Patents by Inventor Manoj Kumar

Manoj Kumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170039248
    Abstract: An action framework system provides context-based actions in association with a source application. The source application detects selection of a content element presented by the source application. The content element is associated with an application identifier identifying a target application and an action identifier identifying an operation to be executed by the target application on the content element. The target application identified by the application identifier is executed to perform the operation identified by the action identifier on the content element, responsive to detection of the selection of the content element. In one implementation, the source application is a search feature providing different contexts of search results (e.g., from a local file system search, a local application content search, a Web search, a remote application content search).
    Type: Application
    Filed: October 19, 2016
    Publication date: February 9, 2017
    Inventors: Max Glenn Morris, Sashi Raghupathy, Manoj Kumar Biswas, Amy Rambhia, Daniel Oliver, Robert Emmett Kolba, JR., Sandy Wong
  • Publication number: 20170039218
    Abstract: Data storage operations, including content-indexing, containerized deduplication, and policy-driven storage, are performed within a cloud environment. The systems support a variety of clients and cloud storage sites that may connect to the system in a cloud environment that requires data transfer over wide area networks, such as the Internet, which may have appreciable latency and/or packet loss, using various network protocols, including HTTP and FTP. Methods are disclosed for content indexing data stored within a cloud environment to facilitate later searching, including collaborative searching. Methods are also disclosed for performing containerized deduplication to reduce the strain on a system namespace, effectuate cost savings, etc. Methods are disclosed for identifying suitable storage locations, including suitable cloud storage sites, for data files subject to a storage policy.
    Type: Application
    Filed: September 7, 2016
    Publication date: February 9, 2017
    Inventors: Anand Prahlad, Marcus S. Muller, Rajiv Kottomtharayil, Srinivas Kavuri, Parag Gokhale, Manoj Kumar Vijayan
  • Publication number: 20170032764
    Abstract: Techniques are described for determining a region to be updated in a frame based on positional changes of one layer from frame-to-frame. The positional changes may be displacement of a layer or removal of a layer from one frame to the next. In addition to the information of the positional changes, the techniques also utilize all areas for which the image content changed, but the position did not, for determining the region to be updated.
    Type: Application
    Filed: September 11, 2015
    Publication date: February 2, 2017
    Inventors: Ramkumar Radhakrishnan, Dileep Marchya, Mastan Manoj Kumar Amara Venkata, Saurabh Shah
  • Publication number: 20170031616
    Abstract: A system according to certain aspects may include a secondary storage controller computer configured to: in response to a first instruction to obtain a first secondary copy of a first data set from a secondary storage device(s), the first instruction associated with a first restore operation: instantiate a first restore thread on a processor of the secondary storage controller computer; using the first restore thread, retrieve the first secondary copy from the secondary storage device(s); and forward the retrieved first secondary copy to a primary storage subsystem for storage; and in response to a second instruction to obtain a second secondary copy of a second data set from the secondary storage device(s), the second instruction associated with a second restore operation: using the first restore thread, retrieve the second secondary copy from the secondary storage device(s); and forward the retrieved second secondary copy to the primary storage subsystem for storage.
    Type: Application
    Filed: June 30, 2016
    Publication date: February 2, 2017
    Inventors: Manoj Kumar Vijayan, Saurabh Agrawal, Deepak Raghunath Attarde
  • Publication number: 20170031618
    Abstract: A system according to certain aspects may include a secondary storage controller computer configured to: in response to a first instruction to obtain a first secondary copy of a first data set from a secondary storage device(s), the first instruction associated with a first restore operation: instantiate a first restore thread on a processor of the secondary storage controller computer; using the first restore thread, retrieve the first secondary copy from the secondary storage device(s); and forward the retrieved first secondary copy to a primary storage subsystem for storage; and in response to a second instruction to obtain a second secondary copy of a second data set from the secondary storage device(s), the second instruction associated with a second restore operation: using the first restore thread, retrieve the second secondary copy from the secondary storage device(s); and forward the retrieved second secondary copy to the primary storage subsystem for storage.
