Abstract: A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.

Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first semiconductor layer, an insulating layer and a second semiconductor layer in a substrate. The method also includes forming a first isolation feature in the first semiconductor layer, the insulating layer and the second semiconductor layer. The method further includes forming a transistor in and over the substrate adjacent to the first isolation feature. In addition, the method includes etching the first isolation feature to form a trench extending below the insulating layer. The method also includes filling the trench with a metal material to form a second isolation feature in the first isolation feature.

Abstract: A package structure includes a die, a TIV, a first encapsulant, a RDL structure, a thermal dissipation structure and a second encapsulant. The die has a first surface and a second surface opposite to each other. The TIV is laterally aside the die. The first encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The RDL structure is disposed on the first surface of the die and on the first encapsulant, electrically connected to the die and the TIV. The thermal dissipation structure is disposed over the second surface of die and electrically connected to the die through the TIV and the RDL structure. The second encapsulant encapsulates sidewalls of the thermal dissipation structure.

Abstract: A semiconductor package includes a semiconductor device including a first UBM structure, wherein the first UBM structure includes multiple first conductive strips, the first conductive strips extending in a first direction, multiple second conductive strips separated from and interleaved with the multiple first conductive strips, the second conductive strips extending in the first direction, wherein the multiple first conductive strips are offset in the first direction from the multiple second conductive strips by a first offset distance, and a substrate including a second UBM structure, the second UBM structure including multiple third conductive strips, each one of the multiple third conductive strips bonded to one of the multiple first conductive strips or one of the multiple second conductive strips.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a MIM dual capacitor structure with an increased capacitance per unit area in a semiconductor structure. Without using additional mask layers, a second parallel plate capacitor can be formed over a first parallel plate capacitor, and both capacitors share a common capacitor plate. The two parallel plate capacitors can be connected in parallel to increase the capacitance per unit area.

Abstract: The present disclosure discloses a capacitive touch panel, including a substrate, wherein a first surface of the substrate includes a first region and a second region, and a second surface of the substrate includes a third region and a fourth region. A first group of drive lines is formed in the first region, a first group of sense lines is formed in the second region, a second group of the drive lines is formed in the third region, and a second group of the sense lines is formed in the fourth region. Each of the drive lines of the first group and the second group extends along a first direction from a periphery of the substrate to a middle of the substrate, with an end of said each drive line on the periphery of the substrate being connected to a drive chip.

Abstract: Systems, methods, and apparatus provide artificial knees. Artificial knees include a thigh link configured to move in unison with a thigh of the person, a shank link configured to be rotatably coupled to said thigh link, and a compression spring rotatably coupled to the thigh link and coupled to a second end of shank link with a second end of the compression spring. During a first range of motion, the compression spring is configured to provide an extension torque between the thigh link and the shank link causing said artificial knee to resist flexion. After said first range of motion, the compression spring is configured to provide a flexion torque between the thigh link and the shank link encouraging said artificial knee to flex resulting in toe clearance during the swing phase. During the swing phase, the compression spring provides no torque between the thigh link and the shank link.

Abstract: Radio frequency antennas sharing a ground plane are largely decoupled using one or more lumped capacitive elements set into holes within the ground plane. The holes, which are precisely placed, can extend to a side of the ground plane. A stub extends from a fringe of the hole either straight or bending in an L shape, and a capacitor connects between an end of the stub and another side of the hole. Capacitive elements can also be supported on raised solder pads above a ground plane or off to one side of the ground plane. Methods for manufacturing the decoupling apparatus are described.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate. The substrate includes a first semiconductor layer, a second semiconductor layer, and an insulating layer between the first semiconductor layer and the second semiconductor layer. The semiconductor device structure also includes a gate stack over the substrate. The semiconductor device structure further includes source and drain structures in the second semiconductor layer of the substrate. The source and drain structures are on opposite sides of the gate stack. In addition, the semiconductor device structure includes a first isolation feature in the substrate. The first isolation feature includes an insulation material and surrounds the source and drain structures. The semiconductor device structure also includes a second isolation feature in the first isolation feature. The second isolation feature includes a metal material and surrounds the source and drain structures.

