Abstract: Provided are a light diffuser in which the brightness or hue in an emission surface of the light diffuser is controlled, a lighting device, and a method of manufacturing such a light diffuser. A light diffuser (100) includes: an incident surface (121) to receive first light (Li); a light scattering portion (110) that includes light scattering particles (112) present in a medium (111) and generates scattered light by guiding the received first light and scattering the received first light with the light scattering particles; and an emission surface (122) to emit the scattered light, wherein a concentration of the light scattering particles in the light scattering portion is distributed such that the concentration increases non-linearly and continuously or discontinuously with distance from an incident edge in a light guiding direction of the first light in the light scattering portion.

Abstract: There is provided a method of producing circuit boards, including a bonding step of bonding joints of an FC-BGA circuit board component with respective joints of an interposer, followed by a resin supply step of filling an underfill in a gap between the FC-BGA circuit board component and the interposer, a resin curing step of curing the underfill, and a support release step of releasing a support from the interposer, which are performed through a sequence of the support release step, the resin supply step, and the resin curing step.

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a CPU and an accelerator. The accelerator includes a first memory circuit and an arithmetic circuit. The first memory circuit includes a first transistor. The first transistor includes a semiconductor layer containing a metal oxide in a channel formation region. The arithmetic circuit includes a second transistor. The second transistor includes a semiconductor layer containing silicon in a channel formation region. The first transistor and the second transistor are provided to be stacked. The CPU includes a CPU core including a flip-flop provided with a backup circuit. The backup circuit includes a third transistor. The third transistor includes a semiconductor layer containing a metal oxide in a channel formation region.

Abstract: A total heat exchange element-purpose flow channel plate is formed from a resin composition having heat conductivity and moisture permeability, containing at least one base material of a first base material and a second base material, and a moisture permeable material. The first base material is a polypropylene having a long chain branched hydrocarbon structure. The second base material is a polypropylene with addition of a low-density polyethylene having a branched structure. The moisture permeable material is a block copolymer based on a polyethylene glycol as a raw material.

Abstract: A database stores inventory status information indicating the inventory status of parts and delivery status information indicating the delivery status of the parts, and a part preparation device acquires part identification information indicating a part that is needed, required quantity information indicating the quantity of parts needed, and required timing information indicating when the part is needed, and selects a securement site for securing the required part based on the part identification information, required quantity information, required timing information that were acquired, as well as on inventory status information and delivery status information that are stored in the database.

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

Abstract: Provided is an electromagnetic field shielding plate, etc., in which it is possible to reduce weight while achieving high shielding performance from relatively high-frequency electromagnetic fields. The electromagnetic field shielding plate is configured by layering a permalloy layer 3 comprising a plate or sheet of permalloy, and an amorphous layer 1 comprising an Fe—Si—B—Cu—Nb-based amorphous plate or sheet.

Abstract: Provided is an electromagnetic field shielding plate, etc., in which it is possible to reduce weight while achieving high shielding performance from relatively high-frequency electromagnetic fields. The electromagnetic field shielding plate is configured by layering a permalloy layer 3 comprising a plate or sheet of permalloy, and an amorphous layer 1 comprising an Fe—Si—B—Cu—Nb-based amorphous plate or sheet.

Abstract: A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), IOFF represents the off-state current, t represents time during which the transistor is off, ? and ? are constants, ? is a constant that satisfies 0<??1, and CS is a constant that represents load capacitance of a source or a drain.

Abstract: Provided are a light diffuser in which the brightness or hue in an emission surface of the light diffuser is controlled, a lighting device, and a method of manufacturing such a light diffuser. A light diffuser (100) includes: an incident surface (121) to receive first light (Li); a light scattering portion (110) that includes light scattering particles (112) present in a medium (111) and generates scattered light by guiding the received first light and scattering the received first light with the light scattering particles; and an emission surface (122) to emit the scattered light, wherein a concentration of the light scattering particles in the light scattering portion is distributed such that the concentration increases non-linearly and continuously or discontinuously with distance from an incident edge in a light guiding direction of the first light in the light scattering portion.

Abstract: A semiconductor device in which energy required for data transfer between an arithmetic device and a memory is reduced is provided. The semiconductor device includes a peripheral circuit and a memory cell array. The peripheral circuit has a function of a driver circuit and a control circuit for the memory cell array, and an arithmetic function. The peripheral circuit includes a sense amplifier circuit and an arithmetic circuit, and the memory cell array includes a memory cell and a bit line. The sense amplifier circuit has a function of determining whether the bit line is at a high level or a low level, and outputs the result to the arithmetic circuit. The arithmetic circuit has a function of performing a product-sum operation, the result of which is output from the semiconductor device.

Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a CPU and an accelerator. The accelerator includes a first memory circuit and an arithmetic circuit. The first memory circuit includes a first transistor. The first transistor includes a semiconductor layer containing a metal oxide in a channel formation region. The arithmetic circuit includes a second transistor. The second transistor includes a semiconductor layer containing silicon in a channel formation region. The first transistor and the second transistor are provided to be stacked. The CPU includes a CPU core including a flip-flop provided with a backup circuit. The backup circuit includes a third transistor. The third transistor includes a semiconductor layer containing a metal oxide in a channel formation region.

Abstract: In a method for generating a chlorine dioxide gas, the chlorine dioxide gas is continuously generated from a gel composition obtained by adding a gelling activator containing a gas generating agent, a gas generation controlling agent containing a carbonate and hydrogen peroxide, a gas generation adjusting agent, and a water-absorbent resin to a chlorite aqueous solution. This provides a method for generating a chlorine dioxide gas, a kit for generating a chlorine dioxide gas, and a gel composition which suppress the initial rapid generation of the chlorine dioxide gas and stably hold the generation of the chlorine dioxide gas for an extremely long time.

Abstract: A semiconductor processing apparatus according to the present invention includes a main body cover that covers a main body device and a control device. The main body cover has a transfer opening for transferring a semiconductor, and the main body cover further has an intake port that generates an air flow in a horizontal direction inside the main body cover.

Abstract: Provided is an electromagnetic field shielding plate, etc., in which it is possible to reduce weight while achieving high shielding performance from relatively high-frequency electromagnetic fields. The electromagnetic field shielding plate is configured by layering a permalloy layer 3 comprising a plate or sheet of permalloy, and an amorphous layer 1 comprising an Fe—Si—B—Cu—Nb-based amorphous plate or sheet.

Abstract: The aqueous chlorine dioxide solution comprises chlorine dioxide, a potassium salt of a weak acid having a pKa of 2.5 or more, and a chlorite, and has a pH of 4.0 or more and 7.5 or less. The method for producing the aqueous chlorine dioxide solution comprises providing a first aqueous solution containing chlorine dioxide, mixing the first aqueous solution and a second aqueous solution containing a potassium salt of a weak acid having a pKa of 2.5 or more to prepare an intermediate aqueous solution having a pH of 4.0 or more and 7.5 or less, and mixing the intermediate aqueous solution and a third aqueous solution containing a chlorite, or mixing the intermediate aqueous solution and the third aqueous solution and then further adding the second aqueous solution thereto, to prepare an aqueous chlorine dioxide solution having a pH of 4.0 or more and 7.5 or less.

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

Abstract: A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), IOFF represents the off-state current, t represents time during which the transistor is off, ? and ? are constants, ? is a constant that satisfies 0<??1, and CS is a constant that represents load capacitance of a source or a drain.