Abstract: A type of electricity and air supplying equipment, which includes: a clutch mechanism, a belt assembly, a motor having a transmission shaft, a generator unit having a generating wheel, and an air compressor having an air compressing wheel. The clutch mechanism has first and second clutch shafts that can be engaged or disengaged. The belt assembly includes a first belt connected between the transmission shaft and the generating wheel, a second belt connected between the generating wheel and the first clutch shaft, and a third belt connected between the second clutch shaft and the air compressing wheel. The motor drives the generator unit to run and generate electricity, and meanwhile, the generator unit drives the air compressor through the clutch mechanism. Thus, the equipment can use single power for electricity generation and high-pressure air production, while providing heat insulation and easy assembly.

Abstract: A sensing device including a transistor, at least one response electrode, and a receptor is provided. The transistor includes a gate end, a source end, a drain end, and a semiconductor layer. The source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end. The at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor. The receptor is bonded onto the at least one response electrode. When a voltage is applied to the at least one response electrode, an electric field between the at least one response electrode and the gate end of the transistor is F, and F?1 mV/cm.

Abstract: A module structure includes a front sheet, a back sheet opposite to the front sheet, and a solar cell disposed between the front sheet and the back sheet. A first encapsulation film is disposed between the solar cell and the front sheet, and a second encapsulation film is disposed between the solar cell and the back sheet. The first encapsulation film and the second encapsulation film include an encapsulation material, which includes a resin and a fluorescent molecule. The fluorescent molecule includes a fluorescent group bonded to a polyhedral oligomeric silsesquioxane.

Abstract: CD73 (also known as ecto-5?-nucleotidase) inhibitor compounds are provided, as well as compositions and uses thereof for treating or preventing CD73-associated or related diseases, disorders and conditions, including cancer- and immune-related disorders. CD73 inhibitor compounds include compounds having the structure set forth in Formula I and pharmaceutically acceptable esters or salts thereof.

Abstract: Provided herein are single-domain antibodies targeting BCMA, and chimeric antigen receptors (such as monovalent CAR, and multivalent CAR including bi-epitope CAR) having one or more anti-BCMA single-domain antibodies. Further provided are engineered immune effector cells (such as T cells) having the chimeric antigen receptors. Pharmaceutical compositions, kits and methods of treating cancer are also provided.

Abstract: The disclosure provides a controller, a method for adjusting packet flow rule, and a network communication system. The method includes: receiving, by a controller, a health status of a first port and a health status of a second port of each of a plurality of hosts in the network communication system; adjusting a packet flow rule of each of the hosts based on the health status of the first port and the health status of the second port of each of the hosts; and transmitting the adjusted packet flow rule of each of the hosts to each of the corresponding hosts to control each of the hosts to transceive a packet according to the corresponding packet flow rule.

Abstract: A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.

Abstract: A cam rotary engine power system of internal combustion type, making use of the cam and a plurality of cam followers to form cam mechanisms, and forming a plurality of circumferential distributed sealing working chambers with the inner-cavity-member, the external-rotating-surface-member and the end-cover-member. The volume of those chambers change with the relative rotation of the cam and the cam followers, in which the intake, compression, power and exhaust processes of the Otto cycle are completed by valve coordination. The chemical energy produced by gas combustion is directly converted into the mechanical energy of the rotor in the form of fixed axis rotation. The power system does not set the crankshaft of piston engine, and the high pressure gas directly drives the rotor to rotate and output power. The structure of this power system is relatively simple and its parameters can be adjusted in a wide range.

Abstract: The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.

Abstract: A directional microphone including a casing and a microphone element is provided. The casing has a front sound reception hole and at least one rear sound reception hole. The microphone element is disposed in the casing. The microphone element has a front sound reception surface and a rear sound reception surface. The front sound reception hole is located on a same side as the front sound reception surface, and the front sound reception hole is aligned with the front sound reception surface. The rear sound reception hole is located on a same side as the rear sound reception surface, but the rear sound reception hole and the rear sound reception surface are misaligned with each other.

