Abstract: An organic light emitting display device includes a buffer layer on a substrate, the buffer layer including nano-particles, a pixel electrode on the buffer layer, an opposite electrode on the pixel electrode and facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: An organic light emitting display device and a method of manufacturing the device are disclosed. The method includes forming a layer over an oxide semiconductor layer to protect the oxide semiconductor layer from damage as further layers are formed and etched.

Abstract: A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

Abstract: An organic light emitting display apparatus and a method of fabricating the same are provided. The organic light emitting display apparatus includes a pixel unit on which an organic light emitting device is formed, a thin film transistor (TFT) electrically connected to the pixel unit and a data line and a scan line electrically connected to the TFT and disposed crossing each other on a substrate. The data line and the scan line are formed in one layer. A bridge that allows one of the data line and the scan line to bypass the other is on an intersection of the data line and the scan line.

Abstract: Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.

Abstract: A thin film transistor using an oxide semiconductor as an active layer, and its method of manufacture. The thin film transistor includes: a substrate; an active layer formed of an oxide semiconductor; a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the oxide semiconductor; a gate electrode formed on the gate insulating layer; an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer; and source and drain electrodes connected to the active layer through the contact holes. Since the source and drain electrodes are not overlapped with the gate electrode, parasitic capacitance between the source and drain electrodes and the gate electrode is minimized. Since the gate insulating layer is formed of dielectric having a high etching selectivity with respect to oxide semiconductor, the active layer is not deteriorated.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: A smart card is foamed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the light-sensing cells, and a reset control circuit generating a reset signal in response to the detection signal, the reset signal operating to reset the smart card.

Abstract: Embodiments of the invention are generally directed to a low power standby mode control circuit. An embodiment of an apparatus includes a processor, an interface for a connection with a second apparatus, and an operational circuit, wherein the processor is to disable one or more power connections to the operational circuit in a standby mode. The apparatus further includes a standby mode control circuit, the standby control circuit to operate using a standby power source, wherein the standby mode control circuit is to detect a stimulus signal from the second apparatus and in response to the stimulus signal the standby control circuit is to signal the processor, the processor to enable the one or more power connections of the operational circuit.

Abstract: An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: The liquid crystal display device includes a display panel for displaying a picture thereon, first to (n)th upper data drive ICs for supplying pixel voltages to one side of each data line in the display panel, first to (n)th bottom data drive ICs for supplying pixel voltages to the other side of each data line, a first timing controller for generating an upper data control signal and for controlling operation of the upper data drive ICs, and a second timing controller for generating a bottom data control signal and for controlling operation of the bottom data drive ICs wherein at least one of the first and second timing controllers analyzes the picture data applied thereto and controls the polarities of the pixel voltages to be forwarded from the upper data drive ICs and the bottom data drive ICs with reference to the result of the analysis.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: Provided is a small mobile robot which moves back and forth and left and right while keeping its posture by two main wheels. The small mobile robot includes built-in auxiliary wheels to overcome topographical elevation differences. The auxiliary wheels of the small mobile robot are attached to a servomotor. The servomotor is driven by remote control, and the auxiliary wheel can be moved to the position required for operation. When the robot is in a normal state, the auxiliary wheels are retracted in the robot. When the robot meets a stepped topography, the auxiliary wheels are lowered out to contact a ground to support the main wheels going over the stepped topography. The small mobile robot includes a sensor for sensing obstacles and a control module to make a detour around obstacles while moving to a target point.

Abstract: Embodiments of the invention are generally directed to testing of high-speed input-output devices. An embodiment of a high-speed input-output apparatus includes a transmitter and a receiver, and a loop-back connection from an output of the transmitter to an input of the receiver, the loop-back connection including a first connector and a second connector for transmission of differential signals. The apparatus further includes a first inductor having a first terminal and a second terminal and second inductor having a first terminal and a second terminal, the first terminal of the first inductor being connected to the first connector and the first terminal of the second inductor being connected to the second connector, the second terminal of the first inductor and the second terminal of the second inductor providing a test access port for direct current testing of the apparatus.

Abstract: A red phosphor includes yttrium (Y), gadolinium (Gd), an alkaline-earth metal element, and europium (Eu). A plasma display panel (PDP) includes the red phosphor.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: Provided is a method for producing a cloned dog by enucleating an oocyte of a dog to produce an enucleated oocyte, transferring a somatic cell of the dog into the enucleated oocyte, carrying out electrofusion under optimized conditions to produce a nuclear transfer embryo, and transferring the nuclear transfer embryo into its surrogate mother.