Abstract: A roller mouse includes a casing, a wheel module, a swingable assembly and an adjusting element. The wheel module includes a wheel element. The swingable assembly is fixed on the wheel module, and located near the wheel element. When the adjusting element is in a first position, the swingable assembly is contacted with the wheel element, so that the wheel module is in a first clicking mode. When the adjusting element is moved to a second position, the swingable assembly is pushed by the adjusting element, and the swingable assembly is separated from the wheel element, so that the wheel module is in a second clicking mode.

Abstract: A method includes providing a first design layout including cells; updating a first cell in the plurality of cells using optical proximity correction to provide a first updated cell and a data set; training a model based on a layout-dependent parameter of a second design layout; and updating a second cell based on the data set and the model to provide a second updated cell. The model includes an input layer, a hidden layer and an output layer. Training the model includes obtaining converged values of nodes of the hidden layer. Obtaining converged values of nodes of the hidden layer includes providing information on edge segments before and after lithography enhancement to the input layer and the output layer, respectively, until values of nodes of the hidden layer attains convergence in terms of a cost function.

Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

Abstract: Various embodiments of the present application are directed towards a method for forming a metal-insulator-metal (MIM) capacitor comprising an enhanced interfacial layer to reduce breakdown failure. In some embodiments, a bottom electrode layer is deposited over a substrate. A native oxide layer is formed on a top surface of the bottom electrode layer and has a first adhesion strength with the top surface. A plasma treatment process is performed to replace the native oxide layer with an interfacial layer. The interfacial layer is conductive and has a second adhesion strength with the top surface of the bottom electrode layer, and the second adhesion strength is greater than the first adhesion strength. An insulator layer is deposited on the interfacial layer. A top electrode layer is deposited on the insulator layer. The top and bottom electrode layers, the insulator layer, and the interfacial layer are patterned to form a MIM capacitor.

Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.

Abstract: In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer into a chamber. The method also includes creating an exhaust flow from the chamber. The method further includes depositing a film on the semiconductor wafer by supplying a processing gas into the chamber. In addition, the method includes detecting, with a use of a gas sensor, a concentration of the processing gas in the exhaust flow and generating a detection signal according to a result of the detection. The method further includes supplying a cleaning gas into the processing chamber for a time period after the film is formed on the semiconductor wafer. The time period is determined based on the detection signal.

Abstract: A method and a system of performing layout enhancement include: providing a first design layout comprising a plurality of cells; updating a first cell in the plurality of cells using optical proximity correction to provide a first updated cell and a data set; updating a second cell from remaining cells in the first design layout based on the data set to provide a second updated cell; and manufacturing a mask based on the first updated cell and the second updated cell in the first design layout.

Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

Abstract: A mouse roller module includes a roller, a swingable rod, an adjusting assembly and a positioning track. When the swingable rod is contacted with the roller at a first location, a first interference force between the swingable rod and the roller is generated. When the swingable rod is swung to a second location, the swingable rod is contacted with the roller at a second location and a second interference force between the swingable rod and the roller is generated. The adjusting assembly includes a protrusion structure. The positioning track includes a first positioning recess and a second positioning recess. When the swingable rod is contacted with the roller at the first location, the protrusion structure is positioned in the first positioning recess. When the swingable rod is contacted with the roller at the second location, the protrusion structure is positioned in the second positioning recess.

Abstract: A scroll mouse includes a casing, a scroll wheel mouse and a waterproof module. The casing includes a first opening and a second opening. The scroll wheel includes a first rotation shaft and a second rotation shaft. The waterproof module includes a waterproof cap and a waterproof ring. A first gap between the first rotation shaft and the first opening is sealed by the waterproof cap. A second gap between the second rotation shaft and the second opening is sealed by the waterproof ring. Since the foreign liquid is prevented from entering an inner portion of the casing, the scroll mouse has the waterproof function.

Abstract: A metal probe structure and a method for fabricating the same are provided. The metal probe structure includes a multi-layer substrate, a first flexible dielectric layer, a second flexible dielectric layer, and a plurality of first metal components. The first flexible dielectric layer is disposed over the multi-layer substrate and has a conductive layer formed thereover. The second flexible dielectric layer is disposed over the first flexible dielectric layer to cover the conductive layer. The plurality of first metal components is disposed over the conductive layer and partially in the second flexible dielectric layer to serve as a metal probe.

Abstract: A medical instrument includes an instrument body and an operating mechanism. The instrument body has a window portion having a light permeable segment. The operating mechanism includes an indicator unit and an operating unit. The indicator unit is disposed in the window portion, and is changeable between a detectable state where the indicator unit is detectable through the light permeable segment of the window portion and a non-detectable state where the indicator unit is non-detectable through the light permeable segment. The operating unit is connected to the indicator unit and operable to change the indicator unit between the detectable and non-detectable states. An endoscopy system including the medical instrument is also disclosed.

