Abstract: An array antenna device includes a plurality of slot array antennas which are arranged and each of which includes a plurality of slot antennas and a radiation surface, which is formed to be conformal, and a plurality of waveguides each of which supplies respective power to each of the slot array antennas. After bodies of the waveguides are formed by a resin molding method, surface treatment is performed with respect to inner surfaces of the waveguides with plating.

Abstract: A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeOx on the surface of the Ge-based substrate and to stop mutual diffusion between the gate dielectric and the Ge-based substrate, the interface property between Ge and the high-k gate dielectric layer is improved.

Abstract: The present invention provides a method for preparing an ultra-thin material on insulator through adsorption by a doped ultra-thin layer. In the method, first, an ultra-thin doped single crystal film and an ultra-thin top film (or contains a buffer layer) are successively and epitaxially grown on a first substrate, and then a high-quality ultra-thin material on insulator is prepared through ion implantation and a bonding process. A thickness of the prepared ultra-thin material on insulator ranges from 5 nm to 50 nm. In the present invention, the ultra-thin doped single crystal film adsorbs the implanted ion, and a micro crack is then formed, so as to implement ion-cut; therefore, the roughness of a surface of a ion-cut material on insulator is small.

Abstract: Provided is a method for preparing a material on an insulator based on enhanced adsorption. In the method: first, a single crystal film having a doped superlattice structure, an intermediate layer, a buffer layer and a top layer film are epitaxially grown in succession on a first substrate; then, low dosage ion implantation is performed on the structure on which the top layer film is formed, so that ions are implanted above an upper surface or below a lower surface of the single crystal film having a doped superlattice structure; next, a second substrate having an insulation layer is bonded to the structure on which ion implantation has already been performed, and an annealing treatment is performed, so that a microscopic crack is produced at the single crystal film having a doped superlattice structure to achieve atomic-scale stripping. The effective stripping of bonding wafers is achieved by means of enhanced adsorption.

Abstract: A communication method of MTC devices in the field of communication technologies, including: grouping, by a network side, first MTC devices according to time when the first MTC devices access a network, where the grouping is so performed that MTC devices accessing the network at same time are grouped into different groups, and MTC devices accessing the network at different time are grouped into a same group; and sending, after the first MTC devices access the network, group information to the first MTC devices, so that the first MTC devices receive and/or send data according to the group information. Embodiments of the present invention further provide a related communication apparatus of MTC devices. Embodiments of the present invention realize scattering time for MTC devices to access a network for sending data, thereby avoiding collisions and effectively easing the burden resulted from MTC devices accessing the network concurrently.

Abstract: A method and system for accessing a network are disclosed in the present invention. The method includes that: terminals in a same group execute random number synchronization; when an arbitrary first terminal in the group initiates network access, terminals in the group except the first terminal monitor the access of the first terminal according to the synchronized random number; after monitoring that the first terminal accesses network successfully, the terminals in the group except the first terminal initiate network access by using Radio Resource Control (RRC) connection uplink resources which are allocated to the group by the network. The technical solution of the present invention can reduce the signaling overhead for establishing signaling connection and data bearing.

Abstract: A working tool includes a housing (10) and a lever (3) having a gap defined therein for accommodating a rotatable switch lock (1). The switch lock has a first engagement portion (1a) defined on a first side and a stopper portion (1b) defined on a second side, and the lever has a support portion (3a) proximal to the first engagement portion. A handle portion of the housing has a left push button (8) and a right push button (5) inserted therein, a first groove (8a) and a second groove (8b) of the left push button (8) and right push button (5) each having a second engagement portion formed on a groove wall thereof, each of a first extension section (3a-2) and second extension sections (3a-1) being provided with, at a side facing a corresponding second engagement portion, a third engagement portion engageable with the corresponding second engagement portion.

