Abstract: Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and manufacturing methods thereof. The methods described herein allow for complex shapes (e.g., “L-shaped”) to be etched into a multi-layered stack to form fins used in the formation of active regions of the GAA nanostructure transistor structures. In some embodiments, the active regions may be formed with a first channel width and a first source/drain region having a first width and a second channel width and a second source/drain region having a second width that is less than the first width.

Abstract: The present invention relates to an LC medium comprising two or more polymerizable compounds, at least one of which contains a substituent comprising a tertiary OH group, to its use for optical, electro-optical and electronic purposes, in particular in LC displays, especially in LC displays of the PSA (polymer sustained alignment) or SA (self-aligning) mode, to an LC display of the PSA or SA mode comprising the LC medium, and to a process of manufacturing the LC display using the LC medium, especially an energy-saving LC display and energy-saving LC display production process.

Abstract: A detecting system includes a camera and a processor. The camera is configured to capture a first target object to generate a first image and is configured to capture a second target object different from the first target object to generate a second image. The processor is configured to detect the first image by using a first model to generate a first result and is configured to train the first model by using the first result. When the processor trains the first model by using the first result, the camera captures the second target object. After the camera captures the second target object, the processor further trains the first model by using the second image.

Abstract: A terminal structure includes a terminal body, a locking means formed on at least one face of the terminal body, an insertion unit extending from a first end of the terminal body, and a holding mechanism extending from a second end of the terminal body. The insertion unit is mounted on a circuit board. The circuit board defines multiple conducting holes. The insertion unit is inserted into and locked in one of the conducting holes of the circuit board. The holding mechanism includes two opposite clamping arms and a clamping space defined between the two clamping arms. An electronic element is held by the holding mechanism. The electronic element has multiple lead legs. One of the lead legs of the electronic element is clamped between the two clamping arms and held in the clamping space.

Abstract: A modified polyethylene terephthalate copolyester, including three fragments shown as [Fragment 1], [Fragment 2], and [Fragment 3] in the specification, is provided.

Abstract: A method and a system for dynamically tuning thermal design power and a non-transitory computer-readable storage medium are described. The system is configured to dynamically tune turbo boost mode operation parameters of a central processing unit (CPU), independent of related settings of a turbo boost operation state of the CPU. In an embodiment, a controller is configured to send a power tuning signal to a basic input/output system (BIOS) to directly intervene and tune a real-time operating power of the CPU.

Abstract: Provided is a protein composition for repairing hair follicles for repairing hair follicles, wherein the preparation method therefor comprises the following steps: adding any one of or a combination of 20 U/mL-35 U/mL of a nuclease or an omnipotent nuclease to a cell protein extract, performing enzymatic hydrolysis at 37° C.±1° C. for 15-40 minutes, and separating and purifying the prepared enzymatic hydrolysate. The obtained cell protein extract and protein composition have the effects of repairing damaged hair follicle cells, efficiently repairing damaged hair follicles and significantly improving the activity of hair follicle, and have the advantages of a high purity, a good stability, being safe and effective, and effectively solving the problems of living cells needing to be refrigerated, and the activity thereof being limited by cell viability duration, etc.

Abstract: Methods and systems for techniques for enabling wireless devices to receive multicast services in a radio resource control inactive (RRC_INCTIVE) state are disclosed. In an implementation, a method of wireless communication includes receiving, by a first network node, from a second network node, a session management signaling that include an alternative quality of service profile, and transmitting, by the first network node, to a wireless device, multicast session data based on the alternative quality of service profile during a radio resource control inactive period.

Abstract: Presented are systems, methods, apparatuses, or computer-readable media for configuring mobile relay nodes. A first network node may send, to a second network node, configuration information. The configuration information may be associated with a node capable of providing at least one user plane (UP) function.

Abstract: The present disclosure relates to a method for predicting an amount of water-sealed gas in a high-sulfur water-bearing gas reservoir. The method solves the problem that no method has yet been proposed for predicting the amount of water-sealed gas in a high-sulfur water-bearing gas reservoir. According to the technical solution, the method includes: considering that the volume of the gas reservoir does not change during the production of the constant-volume gas reservoir, deriving, based on a material balance method, a material balance equation of the high-sulfur water-bearing gas reservoir in consideration of water-sealed gas and water-soluble gas, solving and drawing a chart of water-sealed gas in the high-sulfur water-bearing gas reservoir by an iterative algorithm, obtaining a recovery factor of the high-sulfur water-bearing gas reservoir in consideration of water-sealed gas and water-soluble gas, and further obtaining the amount of water-seal gas in the high-sulfur water-bearing gas reservoir.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a first substrate comprising a first semiconductor material. A first light sensor is disposed within the first substrate. The first light sensor is configured to absorb electromagnetic radiation within a first wavelength range. A second light sensor is disposed within an absorption structure underlying the first substrate. The second light sensor is configured to absorb electromagnetic radiation within a second wavelength range different from the first wavelength range. The absorption structure underlies the first light sensor and comprises a second semiconductor material different from the first semiconductor material.

