Abstract: Disclosed are a new AXL-targeting monoclonal antibody and antibody-drug conjugate. Also disclosed is a method for preparing said antibody and antibody-drug conjugate. The AXL antibody of the present invention can bind with purified human AXL protein and multiple AXL on tumor cell surface with high effectiveness and high specificity. Said humanized antibody also has high affinity and low immunogenicity. Said AXL antibody-drug conjugate has markable performance against tumors having high AXL expression.

Abstract: Systems, apparatus and methods are provided for performing cache program operations in a non-volatile storage system. A method may comprise issuing a first cache program operation from a storage controller to a non-volatile storage device to write data to a first regular block, writing the data to the first regular block and a copy of the data to a backup block, determining that a program error has occurred while writing the data to the first regular block, asserting the program error to the storage controller, retrieving a mapping between the first regular block and the backup block, issuing a read operation to read the copy of the data from the backup block, reading the copy of the data from the backup block and issuing a second cache program operation to write the data to a second regular block and marking the first regular block as defective.

Abstract: The present disclosure discloses a method for synthesizing quinolones intermediates by a continuous flow reaction. Specifically, according to the method, a microchannel reactor is used, which improves the selectivity and conversion rate of the reaction, and the conversion rate of compound ii is increased to more than 95% and the yield is increased to more than 85%; avoids the use of a solvent such as methanol, and methyl tert-butyl ether, etc., in the intermittent reaction process, which simplifies the post-processing method, shortens the overall operation time from about 24 hours to a few minutes, greatly improving the production efficiency, and realizing the continuity and automation of the whole process; and thus makes the product have high purity and high yield, which is suitable for industrial production.

Abstract: A physiological signal monitoring device includes a base, a sensor, a transmitter, an adhesive layer and a pad. The sensor is carried by the base. The transmitter is coupled to the sensor. The adhesive layer is arranged on a bottom surface of the base. The pad includes an adhesive backing and a coupling backing. The adhesive backing is fabricated by weaving first threads and includes first holes. The coupling backing provides a coupling surface, and is fabricated by weaving second threads and includes second holes and piques. The piques are arranged on the coupling surface to form convex and concave three-dimensional textures on the coupling surface. The adhesive layer soaks the pad through the second holes and wraps at least one of the second threads and the first threads, so as to make the pad be connected to the base through the adhesive layer.

Abstract: The present invention provides a B7-H3 nanobody, the preparation method and use thereof. The B7-H3 nanobody comprises framework regions 1-4 (FR 1-4) and complementarity determining regions 1-3 (CDR 1-3), can specifically bind to B7-H3, and can be used for detecting B7-H3 molecules, and be used for the treatment of various malignant tumors with abnormal expression of B7-H3 molecule.

Abstract: A semiconductor-on-insulator (SOI) structure and a method for forming the SOI structure. The method includes forming a first dielectric layer on a first semiconductor layer. A second semiconductor layer is formed over an etch stop layer. A cleaning solution is provided to a first surface of the first dielectric layer. The first dielectric layer is bonded under the second semiconductor layer in an environment having a substantially low pressure. An index guiding layer may be formed over the second semiconductor layer. A third semiconductor layer is formed over the second semiconductor layer. A distance between a top of the third semiconductor layer and a bottom of the second semiconductor layer varies between a maximum distance and a minimum distance. A planarization process is performed on the third semiconductor layer to reduce the maximum distance.

Abstract: A misuse warning module, including a detection circuit and a warning circuit is provided. The detection circuit is electrically connected to the power circuit of the LED lamp to detect the type of external power supply signal and the current level in the power loop and output the detection signal. The warning circuit is configured to generate a misuse warning based on the detection signal to prompt the user that the LED lamp is connected to an incompatible external power supply.

