Abstract: The present disclosure relates to an image sensor comprising a substrate. A photodetector is in the substrate. A trench is in the substrate and is defined by sidewalls and an upper surface of the substrate. A first isolation layer extends along the sidewalls and the upper surface of the substrate that define the trench. The first isolation layer comprises a first dielectric material. A second isolation layer is over the first isolation layer. The second isolation layer lines the first isolation layer. The second isolation layer comprises a second dielectric material. A third isolation layer is over the second isolation layer. The third isolation layer fills the trench and lines the second isolation layer. The third isolation layer comprises a third material. A ratio of a first thickness of the first isolation layer to a second thickness of the second isolation layer is about 0.17 to 0.38.

Abstract: Liquid-crystal polymer is composed of the following repeating units: 10 mol % to 35 mol % of 10 mol % to 35 mol % of 10 mol % to 50 mol % of and 10 mol % to 40 mol % of 10 mol % to 40 mol % of or a combination thereof. Each of AR1, AR2, AR3, and AR4 is independently AR5 or AR5-Z-AR6, in which each of AR5 and AR6 is independently or a combination thereof, and Z is —O—, or C1-5 alkylene group. Each of X and Y is independently H, C1-5 alkyl group, CF3, or wherein R2 is H, CH3, CH(CH3)2, C(CH3)3, CF3, or n=1 to 4; and wherein R1 is C1-5 alkylene group.

Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

Abstract: A metal-insulator-metal (MIM) capacitor and methods of forming the same are described. In some embodiments, the method includes forming an opening having a first depth in one or more dielectric layers, depositing a layer in the opening and on the one or more dielectric layers, performing an anisotropic etch process to remove portions of the layer formed on horizontal surfaces, extending the opening to a second depth in the one or more dielectric layers, removing the layer, extending the opening to a third depth in the one or more dielectric layers, and forming a MIM capacitor in the opening.

Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

Abstract: A semiconductor structure includes a capacitor structure and a contact structure. The capacitor structure includes an electrode layer, a protective dielectric layer, and a capacitor dielectric layer. The protective dielectric layer covers a top surface of the electrode layer. The capacitor dielectric layer is on the protective oxide layer. The contact structure penetrates the protective oxide layer and electrically connects to the electrode layer.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: The present application provides a binder and a lithium-ion battery including the binder. The binder is rich in amino groups, has strong alkali resistance and is not easy to decompose. Besides, rich amino groups in the binder are prone to form hydrogen bonds, so that the binder more fully coats an active material and can enhance an acting force between the active material and a current collector, improve a peeling strength of an electrode piece, and significantly improve a cycling performance, expansion rate, and rate capability of lithium-ion batteries using the binder.

Abstract: The present application provides a boric acid derivative modified binder and a lithium-ion battery including the binder. Surfaces of emulsion particles of the binder are rich in boric acid groups (—B(OH)2). When the binder is applied to an electrode piece of the battery, the boric acid groups can be subjected to a dehydration condensation reaction with —OH in sodium carboxymethyl cellulose dispersant, or with —OH in a functional monomer during the drying process of the electrode piece, to form a three-dimensional network, increasing the bonding force and greatly improving the peeling strength of the electrode piece. The binder can also significantly improve the cycle performance of the lithium-ion battery, thereby prolonging the cycle life of the lithium-ion battery.

Abstract: A method includes: providing a first design layout including a plurality of cells; updating a first cell of the plurality of cells using optical proximity correction to provide a first updated cell and a data set; and updating a second cell from remaining cells in the first design layout based on the data set and a model without involvement of optical proximity correction to provide a second updated cell, wherein the model includes hidden layers including nodes and is trained to obtaining converged values of the nodes of the hidden layers through providing a mapping of edge segments before lithography enhancement and edge segments after lithography enhancement using optical proximity correction, and wherein at least one of the providing, and updating is executed by one or more processors.

