Patents by Inventor Kyu-Jin Choi

Kyu-Jin Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10911002
    Abstract: A multistage power amplifier includes a first amplification circuit disposed in a front stage of the multistage power amplifier, a first bias circuit configured to output a first bias current, a bias path circuit, an envelope detection circuit, and an alternating current (AC) path circuit. The envelope detection circuit is configured to output a direct current (DC) detection voltage based on an envelope signal of a radio frequency (RF) signal input to the first amplification circuit. The AC path circuit is configured to branch an AC signal from an input terminal of the first amplification circuit and transfer the AC signal to the first bias circuit, upon the first amplification circuit operating in a high power driving region based on the DC detection voltage. The first bias circuit is configured to compensate for the first bias current based on the AC signal transferred through the AC path circuit.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: February 2, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Kyu Jin Choi
  • Publication number: 20210017644
    Abstract: Provided is a batch-type substrate processing apparatus. The substrate processing apparatus includes a vertical reaction tube having an internal space for receiving a substrate boat in which a substrate is stacked in multiple stages, a deposition gas supply unit configured to supply a deposition gas inside the reaction tube, a heater disposed outside the reaction tube to provide a thermal energy inside the reaction tube, and an adhesion layer coated on an inner wall of the reaction tube and to which a deposition by-product layer by an excess deposition gas is attached.
    Type: Application
    Filed: June 22, 2020
    Publication date: January 21, 2021
    Inventors: Hee Seok KIM, Kyu Jin CHOI, Kang Il LEE
  • Patent number: 10892719
    Abstract: A multistage power amplifier comprises a first amplification circuit which receives a first bias current; a second amplification circuit which receives a second bias current; an envelope detection circuit which outputs a direct current (DC) detection voltage based on an envelope of an input radio frequency (RF) signal; and a bias compensation circuit which compensates for the first bias current based on the second bias current in response to the DC detection voltage.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: January 12, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyu Jin Choi, Je Hee Cho
  • Patent number: 10868503
    Abstract: There is provided a power amplifier and an integrated circuit including the power amplifier. The power amplifier includes a first amplifier configured to amplify a first signal; a phase shifter configured to invert the first signal; and a harmonic sinker connected between an output terminal of the phase shifter and an output terminal of the first amplifier, configured to amplify an output signal of the phase shifter, and configured to have a conduction angle narrower than a conduction angle of the first amplifier.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: December 15, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Kyu Jin Choi
  • Patent number: 10840118
    Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space of the tube assembly, a gas supply unit installed on one side of the tube assembly to supply a process gas to each of the plurality of substrates in the inner space; and an exhaust unit connected to the tube assembly to exhaust the process gas supplied into the inner space, the substrate processing apparatus that induces a laminar flow to supply a uniform amount of process gas to a top surface of the substrate.
    Type: Grant
    Filed: September 5, 2016
    Date of Patent: November 17, 2020
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Cha Young Yoo, Sung Tae Je, Kyu Jin Choi, Ja Dae Ku, Jun Kim, Bong Ju Jung, Kyung Seok Park, Yong Ki Kim, Jae Woo Kim
  • Publication number: 20200336115
    Abstract: A bias circuit includes a current generating circuit generating a first compensation current and a second compensation current, in which an ambient temperature change is reflected, based on a reference current, a first temperature compensation circuit generating a first base bias current, based on the first compensation current, to output the first base bias current to a base node of an amplifying circuit, and a second temperature compensation circuit generating a second base bias current, based on the second compensation current, to output the second base bias current to the base node of the amplifying circuit.
    Type: Application
    Filed: August 27, 2019
    Publication date: October 22, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Je Hee CHO
  • Publication number: 20200336116
    Abstract: A bias circuit includes a current generating circuit generating an internal base current based on a reference current, a bias output circuit generating a base bias current based on the internal base current and outputting the base bias current to an amplifying circuit, and a temperature compensation circuit regulating the base bias current based on a temperature voltage reflecting a change in ambient temperature.
