Abstract: The present invention relates to an immunomodulating peptide comprising an amino acid sequence as shown in SEQ ID NO:1. The present invention also discloses use of the immunomodulating peptide in the preparation of a drug or skin care product for promoting skin wound healing. The present invention provides a new immunomodulating peptide and use thereof, and discloses the mechanism of action of the immunomodulating peptide in promoting wound healing. The immunomodulating peptide is useful as a wounding healing polypeptide template.

Abstract: A low noise device includes an isolation feature in a substrate. The low noise device further includes a gate stack over a channel in the substrate, wherein the isolation feature is adjacent to the channel. The low noise device further includes a spacer surrounding a portion of the gate stack, wherein an edge of the gate stack is spaced from an edge of the isolation feature adjacent to the spacer by a distance ranging from a minimum spacing distance to about 0.3 microns (?m).

Abstract: Disclosed is a data transfer system capable of accelerating data transmission between two chips. The data transfer system includes: a master system-on-a-chip (SoC) including a master transmission circular buffer and a master reception circular buffer; and a slave SoC including a slave reception circular buffer and a slave transmission circular buffer. The slave/master reception circular buffer is a duplicate of the master/slave transmission circular buffer; accordingly, the write pointers of the two corresponding buffers are substantially synchronous and the read pointers of the two corresponding buffers are substantially synchronous as well. In light of the above, the read and write operations of the master/slave transmission circular buffer can be treated as the read and write operations of the slave/master reception circular buffer; therefore some conventional data reproducing procedure(s) for the data transmission can be omitted and the data transmission is accelerated.

Abstract: A test kit for testing a device under test (DUT) includes a socket structure for containing the DUT. The DUT includes an antenna and radiates a RF signal. The test kit further includes a reflector having a lower surface. The RF signal emitted from the antenna of the DUT is reflected by the reflector and a reflected RF signal is received by the antenna of the DUT.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A semiconductor device includes a substrate and an isolation feature. The isolation feature includes a first portion in the substrate, and a second portion extending along a top surface of the substrate, wherein a bottom surface of the second portion is below the top surface of the substrate. The semiconductor device further includes a gate structure over the substrate, wherein the gate structure extends along a top surface of the second portion of the isolation feature.

Abstract: The invention, in part, relates to ChIA-Drop methods, which comprise methods of drop-based sequencing.

Abstract: A method of making a semiconductor device includes etching a substrate to define a trench in a substrate, wherein the trench is adjacent to an active region in the substrate, and etching the substrate includes patterning a mask. The method further includes partially removing the mask to expose a first portion of the active region, wherein the first portion extends a first distance from the trench. The method further includes depositing a dielectric material to fill the trench and cover the first portion of the active region. The method further includes removing the mask, wherein the removing of the mask includes maintaining the dielectric material covering the first portion of the active region. The method further includes forming a gate structure over the active region and over the dielectric material.

Abstract: A water purification apparatus includes a water inlet; a medicine mixing device in fluid communication with the water inlet; and a water outlet interconnected to the medicine mixing device and a dental treatment center. The medicine mixing device includes a medicine storage for storing antiseptic solution, a mixing unit interconnected to the water inlet, the water outlet, and the medicine storage, and a controller interconnected to the water inlet and the medicine storage. The controller includes a sensor and a microprocessor. The controller sends the antiseptic solution from the medicine storage to the mixing unit and controls a volume of water flowing from the water inlet to the mixing unit. The microprocessor instructs the controller to control a volume of the antiseptic solution supplied from the medicine storage to the mixing unit based on a signal sensed by the sensor.

Abstract: Methods, computer program products, and systems are presented. The method computer program products, and systems can include, for instance: receiving, by a Network Virtualization Edge (NVE) of a first virtual network (VN), a multicast packet from a virtual machine (VM) of the first virtual network (VN); determining, by the NVE, whether the NVE currently supports forwarding the multicast packet to a second NVE of a second virtual network (VN), the second virtual network (VN) being logically separated from the first virtual network (VN); responsively to determining that the NVE currently supports forwarding the multicast packet to a second NVE of a second virtual network (VN) forwarding, by the NVE, the multicast packet to the second NVE.

