Abstract: A local apparatus is configured to perform resolution on a conflict field generated by code files of a plurality of versions, and send a conflict resolution result to the service apparatus. The conflict field includes at least one conflict block, and the conflict resolution result includes at least one of a resolution result of a local resolvable conflict block and an identifier of a local irresolvable conflict block. The remote apparatus is configured to obtain the conflict resolution result from the service apparatus, generate a collaborative processing window based on the conflict resolution result, and receive a result of processing the conflict resolution result by a remote user based on the collaborative processing window.

Abstract: A method for identifying video signal source is provided. The method includes the following steps. A first identification code is assigned to a first transmitter device by a receiver control unit of a receiver device. A first video data is transmitted by the first transmitter device. The first video data and a first identification image corresponding to the first identification code are combined as a first combined video data by the receiver control unit. The first combined video data is outputted to a display device by the receiver control unit.

Abstract: Intelligent process management is provided. A start time is determined for an additional process to be run on a worker node within a duration of a sleep state of a task of a process already running on the worker node by adding a first defined buffer time to a determined start time of the sleep state of the task. A backfill time is determined for the additional process by subtracting a second defined buffer time from a determined end time of the sleep state of the task. A scheduling plan is generated for the additional process based on the start time and the backfill time corresponding to the additional process. The scheduling plan is executed to run the additional process on the worker node according to the start time and the backfill time corresponding to the additional process.

Abstract: A semiconductor device includes: a substrate, including an upper surface and a first to a fourth side surfaces; wherein the upper surface includes a first edge connecting the first side surface and a second edge opposite to the first edge and connecting the second side surface; a first modified trace formed on the first side surface; and a semiconductor stack formed on the upper surface, including a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge; wherein a shortest distance between the first edge and the fifth edge is S1 ?m, and a shortest distance between the second edge and the sixth edge is S2 ?m; wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of ?1 with the vertical direction, the second side surface forms a second acute angle with a degree of ?2 with the vertical dire

Abstract: A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, a gold layer, and an electroplated copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

Abstract: A high-frequency composite impactor including a high-frequency axial and a torsional impact assembly is disclosed. The high-frequency axial impact assembly includes an upper self-excited oscillation cavity, a lower self-excited oscillation cavity, an adjustment block and a lock nut. The torsional impact assembly includes an upper end cover, a reversing switch, a pendulum, a lower shell, a lower end cover, a nozzle, a connecting block and a retaining ring. The high-frequency axial impact assembly converts the flowing drilling fluid into a pulsed jet to achieve a high-frequency axial impact. The torsional impact assembly enables a torsional impact through a shunt, and finally enables a high-frequency composite impact, which can effectively reduce the stick-slip of the drill string, jump drilling and other downhole accidents. By reducing the friction between the drill string and the borehole wall, the impactor can reduce WOB loss, increase the ROP, and improve the drilling efficiency.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: A rubber resin material with high dielectric constant and a metal substrate with high dielectric constant are provided. The rubber resin material with high dielectric constant includes a rubber resin composition with high dielectric constant and inorganic fillers. The rubber resin composition with high dielectric constant includes: 40 wt % to 70 wt % of a liquid rubber, 10 wt % to 30 wt % of a polyphenylene ether resin, and 20 wt % to 40 wt % of a crosslinker. A molecular weight of the liquid rubber ranges from 800 g/mol to 6000 g/mol. A dielectric constant of the rubber resin material with high dielectric constant is higher than or equal to 2.0.

Abstract: The present disclosure provides a short-process high-performance forming method of a high-strength aluminum alloy, and use thereof. In the present disclosure, pre-hardening treatment is conducted on an obtained W-temper aluminum alloy sheet blank after a solution treatment and quenching, to obtain a pre-hardened aluminum alloy sheet blank for batch supply. The pre-hardened aluminum alloy sheet blank is subjected to plastic forming, to obtain a component with satisfactory performances. After the pre-hardening treatment, a high-strength aluminum alloy sheet blank forms a GPII zone that is completely coherent with a matrix, and has a room-temperature formability exceeding that off traditional soft sheet blank. Moreover, the GPII zones interact with dislocations during the forming, resulting in planar slips. In this way, large-scale dynamic recovery is more effectively suppressed, thus enhancing a work hardening ability of a formed component.

Abstract: A host circuit includes a first clock generator, a first input output interface, a first communication interface, and a first processor. The first clock generator generates a first clock signal. The first processor outputs a trigger signal through the first input output interface, records a first clock count of the first clock generator at the same time, and outputs the first clock count through the first communication interface. A slave circuit includes a second clock generator, a second input output interface, a second communication interface, and a second processor. The second clock generator generates a second clock signal. When receiving the trigger signal, the second processor records a second clock count of the second clock generator, and calculates a time difference between the first clock signal and the second clock signal according to the first clock count and the second clock count.

Abstract: The present invention relates to an immunomodulating peptide comprising an amino acid sequence as shown in SEQ ID NO:1. The present invention also discloses use of the immunomodulating peptide in the preparation of a drug or skin care product for promoting skin wound healing. The present invention provides a new immunomodulating peptide and use thereof, and discloses the mechanism of action of the immunomodulating peptide in promoting wound healing. The immunomodulating peptide is useful as a wounding healing polypeptide template.

Abstract: A test kit for testing a device under test (DUT) includes a socket structure for containing the DUT, and a plunger assembly detachably coupled with the socket structure. The plunger assembly includes a multi-layered structure having at least an interposer substrate sandwiched by a top socket and a nest.

Abstract: A low noise device includes an isolation feature in a substrate. The low noise device further includes a gate stack over a channel in the substrate, wherein the isolation feature is adjacent to the channel. The low noise device further includes a spacer surrounding a portion of the gate stack, wherein an edge of the gate stack is spaced from an edge of the isolation feature adjacent to the spacer by a distance ranging from a minimum spacing distance to about 0.3 microns (?m).

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a photoresist layer over a substrate. The photoresist layer includes a polymer, a photoacid initiator and a crosslinker containing at least two crosslinking sites. The photoresist layer is then cured to crosslink the polymer, thereby forming a crosslinked polymer. Next, the photoresist layer is exposed to a radiation. An acid produced from exposure of the photoacid generator de-crosslinks the crosslinked polymer in exposed portions of the photoresist layer. The exposed portions of the photoresist layer are subsequently removed to form a patterned photoresist layer.

Abstract: A release device, system, and method, and a therapeutic device are provided. The release device (100) comprises a power supply assembly (110), a current detector (120), a first timer (130) and a control unit (140). The power consumption of the release circuit and the accumulated time duration over which the current of the release circuit are less than a predetermined current value are used as a determination index of whether the release process is successful or not. Thus, misjudgment caused by current fluctuation can be avoided, and determination accuracy is improved. At the same time, the release system uses a self-loop structure, and therefore no electric discharge needle or electrode need be inserted into the body of a patient during actual use of the device, reducing the suffering of the patient.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.