Abstract: A method includes forming a fin protruding from a substrate, forming a first dielectric feature adjacent to the fin over the substrate, forming a cladding layer over the fin and the first dielectric feature, and removing a portion of the cladding layer to form an opening. The opening exposes the first dielectric feature. The method further includes forming a second dielectric feature adjacent to the cladding layer, the second dielectric feature filling the opening, forming a dummy gate stack over the fin and the second dielectric feature, forming source/drain (S/D) features in the fin adjacent to the dummy gate stack, and replacing the dummy gate stack and the cladding layer with a metal gate stack. The second dielectric feature divides the metal gate stack.

Abstract: A heat dissipation base includes a fixing plate and a metal heat conduction block. The fixing plate includes a plurality of heat pipe partitions and a plurality of heat pipe fixing openings, and the heat pipe fixing openings are formed between the heat pipe partitions. The metal heat conduction block is fixed to the fixing plate, and the fixing plate further includes a plurality of supporting portions to support shear surfaces at two ends of the heat conduction block.

Abstract: A method of a relay user equipment (UE) can include receiving, at the relay UE, from a first neighbor UE, a communication request message for establishing a connection between an initiating UE and a target UE, the communication request message including first security-establishment-related information originating from the initiating UE for establishing a security association between the initiating UE and the target UE; modifying the communication request message to add second security-establishment-related information for establishing a security association between the relay UE and a second neighbor UE; and transmitting to the second neighbor UE the modified communication request message that includes the first security-establishment-related information originating from the initiating UE for establishing the security association between the initiating UE and the target UE, and the second security-establishment-related information added by the relay UE for establishing the security association between the rela

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: A touch display device includes a flexible substrate, a light emitting structure layer, and a flexible touch sensing layer. The flexible substrate has a first surface and a second surface opposite to each other. The light emitting structure layer is disposed on the first surface of the flexible substrate. The flexible touch sensing layer is disposed on the second surface of the flexible substrate.

Abstract: Various embodiments may relate to a fluid transfer system. The fluid transfer system may include a chamber containing a fluid absorbing material in contact with a device. The fluid transfer system may also include a reservoir including rows of bendable support members, the reservoir connected to the chamber for transport of a fluid from the reservoir to the fluid absorbing material. The fluid transfer system may further include a mass including rows of protrusions configured to engage with the rows of bendable support members, the mass configured to be arranged in the reservoir such that forces acting on the mass include a gravitational force on the mass, a floating force exerted by the fluid on the mass, and a contact force exerted by the rows of bendable support members on the mass.

Abstract: Some embodiments relate to a probabilistic random number generator. The probabilistic random number generator includes a memory cell comprising a magnetic tunnel junction (MTJ), and an access transistor coupled to the MTJ of the memory cell. A variable current source is coupled to the access transistor and is configured to provide a plurality of predetermined current pulse shapes, respectively, to the MTJ to generate a bit stream that includes a plurality of probabilistic random bits, respectively, from the MTJ. The predetermined current pulse shapes have different current amplitudes and/or pulse widths corresponding to different switching probabilities for the MTJ.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a shunting layer overlying a spin orbit torque (SOT) layer. A magnetic tunnel junction (MTJ) structure overlies a semiconductor substrate. The MTJ structure includes a free layer, a reference layer, and a tunnel barrier layer disposed between the free and reference layers. A bottom electrode via (BEVA) underlies the MTJ structure, where the BEVA is laterally offset from the MTJ structure by a lateral distance. The SOT layer is disposed vertically between the BEVA and the MTJ structure, where the SOT layer continuously extends along the lateral distance. The shunting layer extends across an upper surface of the SOT layer and extends across at least a portion of the lateral distance.

Abstract: A method and a system for monitoring wear of a braking frictional pad of a motor vehicle, includes stopping the motor vehicle stably on a horizontal or substantially horizontal plane; determining a current fluid level in a brake fluid reservoir; determining a volume difference (?VL) of the brake fluid in the brake fluid reservoir by comparing the determined current fluid level with a predetermined reference fluid level; when a thickness loss of a braking frictional pad equipped for a front vehicle wheel or a rear vehicle wheel is known, determining a thickness loss of a braking frictional pad assigned for the other front vehicle wheel or the other rear vehicle wheel based on the volume difference of the brake fluid in the brake fluid reservoir and a diameter of a brake piston of the respective brake device.

Abstract: A method and a system for monitoring wear of a braking frictional pad of a motor vehicle, the motor vehicle including a brake device acting on a vehicle wheel, the brake device including a braking frictional pad that is non-rotatable relative to the vehicle wheel and is linearly movable parallel to a rotational axis of the vehicle wheel; a brake piston configured to drive the braking frictional pad; and an electric parking brake or an electric mechanical brake, the electric parking brake or the electric mechanical brake having a drive motor and a piston driving part driven by the drive motor to be linearly movable, the piston driving part being configured to, when the motor vehicle is braking, drive the brake piston to contact the braking frictional pad and in turn drive the braking frictional pad to move.

