Patents by Inventor Kuo-In Chen

Kuo-In Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices
    Patent number: 10566332
    Abstract: A semiconductor memory device includes a semiconductor substrate having active areas and a trench isolation region between the active areas. The active areas extend along a first direction. Buried word lines extend along a second direction in the semiconductor substrate. Two of the buried word lines intersect with each of the active areas, separating each of the active areas into a digit line contact area and two cell contact areas. The second direction is not perpendicular to the first direction. A digit line contact is disposed on the digit line contact area. A storage node contact is disposed on each of the two cell contact areas. The digit line contact and the storage node contact are coplanar. At least one digit line extends along a third direction over a main surface of the semiconductor substrate. The at least one digit line is in direct contact with the digit line contact.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: February 18, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Kuo-Chen Wang, Shih-Fan Kuan, Lars Heineck, Sanh D. Tang
  • Capacitors, integrated assemblies including capacitors, and methods of forming integrated assemblies
    Patent number: 10566136
    Abstract: Some embodiments include a capacitor. The capacitor has a first electrode with a lower pillar portion, and with an upper container portion over the lower pillar portion. The lower pillar portion has an outer surface. The upper container portion has an inner surface and an outer surface. Dielectric material lines the inner and outer surfaces of the upper container portion, and lines the outer surface of the lower pillar portion. A second electrode extends along the inner and outer surfaces of the upper container portion, and along the outer surface of the lower pillar portion. The second electrode is spaced from the first electrode by the dielectric material. Some embodiments include assemblies (e.g., memory arrays) which have capacitors. Some embodiments include methods of forming capacitors.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: February 18, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Kuo-Chen Wang, Hiroshi Amaike, Kota Hattori
  • Object driving device and object driving method
    Patent number: 10558113
    Abstract: An object driving device includes an object, a driving unit, an image capturing unit and a processing unit. The driving unit is connected to the object. The processing unit is electrically connected to the driving unit and the image capturing unit. The processing unit controls the driving unit to drive the object to move and controls the image capturing unit to capture a plurality of initial images. The processing unit subtracts pixel data of every two adjacent initial images from each other to obtain at least one subtracted image. The processing unit determines a current image position of the object in each of the at least one subtracted image. The processing unit determines a current real position of the object according to the current image position. The processing unit controls the driving unit to drive the object to move from the current real position to a target position.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: February 11, 2020
    Assignee: Qisda Corporation
    Inventors: Jun-Hao Kuo, Cheng-Kuo Chen, Hsin-Tsung Feng, Wei-Chih Chen
  • System and method for substrate wafer back side and edge cross section seals
    Patent number: 10546750
    Abstract: Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: January 28, 2020
    Assignee: Vishay-Siliconix
    Inventors: Hamilton Lu, The-Tu Chau, Kyle Terrill, Deva N. Pattanayak, Sharon Shi, Kuo-In Chen, Robert Xu
  • Method Of Forming An Array Of Capacitors, A Method Of Forming DRAM Circuitry, And A Method Of Forming An Elevationally-Elongated Conductive Structure Of Integrated Circuitry
    Publication number: 20200020694
    Abstract: A method of forming elevationally-elongated conductive structures of integrated circuitry comprises providing a substrate comprising a plurality of spaced elevationally-extending conductive vias individually having an upper horizontal perimeter. The conductive vias individually have an upper horizontal perimeter. Masking material is formed directly above the conductive vias. An opening is formed in the masking material directly above individual of the upper horizontal perimeters of individual of the conductive vias. Individual of the masking-material openings comprise a lower horizontal perimeter that overlaps the upper horizontal perimeter of the conductive via directly there-below. Individual of the masking-material openings comprise a lower horizontal perimeter that overlaps the upper horizontal perimeter of the conductive via directly there-below.
    Type: Application
    Filed: September 23, 2019
    Publication date: January 16, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Kuo-Chen Wang, Sanh D. Tang
  • Method of evaluating the quality of images
    Patent number: 10529065
    Abstract: The present invention discloses a method of evaluating image quality taken in an actual scene, the method comprising: providing a test chart placed in an actual scene, said test chart comprising a plurality of positioning patterns and a plurality of quality test patterns; capturing an image of the test chart in the actual scene; searching the plurality of positioning patterns in the image of the test chart to locate the orientation of the image of the test chart; and identifying the plurality of quality test patterns in the located image of the test chart and evaluating the image quality of the plurality of quality test patterns.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: January 7, 2020
    Assignee: GORILLA TECHNOLOGY INC.