Abstract: Systems, apparatus and methods are provided for determining an optimal performance profile and a predicted temperature. A method may include receiving a command from a host. The command may contain a logical block address (LBA) for data stored in a data storage system, a length for a data size associated with the command, and a timestamp associated with the command. The method may further include obtaining LBA information, the timestamp, the data size from the command, providing the LBA information, the timestamp, the data size, along with temperature readings, and a performance profile as inputs to a machine learning model, determining an optimal performance profile and a predicted temperature using the machine learning model and configuring a storage controller with settings of the optimal performance profile.

Abstract: A method and an apparatus for displaying an information flow on a terminal device, an electronic device, a computer-readable storage medium, and a computer program product are provided. An implementation is: in response to detecting an activation operation on an application for displaying the information flow, reproducing, on the terminal device, a first page displayed on the terminal device when the application is last switched to running in the background or closed; and in response to determining that a time interval between the activation operation and the application being last switched to running in the background or closed does not exceed a first threshold, displaying a second page as a continuation of a content entry displayed in the first page, where the second page includes at least one first content entry cached in the terminal device before the activation operation but not displayed in the first page.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.

Abstract: The present disclosure relates to mobile communications technologies, and in particular, to a mobile communication method, apparatus, and device. The method includes: receiving, by user equipment UE, a non-access stratum NAS security mode command message from a mobility management entity MME, where the NAS security mode command message carries first verification matching information used to verify UE capability information received by the MIME; determining, by the UE based on the first verification matching information, whether the UE capability information received by the MME is consistent with UE capability information sent by the UE to the MIME; and if the UE capability information received by the MME is consistent with the UE capability information sent by the UE to the MME, sending, by the UE, a NAS security mode complete message to the MME.

Abstract: A color correction system and a colorimeter positioning method therefore are provided. A first color block is displayed in a first display area of a display. During the period of displaying the first color block, a first sensing value is acquired for the first color block through a sensor of a colorimeter. The first sensing value is compared with a first reference value to determine whether the first sensing value meets the first specific condition. In response to the first sensing value meeting the first specific condition, a second color block is displayed in the first display area of the display. During the period of displaying the second color block, a second sensing value is acquired for the second color block through the sensor. The second sensing value is compared with a second reference value to determine whether the second sensing value meets the second specific condition.

Abstract: A semiconductor package includes a lead frame, a low side field-effect transistor (FET), a high side FET, a metal clip, and a molding encapsulation. The low side FET is flipped and is attached to a first die paddle of the lead frame. The lead frame comprises one or more voltage input (Vin) leads; a gate lead; one or more switching node (Lx) leads; a first die paddle; a second die paddle; and an end paddle. Each of an exposed bottom surface of the one or more Lx leads is directly connected to an exposed bottom surface of the end paddle. A longitudinal direction of an exposed bottom surface of the gate lead is perpendicular to a longitudinal direction of each of the exposed bottom surface of the one or more Lx leads. An entirely of each of the one or more Vin leads is of the full thickness.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: Disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. In one embodiment, a method for forming a semiconductor device, includes: depositing a protective coating on a first polysilicon layer; forming an epitaxial layer on the protective coating; and depositing a second polysilicon layer over the epitaxial layer, wherein the protective coating comprises a third polysilicon layer, wherein the third polysilicon layer is deposited at a first temperature in a range of 600-700 degree Celsius, and wherein the third polysilicon layer in the protect coating is configured to protect the first polysilicon layer when the second polysilicon layer is etched.

Abstract: The present disclosure provides a chemical supply system, including a chamber, a tubing extending into the chamber, an interlock apparatus, including a fixture for fastening the tubing, and means for determining whether the tubing is fastened by the fixture.

Abstract: Systems, apparatus and methods are provided for managing a removable solid state storage system for data loss prevention. A method may include maintaining a standby mode for a timer of the removable solid state storage system until the removable solid state storage system is disconnected from an external power supply, setting an operation time interval on the timer, using the timer to count how long the removable solid state storage system has been disconnected, sending an interrupt to a storage controller of the removable solid state storage system from the timer when the timer counts to the operation time Interval, and performing data loss prevention operations using a power supplied by a removable battery.