Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a memory cell overlying a substrate. A lower via underlies the memory cell. The lower via is laterally offset from the memory cell by a lateral distance. A first conductive layer is disposed vertically between the memory cell and the lower via and comprising a first material. The first conductive layer continuously extends along the lateral distance. A second conductive layer extends across an upper surface of the first conductive layer and comprises a second material different from the first material. A bottom surface of the second conductive layer is aligned with a bottom surface of the memory cell.

Abstract: A fingerprint sensing system including a plurality of micro-lenses, a sensor, a shielding structure and a controller is provided. The micro-lenses are arranged in an array. The sensor has a plurality of sensing pixels arranged in an array. The sensor, the shielding structure and the micro-lenses are sequentially arranged along an arrangement direction. The controller is electrically connected to the sensor. A pitch between the micro-lenses is greater than a pitch between the sensing pixels. The controller forms a fingerprint image according to signals of a plurality of output pixels of the sensor, wherein each of the output pixels is one of every at least four of neighboring sensing pixels. An operation method of a fingerprint sensing system is also provided.

Abstract: A liquid cooling head includes an upper casing, an impeller, a bottom casing and a skived fin cooling plate. The upper casing has an inlet and an outlet, the upper casing is fixed on the bottom casing, and the impeller is arranged between the upper casing and the skived fin cooling plate. In addition, the skived fin cooling plate is fixed on the bottom casing, and the impeller sucks the heat-dissipating liquid from the inlet and drives the heat-dissipating liquid passing through the skived fin cooling plate, upwardly passing through the impeller and then discharged from the outlet.

Abstract: In some implementations, one or more semiconductor processing tools may form a via within a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a ruthenium-based liner within the via. The one or more semiconductor processing tools may deposit, after depositing the ruthenium-based liner, a copper plug within the via.

Abstract: An optical detector (100, 200, 300) for detecting gas and suspended matter therein includes a test chamber (111, 113), at least one light source (12), a sensing object (131, 133), a test optical sensor (141) and a processor (19). The test chamber (111, 113) accommodates a gas to be analyzed. The at least one light source (12) emits an incident light that enters the test chamber (111, 113). The sensing object (131, 133) is exposed to gas in the test chamber (111, 113), receives the incident light, and reflects or transmits a portion of the incident light to form a test light. The test optical sensor (141) receives the test light and generates a detected spectral signal. The processor (19) receives the detected spectral signal and calculates a detection result according to the detected spectral signal.

Abstract: A quick-release fastener structure includes a body portion and an engaging portion. The body portion is fitted to a first object. The engaging portion is movably fitted to the body portion. The engaging portion has a head portion, a bar portion with an end connected to the head portion, and an engaging-connecting portion disposed at another end of the bar portion. The engaging-connecting portion is insertedly engaged with or separated from a second object. Therefore, the quick-release fastener structure operates by fitting the body portion to the first object and allowing the engaging portion to be engagedly connected to the second object or removed from the second object, such that the at least two objects are coupled together and separated repeatedly and quickly.

Abstract: A blocking material is selectively deposited on a bottom surface of a back end of line (BEOL) conductive structure such that a barrier layer is selectively deposited on sidewalls of the BEOL conductive structure but not the bottom surface. The blocking material is etched such that copper from a conductive structure underneath is exposed, and a ruthenium layer is deposited on the barrier layer but less ruthenium is deposited on the exposed copper. Accordingly, the barrier layer prevents diffusion of metal ions from the BEOL conductive structure and is substantially absent from the bottom surface as compared to the sidewalls in order to reduce contact resistance. Additionally, the ruthenium layer reduces surface roughness within the BEOL conductive structure and is thinner at the bottom surface as compared to the sidewalls in order to reduce contact resistance.

Abstract: A method includes forming a fin protruding from a substrate, forming a first dielectric feature adjacent to the fin over the substrate, forming a cladding layer over the fin and the first dielectric feature, and removing a portion of the cladding layer to form an opening. The opening exposes the first dielectric feature. The method further includes forming a second dielectric feature adjacent to the cladding layer, the second dielectric feature filling the opening, forming a dummy gate stack over the fin and the second dielectric feature, forming source/drain (S/D) features in the fin adjacent to the dummy gate stack, and replacing the dummy gate stack and the cladding layer with a metal gate stack. The second dielectric feature divides the metal gate stack.

Abstract: A heat dissipation base includes a fixing plate and a metal heat conduction block. The fixing plate includes a plurality of heat pipe partitions and a plurality of heat pipe fixing openings, and the heat pipe fixing openings are formed between the heat pipe partitions. The metal heat conduction block is fixed to the fixing plate, and the fixing plate further includes a plurality of supporting portions to support shear surfaces at two ends of the heat conduction block.

