Abstract: A thin film transistor includes a gate electrode having a first length measured in a first direction and a first width measured in a second direction, an active layer having a second length measured in the first direction and a second width measured in the second direction, the second length of the active layer being greater than the first length of the gate electrode, and the second width of the active layer being greater than the first width of the gate electrode, and a source electrode and a drain electrode that are connected to the active layer, wherein at least one of opposite side edges of the gate electrode extending in the first direction is spaced apart from a corresponding opposite side edge of the active layer extending in the first direction.

Abstract: An analog-to-digital converter includes a comparison unit that outputs a result obtained by comparing a voltage of an input node with a comparison voltage; 1st to Nth capacitors having one ends connected to the input node, respectively; and 1st to N?1th voltage selection units corresponds to the 2nd to Nth capacitors, respectively and applies one of a voltages of a 1st node, a 2nd node, and the comparison voltage to the other ends of the corresponding capacitors. An input signal is sampled to the input node, the 1st to N?1th voltage selection units select one of the voltages of the 2 nodes and convert a part of the input signal into a 1st digital signal, and the 1st to N?1th voltage selection units select one of the voltages of the 2 nodes and convert the remaining part of the input signal into a 2nd digital signal.

Abstract: The present disclosure is to provide a movable contact arm capable of securing a revolution radius to a closed position of the movable contact arm such that adhesive materials on the shaft due to arc scattering materials can be removed with no installation of additional elements, and a movable contact arm according to the present disclosure may comprise an adhesive material removal portion formed on a lateral surface at which a contact of the movable contact arm is located, and configured to minimize a contact area with adhesive materials so as to remove the adhesive materials due to an arc.

Abstract: An analog-to-digital converter includes a comparison unit that outputs a result obtained by comparing a voltage of an input node with a comparison voltage; 1st to Nth capacitors having one ends connected to the input node, respectively; and 1st to N?1th voltage selection units corresponds to the 2nd to Nth capacitors, respectively and applies one of a voltages of a 1st node, a 2nd node, and the comparison voltage to the other ends of the corresponding capacitors. An input signal is sampled to the input node, the 1st to N?1th voltage selection units select one of the voltages of the 2 nodes and convert a part of the input signal into a 1st digital signal, and the 1st to N?1th voltage selection units select one of the voltages of the 2 nodes and convert the remaining part of the input signal into a 2nd digital signal.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: A backlight driver and a method of driving the same are disclosed, which remove an unstable duty ratio by filtering an input PWM signal so as to prevent backlight flicker although the input PWM signal becomes unstable. The backlight driver includes a duty ratio detector for detecting a duty ratio of an input pulse width modulation (PWM) signal; a duty ratio filter for detecting a difference between a current duty ratio received from the duty ratio detector and a previous duty ratio, determining whether the detected duty ratio difference satisfies a preset reference condition, selecting one of the current duty ratio and the previous duty ratio, and outputting the selected duty ratio; and a PWM generator for generating an output PWM signal obtained when a selected duty ratio from the duty ratio filter is reflected in an input synchronization signal, and outputting the output PWM signal to a backlight unit.

Abstract: Embodiments of the invention are generally directed to testing of high-speed input-output devices. An embodiment of a high-speed input-output apparatus includes a transmitter and a receiver, and a loop-back connection from an output of the transmitter to an input of the receiver, the loop-back connection including a first connector and a second connector for transmission of differential signals. The apparatus further includes a first inductor having a first terminal and a second terminal and second inductor having a first terminal and a second terminal, the first terminal of the first inductor being connected to the first connector and the first terminal of the second inductor being connected to the second connector, the second terminal of the first inductor and the second terminal of the second inductor providing a test access port for direct current testing of the apparatus.

Abstract: An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

Abstract: Disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: A thin film transistor includes a gate electrode having a first length measured in a first direction and a first width measured in a second direction, an active layer having a second length measured in the first direction and a second width measured in the second direction, the second length of the active layer being greater than the first length of the gate electrode, and the second width of the active layer being greater than the first width of the gate electrode, and a source electrode and a drain electrode that are connected to the active layer, wherein at least one of opposite side edges of the gate electrode extending in the first direction is spaced apart from a corresponding opposite side edge of the active layer extending in the first direction.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: An indoor user positioning method including storing user information on a user terminal and user feature information detected from a feature detection device in a central server, detecting the position of the user terminal periodically and storing the detected position in a database, detecting by a motion recognition device attribute information on a user at the front thereof and transmitting the detected attribute information to the central server, extracting user terminals corresponding to the position of the user that the motion recognition device recognizes from the user terminals stored in the database in order to select target users, and comparing the user feature information on the target users stored in the database with the user attribute information that the motion recognition device transmits in order to specify a user at the front of the motion recognition device.

Abstract: A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.

Abstract: Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

Abstract: A thin film transistor, including a transparent channel pattern, a transparent gate insulating layer in contact with the channel pattern, a passivation film pattern disposed on the channel pattern, a source/drain coupled to the channel pattern through a via hole in the passivation film pattern, and a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).

Abstract: A liquid crystal display device includes a power consumption reduction portion that analyzes a histogram of first image data of an image and generates second image data and a first luminance control signal, wherein, when the image includes an irrelevance region which is substantially irrelevant to degradation of display quality, the power consumption reduction portion analyzes a histogram of first image data of other region of the image except for an excluded region, and wherein the excluded region includes at least the irrelevance region; a timing controller that is supplied with the second image data and the first luminance control signal and generates gate control signals, data control signals and a second luminance control signal; a gate driving portion that generates gate voltages using the gate control signals; a data driving portion that generates data voltages using the second image data and the data control signals; a liquid crystal panel that displays the image using the gate voltages and the data v

Abstract: The analog-to-digital converter includes a signal processing unit generating an operational amplifier output voltage in response to an input voltage and a DAC output voltage in a first period and generating the operational amplifier output voltage in respose to a feedbacked operational amplifier output voltage and the DAC output voltage in a second period; a control unit generating a DAC control signal by comparing the operational amplifier output voltage with a first reference voltage to obtain high order M-bits of data in the first period, and generating the DAC control signal by comparing the operational amplifier output voltage with second and third reference voltages to obtain low order N-bits of data in the second period; and a digital analog converter generating the DAC output voltage in response to the DAC control signal.

Abstract: In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the source electrode and the drain electrode; a blocking layer interposed between the source electrode and the drain electrode and the active layer; a first insulation layer formed on the substrate to cover the active layer; a gate electrode formed on the first insulation layer in correspondence to the active layer; a capacitor top electrode formed on a same layer as the gate electrode in correspondence to the capacitor bottom electrode; and a second insulation layer formed on the first insulation layer to cover the gate electrode and the capacitor top electrode is provided.