Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.

Abstract: An electronic package and a manufacturing method thereof are provided, in which an electronic element is pasted on a routing layer that is configured with a plurality of conductive pillars, then the electronic element, the conductive pillars and the routing layer are covered with a cladding layer, and a circuit structure electrically connected to the electronic element and the conductive pillars is formed on the cladding layer. Therefore, the conductive pillars can be directly formed on the routing layer and the dielectric layer is omitted, so there is no need to consider the thickness of the dielectric layer, so as to facilitate the thinning of the electronic package.

Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.

Abstract: A polarizer includes a first polarization layer group. The first polarization layer group includes a first light-transmitting layer and a second light-transmitting layer. The first light-transmitting layer has a first X-direction refractive index and a first Y-direction refractive index. The second light-transmitting layer is superimposed on a top surface of the first light-transmitting layer. The second light-transmitting layer has a second X-direction refractive index and a second Y-direction refractive index. The first Y-direction refractive index is different from the second Y-direction refractive index, and the first X-direction refractive index is essentially the same as the second X-direction refractive index. The second light-transmitting layer has a first light-transmitting medium and a second light-transmitting medium arranged transversely, and a third refractive index of the first light-transmitting medium is different from a fourth refractive index of the second light-transmitting medium.

Abstract: The present disclosure relates an integrated chip. The integrated chip includes an isolation region disposed within a substrate and surrounding an active area. A gate structure is disposed over the substrate and has a base region and a gate extension finger protruding outward from a sidewall of the base region along a first direction to past opposing sides of the active area. A source contact is disposed within the active area and a drain contact is disposed within the active area and is separated from the source contact by the gate extension finger. A first plurality of conductive contacts are arranged on the gate structure and separated along the first direction. The first plurality of conductive contacts are separated by distances overlying the gate extension finger.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) chip comprising a front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV), as well as a method for forming the IC chip. In some embodiments, a semiconductor layer overlies a substrate. The semiconductor layer may, for example, be or comprise a group III-V semiconductor and/or some other suitable semiconductor(s). A semiconductor device is on the semiconductor layer, and a FEOL layer overlies the semiconductor device. The FEOL TSV extends through the FEOL layer and the semiconductor layer to the substrate at a periphery of the IC chip. An intermetal dielectric (IMD) layer overlies the FEOL TSV and the FEOL layer, and an alternating stack of wires and vias is in the IMD layer.

Abstract: An information handling system includes a printed circuit board, a screw, and a processor. The printed circuit board includes a through hole via. The through hole via includes top and bottom sections plated with a conductive plating material, and a middle section without any conductive plating material. The screw in physical communication with the top, middle, and bottom sections of the through hole via in the printed circuit board. The processor determines whether an electrical circuit is formed between the screw, the top section of the through hole via, and the bottom section of the through hole via. Based on the determination of the electrical circuit being formed, the processor provides an indication that no intrusion has been made into the information handling system.

Abstract: A microwave heating device including a chamber and a plurality of microwave sources is provided. The chamber is configured to accommodate at least one target. The plurality of microwave sources are disposed at a top of the chamber to emit a microwave to the target. An included angle between a direction of microwave electric field of a portion in the plurality of microwave sources and a direction of microwave electric field of another portion in the plurality of microwave sources is between 80 degrees and 100 degrees.

Abstract: An electronic package is provided, in which an electronic element and a plurality of shielding pillars are embedded in an encapsulating layer, a shielding layer is formed on one surface of the encapsulating layer to cover the electronic element and is in contact with and connected to the plurality of shielding pillars, and a circuit structure is formed on the other surface of the encapsulating layer to electrically connect to the electronic element. Therefore, when the electronic package is disposed on a circuit board, the design of the shielding layer and the plurality of shielding pillars can provide the electronic element with heat dissipation and shielding effects without a metal cover arranged on the electronic element.

Abstract: A semiconductor package structure includes a substrate, a bridge structure, a redistribution layer, a first semiconductor component, and a second semiconductor component. The substrate has a wiring structure. The bridge structure is over the substrate. The redistribution layer is over the bridge structure. The first semiconductor component and the second semiconductor component are over the redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the redistribution layer and the bridge structure.

