unit of an apparatus, which contains at least the following steps: receiving service requests from a client system, wherein each service request requests for executing a service in a protected computer-asset in a network; performing a phase one filtering including a white-list judgment, a black-list judgment, and a custom-rule judgment on each service request; and performing a phase two filtering including a base-rule judgement on each service request that has undergone the phase one filtering completely, hasn't been forwarded to the protected computer-asset in the phase one filtering, and hasn't been undergone the attack prevention operation in the phase one filtering. Each custom-rule pattern defines a specific attack to an individual system or vulnerability. Each base-rule pattern defines a common attack.

Abstract: A video processing circuit includes an input buffer, an online adaptation circuit, and an artificial intelligence (AI) super-resolution (SR) circuit. The input buffer receives input low-resolution (LR) frames and high-resolution (HR) frames from a video source over a network. The online adaptation circuit forms training pairs, and calculates an update to representative features that characterize the input LR frames using the training pairs. Each training pair formed by one of the input LR frames and one of the HR frames. The AI SR circuit receives the input LR frames from the input buffer and the representative features from the online adaptation circuit. Concurrently with calculating the update to the representative features, the AI SR circuit generates SR frames for display from the input LR frames based on the representative features. Each SR frame has a higher resolution than a corresponding one of the input LR frames.

Abstract: An image processing apparatus includes a super-resolution (SR) circuit and a resizer circuit. The SR circuit performs an SR operation upon a first image to generate a second image, wherein a resolution of the second image is not lower than a resolution of the first image, and the SR operation is based, at least in part, on one or more artificial intelligence (AI) models. The resizer circuit performs a resize operation upon the second image to generate a third image, wherein a resolution of the third image is not lower than the resolution of the second image, and no AI model is involved in the resize operation.

Abstract: A miniature optical lens assembly, which has at least one of optical element, includes the optical element. The optical element includes a low reflection layer disposed on at least one surface of the optical element. The low reflection layer includes a plurality of nanocrystalline grains, and the nanocrystalline grains are located on one surface of the low reflection layer. The optical element is at least one of a light blocking element, an annular spacer element and a barrel element.

Abstract: An exemplary semiconductor device includes a source feature and a drain feature disposed over a substrate. The semiconductor device further includes a source via electrically coupled to the source feature, and a drain via electrically coupled to the drain feature. The source via has a first size; the drain via has a second size; and the first size is greater than the second size. The semiconductor device may further include a first metal line electrically coupled to the source via and a second metal line electrically coupled to the drain via. The source via has a first dimension matching a dimension of the first metal line, and the drain via has a second dimension matching a dimension of the second metal line. The first metal line may be wider than the second metal line.

Abstract: A convolutional neural-network calculating apparatus including a bidirectional-output operation module and a data scheduler is provided. The bidirectional-output operation module includes a number of bidirectional-output operators, a number of row-output accumulators, and a number of column-output accumulators. Each bidirectional-output operator has a row-output port and a column-output port. The row-output accumulators are coupled to the row-output ports, and the column-output accumulators are coupled to the corresponding column-output ports. The data scheduler is configured to provide a number of values of an input data and a number of convolution values of the convolution kernels to the bidirectional-output operators. In a first operation mode, the bidirectional-output operators output operation results to the corresponding column-output accumulators through the column-output ports.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an insulating layer over a substrate, a gate stack formed in the insulating layer, and an insulating capping layer formed in the insulating layer to cover the gate stack. The semiconductor device structure also includes a source/drain contact structure adjacent to the gate stack. The source/drain contact structure has a sidewall that is in direct contact with a sidewall of the insulating capping layer, and an upper surface that is substantially level with an upper surface of the insulating capping layer and an upper surface of the insulating layer. In addition, the semiconductor device structure includes a first via structure above and electrically connected to the gate stack and a second via structure above and electrically connected to the source/drain contact structure.

Abstract: A method includes attaching semiconductor devices to an interposer structure, attaching the interposer structure to a first carrier substrate, attaching integrated passive devices to the first carrier substrate, forming an encapsulant over the semiconductor devices and the integrated passive devices, debonding the first carrier substrate, attaching the encapsulant and the semiconductor devices to a second carrier substrate, forming a first redistribution structure on the encapsulant, the interposer structure, and the integrated passive devices, wherein the first redistribution structure contacts the interposer structure and the integrated passive devices, and forming external connectors on the first redistribution structure.

Abstract: FinFET devices with source/drain contacts with reduced resistance/capacitance power loss and with an enhanced processing window between the source/drain contacts and a gate via and methods of manufacture are described herein. A metal riser may be formed in a first recess of a source/drain contact of a first material. The metal riser and a contact via may be formed from a second material and the contact via may be formed over the metal riser to provide a hybrid source/drain contact of a finFET with a wide surface contact area at an interface between the source/drain contact and the metal riser. A dielectric fill material and/or a conformal contact etch stop layer may be used to form an isolation region in a second recess of the source/drain contact to extend a processing window disposed between the isolation region and a gate contact of the finFET.