Patents by Inventor Masahiko Miwa

Masahiko Miwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190371829
    Abstract: In formation of a gate electrode, a metal film forming a gate electrode of TFT is formed on a gate insulating film covering a semiconductor layer having an island shape, the gate electrode is formed on the metal film by dry etching, and the exposed gate electrode is subjected to a plasma treatment using oxygen or nitrogen. This prevents formation of needle-shaped or granular crystal while a reduction in production efficiency is suppressed.
    Type: Application
    Filed: February 28, 2017
    Publication date: December 5, 2019
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Takao SAITOH, Yohsuke KANZAKI, Masahiko MIWA, Masaki YAMANAKA, Seiji KANEKO
  • Publication number: 20190372032
    Abstract: In a right PI layer inclined area, a photosensitive PI layer covering an underlying PI layer exposed from an inorganic film of a moisture-proof layer, a gate insulating layer, a second insulating layer, and a third insulating layer is formed.
    Type: Application
    Filed: August 28, 2017
    Publication date: December 5, 2019
    Inventors: Seiji KANEKO, Yohsuke KANZAKI, Takao SAITOH, Masahiko MIWA, Masaki YAMANAKA
  • Publication number: 20190362656
    Abstract: A flexible organic EL display device includes a polycrystalline silicon layer in which an extent of alignment of a silicon crystal orientation by electron back scatter diffraction patterns with a 001 plane is greater than or equal to 3.
    Type: Application
    Filed: June 30, 2017
    Publication date: November 28, 2019
    Inventors: Takao SAITOH, Masaki YAMANAKA, Yohsuke KANZAKI, Seiji KANEKO, Masahiko MIWA
  • Publication number: 20190363172
    Abstract: In formation of a gate electrode, a second metal film is formed on a first metal film by adding oxygen or nitrogen in an inert gas atmosphere, the first metal film and the second metal film are patterned and subjected to a plasma treatment using oxygen or nitrogen, to form a third metal film. Thus, a gate electrode is formed. This prevents formation of needle-shaped or granular crystal while a reduction in production efficiency is suppressed.
    Type: Application
    Filed: March 7, 2017
    Publication date: November 28, 2019
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Takao SAITOH, Yohsuke KANZAKI, Masahiko MIWA, Masaki YAMANAKA, Seiji KANEKO
  • Publication number: 20190363152
    Abstract: In a part of a frame region defined around a display region, an insulating film having a slit formed on a front surface of the insulating film to extend in a direction intersecting an edge of the display region is provided, and a frame wiring line connected to a light-emitting element of the display region is provided, on the insulating film, to be bent to stride across the slit.
    Type: Application
    Filed: September 12, 2017
    Publication date: November 28, 2019
    Inventors: Yohsuke KANZAKI, Takao SAITOH, Masahiko MIWA, Masaki YAMANAKA, Seiji KANEKO
  • Publication number: 20190363154
    Abstract: A photosensitive PI layer fills a bending region and is formed on a third insulating layer in a display region and a terminal region. An opening is formed in the photosensitive PI layer while exposing a gate electrode extension wiring line. A contact hole is formed in a second insulating layer and the third insulating layer.
    Type: Application
    Filed: August 10, 2017
    Publication date: November 28, 2019
    Inventors: Seiji KANEKO, Yohsuke KANZAKI, Takao SAITOH, Masaki YAMANAKA, Masahiko MIWA
  • Publication number: 20190355800
    Abstract: At a bending section of a frame region, an opening portion is formed on at least one layer of inorganic film included in a TFT layer, in which a residual layer of the inorganic film is formed, a flattening film is provided to plug the opening portion, and the frame wiring line is provided on the flattening film.
    Type: Application
    Filed: August 3, 2017
    Publication date: November 21, 2019
    Inventors: Takao SAITOH, Yohsuke KANZAKI, Seiji KANEKO, Masahiko MIWA, Masaki YAMANAKA
  • Publication number: 20190326383
    Abstract: The frame wiring line provided in a frame region includes, at a bending section, a plurality of branch wiring lines being divided into a plurality of branches, wherein the plurality of branch wiring lines are arranged at at least two types of heights relative to a resin substrate.
