Abstract: An output amplifier is provided for use in a bidirectional communications interface, for example, connecting a transmitter and a receiver to a transmission line. The output amplifier includes a differential amplifier pair connected to output circuitry. The differential amplifier pair receives differential data signal pairs from each of a transmission line and a transmitter. The output circuitry receives signals from the differential amplifier pair and, in response, forms single-ended output logic signals. The output amplifier suppresses electronic input noise throughput using an asymmetric transfer characteristic that offsets output signal logic levels with respect to input noise signal levels. The asymmetric transfer characteristic is produced by skewing a transfer characteristic of the differential amplifier pair using an asymmetrical transistor configuration at an output side of the differential amplifier pair.

Abstract: Provided are a method of manufacturing a plastic substrate having a TFT, a substrate manufactured thereby, a method of manufacturing a flat panel display device, and a flat display device manufactured thereby, which can be used for a flexible flat display device. The method includes: preparing a film in which a plurality of conductive patterns are included; bonding the film to a substrate; forming the TFT in a manner such that it is electrically connected to the conductive pattern on the film; and forming an insulating layer covering the TFT on the film.

Abstract: A memory device having a plurality of memory cells employs a method to detect a light attack on the memory device. The method utilizes at least one memory cell to detect a light attack when the memory cell is in an inactive state, and outputs a signal indicating whether a light attack is detected. In one case, the method includes turning off all of the memory cells of memory blocks of the memory device that are not currently being accessed for a read/write operation; sensing a leakage current of at least one of the memory cells of the memory blocks that are not currently being accessed for a read/write operation; and detecting a light attack on the memory device when a leakage current of the one of the memory cells of the memory blocks that are not currently being accessed for a read/write operation is greater than a threshold.

Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

Abstract: Provided is a method for producing a cloned dog by enucleating an oocyte of a dog to produce an enucleated oocyte, transferring a somatic cell of the dog into the enucleated oocyte, carrying out electrofusion under optimized conditions to produce a nuclear transfer embryo, and transferring the nuclear transfer embryo into its surrogate mother. The method has the effect of producing a cloned dog with high efficiency, and thus can contribute to the development of studies in veterinary medicine, anthropology and medical science, such as the propagation of superior species, xenotransplantation and diseased animal models. In addition, the present invention has the effect of exactly researching production properties of the cloned dog by producing a female cloned dog for the first time, rather than the conventional male cloned dog.

Abstract: An output amplifier is provided for use in a bidirectional communications interface, for example, connecting a transmitter and a receiver to a transmission line. The output amplifier includes a differential amplifier pair connected to output circuitry. The differential amplifier pair receives differential data signal pairs from each of a transmission line and a transmitter. The output circuitry receives signals from the differential amplifier pair and, in response, forms single-ended output logic signals. The output amplifier suppresses electronic input noise throughput using an asymmetric transfer characteristic that offsets output signal logic levels with respect to input noise signal levels. The asymmetric transfer characteristic is produced by skewing a transfer characteristic of the differential amplifier pair using an asymmetrical transistor configuration at an output side of the differential amplifier pair.

Abstract: In some embodiments, a chip includes transmitters to transmit differential signals on conductors; and current mode circuitry to selectively modulate a common mode voltage of the differential signals to communicate data. In other embodiments, a system includes a first chip to transmit first and second differential signals on conductors, and a second chip. The second chip includes receivers to receive the first and second differential signals from the conductors and provide received signals representative thereof, and current mode circuitry to selectively modulate a common mode voltage of either the first or second differential signals to communicate data and wherein the first chip includes common mode detection circuitry to detect changes in the common mode voltage. Other embodiments are described and claimed.

Abstract: Provided are a memory controller that selectively changes a frequency of a memory clock signal, a smart card including the memory controller, and a method of controlling a read operation of a memory. The memory controller includes a central processing unit (CPU), a memory interface, and a frequency change controller. The CPU outputs a read command signal in response to a data read request signal and outputs a write command signal in response to a data write request signal. The memory interface outputs a plurality of control signals in response to one of the read command signal and the write command signal, generates a memory clock signal based on a system clock signal, and changes a frequency of the memory clock signal in response to a frequency change control signal. The frequency change controller outputs the frequency change control signal in response to the plurality of control signals and the memory clock signal.

Abstract: A smart card is formed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the light-sensing cells, and a reset control circuit generating a reset signal in response to the detection signal, the reset signal operating to reset the smart card.

Abstract: A smart card includes a plurality of function blocks, and a laser attack detector configured to detect an external laser attack on at least one of the plurality of function blocks. The laser attack detector may include a plurality of chain blocks connected in a chain configuration, and each of the chain blocks is configured to change the level of a detection value stored therein in response to an external laser attack.

Abstract: An apparatus for improving write/read endurance of non-volatile memory includes a non-volatile memory area including a plurality of non-volatile memory cells to store data, and an endurance improving circuit detecting a degradation characteristic of the non-volatile memory cells upon the integrated circuit card being reset and initialized. The apparatus increases at least one of a write voltage used to write first data to the non-volatile memory cells and a read voltage used to read second data from the non-volatile memory cells based on a detection result. A method for improving write/read endurance of non-volatile memory includes monitoring the characteristic of non-volatile memory cells upon an integrated circuit card being reset and initialized, and increasing at least one among a write voltage and a read voltage which are applied to the non-volatile memory cells based on a monitoring result.

