Patents by Inventor Liyang Zhang

Liyang Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8264272
    Abstract: A front-end module comprises a plurality of chips that includes first and second functional blocks and an interconnection circuit. The first functional block is formed using a first process type and includes a digital control circuit that generates a digital control signal in response to an external control signal from outside the front end module. The second functional block is formed using a second process type and includes a digitally controlled circuit controlled by the digital control signal generated by the first functional block. The second process type is different from the first process type. The interconnection circuit couples the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit. In one aspect, the first functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process.
    Type: Grant
    Filed: April 22, 2009
    Date of Patent: September 11, 2012
    Assignee: Microchip Technology Incorporated
    Inventors: Liyang Zhang, Pei-Ming Daniel Chow, Mau-Chung Frank Chang
  • Patent number: 7893684
    Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: February 22, 2011
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Bun Kobayashi, Liyang Zhang, Mau-Chung Frank Chang, Pei-Ming Daniel Chow
  • Publication number: 20110018624
    Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.
    Type: Application
    Filed: August 2, 2010
    Publication date: January 27, 2011
    Applicant: Silicon Storage Technology, Inc.
    Inventors: Bun Kobayashi, Liyang Zhang, Mau-Chung Frank Chang, Pei-Ming Daniel Chow
  • Patent number: 7852063
    Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.
    Type: Grant
    Filed: June 4, 2008
    Date of Patent: December 14, 2010
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Bun Kobayashi, Liyang Zhang, Mau-Chung Frank Chang, Pei-Ming Daniel Chow
  • Publication number: 20100271136
    Abstract: A front-end module comprises a plurality of chips that includes first and second functional blocks and an interconnection circuit. The first functional block is formed using a first process type and includes a digital control circuit that generates a digital control signal in response to an external control signal from outside the front end module. The second functional block is formed using a second process type and includes a digitally controlled circuit controlled by the digital control signal generated by the first functional block. The second process type is different from the first process type. The interconnection circuit couples the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit. In one aspect, the first functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process.
    Type: Application
    Filed: April 22, 2009
    Publication date: October 28, 2010
    Inventors: Liyang Zhang, Pei-Ming Daniel Chow, Mau-Chung Frank Chang
  • Publication number: 20090302830
    Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.
    Type: Application
    Filed: June 4, 2008
    Publication date: December 10, 2009
    Applicant: Silicon Storage Technology, Inc.
    Inventors: Bun Kobayashi, Liyang Zhang, Mau-Chung Frank Chang, Pei-Ming Daniel Chow
  • Patent number: 7569910
    Abstract: A semiconductor structure is fabricated with two different portions. The first portion forms a first transistor, while the second portion forms a second transistor. Notably, portions of the first transistor also a make up portions of the second transistor. That is, both the first transistor and the second transistor are made of portions of the same structure.
    Type: Grant
    Filed: August 30, 2006
    Date of Patent: August 4, 2009
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Mauchung (Frank) Chang, Peiming (Daniel) Chow, Liyang Zhang
  • Patent number: 7469133
    Abstract: RF power detector employing an envelope amplifier circuit and a current mirror circuit. The output of the current mirror circuit supplies a bias voltage for biasing the output of the envelope amplifier circuit. Furthermore, the output of the envelope amplifier circuit is fed back to the output of the current mirror circuit so as to reduce the magnitude of the bias signal according to the magnitude of the amplified RF signal envelope. In this manner, the overall gain of the RF power detector can be selectively reduced, resulting in an RF power detector having a more linearized dynamic range and greater ability to compensate for variation in gain caused by temperature.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: December 23, 2008
    Assignee: Silicon Storage Technology, Inc.
    Inventor: Liyang Zhang
  • Publication number: 20080054305
    Abstract: A semiconductor structure is fabricated with two different portions. The first portion forms a first transistor, while the second portion forms a second transistor. Notably, portions of the first transistor also a make up portions of the second transistor. That is, both the first transistor and the second transistor are made of portions of the same structure.
    Type: Application
    Filed: August 30, 2006
    Publication date: March 6, 2008
    Inventors: Mauchung (Frank) Chang, Peiming (Daniel) Chow, Liyang Zhang
  • Publication number: 20070249310
    Abstract: RF power detector employing an envelope amplifier circuit and a current mirror circuit. The output of the current mirror circuit supplies a bias voltage for biasing the output of the envelope amplifier circuit. Furthermore, the output of the envelope amplifier circuit is fed back to the output of the current mirror circuit so as to reduce the magnitude of the bias signal according to the magnitude of the amplified RF signal envelope. In this manner, the overall gain of the RF power detector can be selectively reduced, resulting in an RF power detector having a more linearized dynamic range and greater ability to compensate for variation in gain caused by temperature.
    Type: Application
    Filed: April 19, 2006
    Publication date: October 25, 2007
    Inventor: Liyang Zhang
  • Publication number: 20050213647
    Abstract: The present invention is a universal power line modem for any type of power line communication network. The main idea of the invention is that the functions of different kinds of power line networks (different protocols and modulation/demodulation methods) will be realized by software based on one general, standard and modularized hardware platform which is based on DSP chip or FPGA.
    Type: Application
    Filed: May 17, 2002
    Publication date: September 29, 2005
    Applicant: Agency for Science, Technology and Research
    Inventor: Liyang Zhang