Patents by Inventor Michael R Krames

Michael R Krames has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Package-integrated thin film LED
    Patent number: 8455913
    Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: June 4, 2013
    Assignee: Phiips Lumileds Lighting Company LLC
    Inventors: John Epler, Paul S. Martin, Michael R. Krames
  • Series connected flip chip LEDs with growth substrate removed
    Patent number: 8450754
    Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.
    Type: Grant
    Filed: October 10, 2011
    Date of Patent: May 28, 2013
    Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLC
    Inventors: Michael R. Krames, John E. Epler, Daniel A. Steigerwald, Tal Margalith
  • Wavelength-converted semiconductor light emitting device
    Patent number: 8445929
    Abstract: Embodiments of the invention include a light emitting structure comprising a light emitting layer. A first luminescent material comprising a phosphor is disposed in a path of light emitted by the light emitting layer. A second luminescent material comprising a semiconductor is also disposed in a path of light emitted by the light emitting layer. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength. In some embodiments, one of the first and second luminescent materials may be bonded to the semiconductor structure.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: May 21, 2013
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Michael R. Krames, Gerd O. Mueller
  • Light emitting devices with improved light extraction efficiency
    Patent number: 8415694
    Abstract: A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.
    Type: Grant
    Filed: February 23, 2010
    Date of Patent: April 9, 2013
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach, Gloria E. Hofler
  • Substrate for growing a III-V light emitting device
    Patent number: 8334155
    Abstract: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
    Type: Grant
    Filed: September 27, 2005
    Date of Patent: December 18, 2012
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Michael R. Krames, Nathan F. Gardner, John E. Epler
  • III-V light emitting device including a light extracting structure
    Patent number: 8334543
    Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: December 18, 2012
    Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLC
    Inventors: Aurelien J. F. David, Michael R. Krames, Melvin B. McLaurin
  • Substrate for growing a III-V light emitting device
    Patent number: 8288186
    Abstract: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
    Type: Grant
    Filed: September 22, 2010
    Date of Patent: October 16, 2012
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Michael R. Krames, Nathan F. Gardner, John E. Epler
  • Luminescent ceramic element for a light emitting device
    Patent number: 8278674
    Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 ?m.
    Type: Grant
    Filed: February 23, 2009
    Date of Patent: October 2, 2012
    Assignees: Philips Lumileds Lighting Company LLC, Koninklijke Philips Electronics N.V.
    Inventors: Michael R. Krames, Peter J. Schmidt
  • III-V LIGHT EMITTING DEVICE INCLUDING A LIGHT EXTRACTING STRUCTURE
    Publication number: 20120241798
    Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
    Type: Application
    Filed: April 30, 2012
    Publication date: September 27, 2012
    Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Aurelien J.F. David, Michael R. Krames, Melvin B. McLaurin
  • RELAXATION OF STRAINED LAYERS
    Publication number: 20120214291
    Abstract: A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.
    Type: Application
    Filed: April 27, 2012
    Publication date: August 23, 2012
    Applicant: SOITEC
    Inventors: Fabrice Letertre, Carlos Mazure, Michael R. Krames, Melvin B. McLaurin, Nathan F. Gardner
  • Method for Growth of Indium-Containing Nitride Films
    Publication number: 20120199952
    Abstract: A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.
    Type: Application
    Filed: January 9, 2012
    Publication date: August 9, 2012
    Applicant: Soraa, Inc.
    Inventors: Mark P. D'Evelyn, Christiane Poblenz, Michael R. Krames
  • CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20120187372
    Abstract: An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 ?m in some embodiments, less than 10 ?m in some embodiments. The top side of the semiconductor structure may be textured.
    Type: Application
    Filed: March 19, 2012
    Publication date: July 26, 2012
    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC
    Inventors: Rafael I. Aldaz, John E. Epler, Patrick N. Grillot, Michael R. Krames
  • Grown Photonic Crystals in Semiconductor Light Emitting Devices
    Publication number: 20120161187
    Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
    Type: Application
    Filed: February 24, 2012
    Publication date: June 28, 2012
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Jonathan J. Wierer, JR., Michael R. Krames, Nathan F. Gardner
  • III-V light emitting device including a light extracting structure
    Patent number: 8203153
    Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: June 19, 2012
    Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds LightingCompany, LLC
    Inventors: Aurelien J. F. David, Michael R. Krames, Melvin B. McLaurin
  • Semiconductor light emitting device including porous layer
    Patent number: 8174025
    Abstract: A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.
    Type: Grant
    Filed: June 9, 2006
    Date of Patent: May 8, 2012
    Assignee: Philips Lumileds Lighting Company, LLC
    Inventors: John E. Epler, Michael R. Krames, Hanmin Zhao, James C. Kim
  • Grown photonic crystals in semiconductor light emitting devices
    Patent number: 8163575
    Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: April 24, 2012
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Jonathan J. Wierer, Jr., Michael R. Krames, Nathan F. Gardner
  • LIGHT EMITTING DEVICE INCLUDING A PHOTONIC CRYSTAL AND A LUMINESCENT CERAMIC
    Publication number: 20120074448
    Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region and a photonic crystal formed within or on a surface of the semiconductor structure is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor.
    Type: Application
    Filed: December 2, 2011
    Publication date: March 29, 2012
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Jonathan J. Wierer, JR., SERGE BIERHUIZEN, AURELIEN J.F. DAVID, MICHAEL R. KRAMES, RICHARD J. WEISS
  • System and Method for Selected Pump LEDs with Multiple Phosphors
    Publication number: 20120043552
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Application
    Filed: August 16, 2011
    Publication date: February 23, 2012
    Applicant: Soraa, Inc.
    Inventors: Aurelien J. F. David, Troy Trottier, Frank M. Steranka, Michael R. Krames
  • COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LIGHT EMITTING DEVICES
    Publication number: 20120043564
    Abstract: A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.
    Type: Application
    Filed: November 3, 2011
    Publication date: February 23, 2012
    Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: MICHAEL D. CAMRAS, WILLIAM R. IMLER, FRANKLIN J. WALL, JR., FRANK M. STERANKA, MICHAEL R. KRAMES, HELENA TICHA, LADISLAV TICHY, Robertus G. Alferink
  • Light source including a wavelength-converted semiconductor light emitting device and a filter
    Patent number: 8114692
    Abstract: A semiconductor light emitting device comprises a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer is adapted to emit first light having a first peak wavelength. A first wavelength converting material is adapted to absorb the first light and emit second light having a second peak wavelength. A second wavelength converting material is adapted to absorb either the first light or the second light and emit third light having a third peak wavelength. A filter is adapted to reflect fourth light having a fourth peak wavelength. The fourth light is either a portion of the second light or a portion of the third light. The filter is configured to transmit light having a peak wavelength longer or shorter than the fourth peak wavelength. The filter is disposed over the light emitting device in the path of at least a portion of the first, second, and third light.
    Type: Grant
    Filed: January 6, 2011
    Date of Patent: February 14, 2012
    Assignees: Philips Lumileds Lighting Company, LLC, Koninklijke Philips Electronics N.V.
    Inventor: Michael R. Krames