Patents by Inventor Leonard Forbes

Leonard Forbes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200105822
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.
    Type: Application
    Filed: November 18, 2019
    Publication date: April 2, 2020
    Inventors: Homayoon HADDAD, Jeffrey MCKEE, Jutao JIANG, Drake MILLER, Chintamani PALSULE, Leonard FORBES
  • Patent number: 10484855
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: November 19, 2019
    Assignee: SiOnyx, LLC
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
  • Publication number: 20190289451
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.
    Type: Application
    Filed: April 23, 2019
    Publication date: September 19, 2019
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
  • Patent number: 10361232
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: July 23, 2019
    Assignee: SiOnyx, LLC
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Chintamani Palsule, Leonard Forbes
  • Patent number: 10269861
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: April 23, 2019
    Assignee: SiOnyx, LLC
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
  • Patent number: 10229922
    Abstract: A first conductive region having a second conductivity type is formed in a first semiconductor over a first dielectric isolation region and having a first conductivity type. A second semiconductor having the first conductivity type is formed over the first conductive region and the first semiconductor. Isolation structures are formed extending through the second semiconductor and the first semiconductor to the first dielectric isolation region, thereby defining a first well of the second semiconductor contained within the isolation structures and a second well of the first conductive region contained within the isolation structures. A charge-storage node is formed over the first well. Source/drain regions having the second conductivity type are formed in the first well adjacent the charge-storage node. A control gate is formed over the charge-storage node. A first contact is formed to the first well. A second contact is formed to the second well through the first well.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: March 12, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Badih El-Kareh, Leonard Forbes
  • Patent number: 10217889
    Abstract: An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: February 26, 2019
    Assignee: LadarSystems, Inc.
    Inventors: Vinit Dhulla, Drake Miller, Leonard Forbes
  • Publication number: 20180216928
    Abstract: Stacked imager devices that can determine distance and generate three dimensional representations of a subject and associated methods are provided. In one aspect, an imaging system can include a first imager array having a first light incident surface and a second imager array having a second light incident surface. The second imager array can be coupled to the first imager array at a surface that is opposite the first light incident surface, with the second light incident surface being oriented toward the first imager array and at least substantially uniformly spaced. The system can also include a system lens positioned to direct incident light along an optical pathway onto the first light incident surface. The first imager array is operable to detect a first portion of the light passing along the optical pathway and to pass through a second portion of the light, where the second imager array is operable to detect at least a part of the second portion of light.
    Type: Application
    Filed: March 28, 2018
    Publication date: August 2, 2018
    Inventors: Homayoon Haddad, Chen Feng, Leonard Forbes
  • Patent number: 10020338
    Abstract: A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: July 10, 2018
    Assignee: INTELLECTUAL VENTURES II LLC
    Inventors: Jaroslav Hynecek, Leonard Forbes, Homayoon Haddad, Thomas Joy
  • Publication number: 20180175093
    Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.
    Type: Application
    Filed: February 16, 2018
    Publication date: June 21, 2018
    Inventors: Homayoon Haddad, Jutao Jiang, Jeffrey McKee, Drake Miller, Leonard Forbes, Chintamani Palsule
  • Patent number: 9939251
    Abstract: Stacked imager devices that can determine distance and generate three dimensional representations of a subject and associated methods are provided. In one aspect, an imaging system can include a first imager array having a first light incident surface and a second imager array having a second light incident surface. The second imager array can be coupled to the first imager array at a surface that is opposite the first light incident surface, with the second light incident surface being oriented toward the first imager array and at least substantially uniformly spaced. The system can also include a system lens positioned to direct incident light along an optical pathway onto the first light incident surface. The first imager array is operable to detect a first portion of the light passing along the optical pathway and to pass through a second portion of the light, where the second imager array is operable to detect at least a part of the second portion of light.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: April 10, 2018
    Assignee: SiOnyx, LLC
    Inventors: Homayoon Haddad, Chen Feng, Leonard Forbes
  • Patent number: 9929229
    Abstract: Various embodiments includes a stacked open pattern inductor fabricated above a semiconductor substrate. The stacked open pattern inductor includes a plurality of parallel open conducting patterns embedded in a magnetic oxide or in an insulator and a magnetic material. A layer of magnetic material may be located above the inductor and below the inductor to confine electronic noise generated in the stacked open pattern inductor to the area occupied by the inductor. The stacked open pattern inductor may include a magnetic material directly contacts one of the conducting patterns and the substrate. The stacked open pattern inductor may be fabricated using conventional integrated circuit manufacturing processes, and the inductor may be used in connection with computer systems.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: March 27, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Kie Y. Ahn, Leonard Forbes
  • Patent number: 9911781
    Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: March 6, 2018
    Assignee: SiOnyx, LLC
    Inventors: Homayoon Haddad, Jutao Jiang, Jeffrey McKee, Drake Miller, Leonard Forbes, Chintamani Palsule
  • Patent number: 9893072
    Abstract: One aspect of the present subject matter relates to a memory. A memory embodiment includes a nanofin transistor having a first source/drain region, a second source/drain region above the first source/drain region, and a vertically-oriented channel region between the first and second source/drain regions. The nanofin transistor also has a surrounding gate insulator around the nanofin structure and a surrounding gate surrounding the channel region and separated from the nanofin channel by the surrounding gate insulator. The memory includes a data-bit line connected to the first source/drain region, at least one word line connected to the surrounding gate of the nanofin transistor, and a stacked capacitor above the nanofin transistor and connected between the second source/drain region and a reference potential. Other aspects are provided herein.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: February 13, 2018
    Assignee: Micron Technology, Inc.
    Inventor: Leonard Forbes
  • Publication number: 20170309669
    Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.
    Type: Application
    Filed: March 24, 2014
    Publication date: October 26, 2017
    Applicant: SiOnyx, Inc.
    Inventors: Homayoon Haddad, Jutao Jiang, Jeffrey McKee, Drake Miller, Leonard Forbes, Chintamani Palsule
  • Publication number: 20170271391
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation to passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
    Type: Application
    Filed: June 5, 2017
    Publication date: September 21, 2017
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Chintamani Palsule, Leonard Forbes
  • Publication number: 20170263671
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 14, 2017
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
  • Patent number: 9673243
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: June 6, 2017
    Assignee: SiOnyx, LLC
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
  • Patent number: 9666636
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: May 30, 2017
    Assignee: SiOnyx, LLC
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
  • Patent number: 9583334
    Abstract: Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film may be formed using atomic layer deposition.
    Type: Grant
    Filed: September 3, 2015
    Date of Patent: February 28, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Kie Y. Ahn, Leonard Forbes