Abstract: Various methods and systems are provided for forming a flexible circuit. In one example, a method includes forming a flexible circuit comprising a plurality of contact pads arranged into a plurality of rows, each contact pad of a given row electrically coupled to one another via electrical traces and each contact pad including a via, electroplating the flexible circuit, including electroplating each via, with at least a first material, and upon confirming connectivity of each via, cutting at least some of the electrical traces at least partially.

Abstract: Coated articles are disclosed. One embodiment of a coated article includes a substrate capable of being subjected to corrosion and a deposited coating on the substrate. The deposited coating has silicon with the substrate resisting corrosion with the deposited coating on the substrate when exposed to 15% NaClO by a rate of at least 5% greater than the corrosion rate of a coating applied with the same process but without introducing the deposition gas at the sub-decomposition temperature and/or the substrate with the deposited coating having a 15% NaClO corrosion rate of between 0 and 3 mils per year.

Abstract: A method of designing a layout includes identifying a cell having a cell height being a non-integral multiple of a minimum pitch, generating, using a processor, possibilities of an ordered arrangement of a plurality of virtual grid lines parallel to the top boundary and the bottom boundary, and placing at least two conductive patterns on the plurality of virtual grid lines. The cell height is defined by a top boundary and a bottom boundary, and the minimum pitch is based on a manufacturing process. The plurality of virtual grid lines are separated from each other by a plurality of spacings, and the top boundary overlaps a first virtual grid line of the plurality of virtual grid lines and the bottom boundary overlaps a second virtual grid line of the plurality of virtual grid lines. At least one spacing is different from another spacing of the plurality of spacings.

Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150° C., pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one or both of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone, and combinations thereof.

Abstract: A wireless access point system includes a wireless access point (WAP) apparatus, a location-setting module, and a portable electronic device. The location-setting module stores a location list recording a location and an optimum direction corresponding to the location. The portable electronic device has a detection mode and a connection mode. In the detection mode, the portable electronic device controls the WAP apparatus to radiate a wireless signal and change the radiation direction within a specified direction range. The portable electronic device analyzes the wireless signal to obtain the optimum direction having an optimum signal receiving strength, so as to update the location list with the optimum direction and the location corresponding to the optimum direction. In the connection mode, the portable electronic device loads the optimum direction corresponding to the location and controls the radiation direction to be adjusted as the loaded optimum direction.

Abstract: A method for testing a semiconductor die is provided. The method includes the following steps: charging a die pad of the semiconductor die to a precharge level; stopping charging the die pad to detect a period of time required for a voltage level of the die pad to change from the precharge level to a reference level, and accordingly generating a detection result; and determining a leakage current of the die pad according to the detection result.

Abstract: The present invention relates to a method for producing multivalent Fab fragments. In particular, the invention relates to a method for the generation of trimeric Fab fragments by co-expression of a gene construct comprising a heavy chain portion of a Fab fragment and an in-frame fused collagen-like peptide, and a gene construct consisting of a light chain portion of an IgG in mammalian cells. Uses of molecules generated using the method of the invention are also described.

Abstract: Methods and compositions are provided for inhibiting, preventing, ameliorating and/or reducing damage to DNA in non-cancerous cells in a subject undergoing chemotherapeutic treatment and/or radiation treatment of cancer cells in the subject, comprising administering to the subject one or more compounds of arsenic in a therapeutically effective amount prior to chemotherapeutic treatment and/or radiation treatment.

Abstract: Thermal chemical vapor deposition processes and coated articles are disclosed. The coated article includes a surface having a surface impurity and a coating on the surface formed by thermally reacting a gas. In comparison to a comparable coating without the surface impurity, the coating on the surface has substantially the same level of adhesion, corrosion resistance over 24 hours in 6M HCl, corrosion resistance over 72 hours in NaClO, and electrochemical impedance spectroscopy results. Additionally or alternatively, the surface impurity has properties that reduce or eliminate adhesion of a comparative coating produced by decomposition of silane on a comparative surface following exposure of the surface to a temperature.

Abstract: A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.

