Abstract: A semiconductor package may include a semiconductor package first side, an embedded bridge interconnect, a first via, and a second via. The bridge interconnect may include a bridge interconnect first side with a conductive pad and a bridge interconnect second side. The distance between the bridge interconnect first side and the semiconductor package first side may be less than a distance between the bridge interconnect second side and the semiconductor package first side. The first and second vias may each include a first end that is narrower than s second end. The semiconductor package first side may be closer to the first end of the first via than the second end of the first via, and closer to the second end of the second via than the first end of the second via. The first side of the semiconductor package may be configured to electrically couple to a die.

Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.

Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

Abstract: Apparatuses, systems and methods associated with a substrate assembly with an encapsulated magnetic feature for an inductor are disclosed herein. In embodiments, a substrate assembly may include a base substrate, a magnetic feature encapsulated within the base substrate, and a coil, wherein a portion of the coil extends through the magnetic feature. Other embodiments may be described and/or claimed.

Abstract: Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.

Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

Abstract: A substrate for an electronic device may include a core. The substrate may include a passive electronic component. For instance, the substrate may include a continuous layer of molding material encapsulating the passive electronic component within the core. One or more through vias may extend between a first surface of the core and a second surface of the core. The substrate may include one or more layers coupled with the core. One or more component terminals may facilitate electrical communication between the passive electronic component and one or more of the first layer or the second layer.

Abstract: Embodiments include an electronic package that includes a first layer that comprises a dielectric material and a second layer over the first layer, where the second layer comprises a magnetic material. In an embodiment, a third layer is formed over the second layer, where the third layer comprises a dielectric material. In an embodiment, the third layer entirely covers a first surface of the second layer. In an embodiment a first conductive layer and a second conductive layer are embedded within the second layer. In an embodiment, sidewalls of the first conductive layer and the second conductive layer are substantially vertical.

Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.

Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.

Abstract: Described herein are magnetic core inductors (MCI) and methods for manufacturing magnetic core inductors. A first embodiment of the MCI can be a snake-configuration MCI. The snake-configuration MCI can be formed by creating an opening in a base material, such as copper, and providing a nonconductive magnetic material in the opening. The inductor can be further formed by forming plated through holes into the core material. The conductive elements for the inductor can be formed in the plated through holes. The nonconductive magnetic material surrounds each conductive element and plated through hole. In embodiments, a layered coil inductor can be formed by drilling a laminate to form a cavity through the laminate within the metal rings of the layered coil inductor. The nonconductive magnetic material can be provided in the cavity.

Abstract: Transmission pathways in substrates, and associated methods are shown. Example transmission pathways include a semiconductor substrate with a core, a dielectric layer fixed on the core, at least one first electrical transmission pathway extending through at least one of the dielectric layer and the core. The first pathway includes a magnetic material disposed within the at least the core of the at least one first electrical transmission pathway, at least one second electrical transmission pathway extending through the magnetic material, a nickel layer disposed on inner circumferential surface of the magnetic material at least within the second electrical transmission pathway, a copper layer disposed on at least the nickel layer within the second electrical transmission pathway. The dielectric spacer or the nickel layer separates the copper layer from the magnetic material.

Abstract: A substrate for an integrated circuit package, the substrate comprising a dielectric, at least one conductor plane within the dielectric, and a planar magnetic structure comprising an organic magnetic laminate embedded within the dielectric, wherein the planar magnetic structure is integrated within the at least one conductor plane.

Abstract: Embodiments include semiconductor packages. A semiconductor package includes a plurality of build-up layers and a plurality of conductive layers in the build-up layers. The conductive layers include a first conductive layer and a second conductive layer. The first conductive layer is over the second conductive layer and build-up layers, where a first via couples the first and second conductive layers. The semiconductor package also includes a thin film capacitor (TFC) in the build-up layers, where a second via couples the TFC to the first conductive layer, and the second via has a thickness less than a thickness of the first via. The first conductive layer may be first level interconnects. The build-up layers may be dielectrics. The TFC may include a first electrode, a second electrode, and a dielectric. The first electrode may be over the second electrode, and the dielectric may be between the first and second electrodes.

Abstract: Disclosed herein are cavity structures in integrated circuit (IC) package supports, as well as related methods and apparatuses. For example, in some embodiments, an IC package support may include: a cavity in a dielectric material, wherein the cavity has a bottom and sidewalls; conductive contacts at the bottom of the cavity, wherein the conductive contacts include a first material; a first peripheral material outside the cavity, wherein the first peripheral material is at the sidewalls of the cavity and proximate to the bottom of the cavity, and the first peripheral material includes the first material; and a second peripheral material outside the cavity, wherein the second peripheral material is at the sidewalls of the cavity and on the first peripheral material, and the second peripheral material is different than the first peripheral material.

Abstract: Techniques and mechanisms for providing structures of a magnetic material based inductor. In an embodiment, an inductor comprises a body of a magnetic material, and a conductor which extends along a surface of the body. The body comprises a carrier material and magnetic filler particles distributed in the carrier material. A passivation material of the inductor is provided adjacent to the conductor and to surfaces of the filler particles. The conductor and the passivation material comprise different respective material compositions, wherein the passivation material comprises one of nickel, tin, copper, palladium, or gold. In another embodiment, the inductor is one of a plated through hole inductor type of a planar inductor type.

Abstract: Microelectronic assemblies that include a cooling channel, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface, a die having a surface, and a fluidic channel between the surface of the die and the surface of the package substrate, wherein a top surface of the fluidic channel is defined by the surface of the die and a bottom surface of the fluidic channel is defined by the surface of the package substrate. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a surface; and an interposer having a fluidic channel between the surface of the die and the surface of the package substrate.

Abstract: Embodiments include an inductor that comprises an inductor trace and a magnetic body surrounding the inductor trace. In an embodiment, the magnetic body comprises a first step surface and a second step surface. Additional embodiments include an inductor that includes a barrier layer. In an embodiment, an inductor trace is formed over a first surface of the barrier layer. Embodiments include a first magnetic body over the inductor trace and the first surface of the barrier layer, and a second magnetic body over a second surface of the barrier layer opposite the first surface. In an embodiment, a width of the second magnetic body is greater than a width of the first magnetic body.

Abstract: An integrated circuit (IC) package comprises a substrate comprising a dielectric and a thermal conduit that is embedded within the dielectric. The thermal conduit has a length that extends laterally within the dielectric from a first end to a second end. An IC die is thermally coupled to the first end of the thermal conduit. The IC die comprises an interconnect that is coupled to the first end of the thermal conduit. An integrated heat spreader comprises a lid over the IC die and at least one sidewall extending from the edge of the lid to the substrate that is thermally coupled to the second end of the thermal conduit.

Abstract: Apparatuses, systems and methods associated with a substrate assembly with an encapsulated magnetic feature for an inductor are disclosed herein. In embodiments, a substrate assembly may include a base substrate, a magnetic feature encapsulated within the base substrate, and a coil, wherein a portion of the coil extends through the magnetic feature. Other embodiments may be described and/or claimed.