    Type: Application
    Filed: August 22, 2017
    Publication date: October 24, 2019
    Inventors: Masaki YAMANAKA, Yohsuke KANZAKI, Takao SAITOH, Masahiko MIWA, Seiji KANEKO
  • Publication number: 20150164940
    Abstract: A liquid medicine of the present invention comprising liquid having carbon dioxide dissolved therein, said liquid being administered by using means of liquid injection, and a method of treatment of the present invention using a liquid medicine comprising liquid having carbon dioxide dissolved therein, said liquid being administered by using means of liquid injection can reduce or eliminate tumors with few side effects. When the liquid medicine of the present invention comprising liquid having carbon dioxide dissolved therein, said liquid being administered by using means of liquid injection, and the method of treatment of the present invention using a liquid medicine comprising liquid having carbon dioxide dissolved therein, said liquid being administered by using means of liquid injection are used in combination with surgical therapy, chemotherapy, radiotherapy, or immunotherapy of tumors, effects can be enhanced or side effects can be reduced compared with monotherapy or multidisciplinary therapy thereof.
    Type: Application
    Filed: September 25, 2013
    Publication date: June 18, 2015
    Applicants: NEOCHEMIR INC., NATIONAL UNIVERSITY CORPORATION KOBE UNIVERSITY, CO2BE MEDICAL ENGINEERING K.K.
    Inventors: Masaya Tanaka, Masahiko Miwa, Masahiko Fujii, Masato Yamaguchi
  • Patent number: 8956930
    Abstract: A TFT substrate 50a that includes a transparent substrate 10 and a plurality of TFTs 5a each arranged on the transparent substrate 10 through a base coat film 9 and each having a semiconductor layer 17a, in which the base coat film 9 includes a resin film 11 formed on the transparent substrate 10, and a region of the resin film 11 that overlaps with each of the semiconductor layers 17a has a light-shielding property.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: February 17, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Masahiko Miwa
  • Publication number: 20140127120
    Abstract: The present invention provides a prophylactic or therapeutic agent for fracture and bone diseases as well as a bone growth promoting agent containing carbon dioxide as an active ingredient. Further, according to the present invention, an additive or synergistic effect for preventing or treating fracture and bone diseases as well as for promoting bone growth by combining the therapeutic agent of the present invention and a bone absorption inhibitor and/or a bone formation promoter is obtained.
    Type: Application
    Filed: July 13, 2012
    Publication date: May 8, 2014
    Applicants: NEOCHEMIR INC., NATIONAL UNIVERSITY CORPORATION KOBE UNIVERSITY, CO2BE MEDICAL ENGINEERING K.K.
    Inventors: Keisuke Oe, Takahiro Niikura, Masahiko Miwa, Takeshi Ueha, Masaya Tanaka
  • Publication number: 20140017157
    Abstract: An antitumor agent comprising carbon dioxide as an active ingredient of the present invention can reduce the tumor volume or eradicate the tumor of a patient who is difficult to take a surgical therapy, a chemotherapy, a radiation therapy or an immunotherapy. The antitumor agent comprising carbon dioxide as an active ingredient of the present invention is useful because the agent enables (1) the reduction in size or elimination of a tumor, (2) the suppression of tumor metastasis and also (3) the reduction in volume or elimination of a tumor at a part different from the part where carbon dioxide is transdermally absorbed by the transdermal absorption of carbon dioxide through the skin near the tumor or the skin far from the tumor.
    Type: Application
    Filed: March 22, 2012
    Publication date: January 16, 2014
    Applicants: NEOCHEMIR INC., NATIONAL UNIVERSITY CORPORATION KOBE UNIVERSITY, CO2BE MEDICAL ENGINEERING K.K.