Abstract: The present disclosure discloses a capacitive touch panel having two surfaces, each surface at least including a region with drive lines formed therein and a region with sense lines formed therein, wherein the regions on the two surfaces correspondingly coincide in a direction perpendicular to the surfaces. The multiple drive lines extend along a first direction, while the multiple sense lines extend along a second direction perpendicular to the first direction. An end of each drive line on the periphery of the substrate is connected to a drive chip, with the other end thereof left floating; an end of each sense line on the periphery of the substrate is connected to a sense chip, with the other end thereof left floating. The present disclosure substantially shortens the length of the drive/sense lines and the resistance.

Abstract: A microwave separated field reconstructed device includes: a microwave field reconstructed cavity, a first short circuit plane, a third waveguide flange and coupling windows, wherein connection ports are provided on four ends of the microwave field reconstructed cavity; the microwave field reconstructed cavity is provided with a first waveguide flange, and a second waveguide flange is provided one end of the microwave field reconstructed cavity perpendicular to the first waveguide flange; the first short circuit plane is connected to one end of the first waveguide flange away from the microwave field reconstructed cavity; a second short circuit plane is connected to one end of the second waveguide flange away from the microwave field reconstructed cavity. The input ports are distributed at two ends of the microwave field reconstructed cavity to introduce electric and magnetic fields.

Abstract: A system and method for forming fluted polymer boards and recycling scrap material. A feeder feeds polymer to an extruder, which extrudes fluted board stock from the polymer. A scrap portion of the board stock is separated from another portion that comes to form the boards. The recycling system returns the separated scrap portion along a return path to the feeder and forms holes in the scrap portion creating fluid communication between the flutes and atmosphere before the scrap portion is returned to the feeder. The scrap portion can, in some embodiments, be ground into granular form after being hole-punched without creating a pressure condition in the flutes that adversely affects extrusion of the board stock.

Abstract: The present invention relates to an in vitro immune synapse system and a method of in vitro evaluating immune response using the same. The in vitro immune synapse system includes antigen-presenting cells (APCs) and at least one cell type of several specific T cell subtypes isolated from peripheral blood mononuclear cells (PBMCs), all of which is from a same individual of pigs. When a test sample is co-cultured in the in vitro immune synapse system for a given period, it can be determined that the test sample is immunogenic, immunostimulatory or not according to the immunization-related changes of these cells, thereby potentially replacing some kinds of animal experimentation.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a MIM dual capacitor structure with an increased capacitance per unit area in a semiconductor structure. Without using additional mask layers, a second parallel plate capacitor can be formed over a first parallel plate capacitor, and both capacitors share a common capacitor plate. The two parallel plate capacitors can be connected in parallel to increase the capacitance per unit area.

Abstract: A semiconductor package includes a semiconductor device including a first UBM structure, wherein the first UBM structure includes multiple first conductive strips, the first conductive strips extending in a first direction, multiple second conductive strips separated from and interleaved with the multiple first conductive strips, the second conductive strips extending in the first direction, wherein the multiple first conductive strips are offset in the first direction from the multiple second conductive strips by a first offset distance, and a substrate including a second UBM structure, the second UBM structure including multiple third conductive strips, each one of the multiple third conductive strips bonded to one of the multiple first conductive strips or one of the multiple second conductive strips.

Abstract: A disc-type speed regulation magnetic coupler based on bevel gear drive is provided, consisting of a driving disc assembly and a driven disc assembly, wherein a speed regulation device is mounted on the driving disc assembly.

Abstract: The present invention generally relates to system test, and more specifically, related to online system test. In an aspect, a computer-implemented method for online system test is provided. In this method, a test rule for testing the online system is obtained. And a test result from a real user action of the online system based on the test rule will be retrieved. And a test report is generated at least based on the test result from the real user action.

Abstract: An electronic lock includes a lock mechanism operable to change a state thereof between a lock state and an unlock state, and an electric control device including a motor module and a controller. The motor module is electrically operable to perform a lock operation or an unlock operation on the lock mechanism. The controller is configured to, when the lock mechanism changes the state thereof, determine whether a driving current provided to drive operation of the motor module satisfies a predetermined current condition. The controller stops driving operation of the motor module after determining at least that the driving current satisfies the predetermined current condition.

Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.