Abstract: A drug container with no need to peel a gas-barrier film or with no need to contain a desiccant, an oxygen absorbent or the like, in which the contents therein can be seen by the naked eyes. The container (10) comprises a front sheet (20) and a rear sheet (22), the front sheet (20) and the rear sheet (22) being fusion-bonded each other so as to form a space (14) therebetween, wherein the front sheet is constituted of a multilayered film having a linear-polyolefin layer as the outermost layer, wherein the rear sheet is constituted of a multilayered film having at least one selected from a group consisting of a metal foil, a vapor-deposited metal layer and a vapor-deposited inorganic layer, and wherein a transparent covering sheet (24) comprising a film having a vapor-deposited metal oxide layer is fusion-bonded to the front sheet so that the entire outer surface of at least a part of the front sheet which forms the space can be covered with the transparent covering sheet (24).

Abstract: An operational amplifier generates a power supply potential from a reference potential. An impedance adjuster adjusts an output impedance of the operational amplifier in accordance with a control signal. A charge accumulator accumulates an output charge of the operational amplifier whose impedance is adjusted by the impedance adjuster. A comparator compares an output voltage of the operational amplifier before the impedance adjustment by the impedance adjuster and the output voltage of the operational amplifier after the impedance adjustment by the impedance adjuster to each other, and the comparator further generates the control signal in accordance with a result of the comparison so as to output the generated control signal to the impedance adjuster.

Abstract: Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.

Abstract: The device comprises a floodlight unit and a receiver unit and a processing unit. The floodlight unit applies an infrared light to the surface of a work piece, and comprises a surface light source and a focusing lens. The receiver unit receives the infrared light reflected from the surface of the work piece, and comprises a receiver sensor and a filter, which passes the infrared light that has the wavelength which contaminants on the surface absorb. The processing unit evaluates the cleanliness of the surface of the work piece according to the absorbance of the infrared light reflected from the surface. And a receiving area of the reflected infrared light from the surface is set smaller than an applying area of the applied infrared light to the surface.

Abstract: In a film reforming method for reforming a film layer to be reformed by irradiating electron beams thereon, the electron beams are irradiated in a state where the film layer is cooled. Further, in a slimming amount controlling method for controlling a slimming amount of a resist film layer, the slimming amount thereof is controlled by the irradiation amount of electron beams irradiated thereon in a state where the resist film layer having a specified opening dimension is cooled. Furthermore, in a film reforming apparatus including a mounting unit for mounting thereon an object to be processed and an electron beam irradiating unit for irradiating electron beams on the object disposed on the mounting unit to thereby reform a film layer to be reformed, formed on an object, the electron beams are irradiated from the electron beam irradiating unit in a state where the film layer is cooled by a cooling unit provided in the mounting unit.

Abstract: Provided is a filter for removing a sulfur-containing-gas (1), which removes the sulfur-containing-gas by being brought into contact with the sulfur-containing-gas in a gas flow path, the filter comprising a former filter (11) disposed on an upstream side of the gas flow path, and a latter filter (12) disposed on a downstream side of the gas flow path, wherein the former filter (11) comprises a first material for removing a sulfur-containing-gas, the first material comprising a porous support, and iodine which is supported on the porous support, and is produced by catalytic pyrolysis of ammonium iodide at a thermal decomposition ratio of 80% or more by use of the porous support as a catalyst, and the latter filter (12) comprises a second material for removing a sulfur-containing-gas, the second material comprising an activated carbon fiber, and an alkali component which is supported on the activated carbon fiber.

Abstract: In a substrate nitriding method for nitriding a target substrate by allowing a nitrogen-containing plasma to act on silicon on a surface of the substrate in a processing chamber of a plasma processing apparatus, the nitridation by the nitrogen-containing plasma is performed by controlling a sheath voltage Vdc around the substrate to be less than or equal to about 3.5 eV. The sheath voltage Vdc is a potential difference Vp?Vf between a plasma potential Vp in a plasma generating region and a floating potential Vf of the substrate.

Abstract: Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.

Abstract: A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N2O atmosphere, and nitriding the silicon oxynitride film.

Abstract: A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.

Abstract: A processing method according to the present invention coats a polar liquid film or forms an inorganic film on a surface of an organic film formed on a substrate as a protective film. The processing method comprises a modifying step of curing an organic film by irradiating the organic film with electron beams by means of an electron-beam irradiation device in a rare gas atmosphere, and an applying step of applying a polar liquid to the modified surface of the organic film or a film forming step of forming an inorganic film on the organic film. The organic film is cured and affinity for the polar liquid or the inorganic film is imparted to the organic film.