Abstract: A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.

Abstract: A hierarchical artificial intelligence (AI) computing system includes at least one group of a first layer AI subsystems and n second layer AI subsystems. One of the at least one group of a first layer AI subsystems includes m first layer AI subsystems, and each of the m first layer AI subsystems is configured to perform inference based on internal sensing data or a first external sensing data to generate a first inference result; and the n second layer AI subsystems are respectively connected to the at least one group of the first layer AI subsystems, where each of the n second layer AI subsystems is configured to perform inference based on m first inference results, an operation command, and a second external sensing data to generate a second inference result.

Abstract: A bone substitute composition includes a bone substitute matrix and a conditioning solution. The bone substitute matrix includes 85% to 98% by weight of alkaline calcium phosphate powder, 1% to 10% by weight of a polymer, and 1% to 5% by weight of a crosslinker. The conditioning solution includes 90% to 97% by weight of water, 1% to 5% by weight of a phosphate, and 1% to 5% by weight of a water-soluble acidic compound.

Abstract: A signal transmitting element is used to solve the problem that an additional surgery is required to remove the conventional vascular monitoring element after completing the detecting task. The signal transmitting element comprises a body made of a specific biodegradable material. The body includes a signal sensing portion including a structure configured to sense a blood flow information of a blood vessel surrounded and contacted by the body, thereby generating a blood vessel signal; and a signal transmitting portion coupled with the signal sensing portion for receiving the blood vessel signal and including a specific structure configured to convert the blood vessel signal into a transmission signal.

Abstract: The present disclosure provides a chemical supply system, including a chamber, a tubing extending into the chamber, an interlock apparatus, including a fixture for fastening the tubing, and means for determining whether the tubing is fastened by the fixture.

Abstract: A surgical instrument includes a rod and a push portion. The push portion includes a first end connected to an end of the rod and a second end having a blade portion. The push portion includes a plurality of grooves. The plurality of grooves is recessed in a surface of the push portion and is spaced from each other. Each two adjacent grooves has a rib formed therebetween. A top face of a cross section of each rib is the surface of the push portion. Each rib has a guiding face on the cross section of the push portion. The guiding face is connected to the surface of the push portion. The guiding face faces a rotating direction of the rod. An angle between the guiding face and the surface of the push portion in the cross section is greater than 90°.

Abstract: An electrical connector includes: an insulating housing; plural rows of signal terminals; and a respective row of grounding terminals disposed in the insulating housing, each of the grounding terminals comprising a main part retained in the insulating housing and an upper elastic arm and a lower elastic arm extending obliquely from the main part, each of the upper and lower elastic arms having a respective contacting portion and a respective end extending downward from the contacting portion, wherein the main part defines a front face and a rear face confronting adjacent signal terminals, an upper face, and a lower face; and the respective ends deviate from the main part toward the rear face or the front face of the main part for contacting with the rear face or the front face of the main part.

Abstract: A substrate structure is provided, in which an insulating protection layer is formed on a substrate body having a plurality of electrical contact pads, and the insulating protection layer has a plurality of openings corresponding to the plurality of exposed electrical contact pads, and the insulating protection layer is formed with a hollow portion surrounding a partial edge of at least one of the electrical contact pads at at least one of the openings, so as to reduce the barrier of the insulating protection layer.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure, the method includes forming a buffer layer over a substrate. An active layer is formed on the buffer layer. A top electrode is formed on the active layer. An etch process is performed on the buffer layer and the substrate to define a plurality of pillar structures. The plurality of pillar structures include a first pillar structure laterally offset from a second pillar structure. At least portions of the first and second pillar structures are spaced laterally between sidewalls of the top electrode.

Abstract: An information handling system includes a printed circuit board, a screw, and a processor. The printed circuit board includes a through hole via. The through hole via includes top and bottom sections plated with a conductive plating material, and a middle section without any conductive plating material. The screw in physical communication with the top, middle, and bottom sections of the through hole via in the printed circuit board. The processor determines whether an electrical circuit is formed between the screw, the top section of the through hole via, and the bottom section of the through hole via. Based on the determination of the electrical circuit being formed, the processor provides an indication that no intrusion has been made into the information handling system.