    Inventors: Toshihiro Akisue, Masahiko Miwa, Takeshi Ueha, Masaya Tanaka
  • Publication number: 20130187162
    Abstract: A TFT substrate 50a that includes a transparent substrate 10 and a plurality of TFTs 5a each arranged on the transparent substrate 10 through a base coat film 9 and each having a semiconductor layer 17a, in which the base coat film 9 includes a resin film 11 formed on the transparent substrate 10, and a region of the resin film 11 that overlaps with each of the semiconductor layers 17a has a light-shielding property.
    Type: Application
    Filed: September 29, 2011
    Publication date: July 25, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Masahiko Miwa
  • Publication number: 20130010246
    Abstract: The present invention provides a method for producing an electronic substrate that is provided with highly reliable electronic elements and lines. The method of the present invention provides an electronic substrate which includes a main substrate, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, and a third conductive layer, laminated in the order set forth, and in which the first conductive layer, the second conductive layer, and the third conductive layer are connected together at an opening that penetrates the first insulating layer and the second insulating layer.
    Type: Application
    Filed: January 25, 2011
    Publication date: January 10, 2013
    Inventors: Masahiko Miwa, Masahiro Fujiwara
  • Publication number: 20120093946
    Abstract: Use of a carbon dioxide-supplying means for muscle strengthening makes it possible conveniently to strengthen a target muscle within a short period of time merely by allowing the target site to absorb carbon dioxide without loading any mechanical burden on the target muscle. By loading a mechanical burden on the target muscle, the muscle strengthening effect can be further enhanced and an additional effect of promoting the recovery from muscle fatigue can be achieved owing to the mechanical burden. By using the carbon dioxide-supplying means for muscle strengthening as described above, it is also possible to increase cattle meat.
    Type: Application
    Filed: December 19, 2011
    Publication date: April 19, 2012
    Inventors: Masaya TANAKA, Masahiko Miwa
  • Patent number: 8101210
    Abstract: Use of a carbon dioxide-supplying means for muscle strengthening makes it possible conveniently to strengthen a target muscle within a short period of time merely by allowing the target site to absorb carbon dioxide without loading any mechanical burden on the target muscle. By loading a mechanical burden on the target muscle, the muscle strengthening effect can be further enhanced and an additional effect of promoting the recovery from muscle fatigue can be achieved owing to the mechanical burden. By using the carbon dioxide-supplying means for muscle strengthening as described above, it is also possible to increase cattle meat.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: January 24, 2012
    Assignees: Neochemir Inc., National University Corporation Kobe University
    Inventors: Masaya Tanaka, Masahiko Miwa
  • Publication number: 20100247678
    Abstract: Use of a carbon dioxide-supplying means for muscle strengthening makes it possible conveniently to strengthen a target muscle within a short period of time merely by allowing the target site to absorb carbon dioxide without loading any mechanical burden on the target muscle. By loading a mechanical burden on the target muscle, the muscle strengthening effect can be further enhanced and an additional effect of promoting the recovery from muscle fatigue can be achieved owing to the mechanical burden. By using the carbon dioxide-supplying means for muscle strengthening as described above, it is also possible to increase cattle meat.
    Type: Application
    Filed: October 24, 2008
    Publication date: September 30, 2010
    Inventors: Masaya Tanaka, Masahiko Miwa
  • Patent number: 6730992
    Abstract: To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: May 4, 2004
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai
  • Patent number: 6673659
    Abstract: A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film in which the composition ratios of N, O and H are continuously changed by changing the flow rates of H2 and N2O, is used as the base film to prevent a change in the TFT characteristics. The base film can be formed by varying the flow rates of H2 and N2O in the same film-forming chamber to enhance the productivity.
    Type: Grant
    Filed: January 30, 2001
    Date of Patent: January 6, 2004
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Michinori Iwai
  • Patent number: 6632708
    Abstract: To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: October 14, 2003
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai