Abstract: A display device (1) includes: a substrate (2); and a first transistor (1a) formed on the substrate (2), The first transistor (1a) includes: an oxide semiconductor layer (4) formed on the substrate (2); a gate insulating layer (5) formed on the oxide semiconductor layer (4); and a gate electrode (6) formed on the gate insulating layer (5). The oxide semiconductor layer (4) includes: a conductive region (4a) provided with conductivity; a first resistance region (4b) positioned below the gate electrode (6); and a second resistance region (4c) provided between the conductive region (4a) and the first resistance region (4b), and positioned outside the gate electrode (6). The first resistance (4b) is larger in resistance than the second resistance region (4c).

Abstract: At a bending section of a frame region, an opening portion is formed, in at least one inorganic insulating film included in the TFT layer, through the at least one inorganic insulating film to expose an upper surface of a resin substrate, and a frame wiring line is provided on the resin substrate exposed through the opening portion, and among the at least one inorganic insulating film included in the TFT layer, an inorganic insulating film being in contact with the upper surface of the resin substrate is formed with a silicon oxynitride film.

Abstract: A display device includes: a resin substrate; a TFT layer; a bending portion; at least one inorganic film forming the TFT layer; an interlayer insulating film forming the TFT layer; and a plurality of wires forming the TFT layer, wherein the at least one inorganic film and the interlayer insulating film include an opening disposed at the bending portion, the at least one inorganic film includes a plurality of island-shaped inorganic films remaining in the opening, each of the plurality of wires overlaps a corresponding island-shaped inorganic film among the plurality of island-shaped inorganic films, and the display device includes a metal layer in a form of islands disposed between each of the plurality of wires and the corresponding island-shaped inorganic film overlapping each of the plurality of wires, the metal layer being in contact with each of the plurality of wires.

Abstract: A method for manufacturing a display device includes a pixel circuit formed on a substrate, wherein a manufacturing process of the pixel circuit includes a patterning step of a metal film performed in the following procedures (a) to (e): (a) forming the metal film on the substrate; (b) forming a first resist pattern on the metal film by a photolithographic method; (c) etching the metal film with the first resist pattern to form a first metal pattern; (d) forming by the photolithographic method on the metal film formed in the first metal pattern, a second resist pattern including a pattern shape smaller than a pattern shape of the first resist pattern; and (e) etching the metal film with the second resist pattern to form a second metal pattern.

Abstract: There are provided wires in a frame area. The wires run parallel to each other in a direction crossing a direction in which a bending portion is extended. An inorganic insulating film has an opening therethrough in the bending portion. A top face of a resin substrate is exposed in the opening. The wires are provided on the inorganic insulating film and on the top face of the resin substrate exposed in the opening. In the opening, the top face of the resin substrate and an end face of the inorganic insulating film make a smaller angle below between the wires than below the wires.

Abstract: In a bending portion, a slit that exposes a resin substrate is formed in at least one inorganic insulating film, a first flattening film is provided so as to fill in the slit, each of a plurality of wiring lines is provided on the first flattening film and both end portions of the inorganic insulating film, the slit being formed at both end portions, a second flattening film is provided on each of the wiring lines, a plurality of conductive layers each having an island shape are provided on the second flattening film, and each of the wiring lines and a corresponding conductive layer are electrically connected via contact holes formed in the second flattening film.

Abstract: A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.

Abstract: A TFT includes an oxide semiconductor layer including a conductive region electrically connected to a source electrode , a conductive region electrically connected to a drain electrode, a channel region being an oxide semiconductor region that overlaps a gate electrode, and at least one resistive region being an oxide semiconductor region provided between the channel region and a conductive region adjacent to the channel region.

Abstract: In an organic electroluminescence (EL) display device, a display region and a first frame region are defined in a substantially circular shape or a substantially oval shape, and in a bending portion, an opening is formed in an inorganic layered film, and a frame flattening film is provided to fill the opening. An end portion of the opening on the display region side is formed along an arc of the first frame region on the bending portion side.

Abstract: An active matrix substrate includes a plurality of first contact holes extending through an inorganic insulating film, a first protection layer that is a silicon nitride film, and a second protection layer, a plurality of second contact holes extending through the inorganic insulating film and the second protection layer, a first transistor, and a second transistor. A channel region of the second transistor does not overlap the first protection layer.

