Abstract: A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled to the through-via. A diffusion barrier is over the top surface of the metal pillar. A solder cap is disposed over the diffusion barrier.

Abstract: A bump structure that may be used for stacked die configurations is provided. Through-silicon vias are formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon vias. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon vias. The isolation film is thinned to re-expose the through-silicon vias. Bump pads and redistribution lines are formed on the backside of the semiconductor substrate providing an electrical connection to the through-silicon vias. Another isolation film is deposited and patterned, and a barrier layer is formed to provide contact pads for connecting to an external device, e.g., another die/wafer or circuit board.

Abstract: The embodiments described above provide mechanisms for forming metal bumps on metal pads with testing pads on a packaged integrated circuit (IC) chip. A passivation layer is formed to cover the testing pads and possibly portions of metal pads. The passivation layer does not cover surfaces away from the testing pad region and the metal pad region. The limited covering of the testing pads and the portions of the metal pads by the passivation layer reduces interface resistance for a UBM layer formed between the metal pads and the metal bumps. Such reduction of interface resistance leads to the reduction of resistance of the metal bumps.

Abstract: A bump structure that may be used for stacked die configurations is provided. Through-silicon vias are formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon vias. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon vias. The isolation film is thinned to re-expose the through-silicon vias. Bump pads and redistribution lines are formed on the backside of the semiconductor substrate providing an electrical connection to the through-silicon vias. Another isolation film is deposited and patterned, and a barrier layer is formed to provide contact pads for connecting to an external device, e.g., another die/wafer or circuit board.

Abstract: The embodiments described above provide mechanisms for forming metal bumps on metal pads with testing pads on a packaged integrated circuit (IC) chip. A passivation layer is formed to cover the testing pads and possibly portions of metal pads. The passivation layer does not cover surfaces away from the testing pad region and the metal pad region. The limited covering of the testing pads and the portions of the metal pads by the passivation layer reduces interface resistance for a UBM layer formed between the metal pads and the metal bumps. Such reduction of interface resistance leads to the reduction of resistance of the metal bumps.

Abstract: A frequency generator is used for generating a frequency within a frequency range. The frequency generator includes a variable current source, a voltage drop generation unit, a voltage source, a detection unit, a conversion unit, and an oscillating circuit. The variable current source is used for outputting a current according to a control signal. The voltage drop generation unit is used for generating a voltage drop according to the current. The voltage source is used for outputting a voltage range. The detection unit is used for outputting the control signal to the variable current source according to a relationship between the voltage drop and the voltage range. The conversion unit is used for outputting a digital code according to the relationship between the voltage drop and the voltage range. The oscillator circuit is used for generating the frequency according to the digital code.

Abstract: An integrated circuit structure includes a semiconductor substrate having a front side and a backside. A through-silicon via (TSV) penetrates the semiconductor substrate, wherein the TSV has a back end extending to the backside of the semiconductor substrate. A redistribution line (RDL) is formed over the backside of the semiconductor substrate and connected to the back end of the TSV. A passivation layer is over the RDL with an opening formed in the passivation layer, wherein a portion of a top surface of the RDL and a sidewall of the RDL are exposed through the opening. A metal finish is formed in the opening and contacting the portion of the top surface and the sidewall of the RDL.

Abstract: A driving method of a light-emitting diode (LED) adapted to a driving apparatus is provided. The driving method includes detecting whether the driving apparatus performs dimming, and if the driving apparatus performs dimming, determining whether a predetermined requirement for dimming control is met or not. When the predetermined requirement for dimming control is not met, respective current magnitudes of a plurality of driving currents are regulated, and each of the driving currents is output for a full time of a period. Conversely, when the predetermined requirement for dimming control is met, each of the driving currents is output for a partial time of a period.

Abstract: An LED device with simultaneous open and short detection function includes a plurality of LED strings, a voltage converter, a current driving unit, a loop control unit, an open detector, a short detector and a voltage detector. The open detector and the short detector are utilized for detecting LED open and LED short for the plurality of LED strings, respectively. The voltage detector is coupled to the open detector, the short detector and the voltage converter, and is utilized for generating a reset signal to the short detector according to an output voltage of the voltage converter when the LED open occurs on the plurality of LED strings, so as to initiate the LED short detection for the plurality of LED strings again.

Abstract: A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.

Abstract: A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled to the through-via. A diffusion barrier is over the top surface of the metal pillar. A solder cap is disposed over the diffusion barrier.

