Abstract: The disclosure relates to a push-and-pull latch device including a housing, a latching component, a first elastic component, an inner-sleeve assembly, an inner-shaft component, a second elastic component and a third elastic component. The first elastic component abuts the latching component. The latching component engages an object through the housing. The inner-sleeve assembly is accommodated within the housing. The inner-shaft component is partially accommodated within the inner-sleeve assembly. The second elastic component is abutted between the inner-shaft component and the inner-sleeve assembly. The third elastic component includes a fixed portion connected to the inner-shaft component and an engaging end engaged with a guide groove of the inner-sleeve assembly.

Abstract: A method and system of evaluating a valid analysis region of a specific scene, wherein the method and system performs image analyses on continuous images/frames of a specific scene to obtain detectable object or event information therein, so as to generate a closed valid analysis region to reduce the overall data and loading of image analyses during actual monitoring, processing and analyzing of the specific scene.

Abstract: Some embodiments include an assembly having active material structures arranged in an array having rows and columns. Each of the active material structures has a first side which includes a bit contact region, and has a second side which includes a cell contact region. Each of the bit contact regions is coupled with a first redistribution pad. Each of the cell contact regions is coupled with a second redistribution pad. The first redistribution pads are coupled with bitlines, and the second redistribution pads are coupled with programmable devices. Some embodiments include methods of forming memory arrays.

Abstract: A small-scale antenna structure with high gain and with controllable polarization direction includes a motherboard, an antenna array thereon, and antenna units. An array of lens units is superimposed directly over and covers the antenna units. A wireless communication device using the antenna structure is also provided. The wireless communication device includes a main body and the antenna structure. The main body receives the antenna structure.

Abstract: The present invention relates to a method for reducing an effective amount of Bevacizumab required for treating brain tumor. The present invention also provides a kit used for the aforesaid method. The present method adopts a combination strategy to combine Bevacizumab treatment with ultrasound exposure, which comprises at least the following steps: administering Bevacizumab to a subject; administering an ultrasound-response medium to said subject; and administering said subject with an ultrasound exposure. Specific effective amount of the Bevacizumab treatment and the ultrasound exposure were identified. The efficacy of conventional Bevacizumab treatment is significantly improved.

Abstract: A method of forming elevationally-elongated conductive structures of integrated circuitry comprises providing a substrate comprising a plurality of spaced elevationally-extending conductive vias. Conductive material is formed directly above and directly against the conductive vias. The conductive material has an upper surface and a first sidewall that are directly above individual of the conductive vias in a vertical cross-section. The conductive material has a second sidewall that is not directly above the individual conductive vias. Covering material is formed directly above individual of the upper surfaces and against individual of the first sidewalls directly above the individual conductive vias. The covering material comprises a composition different from that of at least some of the conductive material.

Abstract: A dashboard device of a vehicle includes a storage component and a processor. The storage component stores a plurality of different language packs and a first national table listing a first number of unique language indices associated respectively with the language packs. The processor is coupled to the storage component and is programmed to, in response to receipt of a machine code and a second number related to another plurality of unique language indices from a portable electronic device, use one of the language packs to set language used on the dashboard device based on content of the machine code and a relationship between the first and second numbers.

Abstract: A prediction system of tumor image-aided prediction of prognosis for patients with uterine cervical cancer is provided. The prediction system includes a data augmentation module and a deep convolution neural network model. The data augmentation module is used to apply a data expansion process of the image data, so as to generate a plurality of slice sets of the uterine cervical cancer tumor. The deep convolution neural network model is used to apply a feature analysis to the slices, so as to predict the prognosis of a patient after chemoradiotherapy.

Abstract: Disclosed are near-eye displaying methods and systems capable of multiple depths of field imaging. The method comprises two steps. At a first step, one or more pixels of a self-emissive display emit a light to a collimator such that the light passing through the collimator is collimated to form a collimated light. At a second step, the self-emissive display provides at least one collimated light direction altering unit on a path of the light from the collimator to change direction of the collimated light to enable the collimated light from at least two pixels to intersect and focus at a different location so as to vary a depth of field.

Abstract: Disclosed is a display assembly which comprises a substrate, a plurality of light emitting units, a transistor unit and a capacitor unit corresponding to each of the plurality of light emitting units. Each of the plurality of light emitting units is electrically coupled to the corresponding transistor unit and the capacitor unit, all of which are independently provided on a side of the substrate. A spacing between each of the plurality of light emitting units is at least two times of a first threshold length.

Abstract: A method of forming elevationally-elongated conductive structures of integrated circuitry comprises providing a substrate comprising a plurality of spaced elevationally-extending conductive vias individually having an upper horizontal perimeter. The conductive vias individually have an upper horizontal perimeter. Masking material is formed directly above the conductive vias. An opening is formed in the masking material directly above individual of the upper horizontal perimeters of individual of the conductive vias. Individual of the masking-material openings comprise a lower horizontal perimeter that overlaps the upper horizontal perimeter of the conductive via directly there-below. Individual of the masking-material openings comprise a lower horizontal perimeter that overlaps the upper horizontal perimeter of the conductive via directly there-below.

