Abstract: A pre-cleaning method of a substrate for a semiconductor device includes preparing a chamber, the chamber including a plasma electrode at an outside of the chamber, a power supplying system connected to the plasma electrode, a susceptor in the chamber, and an injector injecting gases into the chamber, equipping a metallic net in the chamber, the metallic net over the susceptor and grounded, disposing a substrate on the susceptor, and injecting a hydrogen gas into the chamber through the injector and supplying radio frequency power to the plasma electrode, thereby removing an oxide layer on the substrate.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.