    Type: Application
    Filed: June 30, 2016
    Publication date: February 2, 2017
    Inventors: Manoj Kumar Vijayan, Saurabh Agrawal, Deepak Raghunath Attarde
  • Publication number: 20170022175
    Abstract: The present invention provides a process for the hydrogenation of the levulinic acid to ?-valerolactone in a single step with a single Pt supported on hydrotalcite catalyst. The process provides conversion of ?-valerolactone over Pt supported hydrotalcite catalyst at room temperature (25° C.). The process provides a levulinic acid conversion of 34-100% with 20-50 bar hydrogen pressure to give ?-valerolactone selectivity up to 99%.
    Type: Application
    Filed: July 11, 2016
    Publication date: January 26, 2017
    Inventors: Bal Rajaram, Pendem Chandrashekar, Bordoloi Ankur, Konathala Laxmi Narayan Sivakumar, Manoj Kumar, Saran Sandeep
  • Publication number: 20170025411
    Abstract: The invention provides a semiconductor device. The semiconductor device includes a buried oxide layer disposed on a substrate. A semiconductor layer having a first conduction type is disposed on the buried oxide layer. A first well doped region having a second conduction type is disposed in the semiconductor layer. A cathode doped region having the second conduction type is disposed in the first well doped region. A first anode doped region having the first conduction type is disposed in the first well doped region, separated from the cathode doped region. A first distance from a bottom boundary of the first anode doped region to a top surface of the semiconductor layer is greater than a second distance from the bottom boundary to an interface between the semiconductor layer and the buried oxide layer.
    Type: Application
    Filed: July 23, 2015
    Publication date: January 26, 2017
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Manoj KUMAR, Pei-Heng HUNG, Hsiung-Shih CHANG, Chia-Hao LEE, Jui-Chun CHANG
  • Publication number: 20170024286
    Abstract: The disclosed techniques include generation of a single index table when backing up data in a first backup format to a backup storage system that uses a second backup format. Using the single index table, a query for a data item can be answered by searching the single index table. The single index table avoids having to search through multiple index tables, each corresponding to a different backup format that may be used for backing up the searched data item.
    Type: Application
    Filed: September 30, 2016
    Publication date: January 26, 2017
    Inventor: Manoj Kumar Vijayan
  • Publication number: 20170026361
    Abstract: Methods, systems, and computer-readable media support provisioning a computer application that is executed on an associated computing component through a primary computing component. Even though different passwords may be associated with a user for the primary and the associated computing components, one aspect is seamless single sign-on to a computer cluster that provides the external computer application so that any user or group membership changes at the primary computing component is transparent to the associated computing component. Users may be restricted service for the application at the edge nodes of the cluster and are then able to access data in directories corresponding to the user's group as configured at the primary computing component. A batch process may be initiated to issue a security token to one more users, thus enabling the user to obtain a service ticket and consequently service for the application.