    Type: Application
    Filed: August 7, 2019
    Publication date: October 22, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Je Hee CHO
  • Patent number: 10741396
    Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube having an inner space, a substrate support on which a plurality of substrates are stacked in multistage within the tube, the substrate support individually defining a plurality of processing spaces in which the plurality of substrates are respectively processed, a first gas supply part configured to supply a first gas into all the plurality of processing spaces, a second gas supply part comprising a plurality of injectors disposed to respectively correspond to the plurality of processing spaces so that the second gas is individually supplied onto each of the plurality of substrates, and an exhaust part configured to exhaust the gases within the tube. Thus, the gas may be individually supplied into each of the processing spaces in which the plurality of substrates are respectively processed.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: August 11, 2020
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Woo Duck Jung, Sung Tae Je, Kyu Jin Choi, Seong Min Han
  • Patent number: 10707820
    Abstract: A power amplifying apparatus includes a first bias circuit that generates a first bias current having a first magnitude, a first amplification circuit connected between a first node and a second node, and that receives the first bias current, amplifies a signal input through the first node, and outputs a first amplified signal to the second node, a second bias circuit that generates a second bias current having a second magnitude that is different from the first magnitude of the first bias current, and a second amplification circuit connected in parallel with the first amplification circuit between the first node and the second node, and that receives the second bias current, amplifies the signal input through the first node, and outputs a second amplified signal to the second node, wherein the second amplification circuit may have a size that is different from a size of the first amplification circuit.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: July 7, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyu Jin Choi, Jae Hyouck Choi
  • Patent number: 10693424
    Abstract: A power amplifying apparatus includes a first bias circuit configured to generate a first bias current, a first amplification circuit, configured to receive the first bias current, amplify a signal input to the first amplification circuit through a first node, and output a first amplified signal to a second node, a second bias circuit, configured to generate a second bias current which has a magnitude different from a magnitude of the first bias current, and a second amplification circuit, connected in parallel with the first amplification, configured to receive the second bias current, amplify the signal input through the first node, and output a second amplified signal to the second node. The second amplification circuit is configured to output the second amplified signal with a third-harmonic component that has a phase offsetting a third-order intermodulation distortion (IM3) component included in the first amplified signal, based on the second bias current.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: June 23, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Kyu Jin Choi
  • Patent number: 10581392
    Abstract: A power amplifying device includes a first amplification circuit amplifying a first signal having a first frequency component and a second frequency component; a second amplification circuit amplifying a second signal received through an output node of the first amplification circuit; a filter circuit connected between a ground node of the first amplification circuit and a common ground to pass the first and second frequency components to the common ground through the ground node; and an inverting circuit that phase-inverts a signal including second harmonic components of the first and second frequency components that are received through the ground node of the first amplification circuit and provide the phase inverted signal to the output node of the first amplification circuit.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: March 3, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Kyu Jin Choi
  • Publication number: 20200014336
    Abstract: A multistage power amplifier includes a first amplification circuit disposed in a front stage of the multistage power amplifier, a first bias circuit configured to output a first bias current, a bias path circuit, an envelope detection circuit, and an alternating current (AC) path circuit. The envelope detection circuit is configured to output a direct current (DC) detection voltage based on an envelope signal of a radio frequency (RF) signal input to the first amplification circuit. The AC path circuit is configured to branch an AC signal from an input terminal of the first amplification circuit and transfer the AC signal to the first bias circuit, upon the first amplification circuit operating in a high power driving region based on the DC detection voltage. The first bias circuit is configured to compensate for the first bias current based on the AC signal transferred through the AC path circuit.
    Type: Application
    Filed: April 3, 2019
    Publication date: January 9, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Kyu Jin CHOI
  • Publication number: 20200014343
    Abstract: A multistage power amplifier comprises a first amplification circuit which receives a first bias current; a second amplification circuit which receives a second bias current; an envelope detection circuit which outputs a direct current (DC) detection voltage based on an envelope of an input radio frequency (RF) signal; and a bias compensation circuit which compensates for the first bias current based on the second bias current in response to the DC detection voltage.