Abstract: An organic material film formed on a surface of an object to be processed is cured by electron beams irradiated thereon through a hydrocarbon radical generating gas. By employing the electron beams and the hydrocarbon radical generating gas, a deterioration of a k value of the organic material film and a reduction of a chemical resistance thereof are suppressed.

Abstract: A medicine bag, which includes a bag body having a medicine storage chamber that stores a medicine in such a way that the medicine is visually confirmed through a light-transmission portion provided in at least one part of the bag body, the bag body having a weak seal portion that divides the medicine storage chamber into a plurality of division spaces, and the sealing of the weak seal portion adjacent to a specific division space being removed by increasing the internal pressure of that division space, including: a cover sheet which is peelably attached to the bag body; and a requisitely-used portion which is used in the process shortly before the medicine is administered, in which the cover sheet includes: a light-shielding portion which shields from the light the medicine stored in at least one division space by covering a predetermined part of the light-transmission portion; and a continuously-formed portion which is continuously formed in the light-shielding portion and is placed so that the requisitely-

Abstract: an operational amplifier generates a power supply potential from a reference potential. An impedance adjuster adjusts an output impedance of the operational amplifier in accordance with a control signal. A charge accumulator accumulates an output charge of the operational amplifier whose impedance is adjusted by the impedance adjuster. A comparator compares an output voltage of the operational amplifier before the impedance adjustment by the impedance adjuster and the output voltage of the operational amplifier after the impedance adjustment by the impedance adjuster to each other, and the comparator further generates the control signal in accordance with a result of the comparison so as to output the generated control signal to the impedance adjuster.

Abstract: A bag-shaped drug container comprises a bag-shaped container body made of a flexible film, and a mouth provided at one end of the container body. The mouth is provided on a side of an open end thereof with a Luer locking means to liquid-tightly connect it with a tip of a syringe, and closed by a closing means such as cap or a male Luer portion.

Abstract: In a thin film processing method and system, a film thickness is regulated by using electron beams irradiated from a plurality of electron beam tubes onto a film of varying thickness formed on an object to be processed, wherein the output powers or beam irradiation times of the electron beam tubes are individually controlled according to a distribution of the thickness. In the method and system, electric charges charged in a film of an object to be processed can be removed also.

Abstract: A multi-chamber container having chambers formed of a film of which at least an innermost layer is a cyclic polyolefin, one chamber being partitioned from another chamber by a partition wall, and the partition wall having an easily peelable seal layer which contains a low-density polyethylene and a propylene/?-olefin copolymer. The multi-chamber container enables the contents of the chambers to be mixed together.

Abstract: A fuel vapor adsorbing device (10, 60, 70, 70?, 80) for adsorbing residual fuel vapors that remain in an intake conduit (1, 2, 3, 4) of an induction system of an internal combustion engine when the internal combustion engine is stopped may include an adsorbing member (40, 40?) that is constructed to adsorb the residual fuel vapors and is disposed along an inner wall surface of the intake conduit. The adsorbing member is arranged and constructed to form a supplemental intake path (T, T?, T??) between the adsorbing member and the inner wall surface of the intake conduit, so that intake air of the engine can flow through the supplemental intake path.

Abstract: A plasma processing method for forming a silicon nitride film is provided. A nitrogen-containing plasma is used to nitride silicon on a surface of a target object in a processing chamber of a plasma processing apparatus. The plasma processing method includes a first step of performing a plasma processing under a condition wherein a nitriding reaction is mediated mainly through radical species of the nitrogen-containing plasma, and a second step of performing a plasma processing under a condition wherein the nitriding reaction is mediated mainly through ion species of the nitrogen-containing plasma.

Abstract: An evaporative fuel adsorbent 32, which adsorbs evaporative fuel, is positioned substantially parallel to a sidewall surface 30 of a surge tank 22. A retention member 34 is positioned between the sidewall surface 22 and evaporative fuel adsorbent 32 to prevent oil, which runs down on the sidewall surface 22, from adhering to the evaporative fuel adsorbent 32. The evaporative fuel adsorbent 32 is mounted on the sidewall surface 30 of the surge tank 22 via the retention member 34.