Abstract: The present disclosure provides LED structures and manufacturing methods thereof, LED devices and manufacturing methods thereof. The LED structure includes a substrate, light emitting units, first electrodes and second electrodes, and the substrate is provided with grooves with different depths. A light emitting unit is disposed in each of the grooves and includes a first semiconductor layer, a light emitting layer on the first semiconductor layer and a second semiconductor layer on the light emitting layer; light emitting layers in grooves with different depths emit different colors. A first electrode and a second electrode in each groove, the first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the second semiconductor layer.

Abstract: A transcription of audio speech included in electronic content associated with a meeting is created by an ASR model trained on speech-to-text data. The transcription is post-processed by modifying text included in the transcription, for example, by modifying punctuation, grammar, or formatting introduced by the ASR model and by changing or omitting one or more words that were included in both the audio speech and the transcription. After the transcription is post-processed, output based on the post-processed transcription is generated in the form of a meeting summary and/or template.

Abstract: This invention pertains to mutant Cas9 nucleic acids and proteins for use in CRISPR/Cas endonuclease systems, and their methods of use. In particular, the invention pertains to an isolated mutant Cas9 protein, wherein the isolated mutant Cas9 protein is active in a CRISPR/Cas endonuclease system, wherein the CRISPR/Cas endonuclease system displays increased on-target editing activity relative to a wild-type CRISPR/Cas endonuclease system. The invention also includes isolated nucleic acids encoding mutant Cas9 proteins, ribonucleoprotein complexes and CRSPR/Cas endonuclease systems having mutant Cas9 proteins that display increased on-target editing activity relative to a wild-type CRISPR/Cas endonuclease system.

Abstract: The present disclosure concerns polynucleotides and amino acids of Acidaminococcus sp. Cas12a (Cpf1) and methods for their use for genome editing in eukaryotic cells.

Abstract: The present invention pertains to ubiquitin polypeptide variants (Ubvs) having improved affinity for 53BP1 relative to 53 ubiquitin polypeptide or i53 ubiquitin polypeptide, wherein the resultant interaction between the Ubvs and 53BP1 promotes increased homology directed repair of DNA double-strand break sites. Methods of suppressing 53BP1 recruitment to DNA double-strand break sites, increasing homologous recombination, increasing gene targeting, and editing a gene in a cell using a CRISPR system are provided with the Ubvs. Compositions and kits of Ubvs are also provided.

Abstract: Provided herein are bacterial compositions that are useful for treating and preventing complications and side effects associated with a disease or disorder, such as those associated with dysbiosis of a gastrointestinal tract. The bacterial compositions disclosed herein are designed to exhibit one or more functional features that are useful for the treatment of such diseases and disorders.

Abstract: An ammonium complex system-based method for separating and purifying lead, zinc, cadmium, and copper, comprising the following steps: a zinc-containing raw material is leached using a leach solution to produce a leached solution; a filtrate and a filter residue are produced by filtration; the filtrate is mixed with metal lead to displace copper, undergoes a solid-liquid separation to produce a first separated liquid, is mixed with metal cadmium to displace lead, undergoes a solid-liquid separation to produce a second separated liquid, is mixed with metal zinc to displace cadmium, and undergoes a solid-liquid separation to produce a third separated liquid; and, the third separated liquid is electrolyzed to produce metal zinc, and an electrolytic solution is returned to the leaching step.

Abstract: The present disclosure discloses an engineering machinery equipment, and a method, system, and storage medium for operation trajectory planning thereof, and relates to the field of artificial intelligence, automatic control, and engineering machinery technologies.

Abstract: Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.

Abstract: Disclosed is 500-MPa low-yield-ratio weather-resistant bridge steel and a manufacturing method therefor; the weather-resistant bridge steel includes the following components in percentage by mass: C: 0.04%-0.09%, Si: 0.15%-0.30%, Mn: 1.40%-1.50%, P: 0.009%-0.015%, S: ?0.002%, Nb: 0.020%-0.050%, Ti: 0.010%-0.020%, V: 0.010%-0.030%, Cu: 0.30%-0.40%, Ni: 0.30%-0.45%, Cr: 0.45%-0.60%, Mo: 0.08%-0.15%, Alt: 0.02%-0.04%, and the balance Fe and inevitable impurities; through scientific component designing and a matched manufacturing method combining controlled rolling and cooling and tempering, the weather-resistant bridge steel has a low yield ratio, high low-temperature toughness and high elongation.

Abstract: Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.

Abstract: A transcription of audio speech included in electronic content associated with a meeting is created by an ASR model trained on speech-to-text data. The transcription is post-processed by modifying text included in the transcription, for example, by modifying punctuation, grammar, or formatting introduced by the ASR model and by changing or omitting one or more words that were included in both the audio speech and the transcription. After the transcription is post-processed, output based on the post-processed transcription is generated in the form of a meeting summary and/or template.

