Abstract: A semiconductor manufacturing process in which a single crystal silicon semiconductor substrate is immersed in an oxidation chamber maintained at a first temperature preferably between 400.degree. and 700.degree. C. for a first duration. During the first duration, the oxidation chamber comprises a first ambient gas of N.sub.2 or Argon. Thereafter, the ambient temperature within the oxidation chamber is ramped to a second temperature in the range of approximately 600.degree. to 1100.degree. C. NH.sub.3 is then introduced into the oxidation chamber simultaneously with either NO or N.sub.2 O to form an oxynitride layer. Thereafter, a conductive gate structure is formed on the oxynitride layer and a source/drain impurity distribution is introduced into a pair of source/drain regions laterally displaced on either side of the channel region of the semiconductor substrate. The channel region is aligned with the conductive gate.

Abstract: A method of fabricating an integrated circuit in which nitrogen is incorporated into the gate dielectric and transistor gate. The method comprises the providing of a semiconductor substrate that has a p-well and a laterally displaced n-well, each including a channel region laterally displaced between a pair of source/drain regions. Preferably, the semiconductor substrate has a resistivity of approximately 10 to 15 .OMEGA.-cm. A dielectric layer is formed on an upper surface of the semiconductor substrate. The formation of the dielectric layer preferably comprises a thermal oxidation performed at a temperature of approximately 600.degree. to 900.degree. C. and the resulting thermal oxide has a thickness less than approximately 50 angstroms. A conductive gate layer is then formed on the dielectric layer. In a preferred embodiment, the conductive gate layer is formed by chemically vapor depositing polysilicon at a pressure of less than approximately 2 torrs at a temperature in the range of approximately 500.