Patents by Inventor Masahiko Miwa

Masahiko Miwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030151119
    Abstract: To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
    Type: Application
    Filed: February 19, 2003
    Publication date: August 14, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai
  • Publication number: 20010011725
    Abstract: A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film in which the composition ratios of N, O and H are continuously changed by changing the flow rates of H2 and N2O, is used as the base film to prevent a change in the TFT characteristics. The base film can be formed by varying the flow rates of H2 and N2O in the same film-forming chamber to enhance the productivity.
    Type: Application
    Filed: January 30, 2001
    Publication date: August 9, 2001
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Michinori Iwai
  • Publication number: 20010004121
    Abstract: To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
    Type: Application
    Filed: December 19, 2000
    Publication date: June 21, 2001
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Michinori Iwai
  • Patent number: 5334442
    Abstract: Sheet-like compositions that can be used to form orthoses or orthopedic devices to conform to any shape of a body part. The sheet-like compositions include a pliant sheet impregnated with a viscous water-curable resin that hardens when exposed to water. Both sides of the pliant sheet are covered with individual composite fabric portions, each composite fabric being of a triple-layered structure comprising a front face, a back face and an interconnecting portion, each composite fabric having sufficient open knit or weave to allow the passage of air and moisture therethrough. In some embodiments, a closed-cell foam material may be interposed between one side of the pliant sheet and one of the composite fabric portions, and adhesive means may likewise be incorporated into the overall structure to prevent dislodgement of the pliant sheet, the fabric portions and the foam cell material.
    Type: Grant
    Filed: November 25, 1992
    Date of Patent: August 2, 1994
    Assignee: Alcare Co., Ltd.
    Inventors: Shigetomi Okamoto, Masahiko Miwa, Takayuki Sekine, Hiroshi Yamaguchi