    Inventors: Sze-Yao Ni, Yuang-Tzong Lan, Kuo-Chen Wu
  • Elevationally-Elongated Conductive Structure Of Integrated Circuitry, Method Of Forming An Array Of Capacitors, Method Of Forming DRAM Circuitry, And Method Of Forming An Elevationally-Elongated Conductive Structure Of Integrated Circuitry
    Publication number: 20200006472
    Abstract: A method of forming elevationally-elongated conductive structures of integrated circuitry comprises providing a substrate comprising a plurality of spaced elevationally-extending conductive vias. Conductive material is formed directly above and directly against the conductive vias. The conductive material has an upper surface and a first sidewall that are directly above individual of the conductive vias in a vertical cross-section. The conductive material has a second sidewall that is not directly above the individual conductive vias. Covering material is formed directly above individual of the upper surfaces and against individual of the first sidewalls directly above the individual conductive vias. The covering material comprises a composition different from that of at least some of the conductive material.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 2, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Sanh D. Tang, Kuo-Chen Wang
  • Ultra-thin broadband retardation film
    Patent number: 10520654
    Abstract: An ultra-thin broadband retardation film is provided. The broadband retardation film includes a first retardation film and a second retardation film. The second retardation film is disposed on a side of the first retardation film, wherein an in-plane retardation value Ro of the first retardation film is between 70 nm and 130 nm, an in-plane retardation value Ro of the second retardation film is between 140 nm and 260 nm, and an angle between an optic axis of the first retardation film and an optic axis of the second retardation film is between 35° and 70°.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: December 31, 2019
    Assignee: imat corporation
    Inventors: Tsai-An Yu, Da-Ren Chiou, Shih-Ming Hung, Peng-Shun Tsai, Yi-Ting Chiu, Kuo-Chen Wu, Yi-Chien Chen
  • SURGICAL NAVIGATION METHOD AND SYSTEM USING AUGMENTED REALITY
    Publication number: 20190388177
    Abstract: In a proposed surgical navigation method for a surgical operation to be performed on an operation target, a mobile device stores 3D imaging information that relates to the operation target before the surgical operation. Then, an optical positioning system is used to acquire spatial coordinate information relating to the mobile device and the operation target, so that the mobile device can obtain a relative coordinate which is a vector from the operation target to the mobile device, obtain a 3D image based on the relative coordinate and the 3D imaging information, and display the 3D image based on the relative coordinate, such that visual perception of the operation target through the mobile device has the 3D image superimposed thereon.
    Type: Application
    Filed: April 4, 2019
    Publication date: December 26, 2019
    Inventors: Shin-Yan Chiou, Hao-Li Liu, Chen-Yuan Liao, Pin-Yuan Chen, Kuo-Chen Wei
  • Method of forming the gate electrode of field effect transistor
    Patent number: 10516031
    Abstract: A method of fabricating a semiconductor device includes depositing a contact etch stop layer (CESL) over a dummy gate electrode, a source/drain (S/D) region and an isolation feature. The method further includes performing a first CMP to expose the dummy gate electrode. The method further includes removing an upper portion of the CESL. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the dummy gate electrode.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: December 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Neng-Kuo Chen, Clement Hsingjen Wann, Yi-An Lin, Chun-Wei Chang, Sey-Ping Sun
  • Motor stator structure
    Patent number: 10511203
    Abstract: A motor stator structure includes a main body and multiple stopper plates. The main body has multiple magnetic poles and a shaft hole. The magnetic poles outward extend from the main body. Each magnetic pole has a free end outward extending from the main body. The shaft hole passes through the main body between two ends thereof. The stopper plates are respectively correspondingly assembled with the free ends of the magnetic poles. In the motor stator structure, the windings are more densely wound on the magnetic poles to enhance the magnetization efficiency.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: December 17, 2019
    Assignee: Asia Vital Components Co., Ltd.
    Inventors: Ching-Min Yang, Kuo-Chen Chang, Yen-Chih Lu
  • DISPLAY DEVICE
    Publication number: 20190378883
    Abstract: A display device is provided. The display device includes an organic light emitting diode display panel, a blue light brightness enhancement film and a polarizing film. The blue light brightness enhancement film is disposed on the organic light emitting diode display panel. The blue light brightness enhancement film includes a cholesteric liquid crystal layer and a quarter-wave phase retardation film, and the quarter-wave phase retardation film is disposed on the cholesteric liquid crystal layer. The polarizing film is disposed on the blue light brightness enhancement film.
    Type: Application
    Filed: September 4, 2018
    Publication date: December 12, 2019
    Applicant: imat corporation
    Inventors: Tsai-An Yu, Da-Ren Chiou, Shih-Ming Hung, Kuo-Chen Wu, Hui-Mei Liu, Hsiu-Yun Hsu
  • Method for generating notification and a mobile device and system using the same
    Patent number: 10499203
    Abstract: A method for generating notification is provided. The method includes following steps. A mobile device is paired with a wearable device. The mobile device has a first motion sensor, and the wearable device has a second motion sensor. Notification synchronization is performed between the mobile device and the wearable device. When an event is triggered and a corresponding notification should be generated, the mobile device generates the corresponding notification if the first motion sensor senses a motion is latter than the second motion sensor senses a motion. When an event is triggered and a corresponding notification should be generated, the wearable device generates the corresponding notification if the second motion sensor senses a motion is latter than the first motion sensor senses a motion.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: December 3, 2019
    Assignee: HTC CORPORATION
    Inventors: Hung-Tao Hsieh, Kuo-Chen Wu
  • ANTENNA STRUCTURE AND WIRELESS COMMUNICATION DEVICE USING THE SAME
    Publication number: 20190363456
    Abstract: A small-scale antenna structure with high gain and with controllable polarization direction includes a motherboard, an antenna array thereon, and antenna units. An array of lens units is superimposed directly over and covers the antenna units. A wireless communication device using the antenna structure is also provided. The wireless communication device includes a main body and the antenna structure. The main body receives the antenna structure.