    Type: Application
    Filed: February 25, 2019
    Publication date: January 9, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Je Hee CHO
  • Patent number: 10505512
    Abstract: A tunable inductor circuit includes a first common transmission line having one end connected to a first terminal; a first uncommon transmission line having one end connected to another end of the first common transmission line; a first switch circuit configured to selectively connect one of the other end of the first common transmission line and another end of the first uncommon transmission line to a first common node; a second common transmission line having one end connected to the first common node; a second uncommon transmission line having one end connected to another end of the second common transmission line; and a second switch circuit configured to selectively connect one of the other end of the second common transmission line and another end of the second uncommon transmission line to a second terminal.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: December 10, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyu Jin Choi, Jae Hyouck Choi
  • Patent number: 10429876
    Abstract: A reference current generating circuit includes a current source circuit configured to generate a reference current based on an internal resistor; and a compensation circuit configured to comprise a first compensation circuit comprising a first compensation resistor and a second compensation resistor, and the first compensation resistor and the second compensation resistor are configured to convert the reference current into a first output current and compensate for process variation of the current source circuit.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: October 1, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak Jo, Jeong Hoon Kim, Kyu Jin Choi, Jong Ok Ha
  • Patent number: 10392702
    Abstract: Provided is a substrate processing apparatus, and more particularly, a batch-type substrate processing apparatus where processes can be performed independently on a plurality of substrates. The substrate processing apparatus includes a substrate boat including a plurality of partition plates and a plurality of connection rods, an internal reaction tube, a gas supply unit, and an exhaust unit, and a plurality of substrates are loaded to be separated from the partition plates.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: August 27, 2019
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Woo Duck Jung, Kyu Jin Choi, Song Hwan Park, Seong Min Han, Sung Ha Choi
  • Patent number: 10364494
    Abstract: The present disclosure relates to a substrate processing apparatus, and more particularly, a substrate processing apparatus that is capable of improving process uniformity on an entire surface of a substrate. The substrate processing apparatus includes a substrate boat in which a substrate is loaded, a reaction tube in which a processing process for the substrate loaded in the substrate boat is performed, a gas supply unit configured to supply a process gas into the reaction tube through an injection nozzle disposed on one side of the reaction tube, a heating unit including a plurality of vertical heating parts, which are disposed along a circumference of the reaction tube outside the reaction tube and configured to divide the circumference to the reaction tube into a plurality of portions so as to independently heat each of the divided portions of the reaction tube, and a control unit configured to control the heating unit.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: July 30, 2019
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Cha Young Yoo, Sung Tae Je, Kyu Jin Choi, Ja Dae Ku, Jun Kim, Bong Ju Jung, Kyung Seok Park, Yong Ki Kim, Jae Woo Kim
  • Publication number: 20190199291
    Abstract: A power amplifying apparatus includes a first bias circuit configured to generate a first bias current by adding a boost current to a base bias current generated from a reference current, a first amplification circuit configured to receive the first bias current and amplify a signal input through an input terminal of the first amplification unit to output a first amplified signal, and a bias boosting circuit configured to generate the boost current, based on a magnitude of a harmonic component in the amplified signal output from the first amplification circuit.
    Type: Application
    Filed: October 24, 2018
    Publication date: June 27, 2019
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Jae Hyouck CHOI, Je Hee CHO
  • Publication number: 20190199293
    Abstract: A power amplifying apparatus includes a first bias circuit configured to generate a first bias current, a first amplification circuit, configured to receive the first bias current, amplify a signal input to the first amplification circuit through a first node, and output a first amplified signal to a second node, a second bias circuit, configured to generate a second bias current which has a magnitude different from a magnitude of the first bias current, and a second amplification circuit, connected in parallel with the first amplification, configured to receive the second bias current, amplify the signal input through the first node, and output a second amplified signal to the second node. The second amplification circuit is configured to output the second amplified signal with a third-harmonic component that has a phase offsetting a third-order intermodulation distortion (IM3) component included in the first amplified signal, based on the second bias current.
    Type: Application
    Filed: September 28, 2018
    Publication date: June 27, 2019
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventor: Kyu Jin CHOI
  • Publication number: 20190199301
    Abstract: A power amplifying apparatus includes a first bias circuit that generates a first bias current having a first magnitude, a first amplification circuit connected between a first node and a second node, and that receives the first bias current, amplifies a signal input through the first node, and outputs a first amplified signal to the second node, a second bias circuit that generates a second bias current having a second magnitude that is different from the first magnitude of the first bias current, and a second amplification circuit connected in parallel with the first amplification circuit between the first node and the second node, and that receives the second bias current, amplifies the signal input through the first node, and outputs a second amplified signal to the second node, wherein the second amplification circuit may have a size that is different from a size of the first amplification circuit.
    Type: Application
    Filed: October 16, 2018
    Publication date: June 27, 2019
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Jae Hyouck CHOI