Abstract: The present application discloses a semiconductor structure including: a base, the base being made of an amorphous material and including at least one trench; a monocrystalline layer, at least part of the monocrystalline layer being provided in the trench; and an epitaxial structure layer, located on the side of the monocrystalline layer away from the base. The semiconductor structure disclosed in the present application includes the monocrystalline layer formed in the at least one trench of the base, and an amorphous material with a thermal expansion coefficient similar to that of the monocrystalline layer is selected as the base, which can relieve the tensile stress generated by the monocrystalline layer during the epitaxial process. At the same time, the epitaxial structure layer is grown on an independent monocrystalline layer, and the size is small, which alleviates the problem of semiconductor film cracking on the large-size substrate.

Abstract: A solid state circuit breaker has both solid state electronics and a physical switch. The solid state circuit breaker facilitates power measuring for end loads connected to a panel board circuit, e.g. receptacles, lighting, etc., over current protection, and disconnection all within one device. The solid state circuit breaker can be used at 100% of its rated capacity as opposed to 80% code-mandated limitation for thermal magnetic circuit breakers. The solid state circuit breaker also can provide power/current data (real-time) without the need of an additional device. The solid state circuit breaker further facilitates electronic, i.e. remote, opening, closing, and current limiting for demand response or load shedding.

Abstract: Described herein are CAS12A mutants from Lachnospiraceae bacterium and methods for use thereof. These mutants have enhanced DNA cleavage activities at non-canonical TTTT protospacer adjacent motifs (PAM) compared to the wild-type enzyme.

Abstract: A light emitting device includes: a first substrate; a light emitting structure layer located on the first substrate; and an insertion layer located on the light emitting structure layer, a surface, away from the light emitting structure layer, of the insertion layer is a roughened surface, and the insertion layer has a protective effect on the light emitting structure layer. In the light emitting device provided by the present disclosure, the surface, away from the light emitting structure layer, of the insertion layer is the roughened surface, and the insertion layer has the protective effect on the light emitting structure layer during a peeling off process, which solves problems of reduced yield and reduced light extraction efficiency of a light emitting device.

Abstract: Disclosed are a semiconductor structure and a method for manufacturing a semiconductor structure, the method includes: forming a first transition layer, a protection layer and an active structure layer sequentially epitaxially on a side of a growth substrate, where a surface, away from the growth substrate, of the first transition layer is a two-dimensional flat surface; on a first plane, an orthographic projection of the active structure layer is at least partially covered by an orthographic projection of the protection layer, and the first plane is perpendicular to an arrangement direction of the protection layer and the active structure layer; detaching the growth substrate by a laser lift-off process, to make the epitaxial layer transferred to a transfer substrate; etching the first transition layer up to the protection layer, to make a surface, away from the active structure layer, of the protection layer to be a planarization surface.

Abstract: Disclosed is a semiconductor structure, including a substrate; a V-shaped groove layer, a V-shaped groove enlargement layer and a semiconductor epitaxial layer stacked from bottom to top; a first V-shaped groove arranged on a surface of the V-shaped groove layer close to the V-shaped groove enlargement layer; a second V-shaped groove arranged on a surface of the V-shaped groove enlargement layer close to the semiconductor epitaxial layer, where a size of the second V-shaped groove is greater than a size of the first V-shaped groove In the present disclosure, a lateral epitaxy effect of the V-shaped groove enlargement layer and the semiconductor epitaxial layer is realized for two times, which makes dislocation fully bend, effectively improving crystal quality. Meanwhile, the first V-shaped groove and the second V-shaped groove are self-formed during an epitaxial growth process, which greatly reduces preparation cost and improves preparation efficiency.

Abstract: A composite substrate, a photoelectric device and a preparation method therefor. The composite substrate comprises a base substrate and a nano-diamond structure located on the base substrate; the nano-diamond structure comprises a plurality of nano-diamond protrusions arranged at intervals, and a gap is provided between two adjacent nano-diamond protrusions. The photoelectric device comprises the composite substrate, and further comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked on the composite substrate; the first semiconductor layer comprises protruding portions and a flat portion sequentially stacked in the vertical direction, the protruding portions are in the gaps and correspond one-to-one to the gaps, and the flat portion is located on the protruding portions and the nano-diamond structure. The preparation method for the photoelectric device is used for manufacturing the photoelectric device.