Abstract: A method for measuring a carrier in deactivated state is provided in this invention, comprising receiving a configuration mode that does not take effect immediately by a user terminal UE; if a deactivation control signaling for a carrier is received by the UE or if a carrier timer of the UE expires, switching the carrier from activated state to deactivated state, and measuring the carrier in deactivated state by the UE; or if an activation control signaling for a carrier in deactivated state that is being measured is received by the UE, terminating measurement of the carrier in deactivated state by the UE. Through controllable deactivated carrier measurement, the UE reduces battery power consumption and improves system performance. This invention also discloses an apparatus for measuring a carrier in deactivated state and a base station.

Abstract: The present invention discloses a network connection method and system. The method includes: grouping a plurality of terminals, allocating group identities, and establishing a mapping relationship between the group identities and terminal identities; establishing a group-based signaling radio bearer and a group-based data radio bearer for each group; allocating, when a terminal in each group access a network, the terminal the group-based signaling radio bearer and group-based data radio bearer corresponding to the group to which the terminal belongs according to a mapping relationship between a group identities and a terminal identity, so that the terminals initiate network access by using the group-based signaling radio bearer and the group-based data radio bearer. The signaling overhead of establishing signaling connection and data bearer may be reduced though the technical solution of the present invention.

Abstract: An icing detector probe includes three sections arranged sequentially along the direction of air flow, namely, a first section, a second section and a third section. The shape of the outer surface of the first section is suitable for collecting droplets in the air flow. The shape of the outer surface of the second section is suitable for full decelerating and releasing latent heat of large droplets during their movements. The outer surface of the third section is suitable for icing of large droplets. The probe detects icing by distinguishing and identify large droplets icing. The probe effectively detects types of traditional icing, thus being helpful for exact detection of icing thickness. An icing detector including said icing detector probe is also provided.

Abstract: The present invention provides a method for preparing an ultra-thin material on insulator through adsorption by a doped ultra-thin layer. In the method, first, an ultra-thin doped single crystal film and an ultra-thin top film (or contains a buffer layer) are successively and epitaxially grown on a first substrate, and then a high-quality ultra-thin material on insulator is prepared through ion implantation and a bonding process. A thickness of the prepared ultra-thin material on insulator ranges from 5 nm to 50 nm. In the present invention, the ultra-thin doped single crystal film adsorbs the implanted ion, and a micro crack is then formed, so as to implement ion-cut; therefore, the roughness of a surface of a ion-cut material on insulator is small.

Abstract: There is provided a lighting apparatus and a method for reducing discomfort glare. The method comprises a step of providing a first portion of light radiation in a first incident angle range; and another step of providing a second portion of light radiation in a second incident angle range consecutive to the first incident angle range. The first incident angle range is greater than the second incident angle range viewed from a vertically downward direction of a light source emitting the light radiation, and the correlated color temperature of the first portion of light radiation is lower than that of the second portion of light radiation.

Abstract: A method for measuring a carrier in a deactivated state. The method includes receiving a configuration mode that does not take effect immediately by a user terminal (UE). If a deactivation control signal for a carrier is received by the UE or if a carrier timer of the UE expires, then the method includes switching the carrier from an activated state to a deactivated state, and measuring the carrier in deactivated state by the UE. Alternatively, if an activation control signal for a carrier in the deactivated state that is being measured is received by the UE, the method includes terminating measurement of the carrier in the deactivated state by the UE. Through controllable deactivated carrier measurement, the UE reduces battery power consumption and improves system performance. Embodiments also include an apparatus for measuring a carrier in deactivated state, a base station, and computer-readable storage medium for performing the method.

Abstract: A working tool includes a housing (10) and a lever (3) having a gap defined therein for accommodating a rotatable switch lock (1). The switch lock has a first engagement portion (1a) defined on a first side and a stopper portion (1b) defined on a second side, and the lever has a support portion (3a) proximal to the first engagement portion. A handle portion of the housing has a left push button (8) and a right push button (5) inserted therein, a first groove (8a) and a second groove (8b) of the left push button (8) and right push button (5) each having a second engagement portion formed on a groove wall thereof, each of a first extension section (3a-2) and second extension sections (3a-1) being provided with, at a side facing a corresponding second engagement portion, a third engagement portion engageable with the corresponding second engagement portion.