Abstract: Apparatus and methods are provided for sidelink measurement configuration and report for open-loop sidelink power control. In one embodiment, the SL measurement report configuration configures a first measurement report, and wherein the reference threshold is an absolute reference threshold. In another embodiment, the reference threshold is an SL measurement result in an SL measurement report previously sent to the transmitting UE. In some embodiments, the reporting condition is the layer-3 (L3) filtered SL RSRP measurement being the offset higher or lower than the reference threshold. In yet another embodiment, the reporting condition is an explicit request of measurement report from the transmitting UE. In one embodiment, the SL measurement report includes one or more elements comprising a Boolean indicator, a delta value between the L3 filtered SL RSRP measurement and the reference threshold, and an absolute value of the L3 filtered SL RSRP measurement.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

Abstract: Disclosed are a method and an apparatus for generating patent summary information, and an electronic device and a computer readable medium. The method for generating patent summary information includes: extracting technical problem information from a target patent document; extracting solution information from the target patent document; and generating the patent summary information based on the technical problem information and the solution information.

Abstract: A semiconductor device including a semiconductor substrate and an interconnect structure is provided. The semiconductor substrate includes a transistor, wherein the transistor has a source region and a drain region. The interconnect structure is disposed over the semiconductor substrate, wherein the interconnect structure includes a plurality of interlayer dielectric layers, a first via and a memory cell. The plurality of interlayer dielectric layers are over the semiconductor substrate. The first via is embedded in at least two interlayer dielectric layers among the plurality of interlayer dielectric layers and electrically connected with the drain region of the transistor. The memory cell is disposed over the at least two interlayer dielectric layers among the plurality of interlayer dielectric layers and electrically connected with the first via.

Abstract: An automatic nut screwing device includes a positioning mold plate, a screw shaft, driving gear elements having driving gears, and transmission screwing elements having transmission screw gear units, bolt heads and bolt bodies. The transmission screw gear unit engages an upper out surface of the bolt head. The bolt head of each transmission screw element is fixed with the positioning mold plate. The shaft engaging portion engages with the transmission screw gear unit. The transmission screw gear unit engages with the driving gears such that the transmission screw gear unit is driven to rotate by the shaft engaging portion. A nut socket placing element has nut sockets when the screw shaft is axially rotated to enable the shaft engaging portion of the screw shaft to drive the transmission screw elements, thereby successively rotating elements that result in screw body being rotated to screw with the nut.

Abstract: Mechanism of relay UE discovery and relay UE selection and reselection for remote UE data transmission with a serving base station via relay UE is proposed. A method operable for relay UE selection and reselection of remote UE is provided. The UE considers additional criteria such as relay load other than purely radio signal quality (e.g., RSRP) criteria. The relay load can serve different purpose for relay UE and remote UE. The relay load can be the criteria for UE to become a relay UE or not. It can be the criteria for a remote UE to select another UE as its relay UE.

Abstract: A remanufacturing method of a drill includes providing a drill with a worn-out area. The drill comprises: a shank part; and a flute part arranged on one end of the shank part. A chisel edge is formed on the front end of the flute part, and the radius of any one of the cross section of the chisel edge is defined as a core thickness; a first blade and a second blade with tilt directions toward the shank part are formed on the two sides of the chisel edge. The first circumferential surface of the first blade and the second circumferential surface of the second blade are respectively extended and spiraled toward the shank part along a periphery of the flute part and form two helical cutting edges, a first debris-discharging groove and a second debris-discharging groove. The first blade comprises a first cutting edge. The first cutting edge and the first circumferential surface define the worn-out area.

Abstract: A system. The system includes an image display system, a display device, a camera system, one or more control devices and a control system. The display device is configured to display an image received from the image display system. The camera system is configured to capture the image displayed by the display device during a capture of a scene. The control system is communicably coupled to the image display system, the display device, the camera system and the one or more control devices. The control system comprises a processing circuit and is configured to automatically adjust settings of the image display system, the display device and the camera system. The control system is also configured to determine which of the adjustments results in the least destruction to the image, and apply the adjustment which results in the least destruction to the image.

Abstract: In some embodiments, the present disclosure relates to a memory device that includes a spin orbit torque (SOT) layer arranged over a substrate. A magnetic tunnel junction (MTJ) structure may be arranged over the SOT layer. The MTJ structure includes a free layer, a reference layer, and a diffusion barrier layer disposed between the free layer and the reference layer. A first conductive wire is arranged below the SOT layer and coupled to the SOT layer. A second conductive wire is arranged below the SOT layer and coupled to the SOT layer. A third conductive wire is arranged over the MTJ structure. The memory device further includes a first selector structure arranged between the first conductive wire and the SOT layer.