Abstract: Coatings for implantable devices or endoluminal prosthesis, such as stents, are provided, including a method of forming the coatings. The coatings can be used for the delivery of an active ingredient or a combination of active ingredients.

Abstract: An active noise control system for controlling induction noise of an internal combustion engine having a speaker and a controller. The controller generates a control signal that drives the speaker, wherein the signal is based on at least one current vehicle operating condition. The signal is also based on a determination of a first sound pressure for each order of sound generated by the engine during a run up of the engine. In addition, the signal is based on a determination of a second sound pressure computed for each of a plurality of operating conditions of the engine, wherein the signal controls each of order of sound generated by the engine independently to drive the speaker to generate an audio output to control intake noise.

Abstract: A method and system for capturing and storing image data is disclosed. The imaging and information storage apparatus comprises an imaging device, an analog to digital converter, and a persistent or non-volatile memory store. The imaging device captures image data that is then forwarded to the analog to digital converter for conversion. The digital information is then stored within the persistent memory store in a manner consistent with the actual acquisition of the image data by the imaging device.

Abstract: A method of treating an electrically non-conductive tunnel barrier layer through an overlayer of a tunnel junction device with ultra-violet light is disclosed. The method includes irradiating a tunnel barrier layer with ultra-violet light through at least one overlayer that covers the tunnel barrier layer to activate oxygen or nitrogen atoms disposed in the barrier layer so that those atoms will react with a target material of the tunnel barrier layer to form a uniformly oxidized or nitridized tunnel barrier layer having minimal or no defects therein and/or a desired breakdown voltage. The ultra violet light can irradiate the tunnel barrier layer during or after the formation of the overlayer. Heat can be applied before, during, or after the irradiation step to increase the activation rate and to further reduce defects. The method is applicable to any tunnel junction device including a magnetic field sensitive memory device such as a MRAM.

Abstract: A method for treating a tunnel barrier layer of a tunnel junction device is disclosed. The method includes irradiating a tunnel barrier layer with ultra-violet light to activate oxygen or nitrogen atoms disposed in the barrier layer so that those atoms will react with a material of the tunnel barrier layer to form a uniformly oxidized or nitridized tunnel barrier layer having minimal or no defects therein and/or a desired breakdown voltage. The ultra violet light can irradiate an already formed tunnel barrier layer or it can irradiate the tunnel barrier layer as it is being formed. Heat can be applied before, during, or after the irradiation step to increase activation and further reduce defects. The method is applicable to any tunnel junction device including a magnetic field sensitive memory device such as a MRAM.

Abstract: A method of forming an active device is provided. The method includes performing a first patterning operation on a first plurality of layers. This first patterning operation defines a first feature of the active device. Then, a second patterning operation can be performed on at least one layer of the first plurality of layers. This second patterning operation defines a second feature of the active device. Of importance, the first and second patterning operations are performed substantially back-to-back, thereby ensuring that the active device can accurately function.

Abstract: An improved multi-stage binary hierarchy decoder characterized in that at least one of the decoding stages subsequent to the first stage is implemented as a Transmission Gate Matrix (TGM) in which a single transmission gate enables an active input from the previous stage to its output, thereby resulting in reduced area requirements when implemented as an integrated circuit.

Abstract: A business platform can provide access to applications and provide for the integration of resources with other applications, including internal and external applications, services and systems. A portal framework included within the platform can render portals including graphical user interfaces for displaying and receiving content that can be used by various applications. A portal framework can provide an interface to various resources such that information received and displayed by the portal framework can be exchanged with internal and external resources using standards-based transport protocols, messaging systems, and document types. An integration framework can be invoked to exchange this information among applications and services. An integration framework can provide access to resources by integrating the resources with an application server. The portal framework and integration framework can be implemented on an application server which can support enterprise applications.

Abstract: In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.

Abstract: A method for measuring a pen-to-paper spacing in an inkjet printing mechanism is provided. Firstly, a first nozzle of a printhead in the printing mechanism ejects a first ink drop onto a medium at a first ejection velocity when the printhead moves at a first moving velocity along a scanning axis and when the printhead reaches a first position along the scanning axis. Subsequently, a second nozzle of the printhead ejects a second ink drop onto the medium at a second ejection velocity when the printhead moves at a second moving velocity along the scanning axis and when the printhead reaches a second position along the scanning axis. The spacing between the two nozzles along the scanning axis and the spacing between the two positions along the scanning axis are predetermined. Then the spacing between the first and second ink drops on the medium along the scanning axis is measured.

Abstract: Fibrous monolith composites having architectures that provide increased flaw insensitivity, improved hardness, wear resistance and damage tolerance and methods of manufacture thereof are provided for use in dynamic environments to mitigate impact damage and increase wear resistance.

Abstract: A base-loaded polymer is applied to a semiconductor feature formed after exposing and developing a photoresist layer in order to reduce line edge roughness caused by a residual acid collecting on the edges of the feature during the post-exposure bake of the photoresist. Alternatively, a polymer is applied containing grains that are of suitable for smoothing the line edge roughness.

Abstract: A separable modulator architecture is disclosed. The modulator has a mirror suspended from a flexible layer over a cavity. The flexible layer also forms supports and support posts for the mirror. An alternative separable modulator architecture has a mirror suspended over a cavity. The modulator is supported by supports and support posts. The support posts comprise a flexible layer over support post plugs. A bus structure may be formed upon the flexible layer arranged over the support posts.

Abstract: A method and apparatus are provided for determining quality metrics associated with a test pattern used to test an integrated circuit (IC). The delays associated with (1) a longest sensitizable path through the IC that includes the delay fault and (2) an actual path exercised by the test pattern through the IC that includes the delay fault are determined. A difference between the delays is then obtained. The difference is then combined with a difference between a speed at which the test is performed and a design specification operating speed of the IC for the actual path. The sum represents the first quality metric associated with the test pattern for a given fault site. The ratio of the delays of the actual path to the longest sensitizable path represents the second quality metric associated with the test pattern for a given fault site.

Abstract: A system and method for integrating microfluidic components in a microfluidic system enables the microfluidic system to perform a selected microfluidic function. A capping module includes a microfluidic element for performing a microfluidic function. The capping module is stacked on a microfluidic substrate having microfluidic plumbing to incorporate the microfluidic function into the system.

Abstract: A graft copolymer containing one or more ethylenically-unsaturated, aliphatic or aromatic, nitrogen- and oxygen-containing graftable monomers grafted to a polyolefin is disclosed. Novel monomers, methods of making such monomers, and graft copolymers comprising such monomers are based on reacting an acylating agent with an amine to form a reaction product. The reaction product may include more than one chemical compound formed from the combination of the acylating agent and the amine. The monomer is the graftable, ethylenically unsaturated, aliphatic or aromatic, nitrogen- and oxygen-containing compound(s) of the reaction product. The monomer may, but need not, be recovered from the product mixture. The preferred monomer is the reaction product of maleic anhydride and 4-aminodiphenylamine. Also described is a method of making a dispersant viscosity index improver. The monomer of the present invention may be grafted to a polyolefin in solutions or melts.

Abstract: A memory cell of a data storage device includes serially-connected first and second magnetoresistive devices. The first magnetoresistive device has first and second resistance states. The second magnetoresistive device has third and fourth resistance states. The four resistance states are detectably different.

Abstract: A non-volatile memory module for use in a computer system is disclosed. The non-volatile memory module is capable of storing information indefinitely and can be inserted and removed from the computer system during operation. The non-volatile memory can serve as the main memory within the computer system to hold the operating system and any other programs that are accessed by the computer system during operation.

Abstract: A data storage device includes a resistive cross point array of memory cells. Each memory cell includes serially-connected first and second resistive devices. Each resistive device has programmable first and second resistance states. The data storage device further includes pluralities of first, second and third conductors, and a read circuit. Each first conductor is connected to data layers of a column of the first magnetoresistive devices; each second conductor is connected to data layers of a column of second magnetoresistive devices; and each third conductor is between reference layers of a row of first and second magnetoresistive devices. The read circuit applies different first and second voltages during read operations. The first voltage is applied to the first and second conductors crossing a selected memory cell; and the second voltage is applied to the third conductor crossing the selected memory cell.

Abstract: A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.