Abstract: An electronic device for sending electronic data includes an electricity-using target, a storage unit and a processing unit. The storage unit stores a first communication target identifier used to identify a first communication target under a first specific application communication protocol, and a second communication target identifier used to identify a second communication target under a second specific application communication protocol being different from the first specific application communication protocol. The processing unit accesses the first and the second communication target identifiers by means of the electricity-using target, sends the electronic data toward the first communication target based on the accessed first communication target identifier and the first specific application communication protocol, and sends the electronic data toward the second communication target based on the accessed second communication target identifier and the second specific application communication protocol.

Abstract: A beamforming transmission device includes a control unit, at least one radio frequency unit, and at least one signal transmission unit. The control unit is configured to receive a radio frequency signal and channel state information of at least two pieces of user equipment, and to generate a control signal according to the radio frequency signal and the channel state information of the at least two pieces of user equipment. The radio frequency unit is coupled to the control unit. The radio frequency unit is configured to receive the control signal and generate a beamforming signal according to the control signal. The signal transmission unit is coupled to the radio frequency unit. The signal transmission unit is configured to transmit the beamforming signal to the at least two pieces of user equipment.

Abstract: Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first device layer, a second device layer and an inter-level connection structure. The first device layer includes a first conductive layer and a first dielectric layer formed on the first conductive layer, the first device layer being formed on a substrate. The second device layer includes a second conductive layer, the second device layer being formed on the first device layer. The inter-level connection structure includes one or more conductive materials and configured to electrically connect to the first conductive layer and the second conductive layer, the inter-level connection structure penetrating at least part of the first dielectric layer. The first conductive layer is configured to electrically connect to a first electrode structure of a first semiconductor device within the first device layer.

Abstract: A semiconductor substrate is provided. Active areas and trench isolation regions are formed. The active areas extend along a first direction. Buried word lines extending along a second direction are formed in the semiconductor substrate. Two of the buried word lines intersect with each of the active areas, separating each of the active areas into a digit line contact area and two cell contact areas. Buried digit lines extending along a third direction are formed above the buried word lines. An upper portion of the trench isolation region is removed to form an L-shaped recessed area around each of the cell contact areas. The L-shaped recessed area exposes sidewalls of the cell contact areas. An epitaxial silicon growth process is then performed to grow an epitaxial silicon layer from the exposed sidewalls and a top surface of each of the cell contact areas, thereby forming enlarged cell contact areas.

Abstract: An electronic device comprises a dielectric structure, interconnect structures extending into the dielectric structure and having uppermost vertical boundaries above uppermost vertical boundaries of the dielectric structure, an additional barrier material covering surfaces of the interconnect structures above the uppermost vertical boundaries of the dielectric structure, an isolation material overlying the additional barrier material, and at least one air gap laterally intervening between at least two of the interconnect structures laterally-neighboring one another. Each of the interconnect structures comprises a conductive material, and a barrier material intervening between the conductive material and the dielectric structure. The at least one air gap vertically extends from a lower portion of the isolation material, through the additional barrier material, and into the dielectric structure. Electronic systems and method of forming an electronic device are also described.

Abstract: A system includes an image capturing device, a subject reference marker disposed adjacent to a subject, a tool reference marker disposed on a treatment tool, a display device mounted on an operator, an operator reference marker disposed on the display device, and a processor. The image capturing device includes two image capturing modules that simultaneously and respectively capture two images of the operator, the subject, and the treatment tool. The processor receives the images, analyzes the images to obtain spatial locations of the reference markers, and transmits coordinate information and auxiliary information.

Abstract: Provided is a positioning adjustment apparatus for a mobile device in scanning and photography, including a main body and a lifting unit. An object to be scanned is placed on the main body, and the mobile device placed on a carrier platform of the lifting unit can move up and down along with the lifting unit to adjust a distance between the mobile device and the object to be scanned. After scanning, a document is sent directly to a shredder. The invention also provides a wireless signal transmission to operate the mobile device for scanning or photography to meet various demands of the users.

Abstract: A method includes depositing a contact etch stop layer (CESL) over a gate, a source/drain (S/D) region and an isolation feature. The method includes performing a first chemical mechanical planarization (CMP) to expose the gate. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the gate.

Abstract: A semiconductor device comprises semiconductive pillars; digit lines laterally between the semiconductive pillars; nitride caps vertically overlying the digit lines; nitride structures overlying surfaces of the nitride caps; redistribution material structures comprising upper portions overlying upper surfaces of the nitride caps and the nitride structures, and lower portions overlying upper surfaces of the semiconductive pillars; a low-K dielectric material laterally between the digit lines and the semiconductive pillars; air gaps laterally between the low-K dielectric material and the semiconductive pillars, and having upper boundaries below the upper surfaces of the nitride caps; and a nitride dielectric material laterally between the air gaps and the semiconductive pillars. Memory devices, electronic systems, and method of forming a semiconductor device are also described.