Abstract: The present invention provides a method for preparing a GOI chip structure, where, in the method, first, a SiGe on insulator (SGOI) chip structure is made by using a SMART CUT technology, and then, germanium condensation technology is performed on the SGOI chip structure, so as to obtain a GOI chip structure. Because the SGOI made by the Smart-Cut technology basically has no misfit dislocation in an SGOI/BOX interface, the threading dislocation density of the GOI is finally reduced. A technique of the present invention is simple, the high-quality GOI chip structure can be implemented, and the germanium condensation technology is greatly improved. An ion implantation technology and an annealing technology are quite mature techniques in the current semiconductor industry, so that such a preparation method greatly improves the possibility of wide use of the germanium concentration technology in the semiconductor industry.

Abstract: A rotary damper with a toothed wheel gear projecting away from a housing having snap-in connection structures disposed on opposing sides of the wheel gear. The wheel gear may be inserted through a panel opening having a pair of opposing transverse slots. In the assembled condition, the housing with the connected wheel gear may slide linearly in the longitudinal direction of the slots to permit self-adjustment relative to an operatively connected mating gear. Proper meshing relation between the wheel gear and the mating gear is thereby maintained.

Abstract: A silicon/germanium (SiGe) heterojunction Tunnel Field Effect Transistor (TFET) and a preparation method thereof are provided, in which a source region of a device is manufactured on a silicon germanium (SiGe) or Ge region, and a drain region of the device is manufactured in a Si region, thereby obtaining a high ON-state current while ensuring a low OFF-state current. Local Ge oxidization and concentration technique is used to implement a Silicon Germanium On Insulator (SGOI) or Germanium On Insulator (GOI) with a high Ge content in some area. In the SGOI or GOI with a high Ge content, the Ge content is controllable from 50% to 100%. In addition, the film thickness is controllable from 5 nm to 20 nm, facilitating the implementation of the device process. During the oxidization and concentration process of the SiGe or Ge and Si, a SiGe heterojunction structure with a gradient Ge content is formed between the SiGe or Ge and Si, thereby eliminating defects.

Abstract: A silicon/germanium (SiGe) heterojunction Tunnel Field Effect Transistor (TFET) and a preparation method thereof are provided, in which a source region of a device is manufactured on a silicon germanium (SiGe) or Ge region, and a drain region of the device is manufactured in a Si region, thereby obtaining a high ON-state current while ensuring a low OFF-state current. Local Ge oxidization and concentration technique is used to implement a Silicon Germanium On Insulator (SGOI) or Germanium On Insulator (GOI) with a high Ge content in some area. In the SGOI or GOI with a high Ge content, the Ge content is controllable from 50% to 100%. In addition, the film thickness is controllable from 5 nm to 20 nm, facilitating the implementation of the device process. During the oxidization and concentration process of the SiGe or Ge and Si, a SiGe heterojunction structure with a gradient Ge content is formed between the SiGe or Ge and Si, thereby eliminating defects.

Abstract: A blower fan including a motor having a rotating shaft, a bracket, a fan housing having a cavity, a fan wheel, and fan blades. The motor is disposed on the fan housing via the bracket. An extended portion of the rotating shaft extends into the cavity of the fan housing and connects with the fan wheel. The fan blades are disposed on the rotating shaft and between the motor and the fan housing. On the casing of the motor is disposed with air vents. The bracket forms an annular side wall. A cavity is formed inside the annular side wall. The annular side wall is outfitted with air outlets which are connected with the cavity of the annular side wall and the fan blades are disposed in the cavity.

Abstract: The instant disclosure provides a push latch having a pivotally mounted blocking hammer including a head with a lever arm extending away from the head to a counter-weight. Under normal operating conditions, the hammer is held in an inert/balanced condition. Under such normal conditions, a portion of the hammer head may be in periodic contact with a resin of tacky character defining a bumper to aid in dampening vibration. Upon the occurrence of a high impact force, the rotational force provided by the counterweight is sufficient to cause the hammer to rotate into blocking relation relative to the latching mechanism so as to prevent unlatching. In the rotated condition, the counterweight may be in contact with an optional resin of tacky character defining a bumper to reduce rebound action.