Abstract: Disclosed are a light-emitting chip, a manufacturing method thereof and an electronic device. The light-emitting chip includes a first substrate; and at least one reflector and a light-emitting pixel layer sequentially located on the first substrate. The light-emitting pixel layer includes at least one light-emitting pixel. The reflector is arranged corresponding to the light-emitting pixel. A first surface, close to the light-emitting pixel, of the reflector is a bowl-shaped surface. The bowl-shaped surface is concave in a direction close to the first substrate. The reflector is configured to reflect light emitted by a corresponding light-emitting pixel and adjust an emission direction and/or an emission angle of the light, so that the light exit rate of the light-emitting chip can be improved, and the light-emitting brightness of the light-emitting chip and electronic device can be further improved.

Abstract: Disclosed are a micro light-emitting diode chip, a manufacturing method therefor, and an electronic device. The micro light-emitting diode chip includes: a substrate; a plurality of light-emitting units, where a light-emitting unit is located on a side of the substrate, the light-emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence, the first semiconductor layer is located on a side, away from the substrate, of the second semiconductor layer, and the light-emitting unit further includes a reflective sidewall, which constitutes a sidewall of the active layer, the second semiconductor layer and at least a part of the first semiconductor layer; and a blocking portion, where at least a part of the blocking portion is located between first semiconductor layers of two of the light-emitting units.

Abstract: A semiconductor structure includes: a stacked structure, including one stacked structure unit or a plurality of stacked structure units disposed along a horizontal direction, where each of the stacked structure units includes a plurality of stacked island structures separated from each other along the horizontal direction; and an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially laminated on the stacked structure. In the present disclosure, by providing the stacked structure, the light-emitting efficiency of the semiconductor device can be improved.

Abstract: The present application provides a semiconductor structure and a manufacturing method therefor, and a light-emitting device and a manufacturing method therefor. The semiconductor structure includes a substrate, a first semiconductor layer, an isolation layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The second semiconductor layer is a conductive DBR structure. The first semiconductor layer includes a flat portion, a first protrusion and a second protrusion stacked sequentially in a vertical direction, the second protrusions correspond one-to-one to the first through-holes, and the second protrusions are arranged at intervals, and the side surface of the second protrusions are beveled. The active layer, the second semiconductor layer, and the first electrode are provided on the second protrusions of the first semiconductor layer stacked in sequence.

Abstract: The present disclosure provides a full-color LED structure, a full-color LED structure unit, and a method for manufacturing the same. Different wavelengths of light emitted from the first sub-region, the second sub-region and the third sub-region of the light-emitting layer are achieved by controlling different surface dimensions of the bottom wall and the side wall of the first trench or the top wall of the first semiconductor layer. The above process is simple and can form full-color LED structure units during a single epitaxial growth process of the light-emitting layer, such that the size of the full-color LED is reduced, the cost is reduced, the service life is extended, and the reliability is improved.

Abstract: The disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first group III nitride epitaxial layer disposed on a support substrate, a silicon substrate, a bonding layer and a second group III nitride epitaxial layer; wherein the first group III nitride epitaxial layer is bonded to the silicon substrate by the bonding layer; through-silicon-vias are formed in the silicon substrate, and first through-holes are formed in the bonding layer, wherein the through-silicon-vias communicate with the first through-holes; and the second group III nitride epitaxial layer is disposed within the first through-holes and the through-silicon-vias and on the silicon substrate, wherein the second group III nitride epitaxial layer is coupled to the first group III nitride epitaxial layer.

