Abstract: A nozzle includes an expansion portion and a coupling portion having an inner end, an outer end, and an air hole extending from the inner end through the outer end. A connecting portion is connected between the expansion portion and the inner end and includes an opening intercommunicating with the air hole. The nozzle is coupled with a neck of a balloon. The expansion portion spreads the neck. The opening is received in the neck. The air hole intercommunicates with an inflation space defined in the balloon when a gas with a sufficient pressure is filled into the air hole. The air hole does not intercommunicate with the inflation space when no gas with the sufficient pressure is filled into the air hole.

Abstract: A smoke generator includes an oil tank (20) receiving an oil to be pumped by an oil pump (42) to a vaporization tube (157) where the oil vaporized into smoke after heating by a heater (159). A pre-pressurization oil supply device (72) is disposed between the vaporization tube (157) and the oil pump (42). When the pre-pressurization oil supply device (72) is in a non-supply state not intercommunicating with the vaporization tube (157), the pre-pressurization oil supply device (72) maintains its internal pressure, and the oil in the pre-pressurization oil supply device (72) is not delivered to the vaporization tube (157). When the pre-pressurization oil supply device (72) is in an oil supply state, the pre-pressurization oil supply device (72) intercommunicates with the vaporization tube (157), and the oil in the pre-pressurization oil supply device (72) is rapidly delivered to the vaporization tube (157).

Abstract: Structures for field-effect transistors and methods for fabricating a structure for field-effect transistors. A logic cell includes first and second field-effect transistors and a well defining a back gate that is arranged beneath the first and second field-effect transistors. A dielectric layer is arranged between the well and the logic cell. A plurality of deep trench isolation regions extend through the dielectric layer and are arranged to surround the first and second field-effect transistors and the well. The back gate is shared by the first and second field-effect transistors.

Abstract: Structures for field-effect transistors and methods for fabricating a structure for field-effect transistors. A logic cell includes first and second field-effect transistors and a well defining a back gate that is arranged beneath the first and second field-effect transistors. A dielectric layer is arranged between the well and the logic cell. A plurality of deep trench isolation regions extend through the dielectric layer and are arranged to surround the first and second field-effect transistors and the well. The back gate is shared by the first and second field-effect transistors.

Abstract: A device including multiple depth STI regions with sidewall profiles, and method of production thereof Embodiments include a top region having a substantially vertical sidewall profile; and a bottom region having a width greater than or equal to the top region and a sidewall profile.

Abstract: A device including multiple depth STI regions with sidewall profiles, and method of production thereof Embodiments include a top region having a substantially vertical sidewall profile; and a bottom region having a width greater than or equal to the top region and a sidewall profile.

Abstract: A method of forming a finFET SRAM and related device, are provided. Embodiments include forming a plurality of silicon fins in a substrate; and forming a gate over each of the fins, wherein all of the fins are diagonally skewed in a single direction relative to the gates, and all of the gates extend in a single direction relative to the respective fins.

Abstract: The present disclosure provides manufacturing techniques and semiconductor devices in which a contact element at the source side of a pull-down transistor in a RAM cell may connect to the back gate region in a fully depleted SOI transistor architecture. In this manner, the complexity of at least some metallization layers may be reduced, thereby providing the potential of reducing parasitic bit line capacitance. Furthermore, in some illustrative embodiments, the contact regime for connecting the back gate region to a reference potential may be omitted, thereby reducing overall floor space of respective designs.

Abstract: A method of forming a finFET SRAM and related device, are provided. Embodiments include forming a plurality of silicon fins in a substrate; and forming a gate over each of the fins, wherein all of the fins are diagonally skewed in a single direction relative to the gates, and all of the gates extend in a single direction relative to the respective fins.

Abstract: A high voltage transistor may be formed on the basis of CMOS techniques for forming sophisticated SOI devices, wherein a fully depleted channel portion may result in low on-resistance and high breakdown voltage. Thus, an LDMOS-type transistor may be formed on the basis of a fully depleted drift region, thereby providing a high degree of scalability and process compatibility with sophisticated CMOS techniques.

Abstract: An instantaneous heater (51) is mounted in a casing (20) of a smoke machine (10). The instantaneous heater (51) includes a heating rod (52), a flow guiding member (131) mounted around the heating rod (52), and an outer tube (64) mounted around the flow guiding member (131). The flow guiding member (131) includes an inner periphery (137) abutting an outer periphery (58) of the heating rod (52). A shallow, rectilinear heating passage (151) is defined in the inner periphery (137) of the flow guiding member (131) to permit a small amount of oil to pass therethrough. The oil can be directly and completely heated and vaporized by the heating rod (52) into smoke.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor layer, forming a plurality of semiconductor fins on a surface of the semiconductor layer extending in parallel to each other along a first direction parallel to the surface of the semiconductor layer, and forming a plurality of gate electrodes comprising longitudinal portions extending parallel to the semiconductor fins along the first direction.