Abstract: An apparatus for improving write/read endurance of non-volatile memory includes a non-volatile memory area including a plurality of non-volatile memory cells to store data, and an endurance improving circuit detecting a degradation characteristic of the non-volatile memory cells upon the integrated circuit card being reset and initialized. The apparatus increases at least one of a write voltage used to write first data to the non-volatile memory cells and a read voltage used to read second data from the non-volatile memory cells based on a detection result. A method for improving write/read endurance of non-volatile memory includes monitoring the characteristic of non-volatile memory cells upon an integrated circuit card being reset and initialized, and increasing at least one among a write voltage and a read voltage which are applied to the non-volatile memory cells based on a monitoring result.

Abstract: A method of aligning a substrate includes forming a first alignment hole in the substrate, preparing a mask with a second alignment hole narrower than the first alignment hole, modifying a surface reflectance around either the first alignment hole or the second alignment hole to form a treatment region, positioning the mask below the substrate, such that the first and second alignment holes overlap, and operating a sensor unit above the first alignment hole to examine alignment of the first and second alignment holes.

Abstract: A communication system including a transmitter, a receiver, and a TMDS-like link, in which video data and auxiliary data are transmitted from the transmitter to the receiver, or in which video data are transmitted over the link from the transmitter to the receiver and auxiliary data are transmitted from the receiver to the transmitter (or from the transmitter to the receiver and also from receiver to the transmitter), a transmitter or receiver for use in such a system, and methods for sending auxiliary data and video data over such a link, synchronizing such auxiliary data with such video data, and generating clocks having frequency closely matching the rate at which the auxiliary data are transmitted. Typically, the auxiliary data include one or more streams of audio data.

Abstract: This invention is about extracting two signals from the signal in which more than two frequency components are mixed. In detail, this is about extracting low or high frequency component by distinguishing signal distortion using slope tracing wave. This invention applies two slope tracing wave to an arbitrary signal to track signal distortion and extract and remove low frequency component such as the variation of electrocardiogram signal baseline or easily extract or remove 60 Hz interference wave easily introduced to electrocardiogram. In addition, this allows easy detection of a specific waveform such as P wave and T wave from the electrocardiogram diagram by using the difference between the arbitrary signal and two slope tracing wave.

Abstract: A method is disclosed for relaying data between a Base Station (BS) and a Mobile Station (MS) through a relay station in a cellular network. In the data relay method, the relay station receives data from the BS and the MS, performs network coding on first data received from the BS and second data received from the MS using a predefined operator, generates a packet with the network-coded data, and transmits the packet to the BS and the MS through one wireless channel. Identification information indicating the network coding, identification information of the MS, sizes of the first and second data, and sequence numbers of the first and second data are recorded in a header of the packet.

Abstract: A semiconductor device that initializes memory cells of an activated wordline group is provided. The device includes: a control signal generation circuit, which generates first and second control signals based on an activated setting signal and an initial data value during an initial value setting operation; a first power supply circuit, which supplies power to bitlines in response to the first control signal; a second power supply circuit, which supplies power to complementary bitlines in response to the second control signal; a plurality of wordlines connected to respective memory cells; and a row decoder, which selects a group of wordlines from among the plurality of wordlines based on the setting signal and a selection address and simultaneously activates the selected group of wordlines.

Abstract: Additional information on the phase of an external clock signal is obtained by using clock signals to determine if a phase difference between an external clock signal and a first internal sampling clock signal is less than a pre-selected value. If the system determines that the phase difference is less than a pre-selected value, one embodiment samples the incoming data with a second internal sampling clock signal, having a selected phase relationship to the first internal sampling clock signal, such as ½ a clock period out of phase. By maintaining sufficient phase difference between the active edge of the external clock and the active edge of the internal sampling clock, the embodiment provides a sufficient setup/hold margin to avoid a metastability or other problem in a subsystem receiving data across an asynchronous boundary.

Abstract: A battery powered computing device has a channel configured as a single direct current balanced differential channel. A signal transmitter is connected to the channel. The signal transmitter is configured to apply clock edge modulated signals to the channel, where the clock edge modulated signals include direct current balancing control signals. A signal receiver is connected to the channel. The signal receiver is configured to recover the direct current balancing control signals.

Abstract: An apparatus for improving write/read endurance of non-volatile memory includes a non-volatile memory area including a plurality of non-volatile memory cells to store data, and an endurance improving circuit detecting a degradation characteristic of the non-volatile memory cells upon the integrated circuit card being reset and initialized. The apparatus increases at least one of a write voltage used to write first data to the non-volatile memory cells and a read voltage used to read second data from the non-volatile memory cells based on a detection result. A method for improving write/read endurance of non-volatile memory includes monitoring the characteristic of non-volatile memory cells upon an integrated circuit card being reset and initialized, and increasing at least one among a write voltage and a read voltage which are applied to the non-volatile memory cells based on a monitoring result.