Abstract: Techniques for the reading and writing of data in multi-state non-volatile memories are described. Data is written into the memory in a binary format, read into the data registers on the memory, and “folded” within the registers, and then written back into the memory in a multi-state format. In the folding operation, binary data from a single word line is folded into a multi-state format and, when rewritten in multi-state form, is written into a only a portion of another word line. A corresponding reading technique, where the data is “unfolded” is also described. The techniques further allow for the data to be encoded with an error correction code (ECC) on the controller that takes into account its eventual multi-state storage prior to transferring the data to the memory to be written in binary form. A register structure allowing such a “folding” operation is also presented.

Abstract: A latch system employs momentum exchange impact damping. A latch is slicleably arranged within a housing so that the latch can slide between a latch position and a release position. A damper spring urges a damper against a wedge of the latch. When a mechanical impact urges said latch toward the release position, the latch wedge impacts the damper so as to exchange momentum from the latch to the damper so that the latch remains in the latch position.

Abstract: Disclosed is an integrated circuit device including a plurality of power domain blocks, which includes a core power domain block. A power control circuit is configured to control power supplied to each of the plurality of power domain blocks independently responsive to control communication from the core power domain block. The power control circuit includes a plurality of power clusters corresponding to the plurality of power domain blocks, respectively. The plurality of power clusters control power supplied to the plurality of power domain blocks, respectively, independently responsive to the control communication from the core power domain block.

Abstract: A method of storing data in a storage medium of a data storage device comprises storing input data in the storage medium, and reading the input data from the storage medium and compressing the read data during a background operation of the data storage device.

Abstract: A resistance-change random access memory device includes a resistance-change memory cell array having a plurality of resistance-change memory cells, where a plurality of word lines are connected to respective first terminals of the plurality of resistance-change memory cells. A plurality of bit lines are disposed perpendicular to the word lines and connected to respective second terminals of the plurality of resistance-change memory cells. The device also includes a plurality of discharge elements that are capable of connecting or disconnecting respective bit lines from a discharge voltage, where the discharge elements connect the respective bit lines to the discharge voltage before write and read operations.

Abstract: An imaging system includes a frame with a retroreflective bezel and cameras attached directly to the frame.

Abstract: A variable resistance memory device includes a variable resistance memory cell array including a plurality of variable resistance memory cells; a plurality of global word lines configured to drive the variable resistance memory cell array; and a plurality of local word line decoders. Each of the plurality of local word line decoders includes a first transistor having a gate connected to the global word line. A voltage greater than an operation voltage of one or more of the plurality of local word line decoders is applied to a selected one of the plurality of global word lines.

Abstract: The present invention provides a wing-flapping flying apparatus, which can fly by moving its wings similar to a bird hovering or flying in the air by flapping its wings. The wing-flapping flying apparatus comprises: a body; a rotating shaft rotatably joined to the body; driving means for rotating the rotating shaft; and wings reciprocated between two points and connected to the rotating shaft so as to be rotated together with the rotating shaft and to be relatively torsionally rotated with respect to the rotating shaft. The wing-flapping flying apparatus generates lift throughout an entire wing-flapping movement without generating lift only throughout the half of a wing-flapping movement or offsetting the generated lift by the other half of the wing-flapping movement. Therefore, the wing-flapping flying apparatus can provide not only a stable flight but also a softly hovering or ascending and descending flight.

Abstract: A semiconductor memory device includes a memory cell array having a plurality of variable resistance memory cells divided into first and second areas. An I/O circuit is configured to access the memory cell array under the control of control logic so as to access the first or second area in response to an external command. The I/O circuit accesses the first area using a memory cell unit and the second area using a page unit.

Abstract: There is provided a ubiquitous service providing system using a mobile communication terminal, the system including: a context aware unit determining where a ubiquitous service is to be provided or not through short message service (SMS) or multimedia messaging service (MMS) by analyzing radio frequency identification (RFID) tag information and context transmitted from an RFID identifier installed at a specific position; a repository unit storing the ubiquitous service to be provided, and contents and detailed information related to the ubiquitous service; an analyzing unit selecting a ubiquitous service from the repository unit based on the analyzed RFID tag information and context; a message generating unit generating final contents to be transmitted to a visitor using context and the contents and detailed information of the repository unit by executing the ubiquitous service selected by the analyzing unit and then, converting the final contents into a message to be transmitted through a SMS or MMS method;

Abstract: Provided are a video call device and method. The video call device performs a video call by exchanging images with another video call device in real time. The video call device includes: an image obtaining unit obtaining an original image in real time; an image processing unit comprising a first image conversion unit which receives the original image and converts the original image into a first conversion image in real time; and an interface unit transmitting the first conversion image.

