Abstract: A pressure sensor includes a diaphragm suspended across a cavity in a substrate. A first group of piezoresistors is provided in the diaphragm proximate a first outer edge of the diaphragm, the piezoresistors of the first group being coupled to one another to form a first Wheatstone bridge. A second group of piezoresistors is provided in the diaphragm proximate a second outer edge of the diaphragm, the piezoresistors of the second group being coupled to one another to form a second Wheatstone bridge. The first and second Wheatstone bridges exhibit mirror symmetry relative to one another. Output signals from each of the first and second Wheatstone bridges are processed at respective first and second differential amplifiers. The output signals from each of the first and second differential amplifiers are processed at a third differential amplifier to produce a pressure output signal with enhanced sensitivity and reduced impact from process variation.

Abstract: A method for preparing a multilayer-color composite material for use in dental department comprises: preparing multiple types of monochromatic composite material precursor powder different in color, carrying out dry-pressing and preforming on the precursor powder, so as to obtain a preformed green body; and then carrying out pressurization and heating processing on the preformed green body, so as to obtain a multilayer-color composite material that gradually changes in color from neck portions to incisal ends of teeth, so that the multilayer-color composite material has a higher similarity to the material of natural teeth.

Abstract: The present invention relates to a method for detection of air-water interface flux of organic contaminants, which passively and continuously collects contaminants at consecutive points close to a sea surface microlayer, acquires the freely dissolved concentration at the consecutive points of the air and water body close to a water body surface microlayer, and obtains the air-water interface flux of the contaminants through fitting a self-developed model, wherein the consecutive points include a plurality of sampling points along a height direction and a plurality of sampling points along a depth direction.

Abstract: A through substrate via (TSV) and method of forming the same are provided. The method of making the TSV may include etching a via opening into the backside of semiconductor substrate, the via opening exposing a surface of a metal landing structure. A conductive layer is deposited over the backside of semiconductor substrate, sidewalls of the via opening, and exposed surface of the metal landing structure. The conductive layer is coated with a polymer material, filling the via opening. The polymer material is developed to remove the polymer material from the backside of semiconductor substrate, leaving the via opening filled with undeveloped polymer material. A planar backside surface of semiconductor substrate is formed by removing the conductive layer.

Abstract: A MEMS inertial sensor, may include a movable sensitive element; and second substrate and a third substrate. The movable sensitive element may be formed by using a first substrate which may be formed of a monocrystalline semiconductor material. The first substrate may include a first surface and a second surface which are opposite to each other. One or more conductive layers may be formed on the first surface of the first substrate The second substrate may be coupled to a surface of the one or more conductive layer on the first substrate. The third substrate may be coupled to the second surface of the first substrate. The third substrate and the second substrate are respectively arranged on two opposite sides of the movable sensitive element.

Abstract: A method for selective etching using a dry film photoresist includes forming an opening through a substrate from a first surface to expose a stop layer at a second surface of the substrate. A material layer is formed over an inner surface of the opening and over the stop layer. The dry film photoresist is applied over the first surface of the substrate and over the opening. A second photoresist is applied on the dry film photoresist. First and second aligned holes are formed in the second photoresist and the dry film photoresist, respectively. The holes are approximately centered over the opening and are smaller in diameter than the opening so that a composite structure of the dry film photoresist and the second photoresist overhangs edges of the opening. The material layer is removed from the stop layer by etching via the first and second holes.

Abstract: A sensor for sensing an external magnetic field along a sensing direction comprises a sensor bridge. The sensor bridge has a first sensor leg that includes a first magnetoresistive sense element and a second sensor leg that includes a second magnetoresistive sense element. The first and second sense elements have respective first and second pinned layers having the same reference magnetization. The first and second sense elements have respective first and second sense layers, each self-biased to have a first sense magnetization. A permanent magnet layer is proximate the second sense element. In the absence of an external magnetic field, the permanent magnet layer magnetically biases the first sense magnetization of the second sense layer produce a second sense magnetization of the second sense layer that differs from the first sense magnetization, and the first sense layer of the first sense element retains the first sense magnetization.