    Type: Application
    Filed: May 22, 2019
    Publication date: November 28, 2019
    Inventors: KUO-CHENG CHEN, YI-MING CHEN, SIANG-YU SIAO, YI-KUO CHEN, HSI-HSING HSU
  • SERVER AND METHOD FOR SERVICE MATCHING AND RESOURCE MATCHING
    Publication number: 20190356747
    Abstract: The present disclosure provides a server and a method for service matching and resource matching. The server stores a first resource available information and a second resource available information. The server receives a user request from a user device and determines a resource matching information according to the first resource available information and the second resource available information in response to the user request. The server transmits the resource matching information to the user device.
    Type: Application
    Filed: April 19, 2019
    Publication date: November 21, 2019
    Inventors: CHENG-HUA WU, CHENG KUO CHEN, CHIEN-YI LAI
  • Method of forming an array of capacitors, a method of forming DRAM circuitry, and a method of forming an elevationally-elongated conductive structure of integrated circuitry
    Patent number: 10475796
    Abstract: A method of forming elevationally-elongated conductive structures of integrated circuitry comprises providing a substrate comprising a plurality of spaced elevationally-extending conductive vias individually having an upper horizontal perimeter. The conductive vias individually have an upper horizontal perimeter. Masking material is formed directly above the conductive vias. An opening is formed in the masking material directly above individual of the upper horizontal perimeters of individual of the conductive vias. Individual of the masking-material openings comprise a lower horizontal perimeter that overlaps the upper horizontal perimeter of the conductive via directly there-below. Individual of the masking-material openings comprise a lower horizontal perimeter that overlaps the upper horizontal perimeter of the conductive via directly there-below.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: November 12, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Kuo-Chen Wang, Sanh D. Tang
  • Programming method of a robot arm
    Patent number: 10471592
    Abstract: A programming method for a robot arm includes setting and saving operational configurations of the robot arm, establishing an operation process of the robot arm, selecting the operational position icon for applying to the operation sub-process, displaying a selected operational position icon and an operational configuration sub-icon, modifying an operational configuration displayed on the operational configuration sub-icon for facilitating to execute a programming process of the robot arm.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: November 12, 2019
    Assignee: QUANTA STORAGE INC.
    Inventors: Shih-Jung Huang, Pei-Jui Wang, Chien-Te Ye, Shih-Kuo Chen, Fu-Jia Hsu
  • SYSTEM FOR FACILITATING MEDICAL TREATMENT
    Publication number: 20190328462
    Abstract: A system includes an image capturing device, a subject reference marker disposed adjacent to a subject, a tool reference marker disposed on a treatment tool, a display device mounted on an operator, an operator reference marker disposed on the display device, and a processor. The image capturing device includes two image capturing modules that simultaneously and respectively capture two images of the operator, the subject, and the treatment tool. The processor receives the images, analyzes the images to obtain spatial locations of the reference markers, and transmits coordinate information and auxiliary information.
    Type: Application
    Filed: November 2, 2018
    Publication date: October 31, 2019
    Inventors: Hao-Li LIU, Shin-Yan CHIOU, Chen-Yuan LIAO, Wen-Yen LIN, Pin-Yuan CHEN, Kuo-Chen WEI
  • Elevationally-elongated conductive structure of integrated circuitry, method of forming an array of capacitors, method of forming DRAM circuitry, and method of forming an elevationally-elongated conductive structure of integrated circuitry
    Patent number: 10461149
    Abstract: A method of forming elevationally-elongated conductive structures of integrated circuitry comprises providing a substrate comprising a plurality of spaced elevationally-extending conductive vias. Conductive material is formed directly above and directly against the conductive vias. The conductive material has an upper surface and a first sidewall that are directly above individual of the conductive vias in a vertical cross-section. The conductive material has a second sidewall that is not directly above the individual conductive vias. Covering material is formed directly above individual of the upper surfaces and against individual of the first sidewalls directly above the individual conductive vias. The covering material comprises a composition different from that of at least some of the conductive material.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: October 29, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Sanh D. Tang, Kuo-Chen Wang
  • Traffic light control system
    Patent number: 10446025
    Abstract: A traffic light control system includes a first traffic light apparatus and multiple second traffic light apparatuses for displaying a direction pattern indicating intended movement of an emergency vehicle about to pass through an intersection, and a controller storing direction patterns each indicating a direction to take and a specific movement manner of the emergency vehicle. In response to a direction signal corresponding to one of the direction patterns, the controller controls the first traffic light apparatus to display the one direction pattern, and controls each of the second traffic light apparatuses to display a corresponding oriented version of said one direction pattern based on a location of the second traffic light apparatus.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: October 15, 2019
    Inventor: Kuo-Chen Yu