Abstract: A method of aligning a substrate includes forming a first alignment hole in the substrate, preparing a mask with a second alignment hole narrower than the first alignment hole, modifying a surface reflectance around either the first alignment hole or the second alignment hole to form a treatment region, positioning the mask below the substrate, such that the first and second alignment holes overlap, and operating a sensor unit above the first alignment hole to examine alignment of the first and second alignment holes.

Abstract: Disclosed herein are a cloned canine and a production method thereof. The method comprises the steps of enucleating the oocyte of a canine to prepare an enucleated recipient oocyte, conducting nuclear transfer into the enucleated oocyte using a canine somatic cell as a nuclear donor cell under optimized conditions so as to prepare a nuclear transfer embryo, and transferring the nuclear transfer embryo into the oviduct of a surrogate mother. The present invention provides a method for producing cloned canines and thus, can contribute to the development of studies in veterinary medicine, anthropology and medical science such as the propagation of superior canines, the conservation of rare or nearly extinct canines, xenotransplantation and disease animal models.

Abstract: A smart card is formed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the light-sensing cells, and a reset control circuit generating a reset signal in response to the detection signal, the reset signal operating to reset the smart card.

Abstract: A thin film transistor using an oxide semiconductor as an active layer, and its method of manufacture. The thin film transistor includes: a substrate; an active layer formed of an oxide semiconductor; a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the oxide semiconductor; a gate electrode formed on the gate insulating layer; an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer; and source and drain electrodes connected to the active layer through the contact holes. Since the source and drain electrodes are not overlapped with the gate electrode, parasitic capacitance between the source and drain electrodes and the gate electrode is minimized. Since the gate insulating layer is formed of dielectric having a high etching selectivity with respect to oxide semiconductor, the active layer is not deteriorated.

Abstract: An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

Abstract: Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

Abstract: A smart card includes a plurality of function blocks, and a laser attack detector configured to detect an external laser attack on at least one of the plurality of function blocks. The laser attack detector may include a plurality of chain blocks connected in a chain configuration, and each of the chain blocks is configured to change the level of a detection value stored therein in response to an external laser attack.

Abstract: A bidirectional communications interface is provided that connects a transmitter and a receiver, or a transceiver, to a transmission line. Under an embodiment, the bidirectional interface generates positive and negative polarity data signals using two separate differential amplifiers that receive differential signal pairs from each side of a differential link to the transmission line and the transmitter. The bidirectional interface controls common mode rejection in each of the separate differential amplifiers using bias signals generated in response to an output common mode feedback voltage from each of the differential amplifiers. An output amplifier combines the positive and negative polarity data signals to form single-ended output logic signals. The output logic signals represent data received on the transmission line, and are provided to the receiver.

Abstract: A liquid crystal display device includes a power consumption reduction portion that analyzes a histogram of first image data of an image and generates second image data and a first luminance control signal, wherein, when the image includes an irrelevance region which is substantially irrelevant to degradation of display quality, the power consumption reduction portion analyzes a histogram of first image data of other region of the image except for an excluded region, and wherein the excluded region includes at least the irrelevance region; a timing controller that is supplied with the second image data and the first luminance control signal and generates gate control signals, data control signals and a second luminance control signal; a gate driving portion that generates gate voltages using the gate control signals; a data driving portion that generates data voltages using the second image data and the data control signals; a liquid crystal panel that displays the image using the gate voltages and the data v

Abstract: A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: In some embodiments, a chip includes transmitters to transmit differential signals on conductors; and current mode circuitry to selectively modulate a common mode voltage of the differential signals to communicate data. In other embodiments, a system includes a first chip to transmit first and second differential signals on conductors, and a second chip. The second chip includes receivers to receive the first and second differential signals from the conductors and provide received signals representative thereof, and current mode circuitry to selectively modulate a common mode voltage of either the first or second differential signals to communicate data and wherein the first chip includes common mode detection circuitry to detect changes in the common mode voltage. Other embodiments are described and claimed.

Abstract: A battery powered computing device has a channel configured as a single direct current balanced differential channel. A signal transmitter is connected to the channel. The signal transmitter is configured to apply clock edge modulated signals to the channel, where the clock edge modulated signals include direct current balancing control signals. A signal receiver is connected to the channel. The signal receiver is configured to recover the direct current balancing control signals.

Abstract: A thin film transistor, including a transparent channel pattern, a transparent gate insulating layer in contact with the channel pattern, a passivation film pattern disposed on the channel pattern, a source/drain coupled to the channel pattern through a via hole in the passivation film pattern, and a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).

Abstract: A bidirectional communications interface is provided that connects a transmitter and a receiver, or a transceiver, to a transmission line. Under an embodiment, the bidirectional interface generates positive and negative polarity data signals using two separate differential amplifiers that receive differential signal pairs from each side of a differential link to the transmission line and the transmitter. The bidirectional interface controls common mode rejection in each of the separate differential amplifiers using bias signals generated in response to an output common mode feedback voltage from each of the differential amplifiers. An output amplifier combines the positive and negative polarity data signals to form single-ended output logic signals. The output logic signals represent data received on the transmission line, and are provided to the receiver.

Abstract: In some embodiments, a chip includes transmitters to transmit differential signals on conductors; and current mode circuitry to selectively modulate a common mode voltage of the differential signals to communicate data. In other embodiments, a system includes a first chip to transmit first and second differential signals on conductors, and a second chip. The second chip includes receivers to receive the first and second differential signals from the conductors and provide received signals representative thereof, and current mode circuitry to selectively modulate a common mode voltage of either the first or second differential signals to communicate data and wherein the first chip includes common mode detection circuitry to detect changes in the common mode voltage. Other embodiments are described and claimed.

Abstract: An apparatus for improving write/read endurance of non-volatile memory includes a non-volatile memory area including a plurality of non-volatile memory cells to store data, and an endurance improving circuit detecting a degradation characteristic of the non-volatile memory cells upon the integrated circuit card being reset and initialized. The apparatus increases at least one of a write voltage used to write first data to the non-volatile memory cells and a read voltage used to read second data from the non-volatile memory cells based on a detection result. A method for improving write/read endurance of non-volatile memory includes monitoring the characteristic of non-volatile memory cells upon an integrated circuit card being reset and initialized, and increasing at least one among a write voltage and a read voltage which are applied to the non-volatile memory cells based on a monitoring result.

Abstract: A communication system including a transmitter, a receiver, and a TMDS-like link, in which video data and auxiliary data (typically including timing data associated with other auxiliary data) are transmitted from the transmitter to the receiver, or in which video data are transmitted over the link from the transmitter to the receiver, and auxiliary data (typically including timing data associated with other auxiliary data) are transmitted from the receiver to the transmitter. In typical embodiments the auxiliary data include one or more streams of audio data.