Abstract: Methods, systems, and devices related to digital wireless communication, and more specifically, to techniques related to transmitting sidelink capability and security information between peer terminals. In one exemplary aspect, a method for wireless communication includes transmitting, by the first terminal, capability information associated with the first terminal to the second terminal based on a triggering event, the capability information associated with the first terminal relating to a capability of the first terminal to directly communicate with a second terminal. In another exemplary aspect, a method for wireless communication includes receiving information associated with a first terminal from the first terminal, the capability information associated with the first terminal relating to a capability of the first terminal to directly communicate with the second terminal. The method also includes determining transmission parameters for unicast communication with the first terminal.

Abstract: Semiconductor structures and methods are provided. An exemplary semiconductor structure according to the present disclosure includes a two-port static random access memory (SRAM) cell having a write port portion and a read port portion electrically coupled to the write port portion. The read port portion includes a transistor having a gate structure. The semiconductor structure also includes a first plurality of metal lines comprising a write bit line and a complementary write bit line are positioned at a first interconnect layer disposed over the gate structure and a read word line positioned at a second interconnect layer and electrically coupled to the gate structure, the second interconnect layer is disposed under the gate structure.

Abstract: The present disclosure relates to receiving, by a first wireless communication device from a Network (e.g. Base Station (BS)), information indicating that the Network supports Sidelink (SL) Carrier Aggregation (CA). The first wireless communication device communicates with a second wireless communication device SL communications. The first wireless communication device reports to the Network, at least one of SL anomaly state on a first carrier or SL anomaly state recovery on the first carrier.

Abstract: An integrated circuit includes a first SRAM cell and a second SRAM cell, each including a plurality of field-effect transistors (FETs), a front metal line over the FETs and a back metal line below the FETs, and a middle strap area disposed between the first SRAM cell and the second SRAM cell. The middle strap area includes a plurality of gate stacks extending lengthwise along a direction, a gate isolation structure extending through a gate stack of the plurality of gate stacks, a feedthrough via (FTV) embedded in the gate isolation structure, a first dielectric gate disposed between the conductive structure and the first SRAM cell, and a second dielectric gate disposed between the conductive structure and the second SRAM cell. The FTV electrically couples the front metal line and the back metal line.

Abstract: Semiconductor structures and methods are provided. An exemplary semiconductor structure according to the present disclosure includes a two-port static random access memory (SRAM) cell having a write port portion and a read port portion electrically coupled to the write port portion. The read port portion includes a transistor having a first source/drain feature and a second source/drain feature. The semiconductor structure also includes a first plurality of metal lines comprising a write bit line and a complementary write bit line, wherein the first plurality of metal lines are positioned at a first metal interconnect layer, wherein the first metal interconnect layer is disposed over the first source/drain feature. The semiconductor structure also includes a read bit line positioned at a second metal interconnect layer, where the second metal interconnect layer is disposed under the first source/drain feature.

Abstract: A first gate-all-around (GAA) transistor and a second GAA transistor may be formed on a substrate. The first GAA transistor includes at least one silicon plate, a first gate structure, a first source region, and a first drain region. The second GAA transistor includes at least one silicon-germanium plate, a second gate structure, a second source region, and a second drain region. The first GAA transistor may be an n-type field effect transistor, and the second GAA transistor may be a p-type field effect transistor. The gate electrodes of the first gate structure and the second gate structure may include a same conductive material. Each silicon plate and each silicon-germanium plate may be single crystalline and may have a same crystallographic orientation for each Miller index.

Abstract: A preparation method of a modified bismaleimide resin includes the following steps. Maleic anhydride is mixed with a bisamine compound to obtain a corresponding mixture. The mixture is heated. The bisamine compound has a main chain structure or fragment represented by Formula A, Formula B, or Formula C as described in the description.

Abstract: A key structure including a carrier, a keycap, a lifting member, and an elastic member is provided. The carrier includes a carrier body and multiple positioning hooks. The carrier body has multiple vias, and the positioning hooks are respectively disposed corresponding to the vias. Orthographic projection of each of the positioning hooks falls in the corresponding via. Each of the positioning hooks includes a first positioning portion and a second positioning portion respectively connected to two inner wall surfaces in the corresponding via. The keycap is disposed above the carrier body. The lifting member is disposed between the carrier body and the keycap. One end of the lifting member is connected to the keycap, and an other end of the lifting member is connected to the positioning hooks. The elastic member is disposed between the carrier body and the keycap.