Abstract: A first wiring line and a second wiring line are extended to an upper face of a resin substrate exposed from a slit formed in at least one layer of an inorganic insulating film, a first flattening film is provided within the slit which exposes the upper face of the resin substrate between the portions to which the first wiring line and the second wiring line are extended, and the first wiring line and the second wiring line are electrically connected to each other via a third wiring line provided between an end face of the first flattening film and the upper face of the resin substrate.

Abstract: At a bending section of a frame region, an opening portion is formed, in at least one inorganic insulating film included in the TFT layer, through the at least one inorganic insulating film to expose an upper surface of a resin substrate, and a frame wiring line is provided on the resin substrate exposed through the opening portion, and among the at least one inorganic insulating film included in the TFT layer, an inorganic insulating film being in contact with the upper surface of the resin substrate is formed with a silicon oxynitride film.

Abstract: A display device including a resin layer, and a TFT layer being an upper layer with respect to the resin layer, wherein a bending section is provided on a peripheral edge, includes a terminal wiring line that is connected to a terminal in the TFT layer and passes through the bending section, and the terminal wiring line includes a first wiring line and a second wiring line that are positioned on both sides of the bending section, a third wiring line that passes through the bending section and is electrically connected with each of the first wiring line and the second wiring line, and a fourth wiring line that is formed in a layer different from that of the third wiring line and is electrically connected with each of the first wiring line and the second wiring line.

Abstract: An electrode contact structure includes a first inorganic insulating film, a first electrode formed on the first inorganic insulating film, a second inorganic insulating film formed on the first inorganic insulating film and the first electrode to cover the first electrode, a second electrode formed on the second inorganic insulating film, a third inorganic insulating film formed on the second inorganic insulating film and the second electrode to cover the second electrode, and a third electrode configured to cover a contact hole formed in the third inorganic insulating film and the second inorganic insulating film, and electrically connect to each of the first electrode and the second electrode exposed in the contact hole.

Abstract: The frame wiring line provided in a frame region includes, at a bending section, a plurality of branch wiring lines being divided into a plurality of branches, wherein the plurality of branch wiring lines are arranged at at least two types of heights relative to a resin substrate.

Abstract: At a bending section of a frame region, an opening portion is formed on at least one layer of inorganic film included in a TFT layer, in which a residual layer of the inorganic film is formed, a flattening film is provided to plug the opening portion, and the frame wiring line is provided on the flattening film.

Abstract: A display device including a resin layer, and a TFT layer being an upper layer with respect to the resin layer, wherein a bending section is provided on a peripheral edge, includes a terminal wiring line that is connected to a terminal in the TFT layer and passes through the bending section, and the terminal wiring line includes a first wiring line and a second wiring line that are positioned on both sides of the bending section, a third wiring line that passes through the bending section and is electrically connected with each of the first wiring line and the second wiring line, and a fourth wiring line that is formed in a layer different from that of the third wiring line and is electrically connected with each of the first wiring line and the second wiring line.

Abstract: A display device including a resin layer, a TFT layer being an upper layer with respect to the resin layer, and a light-emitting element layer being an upper layer with respect to the TFT layer, in which a bending section is provided on a peripheral edge, includes a terminal wiring line that passes through the bending section and is connected to a terminal, and an auxiliary wiring line, and the terminal wiring line includes a first wiring line and a second wiring line that are positioned on both sides of the bending section, and a third wiring line that passes through the bending section and is electrically connected with each of the first wiring line and the second wiring line, and the auxiliary wiring line is superimposed on the third wiring line via a flexible insulating film in the bending section.

Abstract: A flexible organic EL display device includes a polycrystalline silicon layer in which an extent of alignment of a silicon crystal orientation by electron back scatter diffraction patterns with a 001 plane is greater than or equal to 3.

Abstract: At a bending section of a frame region, an insulating film with a groove formed on a front surface of the insulating film is provided, the groove extending in a direction intersecting one side of a display region on a terminal section side, and a frame wiring line is provided, at the bending section, to be bent to intersect the groove between the insulating film and a protection film.