Abstract: Column based defect management techniques are presented. Each column of the memory has an associated isolation latch or register whose value indicates whether the column is defective, but in addition to this information, for columns marked as defective, additional information is used to indicate whether the column as a whole is to be treated as defective, or whether just individual bits of the column are defective. The defective elements can then be re-mapped to a redundant element at either the appropriate bit or column level based on the data. When a column is bad, but only on the bit level, the good bits can still be used for data, although this may be done at a penalty of under programming for some bits, as is described further below. A self contained Built In Self Test (BIST) flow constructed to collect the bit information through a set of column tests is also described.

Abstract: A write driver circuit for a memory that includes phase-change memory cells changeable between a RESET state resistance and a SET state resistance in response to an applied current pulse, the write driver circuit including a write current level adjusting unit configured to determine first to n-th SET state current levels in response to a SET state current level signal, where n is an integer greater than 1, and configured to determine a RESET state current level in response to a RESET state current level signal, and a write current output unit configured to generate one of a SET state current pulse and a RESET state current pulse corresponding to a SET state current level or a RESET state current level determined by the write current level adjusting unit.

Abstract: Techniques for the reading and writing of data in multi-state non-volatile memories are described. Data is written into the memory in a binary format, read into the data registers on the memory, and “folded” within the registers, and then written back into the memory in a multi-state format. In the folding operation, binary data from a single word line is folded into a multi-state format and, when rewritten in multi-state form, is written into a only a portion of another word line. A corresponding reading technique, where the data is “unfolded” is also described. The techniques further allow for the data to be encoded with an error correction code (ECC) on the controller that takes into account its eventual multi-state storage prior to transferring the data to the memory to be written in binary form. A register structure allowing such a “folding” operation is also presented.

Abstract: A data storage system comprising a storage device comprising at least one nonvolatile memory, and a controller connected to the storage device through a channel. The memory controller sends part or all of a command, address and data for a next operation to the nonvolatile memory while the nonvolatile memory device is in a busy state. The memory controller then performs a background operation while the nonvolatile memory device remains in the busy state.

Abstract: A power supplying circuit (PSC) and a phase-change random access memory (PRAM) including the PSC. According to an aspect of the invention, the PSC includes: a first voltage generator configured to output a first voltage to a first terminal; and a second voltage generator configured to output a second voltage to a second terminal, the second voltage generator including: a voltage pump unit configured to output the second voltage based on a clock signal and a pump control signal; a pump output detector coupled to the voltage pump unit, the pump output detector configured to output a pump output detection signal; and a discharging unit coupled to the voltage pump unit, the discharging unit configured to discharge a level of the second voltage to a predetermined level in response to a discharge signal. Embodiments of the invention may prevent write and/or read malfunctions that can occur due to changes in the level of a voltage supplied to PRAM cell blocks.

Abstract: In a low drop out (LDO) regulator and a semiconductor device including the LDO regulator, the LDO regulator regulates a power supply voltage and applies the regulated power supply voltage to a load. The LDO regulator comprises: an output node connected to the load; a pass transistor that applies a power supply voltage to the output node; and a controller that generates a load enable signal enabling the load by delaying a regulator enable signal by a first delay time, and that increases a gate voltage of the pass transistor after receiving the regulator enable signal to thereby reduce a current flowing through the pass transistor.

Abstract: A method and apparatus for generating multi-phase clock signals. The multi-phase generating method includes: generating L reference clock signal groups having predetermined phase delay intervals from an external clock signal, wherein each reference clock signal group includes M sub reference clock signals; averaging phases of sub reference clock signals for each reference clock signal group, and generating L main reference clock signals from the L×M sub reference clock signals; and sequentially delaying the L main reference clock signals, and generating the N multi-phase clock signals having the different phases. Because a plurality of clock signals having equal phase delay intervals between each other are generated regardless of the frequency of a received clock signal, the yield of Delay Locked Loop (DLL) circuits is improved using the multi-phase generating apparatus.

Abstract: A resistance variable memory device includes a resistance variable memory cell array, a data register that prefetches read data of the resistance variable memory cell array, a data output unit that receives the prefetched read data from the data register and outputs the received data, and a page mode setting unit that sets one of a first page mode and a second page mode as a page mode.

Abstract: A resistance-change random access memory device includes a resistance-change memory cell array having a plurality of resistance-change memory cells, where a plurality of word lines are connected to respective first terminals of the plurality of resistance-change memory cells. A plurality of bit lines are disposed perpendicular to the word lines and connected to respective second terminals of the plurality of resistance-change memory cells. The device also includes a plurality of discharge elements that are capable of connecting or disconnecting respective bit lines from a discharge voltage, where the discharge elements connect the respective bit lines to the discharge voltage before write and read operations.