Abstract: The present invention provides an ultrafiltration membrane comprising a sulfone polymer membrane matrix with pores and an organic polymer sealing layer, wherein the pores are filled with nanoadsorbents. The present invention further provides a method for preparing the ultrafiltration membrane, which includes the following steps: (1) synthesizing nanoadsorbents; (2) preparing the sulfone polymer membrane matrix by immersion-precipitation phase inversion; and (3) immobilizing nanoadsorbents in the pores of the sulfone polymer membrane matrix by reverse filling, then sealing the pores with organic polymers to form a multifunctional ultrafiltration membrane. In the present invention, colloidal gold, polyethylene glycol molecules and Pb(II) ions (and so forth) are utilized as models of viruses, macromolecular organic pollutants, and small molecular pollutants, respectively.

Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.

Abstract: A system includes three related structures. A first structure includes a first finger interposed between a first pair of sidewalls. The first finger has a first length and a first width, and is separated from each of the sidewalls by a first gap having a first spacing. A second structure includes a second finger interposed between a second pair of sidewalls. The second finger has a second length and the first width, and is separated from each of the sidewalls by a second gap having a second spacing. A third structure includes a third finger interposed between a third pair of sidewalls. The third finger has the second length and a second width, and is separated from each of the sidewalls by a third gap having a second spacing. Resistance and capacitance measurements of the three structures are used to extract critical parameters resulting from a semiconductor device fabrication process.

Abstract: A magnetic field sensor comprises a sensor bridge having multiple sensor legs. Each sensor leg includes magnetoresistive sense elements located in a plane of the magnetic field sensor. Each sense element comprises a pinned layer and a sense layer. The pinned layer has a reference magnetization oriented parallel to the plane and the sense layer has a sense magnetization oriented out-of-plane. A permanent magnet layer may be spaced apart from the sense elements which magnetically biases the sense magnetization of the sense layer into an out-of-plane direction that is non-perpendicular to the plane of the sensor. The sense magnetization is orientable from the out-of-plane direction toward the plane of the sensor in response to an external magnetic field. The permanent magnet layer enables detection of the external magnetic field in a sensing direction that is also perpendicular to the plane of the magnetic field sensor.

Abstract: A sensor package includes a magnetic field sensor and a corruption detection and reset subsystem. The magnetic field sensor has a magnetic sense element and a ferromagnetic structure characterized by a baseline magnetic state. The subsystem includes a detector element, a processor, and current carrying structure positioned in proximity to the ferromagnetic structure. Methodology performed by the subsystem entails detecting at the detector element an altered magnetic state of the ferromagnetic structure, where the altered magnetic state differs from the baseline magnetic state. Methodology further entails determining, at the processor, when a reset action is needed in response to the altered magnetic state and applying a reset magnetic field to the ferromagnetic structure to reset the ferromagnetic structure from the altered magnetic state to the baseline magnetic state.

Abstract: A magnetic field sensor comprises a sensor bridge having multiple sensor legs. Each sensor leg includes magnetoresistive sense elements, each comprising a pinned layer having a reference magnetization parallel to a plane of the sensor and a sense layer having a sense magnetization. A permanent magnet layer spaced apart from the sense elements magnetically biases the sense magnetization into an out-of-plane direction that is non-perpendicular to the plane of the sensor. The sense magnetization of a portion of the sense elements is oriented in a first direction and the sense magnetization of a different portion of the sense elements is oriented in a second direction differing from the first direction to generate two unique bias field vectors of the sense layers which enables detection of the external magnetic field in a sensing direction that is perpendicular to the plane of the magnetic field sensor without inter-axis coupling of sensor response.

Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.