Abstract: A method of a relay user equipment (UE) can include receiving, at the relay UE, from a first neighbor UE, a communication request message for establishing a connection between an initiating UE and a target UE, the communication request message including first security-establishment-related information originating from the initiating UE for establishing a security association between the initiating UE and the target UE; modifying the communication request message to add second security-establishment-related information for establishing a security association between the relay UE and a second neighbor UE; and transmitting to the second neighbor UE the modified communication request message that includes the first security-establishment-related information originating from the initiating UE for establishing the security association between the initiating UE and the target UE, and the second security-establishment-related information added by the relay UE for establishing the security association between the rela

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: A touch display device includes a flexible substrate, a light emitting structure layer, and a flexible touch sensing layer. The flexible substrate has a first surface and a second surface opposite to each other. The light emitting structure layer is disposed on the first surface of the flexible substrate. The flexible touch sensing layer is disposed on the second surface of the flexible substrate.

Abstract: Various embodiments may relate to a fluid transfer system. The fluid transfer system may include a chamber containing a fluid absorbing material in contact with a device. The fluid transfer system may also include a reservoir including rows of bendable support members, the reservoir connected to the chamber for transport of a fluid from the reservoir to the fluid absorbing material. The fluid transfer system may further include a mass including rows of protrusions configured to engage with the rows of bendable support members, the mass configured to be arranged in the reservoir such that forces acting on the mass include a gravitational force on the mass, a floating force exerted by the fluid on the mass, and a contact force exerted by the rows of bendable support members on the mass.

Abstract: Some embodiments relate to a probabilistic random number generator. The probabilistic random number generator includes a memory cell comprising a magnetic tunnel junction (MTJ), and an access transistor coupled to the MTJ of the memory cell. A variable current source is coupled to the access transistor and is configured to provide a plurality of predetermined current pulse shapes, respectively, to the MTJ to generate a bit stream that includes a plurality of probabilistic random bits, respectively, from the MTJ. The predetermined current pulse shapes have different current amplitudes and/or pulse widths corresponding to different switching probabilities for the MTJ.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a shunting layer overlying a spin orbit torque (SOT) layer. A magnetic tunnel junction (MTJ) structure overlies a semiconductor substrate. The MTJ structure includes a free layer, a reference layer, and a tunnel barrier layer disposed between the free and reference layers. A bottom electrode via (BEVA) underlies the MTJ structure, where the BEVA is laterally offset from the MTJ structure by a lateral distance. The SOT layer is disposed vertically between the BEVA and the MTJ structure, where the SOT layer continuously extends along the lateral distance. The shunting layer extends across an upper surface of the SOT layer and extends across at least a portion of the lateral distance.

Abstract: A method and a system for monitoring wear of a braking frictional pad of a motor vehicle, includes stopping the motor vehicle stably on a horizontal or substantially horizontal plane; determining a current fluid level in a brake fluid reservoir; determining a volume difference (?VL) of the brake fluid in the brake fluid reservoir by comparing the determined current fluid level with a predetermined reference fluid level; when a thickness loss of a braking frictional pad equipped for a front vehicle wheel or a rear vehicle wheel is known, determining a thickness loss of a braking frictional pad assigned for the other front vehicle wheel or the other rear vehicle wheel based on the volume difference of the brake fluid in the brake fluid reservoir and a diameter of a brake piston of the respective brake device.

Abstract: A method and a system for monitoring wear of a braking frictional pad of a motor vehicle, the motor vehicle including a brake device acting on a vehicle wheel, the brake device including a braking frictional pad that is non-rotatable relative to the vehicle wheel and is linearly movable parallel to a rotational axis of the vehicle wheel; a brake piston configured to drive the braking frictional pad; and an electric parking brake or an electric mechanical brake, the electric parking brake or the electric mechanical brake having a drive motor and a piston driving part driven by the drive motor to be linearly movable, the piston driving part being configured to, when the motor vehicle is braking, drive the brake piston to contact the braking frictional pad and in turn drive the braking frictional pad to move.

Abstract: Apparatus and methods are provided for sidelink measurement configuration and report for open-loop sidelink power control. In one embodiment, the SL measurement report configuration configures a first measurement report, and wherein the reference threshold is an absolute reference threshold. In another embodiment, the reference threshold is an SL measurement result in an SL measurement report previously sent to the transmitting UE. In some embodiments, the reporting condition is the layer-3 (L3) filtered SL RSRP measurement being the offset higher or lower than the reference threshold. In yet another embodiment, the reporting condition is an explicit request of measurement report from the transmitting UE. In one embodiment, the SL measurement report includes one or more elements comprising a Boolean indicator, a delta value between the L3 filtered SL RSRP measurement and the reference threshold, and an absolute value of the L3 filtered SL RSRP measurement.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.