Abstract: A method of making a substantially facet-free epitaxial film is disclosed. A substrate having predetermined regions is first provided. An epitaxial film forming process gas and a carrier gas are introduced into a reactor chamber. The epitaxial film forming process gas and the carrier have a flow ratio between 1:1 and 1:200. The epitaxial film is deposited into the predetermined regions of the substrate wherein the substrate has a temperature between about 350° C. and about 900° C. when the epitaxial film is being deposited.

Abstract: A method of treating a silicon surface of a substrate that includes heating the substrate in a process chamber to a temperature, exposing a first area adjacent to the silicon surface to a first gas mixture comprising an etchant, a silicon source gas, and a carrier, exposing a second area adjacent to the silicon surface to a second gas mixture, wherein the second gas mixture is different from the first gas mixture.

Abstract: A method implemented by one or more processors, including receiving first information relating a plurality of flow rates of a species to corresponding concentrations of the species within films generated using the flow rates; receiving a desired concentration profile of the species within a desired film; and generating a plurality of process steps that, when performed, would form the desired film with the desired concentration profile by controlling the flow rate of the species based, in part, on the first information and the desired concentration profile, wherein a first concentration of the species at a first point in the desired concentration profile differs from a second concentration of the species at a second point in the desired concentration profile. A computer-readable medium, system and apparatus are also disclosed.

Abstract: A method of fabricating an ultra shallow junction of a field effect transistor is provided. The method includes the steps of etching a substrate near a gate structure to define a source region and a drain region of the transistor, forming a spacer/protective film having poor step coverage to protect frontal surfaces of the source and drain regions, laterally etching sidewalls of the regions beneath a gate dielectric to define a channel region, and removing the protective film.

Abstract: A method of treating a silicon surface of a substrate that includes heating the substrate in a process chamber to a temperature, exposing a first area adjacent to the silicon surface to a first gas mixture comprising an etchant, a silicon source gas, and a carrier, exposing a second area adjacent to the silicon surface to a second gas mixture, wherein the second gas mixture is different from the first gas mixture.

Abstract: A method is provided wherein a temperature reading error of a pyrometer is avoided. An upper pyrometer is used to detect infrared radiation from a test layer formed on a test substrate under standard processing conditions. The infrared radiation from the test layer has a period having a length which is indicative of growth rate of the layer. The period is generally inversely proportional to the growth rate. The growth rate is directly related to the temperature.

Abstract: A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000°-1300° C. While the substrate is heated to a temperature between 1000°-1300° C., the silicon surface is exposed to a gas mix comprising H2 and HCl in the chamber to smooth the silicon surface.

Abstract: Provided herein is a wafer carrier comprising a disk and a pocket, wherein the pocket is centered in the disk and holds a wafer. Also provided is a method of processing or testing a wafer for a semiconductor device, comprising the steps of placing the wafer in the wafer carrier disclosed herein; loading the wafer carrier in a loadlock chamber; and transferring the wafer carrier from the loadlock chamber to a process chamber for processing or testing.

Abstract: A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000°-1300° C. While the substrate is heated to a temperature between 1000°-1300° C., the silicon surface is exposed to a gas mix comprising H2 and HCl in the chamber to smooth the silicon surface.

Abstract: An apparatus that includes a reflector having a mirrored surface facing down, a glass structure located beneath the reflector, a susceptor within the glass structure having a surface facing up that is capable of holding a part to be processed, and one or more radiant heat sources directed at and located beneath the glass structure.

Abstract: A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000°-1300° C. While the substrate is heated to a temperature between 1000°-1300° C., the silicon surface is exposed to a gas mix comprising H2 and HCl in the chamber to smooth the silicon surface.

Abstract: A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included.

Abstract: A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included.

Abstract: A technique for impeding the formation of mechanical bonds between workpieces, such as semiconductor wafers, and a carrier or susceptor on which they are supported during a deposition or layer formation process, such as in epitaxial processing. In the formation of relatively thick films, greater than approximately 50 microns (50 .mu.m) thick, wafers can become mechanically bonded to the susceptor on which they are supported, and are subject to damage caused by thermal stresses during a cooldown phase of processing. In the disclosed method, the speed or direction of rotation of a rotatable susceptor is abruptly changed at least once, or periodically during processing. Slight movement of the wafers with respect to the susceptor during each rotation speed change or reversal tends to break any bonds before they can develop strength, and production yields of acceptable wafers are significantly improved.

Abstract: A process for the formation of an epitaxial layer on a semiconductor wafer is described which inhibits the formation of thermal stress in the semiconductor wafer such as a silicon wafer, during the formation of such an epitaxial layer thereon. In one aspect, such thermal stress is inhibited during the deposition of the epitaxial material by initially reducing the deposition rate to less than 1 .mu.m per minute or lower until the epitaxial layer reaches a thickness of from about 2 to about 30 .mu.m. In another aspect of the invention, any bridge materials formed between the wafer and the wafer support, during formation of the epitaxial layer, is removed before the wafer is cooled, i.e., before such bridge materials can induce thermal stress in the wafer during the cooling of the wafer, by post etching the wafer with HCl etching gas after the epitaxial deposition.