Patents by Inventor Matthew W. Copel

Matthew W. Copel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10970624
    Abstract: Technical solutions are described for forming a semiconductor device for a crosspoint array that implements a pre-programmed neural network. An example method includes sequentially depositing a semiconducting layer, a top insulating layer, and a shunting layer onto a base insulating layer. The method further includes etching selective portions of the top insulating layer corresponding to resistance values associated with weights of the crossbar that implements the neural network.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: April 6, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Matthew W. Copel
  • Patent number: 10930519
    Abstract: A subtractive forming method for piezoresistive material stacks includes applying an etch chemistry to an exposed first portion of a piezoresistive material stack. The etch chemistry includes a citric acid component for removing a first element of a piezoelectric layer of the piezoresistive material stack selectively to a surface oxide. At least one second element of the piezoelectric layer remains. The method further includes heating the piezoresistive material stack after said applying the etch chemistry to vaporize the at least one second element. A second portion of the piezoresistive material stack is protected from the removal and the heating by a mask.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: February 23, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Christine Armstrong, Matthew W. Copel, Yu Luo, Paul M. Solomon
  • Patent number: 10901010
    Abstract: An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.
    Type: Grant
    Filed: May 26, 2019
    Date of Patent: January 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Matthew W. Copel, Michael S. Gordon, Kenneth P. Rodbell
  • Publication number: 20200357995
    Abstract: A method of forming a resistive processing unit is provided. The method includes forming a spacer on a substrate. The method further includes forming an intercalation layer segment on opposite sides of the spacer, and replacing a portion of each of the intercalation layer segments with an insulating region. The method further includes replacing the spacer with an electrolyte layer.
    Type: Application
    Filed: May 7, 2019
    Publication date: November 12, 2020
    Inventors: Matthew W. Copel, Takashi Ando, Ko-Tao Lee, John Rozen
  • Patent number: 10833270
    Abstract: A method of forming a resistive processing unit is provided. The method includes forming a spacer on a substrate. The method further includes forming an intercalation layer segment on opposite sides of the spacer, and replacing a portion of each of the intercalation layer segments with an insulating region. The method further includes replacing the spacer with an electrolyte layer.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: November 10, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Matthew W. Copel, Takashi Ando, Ko-Tao Lee, John Rozen
  • Publication number: 20200227274
    Abstract: A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.
    Type: Application
    Filed: March 27, 2019
    Publication date: July 16, 2020
    Inventors: Christine Armstrong, Matthew W. Copel, Yu Luo, Paul M. Solomon
  • Publication number: 20200027749
    Abstract: A subtractive forming method for piezoresistive material stacks includes applying an etch chemistry to an exposed first portion of a piezoresistive material stack. The etch chemistry includes a citric acid component for removing a first element of a piezoelectric layer of the piezoresistive material stack selectively to a surface oxide. At least one second element of the piezoelectric layer remains. The method further includes heating the piezoresistive material stack after said applying the etch chemistry to vaporize the at least one second element. A second portion of the piezoresistive material stack is protected from the removal and the heating by a mask.
    Type: Application
    Filed: February 11, 2019
    Publication date: January 23, 2020
    Inventors: Christine Armstrong, Matthew W. Copel, Yu Luo, Paul M. Solomon
  • Publication number: 20190293690
    Abstract: An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.
    Type: Application
    Filed: May 26, 2019
    Publication date: September 26, 2019
    Inventors: Matthew W. Copel, Michael S. Gordon, Kenneth P. Rodbell
  • Patent number: 10416199
    Abstract: An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: September 17, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Matthew W. Copel, Michael S. Gordon, Kenneth P. Rodbell
  • Patent number: 10374163
    Abstract: A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: August 6, 2019
    Assignee: International Business Machines Corporation
    Inventors: Matthew W. Copel, Damon B. Farmer, Talia S. Gershon, Paul M. Solomon
  • Patent number: 10354824
    Abstract: A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: July 16, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Matthew W. Copel, Bruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns, Thomas M. Shaw, Paul M. Solomon
  • Patent number: 10332753
    Abstract: A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: June 25, 2019
    Assignee: International Business Machines Corporation
    Inventors: Christine Armstrong, Matthew W. Copel, Yu Luo, Paul M. Solomon
  • Patent number: 10269580
    Abstract: A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: April 23, 2019
    Assignee: International Business Machines Corporation
    Inventors: Christine Armstrong, Matthew W. Copel, Yu Luo, Paul M. Solomon
  • Patent number: 10170702
    Abstract: A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: January 1, 2019
    Assignee: International Business Machines Corporation
    Inventors: Matthew W. Copel, Damon B. Farmer, Talia S. Gershon, Paul M. Solomon
  • Publication number: 20180233378
    Abstract: A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.
    Type: Application
    Filed: January 13, 2017
    Publication date: August 16, 2018
    Inventors: Christine Armstrong, Matthew W. Copel, Yu Luo, Paul M. Solomon
  • Publication number: 20180203045
    Abstract: An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.
    Type: Application
    Filed: January 17, 2017
    Publication date: July 19, 2018
    Inventors: Matthew W. Copel, Michael S. Gordon, Kenneth P. Rodbell
  • Publication number: 20180205000
    Abstract: A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.
    Type: Application
    Filed: November 6, 2017
    Publication date: July 19, 2018
    Inventors: Christine Armstrong, Matthew W. Copel, Yu Luo, Paul M. Solomon
  • Publication number: 20180198070
    Abstract: A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.
    Type: Application
    Filed: January 12, 2017
    Publication date: July 12, 2018
    Inventors: Matthew W. Copel, Damon B. Farmer, Talia S. Gershon, Paul M. Solomon
  • Publication number: 20180198071
    Abstract: A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.
    Type: Application
    Filed: November 3, 2017
    Publication date: July 12, 2018
    Inventors: Matthew W. Copel, Damon B. Farmer, Talia S. Gershon, Paul M. Solomon
  • Publication number: 20180089559
    Abstract: Technical solutions are described for forming a semiconductor device for a crosspoint array that implements a pre-programmed neural network. An example method includes sequentially depositing a semiconducting layer, a top insulating layer, and a shunting layer onto a base insulating layer. The method further includes etching selective portions of the top insulating layer corresponding to resistance values associated with weights of the crossbar that implements the neural network.
    Type: Application
    Filed: February 16, 2017
    Publication date: March 29, 2018
    Inventor: MATTHEW W. COPEL