Abstract: A RF (Radio Frequency) switch may include: a common port; a first switching unit including a plurality of first switching devices; a second switching; a negative voltage generating unit sensing the high frequency signal from the common port and rectifying the sensed high frequency signal to generate a negative voltage; and a logic circuit unit controlling switching operations of the first and second switching units using the negative voltage provided from the negative voltage generating unit and a positive voltage provided from the outside.

Abstract: There are provided an on-chip inductor, and a method for manufacturing the same. The on-chip inductor may include: a substrate; an oxide layer formed on the substrate; a spiral-shaped wiring layer formed on the oxide layer; and a shielding layer having a lattice shape interposed between the substrate and the wiring layer.

Abstract: A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.

Abstract: A radio frequency switching circuit may include: a first switching circuit unit connected between a first signal port for transmitting and receiving signals and a common connection node connected to an antenna port and operated by a first gate signal; a second switching circuit unit connected between a second signal port for transmitting and receiving the signals and the common connection node and operated by a second gate signal; a signal selecting unit selecting a signal having a higher voltage between the first and second gate signals and providing the selected signal as a reference voltage; and a voltage generating unit generating a common node voltage using the reference voltage and providing the generated common node voltage to the common connection node, the common node voltage being lower than the reference voltage and being higher than a voltage level of zero.

Abstract: A RF (Radio Frequency) switch may include: a common port; a first switching unit including a plurality of first switching devices; a second switching; a negative voltage generating unit sensing the high frequency signal from the common port and rectifying the sensed high frequency signal to generate a negative voltage; and a logic circuit unit controlling switching operations of the first and second switching units using the negative voltage provided from the negative voltage generating unit and a positive voltage provided from the outside.

Abstract: A power amplifying apparatus may include a first amplifying unit receiving power and amplifying a high frequency signal, a second amplifying unit receiving the power and amplifying the high frequency signal from the first amplifying unit, and a control unit controlling an operation of the first amplifying unit or the second amplifying unit. The first amplifying unit and the control unit are disposed on a complementary metal oxide semiconductor (CMOS) substrate, and the second amplifying unit is disposed on a GaAs substrate.

Abstract: A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.

Abstract: A switching circuit may include a switching circuit unit; a reference voltage unit connected between the switching circuit unit and a signal input terminal and providing a preset reference voltage; and a voltage generating unit dividing a first control voltage provided to the switching circuit unit by a preset magnitude to generate a second control voltage corresponding to the reference voltage, and providing the second control voltage to bodies of the plurality of respective switching devices.

Abstract: A power amplifier may include a first amplifying unit receiving a first bias signal to amplify a power level of an input signal; an envelope detecting unit detecting an envelope of the input signal; a comparing circuit unit comparing a peak value of the detected envelope with a preset reference voltage; and a second amplifying unit amplifying the power level of the input signal according to a second bias signal set depending on a comparison result of the comparing circuit unit.

Abstract: The present disclosure provides a composition for radiation exposure diagnosis including an agent for measuring an expression level of an insulin-like growth factor-binding protein-5 (IGFBP-5) gene at an mRNA or the protein and a kit for radiation exposure diagnosis. Methods of diagnosing radiation exposure as well as methods for screening an agent for enhancing radiation sensitivity or for radiation protection are disclosed. Also provided are compositions for enhancing radiation sensitivity and/or radiation protection.

Abstract: A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

Abstract: Provided is a back light unit. The back light unit includes a light guide plate having a light guide pattern part; at least one light emitting unit provided at a sidewall of the light guide plate, and irradiating light to the light guide plate; a keypad positioned over the light guide plate, and comprising a resin layer, a base resin layer, a character opening part having a character shape, a key assembly provided at one side, and a key adherence film provided on an upper surface of the base resin layer; and a printed circuit board comprising a metal dome switch positioned under a lower surface of the light guide plate.

Abstract: A substrate processing apparatus, which is designed to prevent the wobbling of a rotational shaft rotating, is provided. The substrate includes a rotation shaft and a connecting member. A unit is disposed between the rotational shaft and the connecting member to make the rotational shaft and the connecting member close-contact each other or a unit is disposed under the rotational shaft to prevent the wobbling of the rotational shaft.

Abstract: A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

Abstract: Provided is a back light unit. The back light unit includes a light guide plate having a light guide pattern part; at least one light emitting unit provided at a sidewall of the light guide plate, and irradiating light to the light guide plate; a keypad positioned over the light guide plate, and comprising a resin layer, a base resin layer, a character opening part having a character shape, a key assembly provided at one side, and a key adherence film provided on an upper surface of the base resin layer; and a printed circuit board comprising a metal dome switch positioned under a lower surface of the light guide plate.

Abstract: A pre-cleaning method of a substrate for a semiconductor device includes preparing a chamber, the chamber including a plasma electrode at an outside of the chamber, a power supplying system connected to the plasma electrode, a susceptor in the chamber, and an injector injecting gases into the chamber, equipping a metallic net in the chamber, the metallic net over the susceptor and grounded, disposing a substrate on the susceptor, and injecting a hydrogen gas into the chamber through the injector and supplying radio frequency power to the plasma electrode, thereby removing an oxide layer on the substrate.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Abstract: Disclosed herein is a method for forming a silicon epitaxial layer. The method comprises the steps of cleaning the surface of a silicon substrate having dopant of predetermined concentration doped therein with mixed plasma comprising an etching gas containing fluorine and hydrogen or deuterium, and forming a silicon epitaxial layer on the cleaned surface of the silicon substrate. The doped concentration of the silicon substrate is preferably 1018 to 1021 atoms/cm3. According to the present invention, a new preliminary cleaning step is adopted, whereby a silicon epitaxial layer of good quality is formed on a highly doped silicon substrate at a low temperature of 700° C. or less.

Abstract: A pre-cleaning method of a substrate for a semiconductor device includes preparing a chamber, the chamber including a plasma electrode at an outside of the chamber, a power supplying system connected to the plasma electrode, a susceptor in the chamber, and an injector injecting gases into the chamber, equipping a metallic net in the chamber, the metallic net over the susceptor and grounded, disposing a substrate on the susceptor, and injecting a hydrogen gas into the chamber through the injector and supplying radio frequency power to the plasma electrode, thereby removing an oxide layer on the substrate.