Abstract: A memory cell which is a non-volatile memory cell includes a gate insulating film having a charge storage layer capable of retaining charge and a memory gate electrode formed on the gate insulating film. The charge storage layer includes a first insulating film containing hafnium and silicon and a second insulating film formed on the first insulating film and containing hafnium and silicon. Here, a hafnium concentration of the first insulating film is lower than a hafnium concentration of the second insulating film, and a bandgap of the first insulating film is larger than a bandgap of the second insulating film.

Abstract: [Problem to be solved] Provided is an electronic component having thermal insulation properties and insulation resistance, which can be suitably used for modularization by injection molding or the like. [Means to Solve the Problem] There is provided an electronic component comprising a circuit board on which an electronic element is mounted and a coating layer for coating the surface of the circuit board, wherein the coating layer comprises at least a thermoplastic resin and hollow particles; and the coating layer has a concentration gradient of hollow particles in the thickness direction such that the content of the hollow particles in the coating layer is lower on the face side in contact with the circuit board.

Abstract: A non-aqueous electrolyte secondary battery comprises: a positive electrode core; a positive electrode plate having a positive electrode active material layer which is formed on the positive electrode core and contains a positive electrode active material; a negative electrode core; a negative electrode plate having a negative electrode active material layer which is formed on the negative electrode core and contains a negative electrode active material; a separator disposed between the positive and negative electrode plates; and a non-aqueous electrolytic solution, wherein the non-aqueous electrolytic solution contains lithium bis(oxalate) borate, and the value of A/B is 2-11, where A (?mol) is the total amount of lithium bis(oxalate) borate contained in the non-aqueous electrolytic solution, and B(m2) is the total area of the negative electrode active material contained in the region of the negative electrode active material layer facing the positive electrode active material layer with the separator thereb

Abstract: The present invention is to provide a coating agent that can form a coated layer having uniform heat insulating properties and suppress the electronic component from being damaged due to partial re-melting of solder or thermal expansion of the resin. The coating agent according to the present invention comprises (A) a thermoplastic resin, (B) an organic solvent, (C) a thixotropic agent, and (D) hollow particles.

Abstract: The performances of a semiconductor device of a memory element are improved. Over a semiconductor substrate, a gate electrode for memory element is formed via overall insulation film of gate insulation film for memory element. The overall insulation film has first insulation film, second insulation film over first insulation film, third insulation film over second insulation film, fourth insulation film over third insulation film, and fifth insulation film over fourth insulation film. The second insulation film is an insulation film having charge accumulation function. Each band gap of first insulation film and third insulation film is larger than the band gap of second insulation film. The third insulation film is polycrystal film including high dielectric constant material containing metallic element and oxygen. Fifth insulation film is polycrystal film including the same material as that for third insulation film. Fourth insulation film includes different material from that for third insulation film.

Abstract: A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film. The charge storage layer includes an insulating film containing hafnium, silicon, and oxygen, an insertion layer formed on the insulating film and containing aluminum, and an insulating film formed on the insertion layer and containing hafnium, silicon, and oxygen.

Abstract: To improve the performance of a semiconductor device, the semiconductor device includes an insulating film portion over a semiconductor substrate. The insulating film portion includes an insulating film containing silicon and oxygen, a first charge storage film containing silicon and nitrogen, an insulating film containing silicon and oxygen, a second charge storage film containing silicon and nitrogen, and an insulating film containing silicon and oxygen. The first charge storage film is included by two charge storage films.

Abstract: A method for manufacturing a nonaqueous electrolyte secondary battery which includes an electrode assembly, a housing with an opening and contains the electrode assembly, and a sealing member sealing the opening, the electrode assembly comprising a positive electrode and a negative electrode. The positive electrode includes a positive electrode active material, lithium carbonate, and lithium phosphate, the negative electrode comprising a negative electrode active material. The method includes placing the electrode assembly in the housing, and placing a nonaqueous electrolyte containing lithium fluorosulfonate in the housing.

Abstract: A vehicle control system is provided, which includes a steering angle detector configured to detect a steering angle of a steering wheel by the operator, the steering wheel is mounted on the vehicle, a speed detector configured to detect a traveling speed of the vehicle, a reaction-force generator configured to generate a reaction force of the steering wheel, and a controller. The controller includes a processor configured to execute a lateral acceleration calculating module to calculate a lateral acceleration based on the traveling speed and the steering angle, a rigidity characteristic setting module to set the reaction force so that a rigidity value that is a ratio of the reaction force to the steering angle increases as the lateral acceleration increases, and a reaction-force control module to control the reaction-force generator so that the reaction force becomes the reaction-force value set by the rigidity characteristic setting module.

Abstract: A nonaqueous electrolyte secondary battery includes an electrode assembly including a negative plate and a positive plate including a positive electrode active material mix layer, a nonaqueous electrolyte, a battery case that houses the electrode assembly and the nonaqueous electrolyte, and a pressure-sensitive safety system that operates when the pressure in the battery case reaches a value greater than or equal to a predetermined value. The positive electrode active material mix layer contains lithium carbonate and lithium phosphate. The average particle size of lithium carbonate contained in the positive electrode active material mix layer is greater than the average particle size of lithium phosphate contained in the positive electrode active material mix layer. The number of particles of lithium carbonate contained in the positive electrode active material mix layer is less than the number of particles of lithium phosphate contained in the positive electrode active material mix layer.