Abstract: Methods of forming an EDNMOS with polysilicon fingers between a gate and a nitride spacer and the resulting devices are provided. Embodiments include forming a polysilicon layer upon a GOX layer over a substrate; forming a gate and plurality of fingers and a gate and plurality of fingers through the polysilicon layer down the GOX layer; forming an oxide layer over the GOX layer and sidewalls of the gates and fingers; forming a nitride layer over the oxide layer; removing portions of the nitride and oxide layers down to the polysilicon and GOX layers to form nitride spacers; and forming S/D regions laterally separated in the substrate, each S/D region adjacent to a nitride spacer.

Abstract: A water purification apparatus includes a water inlet; a medicine mixing device in fluid communication with the water inlet; and a water outlet interconnected to the medicine mixing device and a dental treatment center. The medicine mixing device includes a medicine storage for storing antiseptic solution, a mixing unit interconnected to the water inlet, the water outlet, and the medicine storage, and a controller interconnected to the water inlet and the medicine storage. The controller includes a sensor and a microprocessor. The controller sends the antiseptic solution from the medicine storage to the mixing unit and controls a volume of water flowing from the water inlet to the mixing unit. The microprocessor instructs the controller to control a volume of the antiseptic solution supplied from the medicine storage to the mixing unit based on a signal sensed by the sensor.

Abstract: A method of making a semiconductor device includes etching a substrate to define a trench in a substrate, wherein the trench is adjacent to an active region in the substrate, and etching the substrate includes patterning a mask. The method further includes partially removing the mask to expose a first portion of the active region, wherein the first portion extends a first distance from the trench. The method further includes depositing a dielectric material to fill the trench and cover the first portion of the active region. The method further includes removing the mask, wherein the removing of the mask includes maintaining the dielectric material covering the first portion of the active region. The method further includes forming a gate structure over the active region and over the dielectric material.

Abstract: A semiconductor device includes a substrate and an isolation feature. The isolation feature includes a first portion in the substrate, and a second portion extending along a top surface of the substrate, wherein a bottom surface of the second portion is below the top surface of the substrate. The semiconductor device further includes a gate structure over the substrate, wherein the gate structure extends along a top surface of the second portion of the isolation feature.

Abstract: Obtaining mobile terminal security information based on a cloud service includes synchronizing mobile terminal information with a cloud, receiving security information sent by the cloud, and performing corresponding security processing according to the security information. The security information is generated when the cloud determines that a security risk exists in a mobile terminal. The generated security information is sent by the cloud to the mobile terminal. Whether the security risk exists in the mobile terminal is obtained by the cloud through determining with reference to the mobile terminal information and latest security data of the cloud, and the determining step is triggered by updating of security data of the cloud.

Abstract: Methods, computer program products, and systems are presented. The method computer program products, and systems can include, for instance: receiving, by a Network Virtualization Edge (NVE) of a first virtual network (VN), a multicast packet from a virtual machine (VM) of the first virtual network (VN); determining, by the NVE, whether the NVE currently supports forwarding the multicast packet to a second NVE of a second virtual network (VN), the second virtual network (VN) being logically separated from the first virtual network (VN); responsively to determining that the NVE currently supports forwarding the multicast packet to a second NVE of a second virtual network (VN) forwarding, by the NVE, the multicast packet to the second NVE.

Abstract: A semiconductor device includes a substrate, wherein the substrate includes a channel region. The semiconductor device further includes an isolation feature in the substrate. The isolation feature includes a first portion in the substrate, and a second portion extending along a top surface of the substrate. The second portion partially covers the channel region. The semiconductor device further includes a gate structure over the substrate, wherein the gate structure partially covers the second portion of the isolation feature.