Abstract: Coated articles are disclosed. One embodiment of a coated article includes a substrate capable of being subjected to corrosion and a deposited coating on the substrate. The deposited coating has silicon with the substrate resisting corrosion with the deposited coating on the substrate when exposed to 15% NaClO by a rate of at least 5% greater than the corrosion rate of a coating applied with the same process but without introducing the deposition gas at the sub-decomposition temperature and/or the substrate with the deposited coating having a 15% NaClO corrosion rate of between 0 and 3 mils per year.

Abstract: A wireless access point system includes a wireless access point (WAP) apparatus, a location-setting module, and a portable electronic device. The location-setting module stores a location list recording a location and an optimum direction corresponding to the location. The portable electronic device has a detection mode and a connection mode. In the detection mode, the portable electronic device controls the WAP apparatus to radiate a wireless signal and change the radiation direction within a specified direction range. The portable electronic device analyzes the wireless signal to obtain the optimum direction having an optimum signal receiving strength, so as to update the location list with the optimum direction and the location corresponding to the optimum direction. In the connection mode, the portable electronic device loads the optimum direction corresponding to the location and controls the radiation direction to be adjusted as the loaded optimum direction.

Abstract: Corrosion-resistant coated articles and a thermal chemical vapor deposition coating processes are disclosed. The article includes a metallic material having a first composition including a first iron concentration and a first chromium concentration, the first iron concentration being greater than the first chromium concentration, a surface of the metallic material having a second composition including a second iron concentration and a second chromium concentration, the second chromium concentration being less than the first chromium concentration, an oxide layer on the surface of the metallic material having a third composition including an iron oxide concentration and a chromium oxide concentration, the chromium oxide concentration being greater than the iron oxide concentration and being devoid of precipitates, and a thermal chemical vapor deposition coating on the oxide layer.

Abstract: A dynamic random access memory applied to an embedded display port includes a memory core unit, a peripheral circuit unit, and an input/output unit. The memory core unit is used for operating in a first predetermined voltage. The peripheral circuit unit is electrically connected to the memory core unit for operating in a second predetermined voltage, where the second predetermined voltage is lower than 1.1V. The input/output unit is electrically connected to the memory core unit and the peripheral circuit unit for operating in a third predetermined voltage, where the third predetermined voltage is lower than 1.1V.

Abstract: A semiconductor device includes a bulk substrate of a first conductivity type, a first semiconductor on insulator (SOI) block in the bulk substrate, a first well of the first conductivity type in the first SOI block, a second well of a second conductivity type in the first SOI block, a first guard ring of the first conductivity type in the first SOI block around at least a portion of a periphery of the first SOI block, and a second guard ring of the second conductivity type in the first SOI block around at least a portion of the periphery of the first SOI block. The first conductivity type is different than the second conductivity type.

Abstract: A collagen scaffold domain, including a collagenous or collagen-like domain, which directs self-trimerization is provided. The collagen scaffold domain can be fused to one or more heterologous domains, such as an antibody domain. Methods for generating and using the scaffold domains and fusion proteins are also provided.

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

Abstract: An apparatus and a method for evaluating film adhesion are disclosed. The film is disposed on a first substrate, a side of the first substrate provided with the film is attached to a second substrate, and the film is divided into units. The apparatus includes an evaluation machine, which includes an upper fixing mechanism and a lower fixing mechanism disposed opposite to each other, the second substrate is detachably fixed on the upper fixing mechanism, and a side of the first substrate not provided with the film is detachably fixed on the lower fixing mechanism. The evaluation machine further includes a force application device, which is configured to apply an external force to the upper fixing mechanism and/or the lower fixing mechanism, so that the upper fixing mechanism and the lower fixing mechanism generate relative movement away from each other.

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

Abstract: A method of designing a layout includes identifying a cell having a cell height being a non-integral multiple of a minimum pitch, generating, using a processor, possibilities of an ordered arrangement of a plurality of virtual grid lines parallel to the top boundary and the bottom boundary, and placing at least two conductive patterns on the plurality of virtual grid lines. The cell height is defined by a top boundary and a bottom boundary, and the minimum pitch is based on a manufacturing process. The plurality of virtual grid lines are separated from each other by a plurality of spacings, and the top boundary overlaps a first virtual grid line of the plurality of virtual grid lines and the bottom boundary overlaps a second virtual grid line of the plurality of virtual grid lines. At least one spacing is different from another spacing of the plurality of spacings.