    Type: Application
    Filed: July 21, 2015
    Publication date: January 26, 2017
    Inventors: Hemanth Grama Jayakumar, Manoj Kumar Chava
  • Patent number: 9553091
    Abstract: A semiconductor structure is provided, which includes a first high-voltage MOS device region having a first well and a first light-doping region in a part of the first well, wherein the conductive type of the first well and the conductive type of the first light-doping region are opposite. The first high-voltage MOS device region also includes a first gate stack on a part of the first well and a part of the first light-doping region, and first heavy-doping regions in the first well and the first light-doping region at two sides of the gate stack, wherein the conductive type of the first heavy-doping region and the conductive type of the first well are the same. The first light-doping region between the first well and the first heavy-doping regions is a channel region of the first high-voltage MOS device region.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: January 24, 2017
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Manoj Kumar, Chia-Hao Lee, Chih-Cherng Liao, Ching-Yi Hsu, Jun-Wei Chen
  • Patent number: 9548375
    Abstract: A vertical diode is provided. The vertical diode includes a high-voltage N-type well region in a substrate, and two P-doped regions spaced apart from each other in the high-voltage N-type well region. The vertical diode also includes an N-type well region in the high-voltage N-type well region, and an N-type heavily doped region in the N-type well region. A plurality of isolation structures are formed on the substrate to define an anode region and a cathode region. There is a bottom N-type implanted region under the high-voltage N-type well region corresponding to the anode region. The bottom N-type implanted region directly contacts or partially overlaps the high-voltage N-type well region. A method for fabricating a vertical diode is also provided.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: January 17, 2017
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Hsiung-Shih Chang, Manoj Kumar, Jui-Chun Chang, Chia-Hao Lee, Li-Che Chen
  • Patent number: 9539007
    Abstract: A surgical fastener applying apparatus for applying fasteners to body tissue including a cartridge receiving half-section defining an elongated channel member configured to releasably receive a stationary housing of a firing assembly. The stationary housing is dimensioned to releasably receive a single use loading unit therein, and includes a lockout structure that prevents insertion of the stationary housing into the cartridge receiving half-section if the single use loading unit is not mounted in the stationary housing.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: January 10, 2017
    Assignee: Covidien LP
    Inventors: Harshottam Singh Dhakad, Manoj Kumar Agarwal, Nikhil R. Katre, Kiran Garikipati, Cinish P. Varghese, Arvind Kumar Gupta, Vinayan Vivekanandan
  • Patent number: 9530900
    Abstract: A Schottky diode is provided, which includes a well of a first conductive type and a lightly doped region of a second conductive type on the well, wherein the first conductive type is opposite to the second conductive type. The Schottky diode includes a heavily doped region of the second conductive type on the well, and a gate structure on a part of the lightly doped region. The gate structure includes a gate electrode and a gate dielectric layer. The lightly doped region not covered by the gate structure and the heavily doped region are disposed at two opposite sides of the gate structure, respectively. The Schottky diode includes a first contact electrically connecting the heavily doped region and a first electrode, a second contact electrically connecting the gate electrode and a second electrode, and a third contact electrically connecting the lightly doped region and the second electrode.
    Type: Grant
    Filed: January 26, 2016
    Date of Patent: December 27, 2016
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Pei-Heng Hung, Manoj Kumar, Chia-Hao Lee, Chih-Cherng Liao, Jun-Wei Chen
  • Publication number: 20160359040
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer disposed over the substrate; a gate electrode disposed over the epitaxial layer; a source region and a drain region disposed in the epitaxial layer at opposite sides of the gate electrode; a trench extending from a top surface of the epitaxial layer through the source region into the epitaxial layer, wherein the trench has a slanted side and a bottom surface; and a first conductive-type linking region having the first conductive type, wherein the first conductive-type linking region surrounds the slanted side of the trench and contacts the bottom surface of the trench, wherein the first conductive-type linking region electrically connects the source region and the substrate. The present disclosure also provides a method for manufacturing this semiconductor device.
    Type: Application
    Filed: June 5, 2015
    Publication date: December 8, 2016
    Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Manoj KUMAR, Tsung-Hsiung LEE, Pei-Heng HUNG, Chia-Hao LEE, Jui-Chun CHANG
  • Publication number: 20160351341
    Abstract: A method of forming an ordered nanorods array in a confined space is used to form a high surface area device where an ensemble of parallel trenches has micrometer dimensions for the width and depth of the trenches, which are decorated with crystalline nanowires radiating from the sidewalls and bases of the trenches. The high surface area device is formed by depositing a conformal crystalline seed coating in the trenches, forming microchannels from these trenches by placing a barrier layer on the open surface of the trenches, contacting the conformal coating with a crystal precursor solution that is caused to flow through the microchannels. In an embodiment, a very high surface area electrode is constructed with ZnO nanowires radiating from the sidewalls and base of trenches formed on a silicon substrate. The device can be a dye-sensitized solar cell.