Abstract: A system for programming integrated circuit (IC) dies formed on a wafer includes a magnetic field transmitter that outputs a digital test program as a magnetic signal. At least one digital magnetic sensor (e.g., Hall effect sensor) is formed with the IC dies on the wafer. The digital magnetic sensor detects and receives the magnetic signal. A processor formed on the wafer converts the magnetic signal to the digital test program and the digital test program is stored in memory on the wafer in association with one of the IC dies. The magnetic field transmitter does not physically contact the dies, but can flood an entire surface of the wafer with the magnetic signal so that all of the IC dies are concurrently programmed with the digital test program.

Abstract: A method of preparing a silicon-containing polymeric structure coated/encapsulated active ingredient is disclosed. The method has the steps of providing an insoluble active ingredient; dispersing the active ingredient in a liquid medium to form a suspension of the active ingredient; adding a silicon-containing polymeric structure precursor to the suspension; and reacting the precursor to form the silicon-containing polymeric structure. The silicon-containing polymeric structure is formed around the active ingredient, thereby forming a silicon-containing polymeric structure coated/encapsulated active ingredient. The silicon-containing polymeric structure coated/encapsulated active ingredient may be used in place of the active ingredient itself.

Abstract: A sensor for sensing an external magnetic field along a sensing direction comprises a sensor bridge. The sensor bridge has a first sensor leg that includes a first magnetoresistive sense element and a second sensor leg that includes a second magnetoresistive sense element. The first and second sense elements have respective first and second pinned layers having the same reference magnetization. The first and second sense elements have respective first and second sense layers, each self-biased to have a first sense magnetization. A permanent magnet layer is proximate the second sense element. In the absence of an external magnetic field, the permanent magnet layer magnetically biases the first sense magnetization of the second sense layer produce a second sense magnetization of the second sense layer that differs from the first sense magnetization, and the first sense layer of the first sense element retains the first sense magnetization.

Abstract: A structure for preventing charge induced leakage of a semiconductor device includes a shield separated from a first interconnect by at least a first lateral spacing and separated from a second interconnect by at least a second lateral spacing. The first interconnect is connected to a first junction and the second interconnect is connected to a second junction. A shield bias is connected to the shield to terminate an electromagnetic field on the shield. The shield between the first and second lateral spacings has a minimum width to substantially prevent formation of a conductive channel between the first and second junctions. The shield may be formed over a portion of the first junction and over a portion of the second junction to substantially prevent formation of another conductive channel between the first and second junctions at a location that does not have the first and second lateral spacings.

Abstract: A device comprises a silicon-on-insulator (SOI) substrate having first and second silicon layers with an insulator layer interposed between them. A structural layer, having a first conductivity type, is formed on the first silicon layer. A well region, having a second conductivity type opposite from the first conductivity type, is formed in the structural layer, and resistors are diffused in the well region. A metallization structure is formed over the well region and the resistors. A first cavity extends through the metallization structure overlying the well region and a second cavity extends through the second silicon layer, with the second cavity stopping at one of the first silicon layer and the insulator layer. The well region interposed between the first and second cavities defines a diaphragm of a pressure sensor. An integrated circuit and the pressure sensor can be fabricated concurrently on the SOI substrate using a CMOS fabrication process.

Abstract: A magnetic field sensor for sensing an external magnetic field along a sensing direction oriented perpendicular to a plane of the magnetic field sensor comprises a sensor bridge. The sensor bridge has a first sensor leg that includes a first magnetoresistive sense element and a second sensor leg that includes a second magnetoresistive sense element. The first and second sense elements include respective first and second pinned layers having corresponding first and second reference magnetizations within the plane and oriented in the same direction. The first and second sense elements further include respective first and second sense layers, each having an indeterminate magnetization state. A permanent magnet layer is proximate the magnetoresistive sense elements. In the absence of an external magnetic field, the permanent magnet layer magnetically biases the indeterminate magnetization state of each sense layer to produce a sense magnetization of the first and second sense layers.