Abstract: Various embodiments of the present application are directed towards a method for forming a metal-insulator-metal (MIM) capacitor comprising an enhanced interfacial layer to reduce breakdown failure. In some embodiments, a bottom electrode layer is deposited over a substrate. A native oxide layer is formed on a top surface of the bottom electrode layer and has a first adhesion strength with the top surface. A plasma treatment process is performed to replace the native oxide layer with an interfacial layer. The interfacial layer is conductive and has a second adhesion strength with the top surface of the bottom electrode layer, and the second adhesion strength is greater than the first adhesion strength. An insulator layer is deposited on the interfacial layer. A top electrode layer is deposited on the insulator layer. The top and bottom electrode layers, the insulator layer, and the interfacial layer are patterned to form a MIM capacitor.

Abstract: A mouse device includes a casing, a switch, a button, a travel distance adjustment and a knob structure. The button is exposed to a top side of the casing. A first end of the travel distance adjustment assembly is contacted with the button. A second end of the travel distance adjustment assembly includes an internal thread structure. The internal thread structure of the travel distance adjustment assembly is engaged with an external thread structure of the knob structure. While an operating part of the knob structure is rotated, the knob structure is not moved and the travel distance adjustment assembly is moved upwardly relative to the knob structure to push the force-exerted part upwardly. Consequently, a triggering speed of the switch is increased.

Abstract: A liquid-crystal polymer includes at least one repeating unit having a spiro structure, and the repeating unit occupies 1 mol % to 20 mol % of the liquid-crystal polymer. The liquid-crystal polymer is composed of the following repeating units: 1 mol % to 20 mol % of 10 mol % to 35 mol % of 10 mol % to 35 mol % of 10 mol % to 50 mol % of and 10 mol % to 40 mol % of AR1 is wherein each of ring R and ring S is independently a C3-20 ring, ring R and ring S share a carbon atom, and each of K1 and K2 is independently a C5-20 conjugated system. Each of AR2, AR3, AR4, and AR5 is independently AR6 or AR6—Z—AR7.

Abstract: Liquid-crystal polymer is composed of the following repeating units: 10 mol % to 35 mol % of 10 mol % to 35 mol % of 10 mol % to 50 mol % of and 10 mol % to 40 mol % of 10 mol % to 40 mol % of or a combination thereof. Each of AR1, AR2, AR3, and AR4 is independently AR5 or AR5-Z-AR6, in which each of AR5 and AR6 is independently or a combination thereof, and Z is —O—, or C1-5 alkylene group. Each of X and Y is independently H, C1-5 alkyl group, CF3, or wherein R2 is H, CH3, CH(CH3)2, C(CH3)3, CF3, or n=1 to 4 ; and wherein R1 is C1-5 alkylene group.

Abstract: A method of detecting a power level of an RF signal includes driving an internal node of a power detection circuit to a DC node voltage level, generating, based on the DC node voltage level, a first component of an output voltage on an output node of the power detection circuit, receiving the RF signal on an input node of the power detection circuit, dividing the RF signal to generate a modulation signal on the internal node, and generating, by at least partially rectifying the modulation signal, a second component of the output voltage on the power detection circuit output node.

Abstract: A triaxial motion device includes first, second and third bases, first and second power sources, and a workpiece positioning member. The first power source is disposed on the first base and has a first driving shaft. The second base is connected with the first driving shaft through a cannular rotary shaft in a way that the second base is rotatable about a first axis. The second power source is disposed on the first base and has a second driving shaft penetrating through the cannular rotary shaft. The third base is connected with the second driving shaft in a way that the third base is rotatable about a second axis perpendicular to the first axis. The workpiece positioning member is disposed on the third base and rotatable about a third axis perpendicular to the second axis. Therefore, the triaxial motion device has small volume and performs highly precise motion.

Abstract: A keyboard device includes a keyboard module and a palm rest module. The palm rest module is arranged beside a lateral side of the keyboard module, and supports a wrist of a user. The palm rest module includes a pedestal, a casing and an adjusting element. The casing is disposed on the pedestal. The adjusting element is arranged between the pedestal and the casing. A position of the casing relative to the pedestal is adjustable through the adjusting element. In a first usage state, the casing is moved toward the keyboard module or moved away from the keyboard module through the adjusting element. In a second usage state, the casing is rotated about the adjusting element and relative to the keyboard module, so that an included angle is formed between the casing and the lateral side of the keyboard module.