Abstract: A semiconductor memory device has a plastic package including an inductor, a first memory chip including a booster circuit that boosts a voltage from a first voltage to a second voltage using the inductor, and a second memory chip having a terminal supplied with the second voltage from the first memory chip.

Abstract: According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.

Abstract: According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.

Abstract: A semiconductor device manufacturing method of an embodiment includes forming a first layer in a region of a first substrate excluding an outer peripheral portion thereof; forming a first semiconductor circuit above the first layer; for a second semiconductor circuit on a second substrate; forming a second layer with a predetermined width at an outer peripheral portion of the second substrate; bonding a surface of the first substrate on a side provided with the first semiconductor circuit and a surface of the second substrate on a side provided with the second semiconductor circuit; and applying tensile stress to the first layer and the second layer to debond the first layer and the second layer, thereby forming the second substrate including the first semiconductor circuit and the second semiconductor circuit.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first semiconductor layer including impurity atoms with a first density, on a first substrate, forming a second semiconductor layer including impurity atoms with a second density higher than the first density, on the first semiconductor layer, and forming a porous layer resulting from porosification of at least a portion of the second semiconductor layer. The method further includes forming a first film including a device, on the porous layer, providing a second substrate provided with a second film including a device, and bonding the first and second substrates to sandwich the first and second films. The method further includes separating the first and second substrates from each other such that a first portion of the porous layer remains on the first substrate and a second portion of the porous layer remains on the second substrate.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first semiconductor layer including impurity atoms with a first density, on a first substrate, forming a second semiconductor layer including impurity atoms with a second density higher than the first density, on the first semiconductor layer, and forming a porous layer resulting from porosification of at least a portion of the second semiconductor layer. The method further includes forming a first film including a device, on the porous layer, providing a second substrate provided with a second film including a device, and bonding the first and second substrates to sandwich the first and second films. The method further includes separating the first and second substrates from each other such that a first portion of the porous layer remains on the first substrate and a second portion of the porous layer remains on the second substrate.

Abstract: A memory system has a memory, a first substrate on which the memory is mounted and which is set to a temperature of ?40[° C.] or lower, a controller configured to control the memory; and a second substrate on which the controller is mounted, which is set to a temperature of ?40[° C.] or higher, and which transmits and receives a signal to and from the first substrate via a signal transmission cable.

Abstract: A semiconductor memory device has a plastic package including an inductor, a first memory chip including a booster circuit that boosts a voltage from a first voltage to a second voltage using the inductor, and a second memory chip having a terminal supplied with the second voltage from the first memory chip.

Abstract: In a manufacturing method of a semiconductor device according to an embodiment, a first substrate having a first elastic modulus is joined onto a second substrate having a second elastic modulus higher than the first elastic modulus. A first semiconductor element is formed on the first substrate. The first substrate is detached from the second substrate.

Abstract: According to one embodiment, an anodization apparatus includes: a first process tank configured to perform an anodization process on a substrate; a holder configured to hold the substrate; and a first electrolyte supply system configured to supply a first electrolyte to the first process tank. The holder immerses the substrate in the first electrolyte in a state where the substrate is inclined with respect to a liquid level of the first electrolyte. The anodization process is executed in a state where the substrate is inclined with respect to the liquid level of the first electrolyte.

Abstract: A semiconductor device according to an embodiment includes a first substrate including a first insulating layer, a first conductive layer provided in the first insulating layer, a first metal layer provided in the first insulating layer, and a second metal layer provided between the first metal layer and the first conductive layer, a linear expansion coefficient of the second metal layer being higher than that of the first metal layer; and a second substrate including a second insulating layer, and a third metal layer provided in the second insulating layer, in contact with the first metal layer. The second substrate contacts with the first substrate.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first semiconductor layer including impurity atoms with a first density, on a first substrate, forming a second semiconductor layer including impurity atoms with a second density higher than the first density, on the first semiconductor layer, and forming a porous layer resulting from porosification of at least a portion of the second semiconductor layer. The method further includes forming a first film including a device, on the porous layer, providing a second substrate provided with a second film including a device, and bonding the first and second substrates to sandwich the first and second films. The method further includes separating the first and second substrates from each other such that a first portion of the porous layer remains on the first substrate and a second portion of the porous layer remains on the second substrate.

Abstract: A memory system has a memory, a first substrate on which the memory is mounted and which is set to a temperature of ?40[° C.] or lower, a controller configured to control the memory; and a second substrate on which the controller is mounted, which is set to a temperature of ?40[° C.] or higher, and which transmits and receives a signal to and from the first substrate via a signal transmission cable.

Abstract: A semiconductor device according to the embodiments includes: a first substrate having a plurality of first through-holes; a plurality of first electrodes provided on the first substrate to be adjacent to the respective first through-holes; a plurality of second electrodes provided on the first substrate to be adjacent to the respective first through-holes and to face the respective first electrodes; and a second substrate provided to face the first substrate, the second substrate having a plurality of second through-holes facing the respective first through-holes, at least a surface of the second substrate facing the first substrate having conductivity, the second substrate being electrically connected to the second electrodes.

Abstract: A semiconductor device manufacturing method of an embodiment includes forming a first layer in a region of a first substrate excluding an outer peripheral portion thereof; forming a first semiconductor circuit above the first layer; for a second semiconductor circuit on a second substrate; forming a second layer with a predetermined width at an outer peripheral portion of the second substrate; bonding a surface of the first substrate on a side provided with the first semiconductor circuit and a surface of the second substrate on a side provided with the second semiconductor circuit; and applying tensile stress to the first layer and the second layer to debond the first layer and the second layer, thereby forming the second substrate including the first semiconductor circuit and the second semiconductor circuit.

Abstract: A semiconductor device manufacturing method of an embodiment includes forming a first layer in a region of a first substrate excluding an outer peripheral portion thereof; forming a first semiconductor circuit above the first layer; forming a second semiconductor circuit on a second substrate; forming a second layer with a predetermined width at an outer peripheral portion of the second substrate; bonding a surface of the first substrate on a side provided with the first semiconductor circuit and a surface of the second substrate on a side provided with the second semiconductor circuit; and applying tensile stress to the first layer and the second layer to debond the first layer and the second layer, thereby forming the second substrate including the first semiconductor circuit and the second semiconductor circuit.

Abstract: According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.

Abstract: In a manufacturing method of a semiconductor device according to an embodiment, a first substrate having a first elastic modulus is joined onto a second substrate having a second elastic modulus higher than the first elastic modulus. A first semiconductor element is formed on the first substrate. The first substrate is detached from the second substrate.

Abstract: According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.

Abstract: A semiconductor device manufacturing method of an embodiment includes forming a first layer in a region of a first substrate excluding an outer peripheral portion thereof; forming a first semiconductor circuit above the first layer; forming a second semiconductor circuit on a second substrate; forming a second layer with a predetermined width at an outer peripheral portion of the second substrate; bonding a surface of the first substrate on a side provided with the first semiconductor circuit and a surface of the second substrate on a side provided with the second semiconductor circuit; and applying tensile stress to the first layer and the second layer to debond the first layer and the second layer, thereby forming the second substrate including the first semiconductor circuit and the second semiconductor circuit.