Abstract: A method for processing breast tissue image data includes obtaining image data of a patient's breast tissue, processing the image data to generate a set of image slices, the image slices collectively depicting the patient's breast tissue; feeding image slices of the set through each of a plurality of object-recognizing modules, each of the object-recognizing modules being configured to recognize a respective type of object that may be present in the image slices; combining objects recognized by the respective object-recognizing modules to generate a synthesized image of the patient's breast tissue; and displaying the synthesized image.

Abstract: The invention includes a method including the steps of obtaining a plurality of images, each of the images in the plurality having at least one corresponding region, generating a merged image, the merged image also having the corresponding region. The step of generating includes selecting an image source from the plurality of images to source image data for the corresponding region in the merged image by comparing attributes of the corresponding regions of the plurality of images to identify the image source having preferred attributes.

Abstract: Autonomous excavator has developed rapidly in recent years because of a shortage of labor and hazardous working environments for operating excavators. Presented herein are embodiments of a novel hierarchical planning system for autonomous machines, such as excavators. In one or more embodiments, the overall planning system comprises a high-level task planner for task division and base movement planning, and general sub-task planners with motion primitives, which include both arm and base movement in the case of an excavator. Using embodiments of the system architecture, experiments were performed for the trench and pile removal tasks in the real world and for the large-scale material loading tasks in a simulation environment. The results show that the system architecture embodiments and planner method embodiments generate effective task and motion plans that perform well in autonomous excavation.

Abstract: The present invention relates to a compound of Formula (I)/(II) or pharmaceutically acceptable salts thereof. In Formula (I), Rh, Rg, Rf, m, Re, Rd, Ra, Rb, and Rc are as defined in the description. The present invention further relates to a pharmaceutical composition comprising the compound of Formula (I)/(II) or pharmaceutically acceptable salts thereof, and use of the compound of Formula (I)/(II) or the pharmaceutical composition in the manufacture of a medicament for treating inflammations such as rheumatoid arthritis.

Abstract: A resistive random access memory array and an operation method therefor, and a resistive random access memory circuit. The resistive random access memory array includes multiple memory cells, multiple bit lines, multiple word lines, multiple block selection circuits, and multiple initialization circuits. Each memory cell includes a resistive random access memory device and a switching device. The multiple memory cells are arranged into multiple memory cell rows and multiple memory cell columns in a first direction and a second direction, and the multiple bit lines and the multiple memory cell columns are connected in one-to-one correspondence. Each block selection circuit is configured to write a read/write operation voltage into a correspondingly connected bit line in response to a block selection voltage. Each initialization circuit is configured to write an initialization operation voltage to a correspondingly connected bit line in response to an initialization control voltage.

Abstract: This application provides semiconductor structures and methods of manufacturing the same. A semiconductor structure includes: an N-type semiconductor layer, a light emitting layer, and a P-type ion doped layer that are disposed from bottom to up, wherein the P-type ion doped layer comprises an activated region and non-activated regions located on two sides of the activated region, P-type doping ions in the activated region are activated, and P-type doping ions in the non-activated region are passivated. The layout of the activated region and the non-activated regions makes an LED include: a high-efficiency light emitting region and light emitting obstacle regions located on two sides of the high-efficiency light emitting region.

Abstract: Disclosed are an optoelectronic device and a preparation method thereof. The optoelectronic device includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The conductivity type of the first semiconductor layer is opposite to that of the second semiconductor layer, and the second semiconductor layer is provided with a layer of nano-diamond structure, and the nano-diamond structure has the same conductivity type as the second semiconductor layer. The method for preparing the optoelectronic device is used to make the optoelectronic device. In the present application, by providing a layer of nano-diamond structure in the second semiconductor layer, the absorption of UV light emitted by the active layer can be effectively avoided, and the beneficial effect of greatly improving the light extraction efficiency of the UV LED can be achieved.

Abstract: Provided is a method of manufacturing a semiconductor structure. The method includes: providing a substrate, where the substrate includes a plurality of component areas and peripheral areas surrounding the plurality of component areas; next, forming a sacrificial layer on each of the plurality of component areas, and forming a semiconductor active layer on the sacrificial layer and the substrate not covered with the sacrificial layer; patterning the semiconductor active layer to remove the semiconductor active layer on the peripheral areas so as to form a plurality of annular grooves which expose the sacrificial layer, such that the semiconductor active layer on each of the plurality of component areas is independent; afterwards, removing the sacrificial layer on each of the plurality of component areas through the annular grooves, such that the independent semiconductor active layer is separated from the substrate, where the independent semiconductor active layer forms a semiconductor structure.