Abstract: A bidirectional communications interface is provided that connects a transmitter and a receiver, or a transceiver, to a transmission line. Under an embodiment, the bidirectional interface generates positive and negative polarity data signals using two separate differential amplifiers that receive differential signal pairs from each side of a differential link to the transmission line and the transmitter. The bidirectional interface controls common mode rejection in each of the separate differential amplifiers using bias signals generated in response to an output common mode feedback voltage from each of the differential amplifiers. An output amplifier combines the positive and negative polarity data signals to form single-ended output logic signals. The output logic signals represent data received on the transmission line, and are provided to the receiver.

Abstract: A red phosphor includes yttrium (Y), gadolinium (Gd), an alkaline-earth metal element, and europium (Eu). A plasma display panel (PDP) includes the red phosphor.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: An organic light emitting display apparatus and a method of fabricating the same are provided. The organic light emitting display apparatus includes a pixel unit on which an organic light emitting device is formed, a thin film transistor (TFT) electrically connected to the pixel unit and a data line and a scan line electrically connected to the TFT and disposed crossing each other on a substrate. The data line and the scan line are formed in one layer. A bridge that allows one of the data line and the scan line to bypass the other is on an intersection of the data line and the scan line.

Abstract: The disclosed liquid crystal display device includes a display panel for displaying a picture thereon, a plurality of gate drive ICs for forwarding scan pulses for driving gate lines on the display panel, a plurality of upper data drive ICs for supplying pixel voltages to data lines on one side of the display panel respectively, a plurality of lower data drive ICs for supplying the pixel voltages to the data lines on the other side of the display panel respectively, a first timing controller for generating and supplying an upper data control signal to the upper data drive ICs for controlling operation of the upper data drive ICs, and a second timing controller for generating and supplying a lower data control signal to the lower data drive ICs for controlling operation of the lower data drive ICs.

Abstract: An organic light emitting display and a method of manufacturing the same are disclosed. In one embodiment, the display includes a gate electrode formed over a substrate and an active layer electrically insulated from the gate electrode, wherein the gate electrode is closer to the substrate than the active layer. The display further includes i) a first gate insulating layer and a second gate insulating layer formed between the gate electrode and active layer so as to electrically insulate the active layer from the gate electrode and ii) source and drain electrodes each contacting the active layer.

Abstract: A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

Abstract: Provided is a small mobile robot which moves back and forth and left and right while keeping its posture by two main wheels. The small mobile robot includes built-in auxiliary wheels to overcome topographical elevation differences. The auxiliary wheels of the small mobile robot are attached to a servomotor. The servomotor is driven by remote control, and the auxiliary wheel can be moved to the position required for operation. When the robot is in a normal state, the auxiliary wheels are retracted in the robot. When the robot meets a stepped topography, the auxiliary wheels are lowered out to contact a ground to support the main wheels going over the stepped topography. The small mobile robot includes a sensor for sensing obstacles and a control module to make a detour around obstacles while moving to a target point.

Abstract: An organic light emitting display device and a method of manufacturing the device are disclosed. The method includes forming a layer over an oxide semiconductor layer to protect the oxide semiconductor layer from damage as further layers are formed and etched.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines.

Abstract: In some embodiments, a chip includes transmitters to transmit differential signals on conductors; and current mode circuitry to selectively modulate a common mode voltage of the differential signals to communicate data. In other embodiments, a system includes a first chip to transmit first and second differential signals on conductors, and a second chip. The second chip includes receivers to receive the first and second differential signals from the conductors and provide received signals representative thereof, and current mode circuitry to selectively modulate a common mode voltage of either the first or second differential signals to communicate data and wherein the first chip includes common mode detection circuitry to detect changes in the common mode voltage. Other embodiments are described and claimed.

Abstract: A smart card is foamed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the light-sensing cells, and a reset control circuit generating a reset signal in response to the detection signal, the reset signal operating to reset the smart card.

Abstract: A camera module and a method of manufacturing the camera module are provided. The camera module includes a substrate having an opening through which light passes, a circuit pattern for transmitting an electrical signal, and first and second terminals connected to the circuit pattern; an image sensor combined with the substrate so as to receive the light through the opening, and electrically connected to the first terminals; a lead frame disposed around the image sensor and electrically connected to the second terminals of the substrate; a housing combined on a surface of the substrate opposite to another surface on which the image sensor and the lead frame are combined; and a lens disposed in the housing.

Abstract: An output amplifier is provided for use in a bidirectional communications interface, for example, connecting a transmitter and a receiver to a transmission line. The output amplifier includes a differential amplifier pair connected to output circuitry. The differential amplifier pair receives differential data signal pairs from each of a transmission line and a transmitter. The output circuitry receives signals from the differential amplifier pair and, in response, forms single-ended output logic signals. The output amplifier suppresses electronic input noise throughput using an asymmetric transfer characteristic that offsets output signal logic levels with respect to input noise signal levels. The asymmetric transfer characteristic is produced by skewing a transfer characteristic of the differential amplifier pair using an asymmetrical transistor configuration at an output side of the differential amplifier pair.

Abstract: The present invention relates to a method for increasing the efficiency of offspring production in producing animals belonging to the family Canidae (canines) by somatic cell nuclear transfer. More specifically, relates to a method for increasing the efficiency of production of cloned canines by a method for cloning canines comprising enucleating the oocyte of a canine to prepare an enucleated oocyte, fusing a nuclear donor cell with the enucleated oocyte to prepare a nuclear transfer embryo and transferring the nuclear transfer embryo into the oviduct of a surrogate mother, wherein the nuclear donor cell is cultured in a medium containing a specific cell cycle synchronization-inducing substance such as roscovitine in the preparation thereof.