Abstract: A vehicle control system is provided, which includes an operating amount detector configured to detect an operating amount by an operator, of an operation mechanism comprising at least one of an accelerator pedal and a brake pedal, a speed detector configured to detect a vehicle traveling speed, a reaction-force generator configured to generate a reaction force of the pedal, and a controller. The controller includes a processor to execute an acceleration calculating module to calculate an acceleration based on the traveling speed and the operating amount, a rigidity characteristic setting module to set the reaction force so that a rigidity value that is a ratio of the reaction force to the operating amount increases as the acceleration increases, and a reaction-force control module to control the reaction-force generator so that the reaction force generated by the reaction-force generator becomes the reaction-force value set by the rigidity characteristic setting module.

Abstract: The performances of a semiconductor device of a memory element are improved. Over a semiconductor substrate, a gate electrode for memory element is formed via overall insulation film of gate insulation film for memory element. The overall insulation film has first insulation film, second insulation film over first insulation film, third insulation film over second insulation film, fourth insulation film over third insulation film, and fifth insulation film over fourth insulation film. The second insulation film is an insulation film having charge accumulation function. Each band gap of first insulation film and third insulation film is larger than the band gap of second insulation film. The third insulation film is polycrystal film including high dielectric constant material containing metallic element and oxygen. Fifth insulation film is polycrystal film including the same material as that for third insulation film. Fourth insulation film includes different material from that for third insulation film.

Abstract: The performances of a semiconductor device of a memory element are improved. Over a semiconductor substrate, a gate electrode for memory element is formed via overall insulation film of gate insulation film for memory element. The overall insulation film has first insulation film, second insulation film over first insulation film, third insulation film over second insulation film, fourth insulation film over third insulation film, and fifth insulation film over fourth insulation film. The second insulation film is an insulation film having charge accumulation function. Each band gap of first insulation film and third insulation film is larger than the band gap of second insulation film. The third insulation film is polycrystal film including high dielectric constant material containing metallic element and oxygen. Fifth insulation film is polycrystal film including the same material as that for third insulation film. Fourth insulation film includes different material from that for third insulation film.

Abstract: A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film. The charge storage layer includes an insulating film containing hafnium, silicon, and oxygen, an insertion layer formed on the insulating film and containing aluminum, and an insulating film formed on the insertion layer and containing hafnium, silicon, and oxygen.

Abstract: A vehicle control system is provided, which includes a steering angle detector configured to detect a steering angle of a steering wheel by the operator, the steering wheel is mounted on the vehicle, a speed detector configured to detect a traveling speed of the vehicle, a reaction-force generator configured to generate a reaction force of the steering wheel, and a controller. The controller includes a processor configured to execute a lateral acceleration calculating module to calculate a lateral acceleration based on the traveling speed and the steering angle, a rigidity characteristic setting module to set the reaction force so that a rigidity value that is a ratio of the reaction force to the steering angle increases as the lateral acceleration increases, and a reaction-force control module to control the reaction-force generator so that the reaction force becomes the reaction-force value set by the rigidity characteristic setting module.

Abstract: A vehicle control system is provided, which includes an operating amount detector configured to detect an operating amount by an operator, of an operation mechanism comprising at least one of an accelerator pedal and a brake pedal, a speed detector configured to detect a vehicle traveling speed, a reaction-force generator configured to generate a reaction force of the pedal, and a controller. The controller includes a processor to execute an acceleration calculating module to calculate an acceleration based on the traveling speed and the operating amount, a rigidity characteristic setting module to set the reaction force so that a rigidity value that is a ratio of the reaction force to the operating amount increases as the acceleration increases, and a reaction-force control module to control the reaction-force generator so that the reaction force generated by the reaction-force generator becomes the reaction-force value set by the rigidity characteristic setting module.

Abstract: A method for manufacturing a nonaqueous electrolyte secondary battery which includes an electrode assembly, a housing with an opening and contains the electrode assembly, and a sealing member sealing the opening, the electrode assembly comprising a positive electrode and a negative electrode. The positive electrode includes a positive electrode active material, lithium carbonate, and lithium phosphate, the negative electrode comprising a negative electrode active material. The method includes placing the electrode assembly in the housing, and placing a nonaqueous electrolyte containing lithium fluorosulfonate in the housing.

Abstract: The performances of a semiconductor device of a memory element are improved. Over a semiconductor substrate, a gate electrode for memory element is formed via overall insulation film of gate insulation film for memory element. The overall insulation film has first insulation film, second insulation film over first insulation film, third insulation film over second insulation film, fourth insulation film over third insulation film, and fifth insulation film over fourth insulation film. The second insulation film is an insulation film having charge accumulation function. Each band gap of first insulation film and third insulation film is larger than the band gap of second insulation film. The third insulation film is polycrystal film including high dielectric constant material containing metallic element and oxygen. Fifth insulation film is polycrystal film including the same material as that for third insulation film. Fourth insulation film includes different material from that for third insulation film.

Abstract: A nonaqueous electrolyte secondary battery includes a prismatic housing having an opening and a sealing member sealing the opening. The prismatic housing contains a flat-wound electrode assembly and a nonaqueous electrolyte. The flat-wound electrode assembly includes a positive electrode and a negative electrode. The positive electrode includes a positive electrode substrate and a positive electrode active material mixture layer formed on the positive electrode substrate. The positive electrode active material mixture layer contains lithium carbonate and lithium phosphate. The nonaqueous electrolyte contains lithium fluorosulfonate.

Abstract: A memory cell includes a control gate electrode and a memory gate electrode. The control gate electrode is formed over the upper surface and the sidewall of a fin FA including apart of a semiconductor substrate. The memory gate electrode is formed over one side surface of the control gate electrode and the upper surface and the sidewall of the fin through an ONO film, in a position adjacent to the one side surface of the control gate electrode. Further, the control gate electrode and the memory gate electrode are formed of n-type polycrystalline silicon. A first metal film is provided between the gate electrode and the control gate electrode. A second metal film is provided between the ONO film and the memory gate electrode. A work function of the first metal film is greater than a work function of the second metal film.