    Type: Application
    Filed: August 12, 2016
    Publication date: December 1, 2016
    Inventors: Mikhail Ladanov, Paula C. Algarin Amaris, Garrett Matthews, Manoj Kumar Ram, Sylvia W. Thomas, Ashok Kumar, Jing Wang, Arash Takshi
  • Publication number: 20160350391
    Abstract: An information management system according to certain aspects uses backup copies or other secondary copies of production data for the purposes of replicating production data to another client. The secondary copies can be deduplicated copies. By utilizing available secondary copies of the data for replication, the system can reduce the impact on the production machines associated with replication. Utilizing deduplicated copies not only reduces the amount of stored data, but also reduces the amount of data that is communicated between the source and the destination, increasing the speed of the replication process.
    Type: Application
    Filed: May 26, 2015
    Publication date: December 1, 2016
    Inventors: Manoj Kumar VIJAYAN, Joe Sabu Thyvelikkakakth JOB
  • Patent number: 9507668
    Abstract: A system and method for block-based restarts are described. A data storage system interfaces with one or more nodes of a network file system on which a volume is provided in order to read data stored on the volume on a block-by-block basis. Backup data sets capable of recreating the data on the volume are generated from the data blocks read from the volume. The system can interface with a backup memory resource and write the backup data sets to the backup memory resource in a sequential order. As the backup data sets are generated and written to the backup memory resource, restart checkpoints for the data set are also regularly generated and stored for use in restarting the backup process in the event of a recoverable failure in the transfer.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: November 29, 2016
    Assignee: NetApp, Inc.
    Inventors: James Namboorikandathil Joseph, Manoj Kumar Venkatachary Sundararajan, Ravi K. Budhia
  • Publication number: 20160340598
    Abstract: The present invention relates to an apparatus and method for mixing and atomizing a hydrocarbon stream using a diluent/dispersion stream.
    Type: Application
    Filed: May 19, 2016
    Publication date: November 24, 2016
    Applicant: INDIAN OIL CORPORATION LIMITED
    Inventors: Shoeb Hussain KHAN, Bidyut DE, Satheesh Vetterkunnel KUMARAN, Manoj Kumar YADAV, Debasis BHATTACHARYYA, Brijesh KUMAR
  • Patent number: 9502584
    Abstract: A vertical diode is provided. The vertical diode includes a high-voltage N-type well region in a substrate, and two P-doped regions spaced apart from each other in the high-voltage N-type well region. The vertical diode also includes an N-type well region in the high-voltage N-type well region, and an N-type heavily doped region in the N-type well region. A plurality of isolation structures are formed on the substrate to define an anode region and a cathode region. There is a bottom N-type implanted region under the high-voltage N-type well region corresponding to the anode region. The bottom N-type implanted region directly contacts or partially overlaps the high-voltage N-type well region. A method for fabricating a vertical diode is also provided.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: November 22, 2016
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Hsiung-Shih Chang, Manoj Kumar, Jui-Chun Chang, Chia-Hao Lee, Li-Che Chen
  • Publication number: 20160335009
    Abstract: A system according to certain aspects may include a secondary storage controller computer configured to: in response to a first instruction to obtain a first secondary copy of a first data set from a secondary storage device(s), the first instruction associated with a first restore operation: instantiate a first restore thread on a processor of the secondary storage controller computer; using the first restore thread, retrieve the first secondary copy from the secondary storage device(s); and forward the retrieved first secondary copy to a primary storage subsystem for storage; and in response to a second instruction to obtain a second secondary copy of a second data set from the secondary storage device(s), the second instruction associated with a second restore operation: using the first restore thread, retrieve the second secondary copy from the secondary storage device(s); and forward the retrieved second secondary copy to the primary storage subsystem for storage.
    Type: Application
    Filed: June 1, 2015
    Publication date: November 17, 2016
    Inventors: Manoj Kumar VIJAYAN, Saurabh AGRAWAL, Deepak Raghunath ATTARDE