Abstract: An apparatus including a first member including a first electrode, a second member coupled to the first member about an axis, including a second electrode, and a surface layer between the first electrode and the second electrode, the second member is rotatable with respect to the axis by an energy flow to change triboelectric charges on the electrodes, and to affect a flow of electrons between the electrodes. A self-powered sensor for detecting a chemical including a generator having an electrode, and a superhydrophobic surface layer for receiving an energy flow carrying triboelectric charges, the surface layer includes a TiO2 layer with nanostructures, and a power indicator indicative of whether the chemical is present based on power output of the triboelectric generator, the energy flow is a solution flow, the solution comprising the chemical and water, and the chemical removes at least one triboelectric charge from the water.

Abstract: The present invention provides a method of arranging a huge amount of chips, comprising the sequential steps: a providing step of providing a substrate and a plurality of chips; a spreading step of spreading a plurality of chips on the surface of the substrate; a tilting step of tilting the substrate by an angle to slide down the plurality of chips along the surface of the substrate so that the trapping stoppers trap the plurality of chips respectively in such a manner that the blocked chips are placed in the chip placing areas respectively; an adhering step of adhering, onto the chip placing areas, the chips with the working surface upward; and a removing step of removing, from the substrate, the chips which are not adhered onto the chip placing areas. A huge number of chips can be transferred efficiently by the method of the present invention.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a metal gate electrode structure and an insulating layer over the semiconductor substrate. The insulating layer surrounds the metal gate electrode structure. The method includes nitrifying a first top portion of the metal gate electrode structure to form a metal nitride layer over the metal gate electrode structure.

Abstract: Relating to an opioid receptor agonist (1S,4S)-4-ethoxy-N-(2-((R)-9-(pyridin-2-yl)-6-oxaspiro[4.5]deca-9-yl)ethyl)-1,2,3,4-tetrahydronaphthalen-1-amine fumarate salt, a fumarate salt crystal form I thereof, and a preparation method and an application therefor.

Abstract: The present invention relates to novel crystalline forms of compound (I), (3-Amino-oxetan-3-ylmethyl)-[2-(5,5-dioxo-5,6,7,9-tetrahydro-5lambda*6*-thia-8-aza-benzocyclohepten-8-yl)-6-methyl-quinazolin-4-yl]-amine and pharmaceutical compositions comprising the crystalline forms thereof disclosed herein, which may be used for the treatment or prophylaxis of a viral disease in a patient relating to respiratory syncytial virus (RSV) infection or a disease caused by RSV infection.

Abstract: A method and user equipment for transmission slot blank. The method includes, at the user equipment (“UE”), establishing a voice call, determining whether the voice call currently comprises a silence period, blanking at least two slots of a control frame according to a predetermined pattern, wherein the predetermined pattern includes at least one slot that is not blanked between the at least two slots that are blanked, and transmitting the control frame.

Abstract: The present invention provides a method for the preparation of an insensitive high enthalpy explosive Dihydroxylammonium 5,5?-bistetrazole-1,1?-diolate (TKX-50) in the presence of N,N-dimethylformamide, N,N-dimethylacetamide, or N-Methyl-2-pyrrolidone as a solvent via a four-step, one-pot reaction route to obtain a final product after four reaction steps. The more dangerous intermediate diazidoglyoxime may be solved by the one-pot method without the need of isolation. Further, the cyclization reaction is carried out in the presence of dropwisely added concentrated sulfuric acid to replace hydrochloric gas so no hydrochloric gas generator is needed to greatly reduce the amount of waste acid so as to effectively reduce the cost by avoiding using hydrochloric gas steel cylinders which require much safety equipment.

Abstract: A security tag including: a housing and circuitry which detects a locked state, the circuitry configured to execute a signal transfer function responsive to interchanging a pin and a lanyard in the circuitry, and/or the housing including a replaceable battery compartment locked by inserting either the pin or the lanyard into a lock mechanism which differently secures the pin and the lanyard; and an alarm, in communication with the circuitry, triggered by an undisarmed breach of the locked state.

Abstract: Adaptive multiplexing and transmit/receive diversity. A wireless device may include multiple antennas. A first set of antennas may be used for communication. One or more trigger conditions may be determined, and additional antennas may be activated for measurement. Based on the measurement(s), a second set of antennas may be selected and used for communication.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.