Abstract: Disclosed are a light emitting device and a method for manufacturing a light emitting device. The light emitting device according to the present application may be formed by an epitaxial growth process. In addition, the light emitting device according to the present application includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. Light emitting wavelengths of the first region, the second region and the third region are different by setting composition of the light emitting layer of the top walls of the plurality of protrusions, the side walls of the plurality of protrusions and the recessed region between the plurality of protrusions to be different, therefore, the light-emitting device may emit light of different wavelengths without using phosphors or quantum dots for wavelength conversion, thereby prolonging the lifespan of the light-emitting device and improving the reliability of the light-emitting device.

Abstract: A semiconductor light-emitting device and a manufacturing method for same. The manufacturing method for the semiconductor light-emitting device comprises: forming a dielectric layer on a substrate, the dielectric layer being provided with a plurality of openings exposing the substrate; performing epitaxial growth on the substrate using the dielectric layer as a mask to form first reflectors in the openings of the dielectric layer; growing a light-emitting structure on the side of each first reflector away from the substrate; and forming a second reflector on the side of the light-emitting structure away from the first reflector. The manufacturing process can be simplified.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure may include: a first epitaxial layer disposed on a substrate; a bonding layer disposed on the first epitaxial layer (where the bonding layer is provided with a first through-hole to expose the first epitaxial layer); a silicon substrate disposed on a side of the bonding layer away from the first epitaxial layer (where the first epitaxial layer is bonded to the silicon substrate by the bonding layer, the silicon substrate is provided with a through-silicon-via, and the through-silicon-via communicates with the first through-hole); a silicon device disposed on the silicon substrate; and a second epitaxial layer disposed on the first epitaxial layer exposed by the first through-hole. The present disclosure can improve the quality of the second epitaxial layer, and realize the integration of a silicon device and a III-V semiconductor device.

Abstract: Semiconductor structures and manufacturing methods thereof. A semiconductor structure includes: a first epitaxial layer; a bonding layer, on first epitaxial layer and provided with a first through-hole exposing first epitaxial layer; a silicon substrate, on a side of bonding layer away from first epitaxial layer, first epitaxial layer and the silicon substrate being bonded through the bonding layer; a through-silicon-via, in silicon substrate, through-silicon-via communicating with first through-hole; a second epitaxial layer, on first epitaxial layer exposed by first through-hole; a first electrode, on a side of first epitaxial layer away from bonding layer, and electrically coupled with first epitaxial layer; a second electrode, on a side of second epitaxial layer away from first epitaxial layer, and electrically coupled with second epitaxial layer.

Abstract: This invention pertains to mutant Cas9 nucleic acids and proteins for use in CRISPR/Cas endonuclease systems, and their methods of use. In particular, the invention pertains to an isolated mutant Cas9 protein, wherein the isolated mutant Cas9 protein is active in a CRISPR/Cas endonuclease system, wherein the CRISPR/Cas endonuclease system displays increased on-target editing activity relative to a wild-type CRISPR/Cas endonuclease system. The invention also includes isolated nucleic acids encoding mutant Cas9 proteins, ribonucleoprotein complexes and CRSPR/Cas endonuclease systems having mutant Cas9 proteins that display increased on-target editing activity relative to a wild-type CRISPR/Cas endonuclease system.

Abstract: The present disclosure provides LED structures and manufacturing methods thereof, LED devices and manufacturing methods thereof. The LED structure includes a substrate, light emitting units, first electrodes and second electrodes, and the substrate is provided with grooves with different depths. A light emitting unit is disposed in each of the grooves and includes a first semiconductor layer, a light emitting layer on the first semiconductor layer and a second semiconductor layer on the light emitting layer; light emitting layers in grooves with different depths emit different colors. A first electrode and a second electrode in each groove, the first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the second semiconductor layer.

Abstract: The present invention pertains to ubiquitin polypeptide variants (Ubvs) having improved affinity for 53BP1 relative to 53 ubiquitin polypeptide or i53 ubiquitin polypeptide, wherein the resultant interaction between the Ubvs and 53BP1 promotes increased homology directed repair of DNA double-strand break sites. Methods of suppressing 53BP1 recruitment to DNA double-strand break sites, increasing homologous recombination, increasing gene targeting, and editing a gene in a cell using a CRISPR system are provided with the Ubvs. Compositions and kits of Ubvs are also provided.