Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a MIM dual capacitor structure with an increased capacitance per unit area in a semiconductor structure. Without using additional mask layers, a second parallel plate capacitor can be formed over a first parallel plate capacitor, and both capacitors share a common capacitor plate. The two parallel plate capacitors can be connected in parallel to increase the capacitance per unit area.

Abstract: A head mounted display device and a power management method are provided. The head mounted display device includes a host device and a power input device. The power input device is detachably connected to a power device and an electronic device. The power input device generates a first input signal according to a supply voltage value of the power device, and generates a second input signal according to power supply information of the electronic device. The host device enters a power saving mode or performs a boot-up operation according to the first input signal and the second input signal.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first semiconductor layer, an insulating layer and a second semiconductor layer in a substrate. The method also includes forming a first isolation feature in the first semiconductor layer, the insulating layer and the second semiconductor layer. The method further includes forming a transistor in and over the substrate adjacent to the first isolation feature. In addition, the method includes etching the first isolation feature to form a trench extending below the insulating layer. The method also includes filling the trench with a metal material to form a second isolation feature in the first isolation feature.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: Some embodiments include bacterial species for use in treatment of social behavioral deficit symptoms in a subject in need thereof. The bacterial species can include Enterococcus faecalis. Upon treatment, one or more symptoms of behavioral deficit can be improved in the subject.

Abstract: Systems, methods, and apparatus provide artificial knees. Artificial knees include a thigh link configured to move in unison with a thigh of the person, a shank link configured to be rotatably coupled to the thigh link, and a compression spring rotatably coupled to the thigh link and coupled to a second end of shank link with a second end of the compression spring. During a first range of motion, the compression spring is configured to provide an extension torque between the thigh link and the shank link causing the artificial knee to resist flexion. After the first range of motion, the compression spring is configured to provide a flexion torque between the thigh link and the shank link encouraging the artificial knee to flex resulting in toe clearance during the swing phase. During the swing phase, the compression spring provides no torque between the thigh link and the shank link.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A head mounted display device and a power management method are provided. The head mounted display device includes a host part and a power input part. The power input part is detachably connected to a power device and an electronic device. The power input part generates a first input signal according to a supply voltage value of the power device, and generates a second input signal according to power supply information of the electronic device. The host part enters a power saving mode or performs a boot-up operation according to the first input signal and the second input signal.

Abstract: An angle-adjustable supporting mechanism that includes a knob-type locking mechanism and a rotatable holder is provided. The knob-type locking mechanism has a base, a knob, and a latch member. The base has a receiving space and a supporting portion. The knob is rotatably received in the receiving space. The latch member is movably received in the supporting portion in a linear direction. The latch member has a bolt, a first stressed part, and a second stressed part. The bolt is disposed at one side of the first stressed part. The first stressed part is disposed between the bolt and the second stressed part. When the knob is rotated in different directions, the bolt of the latch member is drove to lock or release.

Abstract: Exemplary semiconductor chamber component cleaning systems may include a receptacle. The receptacle may include a bottom lid that may be an annulus. The annulus may be characterized by an inner annular wall and an outer annular wall. A plurality of recessed annular ledges may be defined between the inner annular wall and the outer annular wall. Each recessed annular ledge of the plurality of recessed annular ledges may be formed at a different radial position along the bottom lid. The cleaning systems may include a top lid removably coupled with the bottom lid about an exterior region of the top lid. The cleaning systems may include a tank defining a volume to receive the receptacle.

Abstract: This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes. In one embodiment, the incident angle of the long-wavelength focused X-ray is ?24°, and the sample area is ?25 ?m×25 ?m.

Abstract: Devices and systems for droplet generation and methods for generating droplets are described. In an embodiment, the devices and systems include a capillary configured to eject a droplet, such as in response to a voltage applied to an end of the capillary. In an embodiment, the devices and systems include a moveable stage configured to carry a multi-well plate and move the stage relative to the capillary such that the ejected droplet is selectively received by a well of the multi-well plate carried by the moveable stage.

Abstract: The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.

Abstract: A cubic cyclodextrin framework-RGD composition (RGD-COF) and a preparation method therefor. Specifically, the cyclodextrin framework-RGD composition contains a cyclodextrin framework (COF) having a cubic structure and RGD, and can escape from phagocytosis and clearance of macrophages, enhance migration and adhesiveness to damaged blood vessels, and efficiently target and aggregate activated platelets at damaged blood vessel sites, having application prospects on targeted diagnosis and treatment of diseases associated with uncontrolled hemorrhage, atherosclerosis and cerebral apoplexy. By utilizing the advantage that a cyclodextrin-metal organic framework (CD-MOF) has controllable dimensions, a cubic cyclodextrin framework-RGD composition for nanoscale intravenous injection or microscale topically external use is provided.

Abstract: A bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on a surface of the support substrate, and the SiC layer is bonded onto the bonding layer, in which a carbon surface of the SiC layer is in direct contact with the bonding layer. The SiC layer has a basal plane dislocation (BPD) of 1,000 ea/cm2 to 20,000 ea/cm2, a total thickness variation (TTV) greater than that of the support substrate, and a diameter equal to or less than that of the support substrate. The bonding wafer structure has a TTV of less than 10 ?m, a bow of less than 30 ?m, and a warp of less than 60 ?m.

Abstract: Provided is a wide angle application high reflective mirror having a reflection band partially overlapping in a wavelength range of 800-4000 nm. The mirror comprises a film system in which a plurality of high refractive index film layers and a plurality of low refractive index film layers that are alternately stacked, and the material of the high refractive index film layer is one of SiH, SiOxHy, or SiOxNy, or a mixture thereof. The highly reflective mirror can achieve a reflectance greater than 99% with an incident angle ranging from 0 to 60 degrees over a large angle range.

Abstract: The present invention generally relates to system test, and more specifically, related to online system test. In an aspect, a computer-implemented method for online system test is provided. In this method, a test rule for testing the online system is obtained. And a test result from a real user action of the online system based on the test rule will be retrieved. And a test report is generated at least based on the test result from the real user action.

Abstract: A dual-mode dielectric resonator using two dissimilar modes is described, the dissimilar modes supported by a ridge waveguide resonator and a ¼-wavelength (¼?) metalized cylindrical resonator within a single, metal-coated dielectric block. Each ridge waveguide resonator and cylindrical resonator form a dual-mode resonator pair. Coupling control posts set between the ridge waveguide resonator and cylindrical resonator can adjust their coupling. Multiple pairs of ridge waveguide/cylindrical resonators are fabricated in the same dielectric block to form a coupled resonator bandpass filter, including an 8-pole or 10-pole dielectric resonator filter, for 5G or other applications. Transmission zeros can be introduced by a metalized blind hole extending vertically between two ridge waveguide resonators or a microstrip extending between two dual-mode resonator pairs between which there exists no partial-width or full-width dielectric window.

Abstract: A single-ended output circulator includes a three-core optical fiber head having first, second, and third optical fiber cores; a walk-off crystal having a first surface facing towards the second end of the three-core optical fiber head tube and a second surface facing away from the second end of the three-core optical fiber head tube; a plurality of half-wave plates each having a first surface coupled to the second surface of the walk-off crystal and a second surface facing away from the second surface of the walk-off crystal; a collimating lens having a first end and a second end; a reflection mirror configured to reflect light beams from the collimating lens; an optical prism between the collimating lens and the reflection mirror and configured to transmit a light beam along a propagation direction according to a polarization direction of the light beam; and a polarization rotator.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.