Abstract: Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first device layer, a second device layer and an inter-level connection structure. The first device layer includes a first conductive layer and a first dielectric layer formed on the first conductive layer, the first device layer being formed on a substrate. The second device layer includes a second conductive layer, the second device layer being formed on the first device layer. The inter-level connection structure includes one or more conductive materials and configured to electrically connect to the first conductive layer and the second conductive layer, the inter-level connection structure penetrating at least part of the first dielectric layer. The first conductive layer is configured to electrically connect to a first electrode structure of a first semiconductor device within the first device layer.

Abstract: A semiconductor substrate is provided. Active areas and trench isolation regions are formed. The active areas extend along a first direction. Buried word lines extending along a second direction are formed in the semiconductor substrate. Two of the buried word lines intersect with each of the active areas, separating each of the active areas into a digit line contact area and two cell contact areas. Buried digit lines extending along a third direction are formed above the buried word lines. An upper portion of the trench isolation region is removed to form an L-shaped recessed area around each of the cell contact areas. The L-shaped recessed area exposes sidewalls of the cell contact areas. An epitaxial silicon growth process is then performed to grow an epitaxial silicon layer from the exposed sidewalls and a top surface of each of the cell contact areas, thereby forming enlarged cell contact areas.

Abstract: An electronic device comprises a dielectric structure, interconnect structures extending into the dielectric structure and having uppermost vertical boundaries above uppermost vertical boundaries of the dielectric structure, an additional barrier material covering surfaces of the interconnect structures above the uppermost vertical boundaries of the dielectric structure, an isolation material overlying the additional barrier material, and at least one air gap laterally intervening between at least two of the interconnect structures laterally-neighboring one another. Each of the interconnect structures comprises a conductive material, and a barrier material intervening between the conductive material and the dielectric structure. The at least one air gap vertically extends from a lower portion of the isolation material, through the additional barrier material, and into the dielectric structure. Electronic systems and method of forming an electronic device are also described.

Abstract: A system includes an image capturing device, a subject reference marker disposed adjacent to a subject, a tool reference marker disposed on a treatment tool, a display device mounted on an operator, an operator reference marker disposed on the display device, and a processor. The image capturing device includes two image capturing modules that simultaneously and respectively capture two images of the operator, the subject, and the treatment tool. The processor receives the images, analyzes the images to obtain spatial locations of the reference markers, and transmits coordinate information and auxiliary information.

Abstract: Provided is a positioning adjustment apparatus for a mobile device in scanning and photography, including a main body and a lifting unit. An object to be scanned is placed on the main body, and the mobile device placed on a carrier platform of the lifting unit can move up and down along with the lifting unit to adjust a distance between the mobile device and the object to be scanned. After scanning, a document is sent directly to a shredder. The invention also provides a wireless signal transmission to operate the mobile device for scanning or photography to meet various demands of the users.

Abstract: A method includes depositing a contact etch stop layer (CESL) over a gate, a source/drain (S/D) region and an isolation feature. The method includes performing a first chemical mechanical planarization (CMP) to expose the gate. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the gate.

Abstract: A semiconductor device comprises semiconductive pillars; digit lines laterally between the semiconductive pillars; nitride caps vertically overlying the digit lines; nitride structures overlying surfaces of the nitride caps; redistribution material structures comprising upper portions overlying upper surfaces of the nitride caps and the nitride structures, and lower portions overlying upper surfaces of the semiconductive pillars; a low-K dielectric material laterally between the digit lines and the semiconductive pillars; air gaps laterally between the low-K dielectric material and the semiconductive pillars, and having upper boundaries below the upper surfaces of the nitride caps; and a nitride dielectric material laterally between the air gaps and the semiconductive pillars. Memory devices, electronic systems, and method of forming a semiconductor device are also described.

Abstract: A method for programming a robot in a vision base coordinate is provided. The method includes the following steps. A robot is drawn to an operation point. The coordinates of the operation point in a photo operation are set as a new point. A teaching image is captured and a vision base coordinate system is established. A new point is added according to the newly established vision base coordinate system. When the robot is operating, the robot is controlled to capture an image from a photo operation point. A comparison between the captured image and a teaching image is made. The image being the same as the teaching image is searched according to the comparison result. Whether the vision base coordinate system maintains the same corresponding relation as in the teaching process is checked. Thus, the robot can be precisely controlled.

Abstract: A battery module for use in a battery system is operable in a bottom mode, a top mode or a middle mode during an enabled state. The battery module includes a battery unit and a battery control circuit. The battery unit which includes at least one battery generates a battery unit voltage between a positive terminal and a negative terminal of the battery unit. The battery control circuit is powered by the battery unit voltage and is configured to control the battery unit. The battery control circuit includes an enable terminal, an upstream input terminal, an upstream output terminal, a downstream input terminal, and a downstream output terminal. When the enable terminal is at an operation enabling level, or when the upstream input terminal is at an upstream enabling level, the battery module enters the enabled state.

Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.

Abstract: A millimeter wave channel estimation method comprises sending signals through a millimeter wave channel according to a first beamforming matrix, performing a channel estimation on the millimeter wave to generate a first measured matrix, and estimating and obtaining at least one angle of departure of the millimeter wave channel according to the first measured matrix and an angle compressive sensing matrix. The first beamforming matrix comprises a plurality of first beamforming vectors, and the first beamforming vectors respectively corresponds to a plurality of first beamforming patterns. The first measured matrix comprises a plurality of first measured parameters respectively corresponding to the first beamforming vectors.

Abstract: A semiconductor device comprises semiconductive pillars; digit lines laterally between the semiconductive pillars; nitride caps vertically overlying the digit lines; nitride structures overlying surfaces of the nitride caps; redistribution material structures comprising upper portions overlying upper surfaces of the nitride caps and the nitride structures, and lower portions overlying upper surfaces of the semiconductive pillars; a low-K dielectric material laterally between the digit lines and the semiconductive pillars; air gaps laterally between the low-K dielectric material and the semiconductive pillars, and having upper boundaries below the upper surfaces of the nitride caps; and a nitride dielectric material laterally between the air gaps and the semiconductive pillars. Memory devices, electronic systems, and method of forming a semiconductor device are also described.

Abstract: A computer-aided recognition system for treatment response of rectal cancer is provided to predict the probability of a pathological complete response (pCR) of a rectal cancer patient after preoperative neoadjuvant chemoradiotherapy. The system includes a random forest model having several decision trees. Each decision tree has at least a feature node. Each feature node generates two branches according to a feature threshold, wherein each branch connects to another feature node or corresponds to an elementary pCR predicting probability. The random forest model integrates the elementary pCR probability of each decision tree, so as to generate a final pCR probability.

Abstract: A millimeter wave channel estimation method comprises sending signals through a millimeter wave channel according to a first beamforming matrix, performing a channel estimation on the millimeter wave to generate a first measured matrix, and estimating and obtaining at least one angle of departure of the millimeter wave channel according to the first measured matrix and an angle compressive sensing matrix. The first beamforming matrix comprises a plurality of first beamforming vectors, and the first beamforming vectors respectively corresponds to a plurality of first beamforming patterns. The first measured matrix comprises a plurality of first measured parameters respectively corresponding to the first beamforming vectors.

Abstract: A prediction system of tumor image-aided prediction of prognosis for patients with uterine cervical cancer is provided. The prediction system includes a data augmentation module and a deep convolution neural network model. The data augmentation module is used to apply a data expansion process of the image data , so as to generate a plurality of slice sets of the uterine cervical cancer tumor. The deep convolution neural network model is used to apply a feature analysis to the slices, so as to predict the prognosis of a patient after chemoradiotherapy.

Abstract: An antenna and antenna module with a structure increasing radio wave coverage but reducing cross interference between modules includes a circuit board in the shape of an octagon and four antenna modules. The circuit board thus includes eight side surfaces, and the four antenna modules are respectively disposed on four non-adjacent side surfaces of the octagon. Each antenna module is electrically connected to the side surface by a feed portion. A wireless communication device using the antenna structure is also disclosed.

Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.

Abstract: A method includes depositing a contact etch stop layer (CESL) over a gate, a source/drain (S/D) region and an isolation feature. The method includes performing a first chemical mechanical planarization (CMP) to expose the gate. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the gate.

Abstract: Disclosures of the present invention mainly describe an alloy for making trace wires of a touch panel. The alloy consists of a first clapping layer, a copper layer, and a second clapping layer. By applying the alloy as the trace wires of the touch panel, feather-like microstructures are effectively prevented from forming between the trace wires and sensor units of the touch panel. On the other hand, because the alloy is able to completely defense the corrosion attack coming from HNO3-based etchant, the trace wires made of the alloy exhibits an outstanding corrosion resistant during the patterning process of the AgNW-made sensor units. Therefore, during patterning the AgNW-made sensor units, the trace wires can have a large processing window, such that the touch panel is hence able to have a good manufacturing yield rate and possesses an outstanding reliability.

Abstract: A semiconductor device comprises semiconductive pillars; digit lines laterally between the semiconductive pillars; nitride caps vertically overlying the digit lines; nitride structures overlying surfaces of the nitride caps; redistribution material structures comprising upper portions overlying upper surfaces of the nitride caps and the nitride structures, and lower portions overlying upper surfaces of the semiconductive pillars; a low-K dielectric material laterally between the digit lines and the semiconductive pillars; air gaps laterally between the low-K dielectric material and the semiconductive pillars, and having upper boundaries below the upper surfaces of the nitride caps; and a nitride dielectric material laterally between the air gaps and the semiconductive pillars. Memory devices, electronic systems, and method of forming a semiconductor device are also described.