Abstract: The present disclosure provides a method of forming a capacitor structure and a capacitor structure. A semiconductor-on-insulator substrate is provided comprising a semiconductor layer, a buried insulating material layer and a semiconductor substrate material. A shallow trench isolation structure defining a first active region on the SOI substrate is formed, the first active region having a plurality of trenches formed therein. Within each trench, the semiconductor substrate material is exposed on inner sidewalls and a bottom face. A layer of insulating material covering the exposed semiconductor substrate material is formed, and an electrode material is deposited on the layer of insulating material in the first active region.

Abstract: An instantaneous heater (51) is mounted in a casing (20) of a smoke machine (10). The instantaneous heater (51) includes a heating rod (52), a flow guiding member (131) mounted around the heating rod (52), and an outer tube (64) mounted around the flow guiding member (131). The flow guiding member (131) includes an inner periphery (137) abutting an outer periphery (58) of the heating rod (52). A shallow, rectilinear heating passage (151) is defined in the inner periphery (137) of the flow guiding member (131) to permit a small amount of oil to pass therethrough. The oil can be directly and completely heated and vaporized by the heating rod (52) into smoke.

Abstract: The present disclosure provides a method of forming a capacitor structure and a capacitor structure. A semiconductor-on-insulator substrate is provided comprising a semiconductor layer, a buried insulating material layer and a semiconductor substrate material. A shallow trench isolation structure defining a first active region on the SOI substrate is formed, the first active region having a plurality of trenches formed therein. Within each trench, the semiconductor substrate material is exposed on inner sidewalls and a bottom face. A layer of insulating material covering the exposed semiconductor substrate material is formed, and an electrode material is deposited on the layer of insulating material in the first active region.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor layer, forming a plurality of semiconductor fins on a surface of the semiconductor layer extending in parallel to each other along a first direction parallel to the surface of the semiconductor layer, and forming a plurality of gate electrodes comprising longitudinal portions extending parallel to the semiconductor fins along the first direction.

Abstract: A semiconductor device including a semiconductor layer, a plurality of semiconductor fins formed on a surface of the semiconductor layer and a plurality of gate electrodes formed over the surface of the semiconductor layer is provided. The semiconductor fins extend in parallel to each other along a first direction parallel to the surface of the semiconductor layer and have a first height in a second direction that is perpendicular to the first direction, and the gate electrodes comprise longitudinal portions extending parallel to the semiconductor fins along the first direction and, in particular, having a second height in the second direction lower than the first height.

Abstract: A semiconductor device including a semiconductor layer, a plurality of semiconductor fins formed on a surface of the semiconductor layer and a plurality of gate electrodes formed over the surface of the semiconductor layer is provided. The semiconductor fins extend in parallel to each other along a first direction parallel to the surface of the semiconductor layer and have a first height in a second direction that is perpendicular to the first direction, and the gate electrodes comprise longitudinal portions extending parallel to the semiconductor fins along the first direction and, in particular, having a second height in the second direction lower than the first height.

Abstract: A humidifier for a respiratory apparatus includes a first cover, a second cover engaged with the first cover and a partition plate. The first cover defines an air inlet. The second cover defines a chamber configured to contain at least some amount of water. A heater is configured to heat the water to generate humidified air in the chamber. The partition plate is partly sandwiched between the first cover and the second cover. The partition plate defines an air outlet. Air input via the air inlet is humidified by being mixed with the humidified air and thereafter ejected through the air outlet. The air entering via the air inlet is divided by the partition plate into a plurality of flows having different flow velocities, thereby form a plurality of flow paths.

Abstract: An instantaneous heater for a smoke generator includes a heating rod having first and second sections. The second section is connected to a power supply system of a smoke generator. An outer tube is mounted around the heating rod. An end cap is sealing mounted to a first end of the outer tube and covers the first section of the heating rod. The outer periphery of the heating rod, the inner periphery of the outer tube, the end cap, and the connection cap together defines a heating passage intercommunicating with an outlet of the end cap. A connection cap is sealingly mounted around a second end of the outer tube. The connection cap includes a coupling hole intercommunicating with the heating passage. A guiding tube is mounted between the coupling hole of the connection cap and an oil tank of the smoke generator.