Abstract: A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with copper and then planarized. The electrically conductive material is provided an upper surface that is recessed relative to the upper surface of the layer of insulating material. A cap, which can be conductive (e.g., Ta) or resistive (e.g., TiAIN), is disposed over the electrically conductive material and within the groove. A surface of the cap that faces away from the electrically conductive material, is formed with an elevation substantially equal to that of the edge of the liner, or the cap can extend over the liner edge. At least one layer of magneto-resistive material is disposed over a portion of the cap. Advantageously, the cap can protect the copper line from harmful etch processes required for etching a MRAM stack, while keeping the structure planar after CMP.

Abstract: The invention relates to interconnects for an integrated circuit memory device. Embodiments of the invention include processes to fabricate interconnects for memory devices in relatively few steps. Embodiments of the invention further include memory devices with metallization layers having unequal pitch dimensions in different areas of the chip, thereby permitting simultaneous fabrication of array electrodes and electrical interconnects in different areas of the chip. This reduces the number of fabrication steps used to make interconnects, thereby speeding up fabrication and reducing production costs.

Abstract: The present invention provides electronic communication devices, methods of forming electrical communication devices, and communications methods. An electronic communication device adapted to receive electronic signals includes: a housing comprising a substrate and an encapsulant; an integrated circuit provided within the housing and comprising transponder circuitry operable to communicate an identification signal responsive to receiving a polling signal; an antenna provided within the housing and being coupled with the transponder circuitry; and a ground plane provided within the housing and being spaced from the antenna and configured to shield some of the electronic signals from the antenna and reflect others of the electronic signals towards the antenna.

Abstract: An integrated circuit structure is formed using a damascene process that involves forming a trench or cavity for the structure in a temporary layer of material. A conductive material, such as copper, can then be deposited on the temporary layer to overfill the trench or cavity, and the excess conductive material can be removed by polishing down to the surface of the temporary layer. The integrated circuit structure can then be exposed by removing the temporary layer. One example of an integrated circuit structure that can be formed using this method is an upper electrode in an MRAM array. By using the process to form an upper electrode in an MRAM array, the process of forming a magnetic keeper around the upper electrode is advantageously simplified.

Abstract: A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

Abstract: A method of forming integrated circuitry includes chemical vapor depositing a silicon carbide comprising layer over a substrate at a temperature of no greater than 500° C. Plasma etching is conducted through at least a portion of the silicon carbide comprising layer using a gas chemistry comprising oxygen and hydrogen. Semiconductor processing methods include the above in fabrication of contact openings and in fabrication of MRAM circuitry. Semiconductor processing methods also include fabrication of contact openings using resist and removing silicon carbide comprising material and resist in a common plasma etching step.

Abstract: A wireless identification device including a housing; circuitry in the housing configured to provide a signal to identify the device in response to an interrogation signal; and a selectively actuated switch supported by the housing and controlling whether the circuitry identifies the device. A method of manufacturing a wireless identification device, the method comprising configuring circuitry to provide a signal to identify the device in response to an interrogation signal; coupling the circuitry to a push-on/push-off switch supported by the housing and controlling whether the circuitry provides the signal to identify the device; and encasing the circuitry in a housing such that the switch is actable from outside the housing by touching a portion of the housing.

Abstract: An integrated circuit includes operational circuitry; a sensor configured to sense an environmental parameter; and adjustment circuitry coupled to the sensor and to the operational circuitry and configured to affect the operational circuitry to at least partially counteract the effects of the environmental parameter. A method of testing an integrated circuit includes supporting a sensor in the integrated circuit and using the sensor to sense environmental data.

Abstract: An integrated circuit structure is formed using a damascene process that involves forming a trench or cavity for the structure in a temporary layer of material. A conductive material, such as copper, can then be deposited on the temporary layer to overfill the trench or cavity, and the excess conductive material can be removed by polishing down to the surface of the temporary layer. The integrated circuit structure can then be exposed by removing the temporary layer. One example of an integrated circuit structure that can be formed using this method is an upper electrode in an MRAM array. By using the process to form an upper electrode in an MRAM array, the process of forming a magnetic keeper around the upper electrode is advantageously simplified.

Abstract: Structures and methods for providing magnetic shielding for integrated circuits are disclosed. The shielding comprises a foil or sheet of magnetically permeable material applied to an outer surface of a molded (e.g., epoxy) integrated circuit package. The foil can be held in place by adhesive or by mechanical means. The thickness of the shielding can be tailored to a customer's specific needs, and can be applied after all high temperature processing, such that a degaussed shield can be provided despite use of strong magnetic fields during high temperature processing, which fields are employed to maintain pinned magnetic layers within the integrated circuit.

Abstract: A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

Abstract: An amplifier powered by a selectively engageable voltage source and a method for operating the amplifier. The amplifier includes first and second electrodes for receiving an input signal to be amplified. The first and second electrodes are adapted to be respectively connected to coupling capacitors. The amplifier also includes a differential amplifier having inputs respectively connected to the first and second electrodes, and having an output. The amplifier additionally includes selectively engageable resistances coupled between the voltage source and respective inputs of the differential amplifier and defining, with the coupling capacitors, the high pass characteristics of the circuit. The amplifier further includes second selectively engageable resistances coupled between the voltage source and respective inputs of the differential amplifier.

Abstract: An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft magnetic layer. The MRAM cells are all formed simultaneously and at least some of the MRAM cells are designed to function as antifuse devices whereby the application of a selected electrical potential can short the antifuse device to thereby affect the functionality of the MRAM device.

Abstract: A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.

Abstract: Structures and methods for providing magnetic shielding for integrated circuits are disclosed. The shielding comprises a foil or sheet of magnetically permeable material applied to an outer surface of a molded (e.g., epoxy) integrated circuit package. The foil can be held in place by adhesive or by mechanical means. The thickness of the shielding can be tailored to a customer's specific needs, and can be applied after all high temperature processing, such that a degaussed shield can be provided despite use of strong magnetic fields during high temperature processing, which fields are employed to maintain pinned magnetic layers within the integrated circuit.

Abstract: A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic layer has an opening in which a thinner tunnel barrier layer is disposed. The resistance of a magnetic tunnel junction memory element may be controlled by adjusting the surface area and/or thickness of the tunnel barrier layer without regard to the surface area of the ferromagnetic layers.

Abstract: The invention encompasses an electrical apparatus. Such apparatus includes RFID circuitry on a first substrate, and sensor circuitry on a second substrate. A receiving structure is associated with one of the RFID circuitry and the sensor circuitry, and at least one connecting structure is associated with the other of the RFID circuitry and the sensor circuitry. The at least one connecting structure is removable received within the receiving structure. The invention also encompasses a method of forming an electrical apparatus. A first substrate and a second substrate are provided. The first substrate has RFID circuitry thereon, and the second substrate has sensing circuitry thereon. A receptacle is joined with one of the RFID circuitry and the sensor circuitry, and has at least one orifice extending therein. At least one prong is joined with the other of the RFID circuitry and the sensor circuitry.

Abstract: This invention relates to MRAM technology and new MRAM memory element designs. Specifically, this invention relates to the use of ferromagnetic layers of different sizes in an MRAM element. This reduces magnetic coupling between a pinned layer and a sense layer and provides a more effective memory element.

Abstract: A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

Abstract: A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.