Abstract: Corrosion-resistant coated articles and a thermal chemical vapor deposition coating processes are disclosed. The article includes a metallic material having a first composition including a first iron concentration and a first chromium concentration, the first iron concentration being greater than the first chromium concentration, a surface of the metallic material having a second composition including a second iron concentration and a second chromium concentration, the second chromium concentration being less than the first chromium concentration, an oxide layer on the surface of the metallic material having a third composition including an iron oxide concentration and a chromium oxide concentration, the chromium oxide concentration being greater than the iron oxide concentration and being devoid of precipitates, and a thermal chemical vapor deposition coating on the oxide layer.

Abstract: Fluid contact process, coated article, and coating processes are disclosed. The fluid contact process includes flowing a corrosive fluid to contact a coated article. The coated article includes an aluminum-containing substrate, a first region on the aluminum-containing substrate, the first region comprising carbon and silicon, a second region distal from the aluminum-containing substrate in comparison to the first region, the second region having oxygen at a greater concentration, by weight, than the first region, a third region distal from the first region in comparison to the second region, the third region comprising amorphous silicon. The coating process includes positioning the aluminum-containing substrate within an enclosed chamber, then, thermally decomposing dimethyl silane-and-silane-containing mixture within the enclosed chamber, then thermally oxidizing, and then, thermally decomposing silane.

Abstract: Fluid contact process, coated article, and coating processes are disclosed. The fluid contact process includes flowing a corrosive fluid to contact a coated article. The coated article includes an aluminum-containing substrate, a first region on the aluminum-containing substrate, the first region comprising carbon and silicon, a second region distal from the aluminum-containing substrate in comparison to the first region, the second region having oxygen at a greater concentration, by weight, than the first region, a third region distal from the first region in comparison to the second region, the third region comprising amorphous silicon. The coating process includes positioning the aluminum-containing substrate within an enclosed chamber, then, thermally decomposing dimethyl silane-and-silane-containing mixture within the enclosed chamber, then thermally oxidizing, and then, thermally decomposing silane.

Abstract: A dynamic random access memory applied to an embedded display port includes a memory core unit, a peripheral circuit unit, and an input/output unit. The memory core unit is used for operating in a first predetermined voltage. The peripheral circuit unit is electrically connected to the memory core unit for operating in a second predetermined voltage, where the second predetermined voltage is lower than 1.1V. The input/output unit is electrically connected to the memory core unit and the peripheral circuit unit for operating in a third predetermined voltage, where the third predetermined voltage is lower than 1.1V.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150° C.

Abstract: A method of manufacturing an integrated circuit includes generating a layout of a first and a second cell, adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first pair of conductive patterns on the first set of routing tracks, placing a second pair of conductive patterns on the second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and forming a second set of conductive structures based on the second pair of conductive patterns. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch.

Abstract: A dynamic random access memory applied to an embedded display port includes a memory core unit, a peripheral circuit unit, and an input/output unit. The memory core unit is used for operating in a first predetermined voltage. The peripheral circuit unit is electrically connected to the memory core unit for operating in a second predetermined voltage, where the second predetermined voltage is lower than 1.1V. The input/output unit is electrically connected to the memory core unit and the peripheral circuit unit for operating in a third predetermined voltage, where the third predetermined voltage is lower than 1.1V.

Abstract: LC techniques are disclosed. The LC technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150 degree Celsius, pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone.

Abstract: Antibodies and antigen-binding fragments that bind to TIGIT are disclosed. The disclosure further relates to methods and compositions for use in treating an immune-related disease (e.g., a cancer or an infection or infectious disease) by administering a composition disclosed herein.

Abstract: Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

Abstract: Disclosed is a ship identity recognition method based on the fusion of AIS data and video data, comprising: collecting a ship sample to train a ship target classifier; performing, using the ship target classifier, ship target detection on a video frame collected by a gimbal camera; performing a comparison with a recognized ship library to filter a recognized ship; acquiring AIS data and filtering same across time and spatial scales; predicting the current position of an AIS target using a linear extrapolation method and converting the current position to an image coordinate system; performing position matching between a target to be matched and the converted AIS target; and performing feature extraction on the successfully matched target and storing the extracted feature, together with ship identity information, into the recognized ship library.

Abstract: A method of manufacturing an integrated circuit includes identifying a first cell of a layout, placing a first pair of conductive patterns on a first set of routing tracks, placing a second pair of conductive patterns on a second set of routing tracks, and forming, by a first mask, a first set of conductive structures based on the first pair or second pair of conductive patterns. The first cell abuts a second cell. The first cell has a first set of routing tracks. The second cell has a second set of routing tracks. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. A top and bottom boundary of the first cell overlaps a pair of the first set of routing tracks. A top and bottom boundary of the second cell overlaps a pair of the second set of routing tracks.

Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150° C., pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one or both of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone, and combinations thereof.

Abstract: Provided are methods for treating a subject having or at risk of developing cancer by administering a compound that preserves p53. Also disclosed are methods for protecting renewable tissues by administering a compound that stabilizes EZH2.

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

Abstract: Methods and compositions are provided for inhibiting, preventing, ameliorating and/or reducing damage to DNA in non-cancerous cells in a subject undergoing chemotherapeutic treatment and/or radiation treatment of cancer cells in the subject, comprising administering to the subject one or more compounds of arsenic in a therapeutically effective amount prior to chemotherapeutic treatment and/or radiation treatment.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: A resin comprises at least one compound selected from one of the following formulas.

Abstract: A Sigma-Delta (?-?) analog-to-digital converter (ADC) and operation method thereof are provided. The ?-? ADC includes a ?-? modulator, a dynamic element matching (DEM) circuit and a control circuit. An input terminal of the ?-? modulator is configured to receive an analog signal. The ?-? modulator is configured to convert the analog signal into a digital signal based on a feedback signal. The DEM circuit is coupled to the ?-? modulator to receive the digital signal. The DEM circuit is configured to perform a DEM algorithm on the digital signal to generate a feedback signal, and provide the feedback signal to the ?-? modulator. The control circuit listens to the digital signal to detect a mute period. The control circuit disables the DEM circuit during the mute period to suspend a progress of the DEM algorithm.