Abstract: A driving method of a light-emitting diode (LED) adapted to a driving apparatus is provided. The driving method includes detecting whether the driving apparatus performs dimming, and if the driving apparatus performs dimming, determining whether a predetermined requirement for dimming control is met or not. When the predetermined requirement for dimming control is not met, respective current magnitudes of a plurality of driving currents are regulated, and each of the driving currents is output for a full time of a period. Conversely, when the predetermined requirement for dimming control is met, each of the driving currents is output for a partial time of a period.

Abstract: A driving method of a light-emitting diode (LED) adapted to a driving apparatus is provided. The driving method includes receiving a dimming signal, detecting whether the driving apparatus performs dimming, and if the driving apparatus performs dimming, determining whether a duty cycle of the dimming signal is smaller than a predetermined value. When the duty cycle of the dimming signal is not smaller than the predetermined value, respective current magnitudes of a plurality of driving currents are regulated according to the dimming signal, and each of the driving currents is output for a full time of a period. Conversely, when the duty cycle of the dimming signal is smaller than the predetermined value, each of the driving currents is output for a partial time of a period. A driving apparatus employing the driving method is also provided.

Abstract: A driving method of a light-emitting diode (LED) adapted to a driving apparatus is provided. The driving method includes receiving a dimming signal, detecting whether the driving apparatus performs dimming, and if the driving apparatus performs dimming, determining whether a duty cycle of the dimming signal is smaller than a predetermined value. When the duty cycle of the dimming signal is not smaller than the predetermined value, respective current magnitudes of a plurality of driving currents are regulated according to the dimming signal, and each of the driving currents is output for a full time of a period. Conversely, when the duty cycle of the dimming signal is smaller than the predetermined value, each of the driving currents is output for a partial time of a period. A driving apparatus employing the driving method is also provided.

Abstract: A control method capable of preventing flicker effect for a light source module includes detecting variation situations of a driving current passing through the light source module to generate a current detection signal, adjusting a variable reference voltage according to the current detection signal, obtaining a feedback voltage from the light source module, generating a voltage control signal according to the feedback voltage and the variable reference voltage, and generating an output voltage according to the voltage control signal to drive the light source module.

Abstract: An integrated circuit structure includes a semiconductor wafer, which includes a first notch extending from an edge of the semiconductor wafer into the semiconductor wafer. A carrier wafer is mounted onto the semiconductor wafer. The carrier wafer has a second notch overlapping at least a portion of the first notch. A side of the carrier wafer facing the semiconductor wafer forms a sharp angle with an edge of the carrier wafer. The carrier wafer has a resistivity lower than about 1×108 Ohm-cm.

Abstract: A driving apparatus of a light emitting diode (LED) and a driving method thereof are provided. In the driving method, when the driving apparatus performs dimming and a duty cycle of a dimming signal is smaller than a predetermination value, outputting time of driving currents are equally allotted in a period, and a magnitude of each driving current is regulated correspondingly. When the driving apparatus performs dimming and the duty cycle of the dimming signal is equal to or greater than the predetermination value, the driving currents are simultaneously output in the period, and the magnitude of each driving current is regulated according to the dimming signal. Therefore, an audio noise and an electromagnetic interference caused by excessive variation of a sum of the driving currents are suppressed.

Abstract: A driving method of a multi-channel driving circuit includes: receiving multiple driving signals corresponding to multiple to-be-driven elements, providing multiple randomized time delays, respectively adjusting the driving signals according to the randomized time delays to generate multiple delayed driving signals, and respectively driving the corresponding to-be-driven elements according to the delayed driving signals.

Abstract: A light source driving device for driving a light emitting component is disclosed. The light source driving device includes a voltage converter coupled to the light emitting component for converting an input voltage into an output driving voltage according to a voltage control signal, a dimming unit coupled to the light emitting component for implementing a dimming process according to a dimming signal, a current source coupled to the dimming unit for providing a driving current to drive the light emitting component, and a control unit coupled to the dimming unit and the voltage converter for detecting a dimming state to generate a dimming detection signal and generating a reference voltage according to the dimming detection signal, wherein the control unit controls the voltage converter to generate the output driving voltage so as to driving the light emitting component.

Abstract: An integrated circuit structure includes a semiconductor wafer, which includes a first notch extending from an edge of the semiconductor wafer into the semiconductor wafer. A carrier wafer is mounted onto the semiconductor wafer. The carrier wafer has a second notch overlapping at least a portion of the first notch. A side of the carrier wafer facing the semiconductor wafer forms a sharp angle with an edge of the carrier wafer. The carrier wafer has a resistivity lower than about 1×108 Ohm-cm.