Abstract: A mouse device includes a roller module. The roller module includes a base member, a scroll wheel, a magnetic conductor, a swingable arm, a driving motor and an actuating element. The scroll wheel is installed on the base member. The magnetic conductor is located beside the scroll wheel. When the scroll wheel is rotated, the magnetic conductor is correspondingly rotated. The swingable arm is installed on the base member. The swingable arm includes a magnetic element. The swingable arm is swingable relative to the magnetic conductor. When the swingable arm is swung to a first position, the magnetic element is aligned with the magnetic conductor. Consequently, a magnetic attraction force between the magnetic element and the magnetic conductor is generated. When the swingable arm is swung to a second position, the magnetic attraction force between the magnetic element and the magnetic conductor is eliminated.

Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

Abstract: Disclosed are a binder and a battery including the binder. The novel aqueous binder with self cross-linking performance, strong bonding performance, and good flexibility is obtained by copolymerizing a plurality of functional monomers. The binder has the characteristics of good processability and high solid content of the slurry when applied to a positive electrode; the positive electrode plate obtained by applying the slurry has high peeling force and good cyclic stability, and its rate capability is superior to that obtained by applying PVDF binder; and the binder is green and environmental friendly, and it is expected to replace PVDF in batteries and achieve large-scale application.

Abstract: The present disclosure relates to an image sensor comprising a substrate. A photodetector is in the substrate. A trench is in the substrate and is defined by sidewalls and an upper surface of the substrate. A first isolation layer extends along the sidewalls and the upper surface of the substrate that define the trench. The first isolation layer comprises a first dielectric material. A second isolation layer is over the first isolation layer. The second isolation layer lines the first isolation layer. The second isolation layer comprises a second dielectric material. A third isolation layer is over the second isolation layer. The third isolation layer fills the trench and lines the second isolation layer. The third isolation layer comprises a third material. A ratio of a first thickness of the first isolation layer to a second thickness of the second isolation layer is about 0.17 to 0.38.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: An electronic device assembly includes a first electronic device and a second electronic device. The first electronic device includes a first wall body, a first opening, a sliding seat, a first magnetic attraction element, an elastic element and a connecting terminal. When the second wall body is close to the first wall body, the second magnetic attraction element and the first magnetic attraction element are magnetically attracted by each other. Consequently, the sliding seat is moved toward the first wall body, the elastic element is compressed, and the connecting terminal is protruded outside the first opening and contacted with the connector. When the second wall body is separated from the first wall body, the compressed elastic element is restored. Consequently, the sliding seat is moved away from the first wall body and the connecting terminal is retracted inside the first electronic device.

Abstract: A method includes providing a first design layout including cells; updating a first cell in the plurality of cells using optical proximity correction to provide a first updated cell and a data set; training a model based on a layout-dependent parameter of a second design layout; and updating a second cell based on the data set and the model to provide a second updated cell. The model includes an input layer, a hidden layer and an output layer. Training the model includes obtaining converged values of nodes of the hidden layer. Obtaining converged values of nodes of the hidden layer includes providing information on edge segments before and after lithography enhancement to the input layer and the output layer, respectively, until values of nodes of the hidden layer attains convergence in terms of a cost function.

Abstract: A mouse device includes a wheel control mechanism and a control unit. The control unit is electrically connected with a magnetic force module and a rotating speed detector of the wheel control mechanism. Under control of the control unit, a first direction current or a second direction current is selectively provided to drive the magnetic force module. The flowing directions of the first direction current and the second direction current are opposite. Consequently, the rotating mode of the wheel control mechanism can be switched between different modes.

Abstract: Various embodiments of the present application are directed towards a method for forming a metal-insulator-metal (MIM) capacitor comprising an enhanced interfacial layer to reduce breakdown failure. In some embodiments, a bottom electrode layer is deposited over a substrate. A native oxide layer is formed on a top surface of the bottom electrode layer and has a first adhesion strength with the top surface. A plasma treatment process is performed to replace the native oxide layer with an interfacial layer. The interfacial layer is conductive and has a second adhesion strength with the top surface of the bottom electrode layer, and the second adhesion strength is greater than the first adhesion strength. An insulator layer is deposited on the interfacial layer. A top electrode layer is deposited on the insulator layer. The top and bottom electrode layers, the insulator layer, and the interfacial layer are patterned to form a MIM capacitor.

Abstract: Pharmaceutical preparations containing polypeptides having particular sialylation patterns, and methods for the treatment of immune-related thrombocytopenia with such preparations, are described.